NCV7721D2R2G

NCV7721 Dual Half-Bridge Driver with Parallel Input Control The NCV7721 is a fully protected Dual Half−Bridge Driver designed specifically for automotive and industrial motion control applications. The two half−bridge drivers have independent control. This allows for high side, low side, and H−Bridge control. H−Bridge control provides forward, reverse, brake, and high impedance states (with EN = low). The drivers are controlled via logic level inputs. The device is available in a SOIC−14 package. www.onsemi.com MARKING DIAGRAM 14 Features • 2 High−side and 2 Low−side Drivers Connected as Half−bridges • 500 mA [typ], 1.1 A [max] Drivers • • • • • • • • • • RDS(on) = 0.8 W (typ), 1.7 W (max) Internal Free−wheeling Diodes Parallel Input Logic Control Ultra Low Quiescent Current in Sleep Mode, 1 mA for VS and VCC Compliance with 5 V and 3.3 V Systems Overvoltage and Undervoltage Lockout Fault Reporting for Underload, Overcurrent and Thermal Shutdown 3 A Current Limit Internally Fused Leads in SOIC−14 for Better Thermal Performance ESD Protection up to 6 kV This is a Pb−Free Device SOIC−14 D2 SUFFIX CASE 751A 14 1 1 ♦ Applications • Automotive • Industrial • DC Motor Management NCV7721G AWLYWW NCV7721G = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package PIN CONNECTIONS GND OUT2 VS IN1 TST1 IN2 GND GND OUT1 NC VCC EN FLTB GND ORDERING INFORMATION Device NCV7721D2R2G Package Shipping† SOIC−14 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 February, 2018 − Rev. 3 1 Publication Order Number: NCV7721/D M NCV7721 VS VS VCC Logic Control & Fault Monitoring OUT1 OUT2 FLTB GND GND EN IN1 IN2 GND GND TST1 microprocessor VCC Figure 1. Applications Drawing www.onsemi.com 2 NCV7721 VS Overvoltage Lockout Undervoltage Lockout Charge Pump OUT1 Charge Pump OUT2 VCC Control Logic Fault Detection (underload, overcurrent, thermal shutdown) FLTB VCC ENABLE EN Reference and Bias GND GND IN2 IN1 GND GND Figure 2. Block Diagram Table 1. PIN FUNCTION DESCRIPTION SSIC−14 Fused Package Pin # Symbol 1 GND* Ground. Connect all grounds together. Description 2 OUT2 Half Bridge Output 2. 3 VS Power Supply input for the output driver and internal supply voltage. 4 IN1 Logic level input for OUT1. 5 TST1 6 IN2 7 GND* Ground. Connect all grounds together. 8 GND* Ground. Connect all grounds together. 9 FLTB Fault Bar. Faults are reported (low) for underload, overload, and thermal shutdown. Test pin (ground pin). Logic level input for OUT2. 10 EN Enable. A high enables the device. 11 VCC Power supply input for internal logic. 12 NC No Connection. 13 OUT1 Half Bridge Output 1. 14 GND* Ground. Connect all grounds together. *Pins 1, 7, 8 and 14 are internally shorted together. It is recommended to also short these pins externally. www.onsemi.com 3 NCV7721 Table 2. MAXIMUM RATINGS (Voltages are with respect to device substrate.) Rating Value Power Supply Voltage (VS) DC AC, t < 500 ms, IVs > −2 A −0.3 to 40 −1 Output Pin OUTx DC AC, t < 500 ms, IVs > −2 A −0.3 to 40 −1 Unit V V Pin Voltage (IN1, IN2, EN, VCC) (FLTB) V −0.3 to 5.5 −0.3 to (VCC + 0.3) Output Current (OUTx) DC AC, 50 ms pulse, 1s period A −1.8 to 1.8 −4.0 to 4.0 Electrostatic Discharge, Human Body Model (VS, OUT1, OUT2) (Note 3) 6 kV Electrostatic Discharge, Human Body Model All other pins (Note 3) 2 kV 200 V MSL3 − Operating Junction Temperature, TJ −40 to 150 °C Storage Temperature Range −55 to 150 °C 260 peak °C Electrostatic Discharge, Machine Model All pins Moisture Sensitivity Level Peak Reflow Soldering Temperature: Lead−free 60 to 150 seconds at 217°C (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Thermal Parameters Test Conditions (Typical Value) 14 Pin Fused SOIC Package Unit Min−pad board (Note 1) 1″ pad board (Note 2) Junction−to−Lead (psi−JL8, YJL8) or Pins 1, 7, 8, 14 23 22 °C/W Junction−to−Ambient (RqJA, qJA) 122 83 °C/W mm2 1. 