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NCV7726DQAR2G

NCV7726DQAR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SSOP24_EP

  • 描述:

    SSOP24_150MIL_EP 3.15~5.25V

  • 数据手册
  • 价格&库存
NCV7726DQAR2G 数据手册
NCV7726A Half-Bridge Driver The NCV7726A is a twelve channel half*bridge driver with protection features designed specifically for automotive and industrial motion control applications. The product has independent controls and diagnostics, and the drivers can be operated in forward, reverse, brake, and high impedance states. The device is controlled via a 16 bit SPI interface and is daisy chain compatible. www.onsemi.com Features • Low Quiescent Current Sleep Mode • High−Side and Low−Side Drivers MARKING DIAGRAM • • • • • • • • • • • • • • NCV7726A AWLYWWG • Connected in Half−Bridge Configurations Integrated Freewheeling Protection (LS and HS) 500 mA Typical, 1.1 A Peak Current RDS(on) = 0.85 W (typ) 5 MHz SPI Communication 16 Bit Frame Error Detection Daisy Chain Compatible with Multiple of 8 bit Devices Compliance with 3.3 V and 5 V Systems Undervoltage and Overvoltage Lockout Discriminated Fault Reporting Overcurrent Protection Overtemperature Protection Low−Side Underload Detection Exposed Pad Package NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SSOP24 NB EP CASE 940AK NCV7726A = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NCV7726DQAR2G SSOP24 EP (Pb−Free) 2500/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Typical Applications • Automotive • Industrial • DC Motor Management for HVAC Application © Semiconductor Components Industries, LLC, 2018 February, 2019 − Rev. 0 1 Publication Order Number: NCV7726A/D NCV7726A NCV7726A 1 μF MRA4003T3 OUT1 Low−side Driver VS1 13.2 V High−side Driver VS2 HS OUT2 LS Voltage Regulator VCC Power On Reset 10 nF HS OUT3 LS Watchdog EN Control Logic HS OUT4 LS HS Protection: Under Load Over Temperature Under−voltage Over−voltage Over Current OUT5 LS HS OUT6 LS HS SO 16 − Bit Serial Data Interface SI uC SCLK CSB OUT7 LS HS OUT8 LS HS OUT9 LS HS OUT10 LS HS OUT11 LS High−side Driver Low−side Driver GND Figure 1. Typical Application www.onsemi.com 2 OUT12 NCV7726A VS1 VS EN ENABLE POR BIAS Wave Shaping Control Logic Fault Reporting VS High Side Driver Charge Pump VS1 VCC DRIVE 1 OUT1 Wave Shaping VS Low Side Driver SO SI LS Under Load Fault SPI and 16 Bit Logic Control SCLK Overcurrent Thermal Warning & Shutdown CSB VS1 VS2 VS1, VS2 Overvoltage Lockout VS2 VS1 Undervoltage Lockout VS2 VS1 VS1 VS2 VS2 VS2 VS2 GND GND GND GND VS2 Figure 2. Block Diagram www.onsemi.com 3 DRIVE 2 OUT2 DRIVE 3 OUT3 DRIVE 4 OUT4 DRIVE 5 OUT5 DRIVE 6 OUT6 DRIVE 7 OUT7 DRIVE 8 OUT8 DRIVE 9 OUT9 DRIVE 10 OUT10 DRIVE 11 OUT11 DRIVE 12 OUT12 NCV7726A GND 1 24 GND OUT1 2 23 OUT2 OUT5 3 22 OUT8 OUT7 4 21 VS1 SI 5 20 SCLK VCC 6 19 CSB EPAD SO 7 18 OUT12 EN 8 17 OUT11 OUT9 9 16 VS2 OUT6 10 15 OUT10 OUT4 11 14 OUT3 GND 12 13 GND Figure 3. Pinout – SSOP24 NB EP PIN FUNCTION DESCRIPTION The pin−out for the Half−Bridge Driver in SSOP24 NB EP package is shown in the table below. Pin# SSOP24 Symbol 1 GND Ground. Must be connected to other GNDs externally. 2 OUT1 Half−bridge output 1 3 OUT5 Half−bridge output 5 4 OUT7 Half−bridge output 7 5 SI 6 VCC 7 SO 16 bit serial communication output. 3.3V/5V Compliant 8 EN Enable − active high; wakes the device from sleep mode. 3.3V/5V (TTL) Compatible − internally pulled down. 9 OUT9 Half−bridge output 9 10 OUT6 Half−bridge output 6 Description 16 bit serial communication input. 3.3V/5V (TTL) Compatible − internally pulled down. Power supply input for Logic. 11 OUT4 Half−bridge output 4 12 GND Ground. Must be connected to other GNDs externally. 13 GND Ground. Must be connected to other GNDs externally. 14 OUT3 Half−bridge output 3 15 OUT10 Half−bridge output 10 16 VS2 Power Supply input for outputs 3, 4, 6, 9, 10, 11 and 12. This pin must be connected to VS1 externally. 17 OUT11 Half−bridge output 11 18 OUT12 Half−bridge output 12 19 CSB Chip select bar − active low; enables serial communication operation. 3.3V/5V (TTL) Compatible − internally pulled up. 20 SCLK Serial communication clock input. 3.3V/5V (TTL) Compatible − internally pulled down. 21 VS1 22 OUT8 Half−bridge output 8 23 OUT2 Half−bridge output 2 24 GND Ground. Must be connected to other GNDs externally. EPAD Exposed Pad Power Supply input for outputs 1, 2, 5, 7, 8. This pin must be connected to VS2 externally. Connect to GND or leave unconnected. www.onsemi.com 4 NCV7726A MAXIMUM RATINGS (Voltages are with respect to GND) Rating Symbol Value VSxdcMax VSxac −0.3 to 40 −1.0 (Vcc, SI, SCLK, CSB, SO, EN) VioMax −0.3 to 5.5 (DC) (AC) (AC), t< 500 ms, IOUTx > −1.1 A (AC), t< 500 ms, IOUTx < 1 A VoutxDc VoutxAc −0.3 to 40 −0.3 to 40 −1.0 1.0 IoutxImax −2.0 to 2.0 A Junction Temperature Range TJ −40 to 150 °C Storage Temperature Range Tstr −55 to 150 °C (Note 1) 260 °C VSx Pin Voltage (VS1, VS2) (DC) (AC), t < 500 ms, Ivsx > −2 A I/O Pin Voltage OUTx Pin Voltage OUTx Pin Current (OUT1, ..., OUT12) Peak Reflow Soldering Temperature: Pb−free 60 to 150 seconds at 217°C Unit V V V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. See or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ATTRIBUTES Characteristic Short Circuit Reliability Characterization ESD Capability Human Body Model per AEC−Q100−002 VSx, OUTx All Other Pins Charged Device Model per AEC−Q100−011 Moisture Sensitivity Level Package Thermal Resistance – Still−air Junction–to–Ambient Junction–to–Board (Note 2) (Note 2) Symbol Value Unit AECQ10x Grade A − Vesd4k Vesd2k Vesd750 ≥ ±4.0 kV ≥ ±2.0 kV ≥ ±750 V MSL MSL2 − RqJA RYJBOARD 29.4 10.5 °C/W °C/W 2. Based on JESD51−7, 1.6 mm thick FR4, 2S2P PCB with 600 mm2 2 oz. copper and 18 thermal vias to 80x80 mm 1 oz. internal spreader planes. Simulated with each channel dissipating 0.2 W. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Digital Supply Input Voltage VCCOp 3.15 5.25 V Battery Supply Input Voltage (VS1 = VS2) VSxOp 5.5 32 V DC Output Current IxOp − 0.5 A Junction Temperature TjOp −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 5 NCV7726A ELECTRICAL CHARACTERISTICS (−40°C ≤ TJ ≤ 150°C, 5.5 V ≤ VSx ≤ 40 V, 3.15 V ≤ VCC ≤ 5.25 V, EN = VCC, unless otherwise specified.) Characteristic Symbol Conditions Min Typ Max Unit − 1.0 2.5 mA − 2.5 5.0 mA − 1.0 2.5 mA − 1.5 3.0 mA Sleep Mode, −40°C to 85°C VS1 = VS2 = 13.2 V, No Load − 2.0 5.0 mA POWER SUPPLIES Supply Current (VS1 + VS2) Sleep Mode IqVSx85 Supply Current (VS1 + VS2) Active Mode IvsOp Supply Current (Vcc) Sleep Mode Active Mode Total Sleep Mode Current I(VS1) + I(VS2) + I(VCC) IqVCC IVCCOp IqTot VS1 = VS2 = 13.2V, VCC = 0 V −40°C to 85°C EN = VCC, 5.5V < VSx < 28 V No Load, All Outputs Off CSB = VCC, EN = SI = SCLK = 0 V −40°C to 85°C EN = CSB = VCC, SI = SCLK = 0 V All Outputs Off VCC Power−on Reset Threshold VCCpor VCC increasing − 2.70 2.90 V VSx Undervoltage Detection Threshold VSxuv VSx decreasing 3.5 4.1 4.5 V 100 − 450 mV 32 36 40 V 1 2.5 4 V VSx Undervoltage Detection Hysteresis VSxuHys VSx Overvoltage Detection Threshold VsXov VSx Overvoltage Detection Hysteresis VSxoHys VSx increasing DRIVER OUTPUT CHARACTERISTICS Output High RDS(on) (source) RDSonHS Iout = −500 mA, Vs = 13.2 V VCC = 3.15 V − 0.85 1.9 W Output Low RDS(on) (sink) RDSonLS Iout = 500 mA, Vs = 13.2 V VCC = 3.15 V − 0.85 1.9 W −1.0 −2.0 − − − − mA mA − − − − 1.0 2.0 mA mA Source Leakage Current Sink Leakage Current IsrcLkg13.2 IsrcLkg28 VCC = 5 V, OUT(1−12) = 0 V, EN = 0/5 V VSx = 13.2 V VSx = 28 V IsnkLkg13.2 IsnkLkg28 VCC = 5 V, EN = 0/5 V OUT(1−12) = VSx = 13.2 V OUT(1−12) = VSx = 28 V Overcurrent Shutdown Threshold (Source) IsdSrc VCC = 5 V, VSx = 13.2 V −2.0 −1.5 −1.1 A Overcurrent Shutdown Threshold (Sink) IsdSnk VCC = 5 V, VSx = 13.2 V 1.1 1.5 2.0 A 10 25 50 ms Over Current Delay Timer TdOc Underload Detection Threshold (Low Side) IuldLS VCC = 5 V, VSx = 13.2 V − 2.5 5.5 mA Underload Detection Delay Time TdUld VCC = 5 V, VSx = 13.2 V 200 350 600 ms If = 500 mA − 0.9 1.3 V Body Diode Forward Voltage IbdFwd DRIVER OUTPUT SWITCHING CHARACTERISTICS High Side Turn On Time ThsOn Vs = 13.2 V, Rload = 70 W − 7.5 13 ms High Side Turn Off Time ThsOff Vs = 13.2 V, Rload = 70 W − 3.0 6.0 ms Low Side Turn On Time TlsOn Vs = 13.2 V, Rload = 70 W − 6.5 13 ms Low Side Turn Off Time TlsOff Vs = 13.2 V, Rload = 70 W − 2.0 5.0 ms High Side Rise Time ThsTr Vs = 13.2 V, Rload = 70 W − 4.0 8.0 ms High Side Fall Time ThsTf Vs = 13.2 V, Rload = 70 W − 2.0 4.0 ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Not production tested. 4. This is the minimum time the user must wait between SPI commands. 5. This is the minimum time the user must wait between consecutive SRR requests. www.onsemi.com 6 NCV7726A ELECTRICAL CHARACTERISTICS (continued) (−40°C ≤ TJ ≤ 150°C, 5.5 V ≤ VSx ≤ 40 V, 3.15 V ≤ VCC ≤ 5.25 V, EN = VCC, unless otherwise specified.) Characteristic Symbol Conditions Min Typ Max Unit DRIVER OUTPUT SWITCHING CHARACTERISTICS Low Side Rise Time TlsTr Vs = 13.2 V, Rload = 70 W − 1.0 3.0 ms Low Side Fall Time TlsTf Vs = 13.2 V, Rload = 70 W − 1.0 3.0 ms High Side Off to Low Side On Non−Overlap Time ThsOffLsOn Vs = 13.2 V, Rload = 70 W 1.5 − − ms Low Side Off to High Side On Non−Overlap Time TlsOffHsOn Vs = 13.2 V, Rload = 70 W 1.5 − − ms Twr (Note 3) 120 140 170 °C TwHy (Note 3) − 20 − °C Tsd (Note 3) 150 175 200 °C TsdHy (Note 3) − 20 − °C VthInH VthInL 2.0 − − − − 0.6 V V Input Hysteresis − SI, SCLK, CSB VthInHys − 150 − mV Input Hysteresis − EN VthENHys 150 400 800 mV EN = SI = SCLK = VCC 50 125 200 kW CSB = 0 V 50 125 250 kW Cinx (Note 3) − − 15 pF Output High VsoH ISOURCE = −1 mA VCC – 0.6 − − V Output Low VsoL ISINK = 1.6 mA − − 0.4 V THERMAL RESPONSE Thermal Warning Thermal Warning Hysteresis Thermal Shutdown Thermal Shutdown Hysteresis LOGIC INPUTS − EN, SI, SCLK, CSB Input Threshold High Low Pull−down Resistance − EN, SI, SCLK Pull−up Resistance − CSB Input Capacitance Rpdx RpuCSB LOGIC OUTPUT − SO Tri−state Leakage ItriStLkg CSB = 5 V −5 − 5 mA Tri−state Output Capacitance ItriStCout CSB = VCC, 0 V < VCC < 5.25 V (Note 3) − − 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Not production tested. 