1−oz copper, 67 copper area, 0.062″ thick FR4. 2. 1−oz copper, 645 mm2 copper area, 0.062″, thick FR4. 3. This device series incorporates ESD protection and is characterized by the following methods: ESD HBM according to AEC−Q100−002 (EIA/JESD22−A114) ESD MM according to AEC−Q100−003 (EIA/JESD22−A115) 4. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D, and Application Note AND8003/D. www.onsemi.com 4 NCV7721 Table 3. ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 150°C, 5.5 V < VS < 40 V, 3.15 V < VCC < 5.25 V, EN = VCC, unless otherwise specified.) Conditions Min Typ Max Unit VS = 13.2 V, OUTx = 0 V EN = IN1 = IN2 = 0 V 0 V < VCC < 5.25 V TJ = −40°C to 85°C − 1.0 5.0 mA VS = 13.2 V, OUTx = 0 V EN = IN1 = IN2 = 0 V 0 V < VCC < 5.25 V TJ = 25°C − − 2.0 mA Supply Current (VS) Active Mode EN = VCC, 5.5 V < VS < 35 V No Load − 2.0 4.0 mA Supply Current (VCC) Sleep Mode (Note 6) EN = IN1 = IN2 = 0 V TJ = −40°C to 85°C − 0.1 2.5 mA Supply Current (VCC) Active Mode EN = VCC − 1.5 3.0 mA Characteristic GENERAL Supply Current (VS) Sleep Mode (Note 5) VCC Power−On_Reset Threshold − 2.55 2.90 V VS Undervoltage Detection Threshold Hysteresis VS decreasing 3.7 100 4.1 365 4.5 450 V mV VS Overvoltage Detection Threshold Hysteresis VS increasing 33.0 1.0 36.5 2.5 40.0 4.0 V 155 175 195 °C Thermal Shutdown Threshold (Note 4) OUTPUTS Output Rds(on) (Source) Iout = −500 mA − − 1.7 W Output Rds(on) (Sink) Iout = 500 mA − − 1.7 W Source Leakage Current Sum of OUT1 and OUT2 OUTx = 0 V, VS = 40 V, EN = 0 V IN1 = IN2 = 0 V 0 V < VCC < 5.25 V Sum(I(OUTx) −5.0 − − mA OUTx = 0 V, VS = 40 V, EN = 0 V IN1 = IN2 = 0 V 0 V < VCC < 5.25 V, TJ = 25°C Sum(I(OUTx) −1.0 − − OUTx = VS = 40 V, EN = 0 V IN1 = IN2 = 0 V 0V < VCC < 5.25 V − − 300 OUTx = VS = 13.2 V, EN = 0 V IN1 = IN2 = 0 V 0 V < VCC < 5.25 V, TJ = 25°C − − 10 −17 2.0 −7.0 7.0 −2.0 17 mA − 0.9 1.3 V Sink Leakage Current Under Load Detection Threshold Source Sink Power Transistor Body Diode Forward Voltage If = 500 mA www.onsemi.com 5 mA NCV7721 Table 3. ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 150°C, 5.5 V < VS < 40 V, 3.15 V < VCC < 5.25 V, EN = VCC, unless otherwise specified.) Characteristic Conditions Min Typ Max Unit OVERCURRENT Overcurrent Shutdown Threshold (OUTHx) VCC = 5 V, VS = 13.2 V −2.0 −1.45 −1.1 A Overcurrent Shutdown Threshold (OUTLx) VCC = 5 V, VS = 13.2 V 1.1 1.45 2.0 A Current Limit (OUTHx) VCC = 5 V, VS = 13.2 V −5.0 −3.0 −2.0 A Current Limit (OUTLx) VCC = 5 V, VS = 13.2 V 2.0 3.0 5.0 A 2.0 − − − − 0.8 V Input Hysteresis 100 400 800 mV Pulldown Resistance 50 125 250 kW Input Capacitance − 10 15 pF CURRENT LIMIT LOGIC INPUTS (EN, IN1, IN2) Input Threshold High Low LOGIC OUTPUT (FLTB) Output Low IFLTB = 1.25 mA IFLTB = 10 mA − − 0.08 0.6 0.25 1.1 V Output Leakage EN = 5 V, 0 V < FLTB < VCC − − 1 mA TIMING SPECIFICATIONS 200 350 600 ms Overcurrent Shutdown Delay Time VS = 13.2 V, Rload = 25 W 10 25 50 ms High Side Turn−on Time VS = 13.2 V, Rload = 25 W − 7.5 15 ms High Side Turn−off Time VS = 13.2 V, Rload = 25 W − 3.0 6.0 ms Low Side Turn−on Time VS = 13.2 V, Rload = 25 W − 6.5 15 ms Low Side Turn−off Time VS = 13.2 V, Rload = 25 W − 3.0 6.0 ms High Side Rise Time VS = 13.2 V, Rload = 25 W − 5.0 10 ms High Side Fall Time VS = 13.2 V, Rload = 25 W − 2.0 5.0 ms Low Side Rise Time VS = 13.2 V, Rload = 25 W − 1.0 3.0 ms Low Side Fall Time VS = 13.2 V, Rload = 25 W − 1.0 3.0 ms NonOverlap Time High Side Turn−off to Low Side Turn−on 1.0 − − ms NonOverlap Time Low Side Turn−off to High Side Turn on 1.0 − − ms Enable Turn−on Time (high−side driver) INx = high, Rload = 25 W to GND EN going high through 50% to OUTx going high through 50% − 50 − ms Enable Turn−on Time (low−side driver) INx = low, Rload = 25 W to VS EN going high through 50% to OUTx going low through 50% − 50 − ms Enable Turn−off Time (high−side driver) INx = high, Rload = 25 W to GND EN going low through 50% to OUTx going low through 50% − 2.5 − ms Enable Turn−off Time (low−side driver) INx = low, Rload = 25 W to VS EN going low through 50% to OUTx going high through 50% − 2.5 − ms Under Load Detection Time Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 6 NCV7721 TYPICAL CHARACTERISTICS 4.0 6 VS = 13.2 V VCC SLEEP CURRENT (mA) VS SLEEP CURRENT (mA) 7 5 4 3 2 1 3.5 VS = 5.25 V 3.0 2.5 2.0 1.5 1.0 0.5 0 −40 −20 VCC = 0 V to 5.25 V 0 20 40 60 80 0 −50 −30 −10 100 120 140 160 10 30 50 70 90 110 130 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. VS Sleep Supply Current vs. Temperature Figure 4. VCC Sleep Supply Current vs. Temperature www.onsemi.com 7 NCV7721 TYPICAL CHARACTERISTICS 140 120 1 oz Cu qJA (°C/W) 100 80 2 oz Cu 60 40 20 0 0 100 200 300 400 500 600 COPPER HEAT SPREADING AREA 700 800 (mm2) Figure 5. qJA vs. Copper Spreader Area, 14 Lead SON (fused leads) 1000 Cu Area = 100 mm2 1.0 oz R(t) (°C/W) 100 200 mm2 1.0 oz 10 300 mm2 1.0 oz 400 mm2 1.0 oz 500 mm2 1.0 oz 1 0.1 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 TIME (sec) Figure 6. Transient Thermal Response to a Single Pulse 1 oz Copper (Log−Log) 140 Cu Area = 100 mm2 1.0 oz R(t) (°C/W) 120 200 mm2 1.0 oz 100 300 mm2 1.0 oz 80 400 mm2 1.0 oz 500 mm2 1.0 oz 60 40 20 0 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 TIME (sec) Figure 7. Transient Thermal Response to a Single Pulse 1 oz Copper (Semi−Log) www.onsemi.com 8 10 100 1000 NCV7721 DETAILED OPERATING DESCRIPTION General driving an inductive load causes the voltage on the output to rise up. Once the voltage rises higher than VS by a diode voltage (body diode of the high−side driver), the energy in the inductor will dissipate through the diode to VS. If a reverse battery diode is used in the system, care must be taken to insure the power supply capacitor is sufficient to dampen any increase in voltage to VS caused by the current flow through the body diode so that it is below 40 V. Negative transients will momentarily occur when a high−side driver driving an inductive load is turned off. This will be clamped by an internal diode from the output pin (OUT1 or OUT2) to the IC ground. The NCV7721 Dual Half Bridge Driver provides drive capability for 2 Half−Bridge configurations. Each output drive is characterized for a 500 mA load with capability up to 1.1 A (min overvoltage shutdown threshold). Strict adherence to the integrated circuit die temperature is necessary, with a maximum die temperature of 150°C. Output drive control is handled via the parallel input control pins (IN1 & IN2). A single open Drain output reports underload, overload, and thermal shutdown faults. An Enable function (EN) provides a low quiescent sleep current mode when the device is not being utilized. A resistor pulldown is provided on EN, IN1, and IN2 to insure a predictive state (low) in the event of a detached input signal. Current Limit OUTx current is limited per the Current Limit electrical parameter for each driver. The magnitude of the current has a minimum specification of 2 A at VCC = 5 V and VS = 13.2 V. The output is protected for high power conditions during Current Limit by thermal shutdown and the Overcurent Detection shutdown function. Overcurrent Detection shutdown protects the device during current limit because the Overcurrent threshold is below the Current Limit threshold. The Over