4. This is the minimum time the user must wait between SPI commands. 5. This is the minimum time the user must wait between consecutive SRR requests. www.onsemi.com 7 NCV7726A ELECTRICAL CHARACTERISTICS (continued) (−40°C ≤ TJ ≤ 150°C, 5.5 V ≤ VSx ≤ 40 V, 3.15 V ≤ VCC ≤ 5.25 V, EN = VCC, unless otherwise specified.) Characteristic Symbol Conditions Timing Charts # Min Typ Max Unit − − − 5.0 MHz − 200 500 − − − − ns SERIAL PERIPHERAL INTERFACE SCLK Frequency Fclk SCLK Clock Period TpClk SCLK High Time TclkH 1 85 − − ns SCLK Low Time TclkL 2 85 − − ns SCLK Setup Time TclkSup 3, 4 85 − − ns SI Setup Time TsiSup 11 50 − − ns SI Hold Time TsiH 12 50 − − ns TcsbSup 5, 6 100 − − ns CSB Setup Time VCC = 5 V VCC = 3.3 V CSB High Time TcsbH 7 5.0 − − ms SO enable after CSB falling edge TenSo 8 − − 200 ns SO disable after CSB rising edge TdisSo 9 − − 200 ns SO Rise/Fall Time TsoR/F Cload = 40 pF (Note 3) − − 10 25 ns SO Valid Time TsoV Cload = 40 pF (Note 3) SCLK ↑ to SO 50% 10 − 50 100 ns EN Low Valid Time TenL VCC = 5 V; EN H→L 50% to OUTx turning off 50% − 10 − − ms − − − 100 ms − 150 − − ms EN High to SPI Valid SRR Delay Between Consecutive Frames (Note 4) TenHspiV Tsrr (Note 5) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Not production tested. 4. This is the minimum time the user must wait between SPI commands. 5. This is the minimum time the user must wait between consecutive SRR requests. www.onsemi.com 8 NCV7726A CHARACTERISTIC TIMING DIAGRAMS TlsTr 90% TlsOff LS Turn OFF 10% TlsOffHsOn 90% HS Turn ON 10% ThsTr 90% ThsOn CSB LS Turn On TlsTf 90% TlsOn 10% HS Turn Off ThsOffLsOn 90% 10% ThsTf 90% ThsOff CSB Figure 4. Detailed Driver Timing www.onsemi.com 9 NCV7726A 4 7 CSB 5 SCLK 3 1 2 6 CSB SO 9 8 SI 12 SCLK 10 11 SO Figure 5. Detailed SPI Timing www.onsemi.com 10 NCV7726A TYPICAL CHARACTERISTICS 4.0 ACTIVE MODE VCC CURRENT (mA) SLEEP MODE CURRENT (mA) 4.5 VSx = 13.2 V 3.5 3.0 VCC = 5.25 V 2.5 2.0 VCC = 5.00 V 1.5 1.0 VCC = 3.15 V 0.5 0 −50 0 50 100 150 BODY DIODE FORWARD VOLTAGE (V) VSx = 13.2 V RDS(on) (W) 1.0 LSx 0.8 HSx 0 50 125°C 25°C 2.10 −40°C 2.05 2.00 3.0 3.5 4.0 4.5 5.0 5.5 100 150 1.05 1.00 0.95 0.90 LSx 0.85 0.80 HSx If = 0.5 A 0.75 −50 0 50 100 150 TEMPERATURE (5C) TEMPERATURE (5C) Figure 8. RDS(on) vs. Temperature Figure 9. Body Diode Voltage vs. Temperature 2.0 0.02 LSx 1.5 0 −0.02 1.0 LEAKAGE (mA) IsdSrc, IsdSnk, OVERCURRENT (A) 2.15 Figure 7. I(VCC) Active Mode vs. V(VCC) 1.2 −0.04 0.5 VSx = 13.2 V VCC = 5.0 V −0.06 LSx −0.08 −0.5 −1.0 −0.10 HSx −1.5 −2.0 −50 150°C Figure 6. IqTot vs. Temperature 1.4 0 2.20 VCC, VOLTAGE (V) 1.6 0.6 −50 VSx = 13.2 V 2.25 TEMPERATURE (5C) 2.0 1.8 2.30 0 50 −0.12 100 150 −0.14 −50 HSx 0 50 100 150 TEMPERATURE (5C) TEMPERATURE (5C) Figure 10. Over Current vs. Temperature Figure 11. Leakage vs. Temperature www.onsemi.com 11 200 NCV7726A DETAILED OPERATING DESCRIPTION General Overview SPI Communication The NCV7726A is comprised of twenty four NMOS power drivers. The drivers are arranged as twelve half−bridge output channels, allowing for six independent full−bridge configured loads. Output control and status reporting is handled via the SPI (Serial Peripheral Interface) communications port. Each output is characterized for a typical 0.5 A DC load and has a maximum 2.0 A surge capability (at VSx = 13.2 V). Maximum allowable junction temperature is 150°C and may constrain the maximum load current and/or limit the number of drivers active at once. An active−high enable function (EN) allows global control of the outputs and provides a low quiescent current sleep mode when the device is not being utilized. An internal pull−down resistor is provided on the input to ensure the device enters sleep mode if the input signal is lost. After EN transitions from low to high, the VCC POR cycle will proceed and bring the device into normal operation. The device configuration registers can then be programmed via SPI. Bringing EN low clears all registers (no configuration or status data is stored), disables the drivers, and enters sleep mode. 16−bit full duplex SPI communication has been implemented for device configuration, driver control, and reading the status data. In addition to the 16−bit status data, a pseudo−bit (PRE_15) can also be retrieved from the SO output. The device must be enabled (EN = H) for SPI communication. The SPI inputs are TTL compatible and the SO output high level is defined by the applied VCC. The active−low CSB input has a pull−up resistor and the remaining inputs have pull−down resistors to bias them to known states when SPI communication is inactive. The latched thermal shutdown (TSD) status bit PRE_15 is available on SO until the first rising SCLK edge after CSB goes low. The following conditions must be met for a valid TSD read to be captured: 1. SCLK and SI are low before the CSB cycle; 2. CSB transitions from high to low; 3. CSB setup time (TcsbSup: Figure 5, #5) is satisfied. Figure 12 shows the SPI communication frame format, and Tables 1 and 2 define the command input and diagnostic status output bits. CSB SI SRR SCLK SO 15 TSD PRE_15 PSEUDO−BIT OCS HBSEL 14 PSF ULDSC B[12:7] → HBEN[6:1] B[12:7] " HBEN[12:7] B[6:1] → HBCNF[6:1] B[6:1] " HBCNF[12:7] 13 OVLO 0 ULD B[12:7] → HBST[6:1] B[12:7] " HBST[12:7] B[6:1] → HBCR[6:1] B[6:1] " HBCR[12:7] TW Figure 12. SPI Communication Frame Format 5. Current SO data is simultaneously shifted out on every rising edge of SCLK, starting with the MSB (OCS). 6. CSB goes high to end the frame and SO becomes tri−state. 7. The last 16 bits clocked into SI are transferred to the device’s data register if no frame error is detected, otherwise the entire frame is ignored and the previous input data is preserved. Communication is implemented as follows and is also illustrated in Figures 12 and 14: 1. SI and SCLK are set to low before the CSB cycle. 2. CSB goes low to begin a serial data frame; pseudo−bit PRE_15 is immediately available at SO. 3. SI data is shifted in on every rising edge of SCLK, starting with the most significant bit (MSB), SRR. 4. SI data is recognized on every falling edge of the SCLK. www.onsemi.com 12 NCV7726A Table 1. SPI COMMAND INPUT DEFINITIONS Channels 12 – 7 (Input Bit # 14 = 1) Bit# Name Function Status* Scope 15 SRR Status Register Reset** 1 = Reset Status Reset per HBSEL 14 HBSEL Channel Group Select 1 = HB [12:7] 1 = HB [12:7] | 0 = HB [6:1] 13 ULDSC Underload Shutdown Control 1 = Enabled Enabled per HBSEL; Per Half−Bridge Operation 12 HBEN12 Enable Half−Bridge 12 11 HBEN11 Enable Half−Bridge 11 10 HBEN10 Enable Half−Bridge 10 0 = Hi−Z 9 HBEN9 Enable Half−Bridge 9 1 = Enabled 8 HBEN8 Enable Half−Bridge 8 7 HBEN7 Enable Half−Bridge 7 6 HBCNF12 Configure Half−Bridge 12 5 HBCNF11 Configure Half−Bridge 11 4 HBCNF10 Configure Half−Bridge 10 0 = LS On, HS Off 3 HBCNF9 Configure Half−Bridge 9 1 = LS Off, HS On 2 HBCNF8 Configure Half−Bridge 8 1 HBCNF7 Configure Half−Bridge 7 0 OVLO VSx Overvoltage Lockout 1 = Enabled Per Half−Bridge Per Half−Bridge Global Lockout Channels 6 – 1 (Input Bit # 14 = 0) Bit# Name Function Status* Scope 15 SRR Status Register Reset** 1 = Reset Status Reset per HBSEL 14 HBSEL Channel Group Select 0 = HB [6:1] 1 = HB [12:7] | 0 = HB [6:1] 13 ULDSC Underload Shutdown Control 1 = Enabled Enabled per HBSEL; Per Half−Bridge Operation 12 HBEN6 Enable Half−Bridge 6 11 HBEN5 Enable Half−Bridge 5 10 HBEN4 Enable Half−Bridge 4 0 = Hi−Z 9 HBEN3 Enable Half−Bridge 3 1 = Enabled 8 HBEN2 Enable Half−Bridge 2 7 HBEN1 Enable Half−Bridge 1 6 HBCNF6 Configure Half−Bridge 6 5 HBCNF5 Configure Half−Bridge 5 4 HBCNF4 Configure Half−Bridge 4 0 = LS On, HS Off 3 HBCNF3 Configure Half−Bridge 3 1 = LS Off, HS On 2 HBCNF2 Configure Half−Bridge 2 1 HBCNF1 Configure Half−Bridge 1 0 OVLO VSx Overvoltage Lockout 1 = Enabled *All command input bits are set to 0 at VCC power−on reset. **Latched faults are cleared and outputs can be re−programmed if no fault exists after SRR asserted. www.onsemi.com 13 Per Half−Bridge Per Half−Bridge Global Lockout NCV7726A Table 2. SPI STATUS OUTPUT DEFINITIONS Channels 12 – 7 (If Previous Input Bit # 14 = 1) Bit# Name Function Status* Scope PRE_15 TSD Latched Thermal Shutdown 1 = Fault Global Notification; Per Half−Bridge Operation 15 OCS Latched Overcurrent Shutdown 1 = Fault Notification per HBSEL; Per Half−Bridge Operation 14 PSF VS1 and/or VS2 Undervoltage or Overvoltage 1 = Fault Global Notification and Global Operation 13 ULD Underload Detect 1 = Fault Notification per HBSEL; Per Half−Bridge Operation 12 HBST12 Half−Bridge 12 Output Status 11 HBST11 Half−Bridge 11 Output Status 10 HBST10 Half−Bridge 10 Output Status 0 = Hi−Z 9 HBST9 Half−Bridge 9 Output Status 1 = Enabled 8 HBST8 Half−Bridge 8 Output Status 7 HBST7 Half−Bridge 7 Output Status 6 HBCR12 Half−Bridge 12 Config Status 5 HBCR11 Half−Bridge 11 Config Status 4 HBCR10 Half−Bridge 10 Config Status 0 = LS On, HS Off 3 HBCR9 Half−Bridge 9 Config Status 1 = LS Off, HS On** 2 HBCR8 Half−Bridge 8 Config Status 1 HBCR7 Half−Bridge 7 Config Status 0 TW Thermal Warning 1 = Fault *All status output bits are set to 0 at Vcc power−on reset (POR). **HBCRx is forced to 0 when HBSTx = 0 via POR, SPI, or fault. www.onsemi.com 14 Per Half−Bridge Per Half−Bridge Global Notification; Per Half−Bridge Operation NCV7726A Table 2. SPI STATUS OUTPUT DEFINITIONS (continued) Channels 6 – 1 (If Previous Input Bit # 14 = 0) Bit# Name Function Status* Scope PRE_15 TSD Latched Thermal Shutdown 1 = Fault Global Notification; Per Half−Bridge Operation 15 OCS Latched Overcurrent Shutdown 1 = Fault Notification per HBSEL; Per Half−Bridge Operation 14 PSF VS1 and/or VS2 Undervoltage or Overvoltage 1 = Fault Global Notification and Global Operation 13 