current Detection Shutdown Control Timer is initiated at the Overcurrent Shutdown Threshold which starts before the Current Limit is reached. Note: High currents will cause a rise in die temperature. Devices will not be allowed to turn on if the die temperature exceeds the thermal shutdown temperature. Power Up/Down Control (Undervoltage Detection) A feature incorporated in the NCV7721 is an undervoltage lockout circuit that prevents the output drivers from turning on unintentionally. VCC and VS are monitored for undervoltage conditions supporting a smooth turn−on transition. All drivers are initialized in the off (high impedance) condition, and will remain off during a VCC or VS undervoltage condition. This allows power up sequencing of VCC and VS up to the user. Hysteresis in the UVLO circuits results in glitch free operation during power up/down. Overvoltage Shutdown Overvoltage lockout monitors the voltage on the VS pin. When the overvoltage voltage threshold is breached (36.5 V [typ]), all outputs will turn off and remain off until VS is out of overvoltage. A typical voltage hysteresis of 2.5 V eliminates the possibility of oscillation at the shutdown threshold. Overcurrent Shutdown Effected outputs will turn off when the Overcurrent Shutdown Threshold has been breached for the Overcurrent Shutdown Delay Time. FLTB will report a low and the driver will latch off. The driver can only be turned back on by a toggle of the EN pin or a power on reset of VCC. H−Bridge Driver Configuration Overcurrent Detection Shut Down Timer The NCV7721has the flexibility of controlling each half bridge driver independently through the IN1 and IN2 logic input pins. This allows for high−side, low side and H−Bridge control. H−bridge control provides forward, reverse, brake and high impendence states. There are two protection mechanisms for output current, overcurrent and current limit. 1. Current Limit – Maximum current for OUT1 and OUT2. 2. Overcurrent Detection – Threshold at which timer starts. Figure 8 shows the typical performance of a part which has exceeded the 1.45 A (typ) Overcurrent Detection threshold and started the shutdown timer. Overvoltage Clamping – Driving Inductive Loads Each output is internally clamped to ground and VS by internal freewheeling diodes. The diodes have ratings that complement the FETs they protect. A flyback event from 3A 1.45 A 25 usec Figure 8. Output Current Shutdown Control www.onsemi.com 9 NCV7721 Underload Detection under load occurs in another channel after the global timer has been started, the delay for any subsequent underload will be the remainder of the initially started timer. The timer runs continuously with any persistent under load condition and will impact the time for multi underload situations. Figures 9 and 10 highlight the timing conditions for an underload state where the global timer is reset (discontinuous time) and the conditions where the global timer is not reset (continuous time). The underload detection circuit monitors the current from each output driver. A minimum load current (this is the maximum open circuit detection threshold) is required when the drivers are turned on. If the underload detection threshold has been detected continuously for more than the underload delay time, FLTB will report a low. There is no change to the driver condition (remains in the active state). The fault can be cleared by a toggle of the EN pin or a power on reset of VCC. The NCV7721 uses a global underload timer. An under load condition starts the global under load delay timer. If load[mA] OUTx OUTy 7[mA](typ) Underload Detection Threshold FLTB Time 350[us](typ) Global Timer resets here If the 1st underload condition is