ULD Underload Detect 1 = Fault Notification per HBSEL; Per Half−Bridge Operation 12 HBST6 Half−Bridge 6 Output Status 11 HBST5 Half−Bridge 5 Output Status 10 HBST4 Half−Bridge 4 Output Status 0 = Hi−Z 9 HBST3 Half−Bridge 3 Output Status 1 = Enabled 8 HBST2 Half−Bridge 2 Output Status 7 HBST1 Half−Bridge 1 Output Status 6 HBCR6 Half−Bridge 6 Config Status 5 HBCR5 Half−Bridge 5 Config Status 4 HBCR4 Half−Bridge 4 Config Status 0 = LS On, HS Off 3 HBCR3 Half−Bridge 3 Config Status 1 = LS Off, HS On** 2 HBCR2 Half−Bridge 2 Config Status 1 HBCR1 Half−Bridge 1 Config Status 0 TW Thermal Warning Per Half−Bridge 1 = Fault Global Notification; Per Half−Bridge Operation *All status output bits are set to 0 at Vcc power−on reset (POR). **HBCRx is forced to 0 when HBSTx = 0 via POR, SPI, or fault. Frame Error Detection device’s SI. The SO of the final device in the chain is connected to the master’s MISO. The hardware configuration for the NCV7726A daisy chained with an 8− bit SPI device is shown in Figure 13. A 24−bit frame made of 16−bit word ‘A’ and 8−bit word ‘B’ is sent from the master. Command word B is sent first followed by word A. The master simultaneously receives status word B first followed by word A. The progression of data from the MCU through the sequential devices is illustrated in Figure 14. Compliance with the illustrated frame format is required for proper daisy chain operation. Situations should be avoided where an incorrect multiple of 8 bits is sent to the devices, but the frame length does not cause a frame error in the devices. For example, the word order could be inadvertently interleaved or reversed. Invalid data is accepted by the NCV7726A in such scenarios and possibly by other devices in the chain, depending on their frame error implementation. Data is received as a command by the device at the beginning of the chain, but the device at the end of the chain may receive status data from the preceding device as a command. The NCV7726A employs frame error detection to help ensure input data integrity. SCLK is compared to an n x 8 bit counter and a valid frame (CSB H−L−H cycle) has integer multiples of 8 SCLK cycles. For the first 16 bits shifted into SI, SCLK is compared to a modulo16 counter (n = 2), and SCLK is compared to a modulo 8 counter (n = 1, 2, ...m) thereafter. This variable modulus facilitates daisy chain operation with devices using different word lengths. The last 16 bits clocked into SI are transferred to the NCV7726A’s data register if no frame error is detected, otherwise the entire frame is ignored and the previous input data is preserved. Daisy Chain Operation Daisy chain operation is possible with multiple 16−bit and 8−bit devices that have a compatible SPI protocol. The clock phase and clock polarity with respect to the data for all the devices in the chain must be the same as the NCV7726A. CSB and SCLK are parallel connected to every device in the chain while SO and SI are series connected between each device. The master’s MOSI is connected to the SI of the first device and the first device’s SO is connected to the next www.onsemi.com 15 NCV7726A CMD [x, n] = Command Word to Device ‘x’, Length ‘n’ STA [x, n] = Status Word from Device ‘x’, Length ‘n’ MCU MISO 8−bit Device NCV7726A 16−bit Device CSB CSB CSB SCLK SCLK SCLK MOSI Master SO SI CMD [B, 8] + CMD [A, 16] SO SI STA [A, 16] + CMD [B, 8] Device A STA [B, 8] + STA [A, 16] Device B Figure 13. Daisy Chain Configuration 24bit Frame Word B − 8 bits Word A − 16 bits CSB SCLK 7 6 1 0 MSB SI 15 LSB 8 7 0 MSB LSB MSB LSB SI data is recognized on the falling SCLK. edge SO TSD MSB LSB SO data is shifted out on the rising SCLK edge. Modulo 16 counter begins on the first rising SCLK edge after CSB goes low. Modulo 16 counter ends − 16 bit word length valid. Modulo 8 counter begins on the next rising SCLK edge. Modulo 8 counter ends − 8 bit word length valid. valid n*8 bit frame. Figure 14. Daisy Chain – 24 bit Frame Format TSD Bit in Daisy Chain Operation The TSD status automatically propagates through the chain from the SO output of the previous device to the SI input of the next. This is shown in Figures 16 and 17, first without a TSD fault in either device (Figure 16), and then subsequently with a latched TSD fault (TSD = 1) in device “A” propagating through to device “B” (Figure 17). Since the TSD status of any device propagates automatically through the entire chain, it is not possible to determine which device (or devices) has a fault (TSD = 1). The usual status data from each device will need to be examined to determine where a fault (or faults) may exist. The SO path is designed to allow TSD status retrieval in a daisy chain configuration using NCV7726A or other devices with identical SPI functionality. The TSD status bit is OR’d with SI and then multiplexed with the device’s usual status data (Figure 15). CSB is held high and SI and SCLK are held low by the master before the start of the SPI frame. TSD status is immediately available as bit PRE_15 at SO (SO = TSD) when CSB goes low to begin the frame. The usual status data (SO = STA) becomes available after the first rising SCLK edge. www.onsemi.com 16 NCV7726A SI M U X TSD SO SO SPI SI SEL Figure 15. TSD SPI Link NCV7726A MCU MISO NCV7726A or NCV7718 CSB 1³0 CSB CSB SCLK 0 SCLK SCLK MOSI 0 SI SO Master Z³ 0 SI Device A Device B No TSD No TSD SO Z³ 0 SO Z³1 Figure 16. Daisy Chain Without TSD Fault MCU MISO Master NCV7726A NCV7726A or NCV7718 CSB 1³0 CSB CSB SCLK 0 SCLK SCLK MOSI 0 SI SO Z³ 1 SI Device A Device B Latched TSD No TSD Figure 17. Daisy Chain With TSD Fault Power Up/Down Control Driver Control The VCC supply input powers the device’s logic core. A VCC power−on reset (POR) function provides controlled power−up/down. VCC POR initializes the command input and status output registers to their default states (0x00), and ensures that the bridge output and SO drivers maintain Hi−Z as power is applied. SPI communication and normal device operation can proceed once VCC rises above the POR threshold and EN remains high. The VS1 and VS2 supply inputs power their respective output drivers (refer to Figure 2 and the PIN FUNCTION DESCRIPTION). The VSx inputs are monitored to ensure that the supply stays within the recommended operating range. If the VSx supply moves into either of the VS undervoltage or overvoltage regions, the output drivers are switched to Hi−Z but command and status data is preserved. Output drivers will remain on if OVLO = 0 during an overvoltage condition. The NCV7726A has the flexibility to control each half−bridge driver channel via SPI. Actual driver output state is determined by the command input and the current fault status bits as shown in Figure 18 and Table 3. The channels are divided into two groups and each group is selected by the HBSEL input bit (see Table 1). High−side (HSx) and low−side (LSx) drivers of the same channel cannot be active at the same time, and non−overlap delays are imposed when switching between HSx and LSx drivers in the same channel. This control design thus prevents current shoot−through. After the device has powered up and the drivers are allowed to turn on, the drivers remain on until commanded off via SPI or until a fault condition occurs. www.onsemi.com 17 NCV7726A VS HSx HBCNFx OUTx HBENx LSx HBCRx GND PSF−VSUV PSF−VSOV HBSTx SPI−OVLO SPI−ULDSC Q SRR R CONTROL S ULD LATCH OCS (reset dominant) TSD FAULT SPI Figure 18. Simplified Half−Bridge Control Logic Table 3. OUTPUT STATE VS. COMMAND AND STATUS Command Status HBENx HBCNFx HBSTx HBCRx OUTx X X 0 0 Z 0 X 0 0 Z 1 0 1 0 GND 1 1 1 1 VS www.onsemi.com 18 NCV7726A DIAGNOSTICS, PROTECTIONS, STATUS REPORTING AND RESET Overview intervention for output recovery and status memory clear. Diagnostics resulting in output lockout and non−latched status (VSOV or VSUV) may recover and clear automatically. Output configurations can be changed during output lockout. Outputs assume the new configurations or resume the previous configurations when an auto−recover fault is resolved. Table 5 shows output states during faults and output recovery modes, and Table 6 shows the status memory and memory clear modes. The NCV7726A employs diagnostics designed to prevent destructive overstress during a fault condition. Diagnostics are classified as either supervisory or protection functions (Table 4). Supervisory functions provide status information about device conditions. Protection functions provide status information and activate fault management behaviors. Diagnostics resulting in output shutdown and latched status may depend on a qualifier and may require user Table 4. DIAGNOSTIC CLASSES AND FUNCTIONS Name Class Function TSD Protection Thermal Shutdown OCS Protection Overcurrent Shutdown PSF Protection Under/overvoltage Lockout (OVLO = 1) ULD Protection Underload Shutdown HBSTX Supervisory Half−Bridge X Output Status HBCRX Supervisory Half−Bridge X Config Status TW Supervisory Thermal Warning Table 5. OUTPUT STATE VS. FAULT AND OUTPUT RECOVERY Fault Qualifier OUTx State OUTx Recovery OUTx Recovery Scope TSD − →Z Send SRR Per HBSEL OCS − →Z Send SRR Per HBSEL PSF – VSOV OVLO = 1 →Z→Yn | Yn+1 Auto* All Outputs OVLO = 0 Unaffected − − PSF – VSUV − →Z→Yn | Yn+1 Auto* All Outputs ULD ULDSC = 1 →Z Send SRR Per HBSEL ULDSC = 0 Unaffected − − − Unaffected − − TW *OUTx returns to its previous state (Yn) or new state (Yn+1) if fault is removed. Table 6. STATUS MEMORY VS. FAULT AND MEMORY CLEAR Fault Qualifier Status Memory Memory Clear Memory Clear Scope TSD − Latched Send SRR Per HBSEL OCS − Latched Send SRR Per HBSEL PSF – VSOV OVLO = X Non−Latched Auto* Global PSF – VSUV − Non−Latched Auto* Global ULD ULDSC = X Latched Send SRR Per HBSEL TW − Non−Latched Auto* Global *Status memory returns to its no−fault state if fault is removed. www.onsemi.com 19 NCV7726A Status Information Retrieval Diagnostics Details Current status information as selected by HBSEL is retrieved during each SPI frame. To preserve device configuration and output states, the previous SI data pattern must be sent during the status retrieval frame. Status information is prevented from being updated during a SPI frame but new status becomes available after CSB goes high at the end of the frame provided the frame did not contain an SRR request. For certain device faults, it may not be possible to determine which channel (or channels) has a particular fault (or faults) since notification may be via a single global status bit. The complete status data from all channels may need to be examined to determine where a fault may exist. The following sections describe individual diagnostics and behaviors. In each description and illustration, a SPI frame is assumed to always be valid and the SI data pattern sent for HBCNFx and HBENx is the same as the previous frame. Actual results can depend on asynchronous fault events and SPI clock frequency and frame rate. Undervoltage Lockout Global Notification, Global Operation Undervoltage detection and lockout control is provided by monitoring the VS1, VS2 and VCC supply inputs. Undervoltage hysteresis is provided to ensure clean detection transitions. Undervoltage timing is shown in Figure 19. Undervoltage at either VSx input turns off all outputs and sets the power supply fail (PSF) status bit. The outputs return to their previously programmed state and the PSF status bit is cleared when VSx rises above the hysteresis voltage level. SPI is available and programmed output enable and configuration states are maintained if proper VCC is present during VSx undervoltage. VCC undervoltage turns all outputs off and clears the command input and status output registers. Status Register Reset − SRR Sending SRR = 1 clears status memory and re*activates faulted outputs for channels as selected by HBSEL. The previous SI data pattern must be sent with SRR to preserve device configuration and output states. SRR takes effect at the rising edge of CSB and a timer (Tsrr) is started. Tsrr is the minimum time the user must wait between consecutive SRR requests. If a fault is still present when SRR is sent, protection can be re*engaged and shutdown will recur. The status registers can also be reset by toggling the EN pin or by VCC power*on reset. SI OUTx LS OUTx LS OUTx LS OUTx LS OUTx HS OUTx HS OUTx HS SO X No Fault PSF No Fault Z 0x00 No Fault Status ? No Fault PSF No Fault ? Output State ? OUTx GND ALL Z OUTx GND ALL Z 0x00 No Fault OUTx VS VSx VSUV Vcc VccUV t Figure 19. Undervoltage Timing www.onsemi.com 20 NCV7726A Overvoltage Lockout HBSEL = X), and sets the power supply fail (PSF) status bit (see Tables 5 and 6). The outputs return to their previously programmed state and the PSF status bit is cleared when VSx falls below the hysteresis voltage level. To reduce stress, it is recommended to operate the device with OVLO bit asserted to ensure that the drivers turn off during a load dump scenario. Global Notification, Global Operation Overvoltage detection and lockout control is provided by monitoring the VS1 and VS2 supply inputs. Overvoltage hysteresis is provided to ensure clean detection transitions. Overvoltage timing is shown in Figure 20. Overvoltage at either VSx input turns off all outputs if the overvoltage lockout input bit is set (OVLO = 1, SI OUTx ON OVLO=0 OUTx ON OUTx ON OUTx ON OVLO=1 OUTx ON OUTx OFF SO X No Fault PSF No Fault PSF No Fault No Fault PSF No Fault PSF No Fault No Fault ALL Z OUTx ON OUTx Z Status ? Output State ? OUTx ON VSOV VSx VSOV t Figure 20. Overvoltage Timing Overcurrent Shutdown (OCS) status bit is set. The OCS bit is cleared and channels are re*activated by sending SRR = 1. The channel group select (HBSEL) input bit determines which channels are affected by SRR. A persistent overcurrent cause should be resolved prior to re*activation to avoid repetitive stress on the drivers. Extended exposure to stress may affect device reliability. Global Notification per HBSEL, Per Half−Bridge Operation Overcurrent detection and shutdown control is provided by monitoring each HS and LS driver. Overcurrent timing is shown in Figure 21. Overcurrent in either driver starts a channel’s overcurrent delay timer. If overcurrent exists after the delay, both drivers are latched off and the overcurrent SI OUTx ON SRR=0 OUTx ON OUTx ON OUTx ON SRR=1 OUTx ON OUTx ON SO No Fault No Fault OCS OCS No Fault OCS Status No Fault OCS No Fault OCS Output State OUTx ON OUTx Z OUTx ON OUTx Z TdOc Output Current TdOc IsdSxx Figure 21. Overcurrent Timing www.onsemi.com 21 t NCV7726A Underload Shutdown (see Tables 5 and 6). The ULD bit is cleared and channels are re*activated by sending SRR = 1. The channel group select (HBSEL) input bit determines which channels are affected by SRR and also determines which half*bridges are latched off via the ULDSC command bit (see Table 1). Underload may result from a fault (e.g. open*load) condition or normal circuit behavior (e.g. L/R tau). In motor applications it is often desirable to actively brake the motor by turning on both HS or LS drivers in two half*bridge channels. If the configuration is two LS drivers (LS brake), an underload will result as the motor current decays normally. Utilizing HS brake instead will avoid underload notification. Global Notification per HBSEL, Shutdown Control per HBSEL, Per Half−Bridge Operation Underload detection and shutdown control is provided by monitoring each LS driver. Underload timing is shown in Figure 22. Underload at a LS driver starts the global underload delay timer. If underload occurs in another channel after the global timer has been started, the delay for any subsequent underload will be the remainder of the timer. The timer runs continuously with a persistent underload condition. If underload exists after the delay and if the underload shutdown (ULDSC) command bit is set, both HS and LS drivers are latched off and the underload (ULD) status bit is set; otherwise the drivers remain on and the ULD bit is set SI LSx ON ULDSC=0 LSx ON LSx ON SRR=1 LSx ON ULDSC=1 LSx ON SRR=1 LSx ON SO No Fault No Fault ULD ULD ULD No Fault No Fault Status Output State ULD OUTx ON No Fault ULD OUTx Z OUTx GND TdUld Output Current No Fault TdUld OUTx GND TdUld IuldLS t Figure 22. Underload Timing www.onsemi.com 22 NCV7726A Thermal Warning and Thermal Shutdown bit is automatically cleared when sensor temperature falls below the warning hysteresis level (TJ < TwHy). A channel’s output state is unaffected by TW. When sensor temperature exceeds the shutdown level (TJ > Tsd), the channel’s HS and LS drivers are latched off, the TW bit is/remains set, and the TSD (PRE_15) bit is set. The TSD bit is cleared and all affected channels in a group are re*activated (TJ < TsdHy) by sending SRR = 1. The channel group select (HBSEL) input bit determines which channels are affected by SSR. Global Notification, Per Half−Bridge Operation Thermal warning (TW) and thermal shutdown (TSD) detection and control are provided for each half*bridge by monitoring the driver pair’s thermal sensor. Thermal hysteresis is provided for each of the warning and shutdown functions to ensure clean detection transitions. Since TW notification precedes TSD, software polling of the TW bit enables avoidance of thermal shutdown. Thermal warning and shutdown timing is shown in Figure 23. The TW status bit is set when a half*bridge’s sensor temperature exceeds the warning level (TJ > Twr), and the SI OUTx ON OUTx ON OUTx ON OUTx ON OUTx ON SRR=1 OUTx ON SRR=1 SO No Fault TW No Fault TW TSD TW TW Status No Fault TW No Fault TW TSD TW Output State TW OUTx Z OUTx ON TW OUTx ON TJ TSD TWR TsdHy TwHy t Figure 23. Thermal Warning and Shutdown Timing The latched thermal shutdown (TSD) information is available on SO after CSB goes low until the first rising SCLK edge. The following procedures must be met for a true TSD reading: 1. SCLK and SI are low before the CSB cycle. Violating these conditions will results in an undetermined SPI behavior or/and an incorrect TSD reading. 2. CSB transitioning from high to low. 3. CSB setup time (TcsbSup) is satisfied and the data is captured before the first SCLK rising edge. www.onsemi.com 23 NCV7726A THERMAL PERFORMANCE ESTIMATES Figure 24. Transient R(t) vs. Pulse Time for 2 oz Spreader www.onsemi.com 24 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SSOP24 NB EP CASE 940AK ISSUE O SCALE 1:1 DATE 24 APR 2012 2X 0.20 C A-B NOTE 4 NOTE 6 D D A 2X 0.20 C NOTE 5 ÉÉÉ ÉÉÉ e L2 GAUGE PLANE E1 PIN 1 REFERENCE L1 H 13 24 E L DETAIL A A1 C NOTE 7 1 12 B 24X NOTE 6 TOP VIEW SEATING PLANE 0.20 C b 0.12 A 2X 12 TIPS M C A-B D DETAIL A A2 h h 0.10 C M 0.10 C 24X 0.15 SIDE VIEW M C A-B D A1 C SEATING PLANE c END VIEW NOTE 8 D2 0.15 E2 NOTE 8 RECOMMENDED SOLDERING FOOTPRINT 5.63 24X 1.15 2.84 6.40 1 0.40 0.65 PITCH DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: C A-B D DIM A A1 A2 b c D D2 E E1 E2 e h L L1 L2 M MILLIMETERS MIN MAX 1.70 --0.00 0.10 1.10 1.65 0.19 0.30 0.09 0.20 8.64 BSC 5.28 5.58 6.00 BSC 3.90 BSC 2.44 2.64 0.65 BSC 0.25 0.50 0.40 0.85 1.00 REF 0.25 BSC 0_ 8_ GENERIC MARKING DIAGRAM* BOTTOM VIEW 24X M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR PROTRUSION SHALL BE 0.10 MAX. AT MMC. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. DIMENSION b APPLIES TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO 0.25 FROM THE LEAD TIP. 4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION D IS DETERMINED AT DATUM PLANE H. 5. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. DIMENSION E1 IS DETERMINED AT DATUM PLANE H. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 8. CONTOURS OF THE THERMAL PAD ARE UNCONTROLLED WITHIN THE REGION DEFINED BY DIMENSIONS D2 AND E2. 98AON79998E SSOP24 NB EP XXXXXXXXXG AWLYYWW XXXX = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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