NCV8114
Voltage Regulator - CMOS,
Low Dropout
300 mA
The NCV8114 is 300 mA LDO that provides the engineer with a
very stable, accurate voltage with low noise suitable for space
constrained, noise sensitive applications. In order to optimize
performance for battery operated portable applications, the NCV8114
employs the dynamic quiescent current adjustment for very low IQ
consumption at no−load.
Features
•
TSOP−5
SN SUFFIX
CASE 483
1
5
XXXAYWG
G
1
Contact Factory for Other Voltage Options
Very Low Quiescent Current of Typ. 50 mA
Standby Current Consumption: Typ. 0.1 mA
Low Dropout: 135 mV Typical at 300 mA
±1% Accuracy at Room Temperature
High Power Supply Ripple Rejection: 75 dB at 1 kHz
Thermal Shutdown and Current Limit Protections
Stable with a 1 mF Ceramic Output Capacitor
Available in TSOP Package
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XXX = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
IN
1
GND
2
EN
3
5 OUT
4 N/C
(Top View)
Typical Applicaitons
•
•
•
•
MARKING
DIAGRAM
5
• Operating Input Voltage Range: 1.7 V to 5.5 V
• Available in Fixed Voltage Options: 0.9 V to 3.6 V
•
•
•
•
•
•
•
•
•
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Parking Camera Modules
Wireless Handsets, Wireless LAN, Bluetooth®, Zigbee®
Automotive Infotainment Systems
Other Battery Powered Applications
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 11 of this data sheet.
VIN
VOUT
IN
CIN
EN
ON
OFF
OUT
NCV8114
GND
COUT
1 mF
Ceramic
Figure 1. Typical Application Schematic
© Semiconductor Components Industries, LLC, 2016
October, 2019 − Rev. 3
1
Publication Order Number:
NCV8114/D
NCV8114
IN
ENABLE
LOGIC
EN
THERMAL
SHUTDOWN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT
AUTO LOW
POWER MODE
ACTIVE
DISCHARGE*
EN
GND
*Active output discharge function is present only in NCV8114ASNyyyTCG devices.
yyy denotes the particular VOUT option.
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
5
OUT
Regulated output voltage pin. A small ceramic capacitor with minimum value of 1 mF is needed from this
pin to ground to assure stability.
2
GND
Power supply ground.
3
EN
Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown
mode.
1
IN
Input pin. A small capacitor is needed from this pin to ground to assure stability.
4
N/C
Not connected. This pin can be tied to ground to improve thermal dissipation.
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN
−0.3 V to 6 V
V
Output Voltage
VOUT
−0.3 V to VIN + 0.3 V or 6 V
V
Enable Input
VEN
−0.3 V to VIN + 0.3 V or 6 V
V
Input Voltage (Note 1)
Output Short Circuit Duration
tSC
∞
s
Maximum Junction Temperature
TJ(MAX)
150
°C
Operating Ambient Temperature
TA
−40 to 125
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114,
ESD Machine Model tested per EIA/JESD22−A115,
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
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2
NCV8114
THERMAL CHARACTERISTICS (Note 3)
Rating
Thermal Characteristics, TSOP−5
Thermal Resistance, Junction−to−Air
Symbol
Value
Unit
RqJA
259.9
°C/W
3. Single component mounted on 1 oz, FR 4 PCB with 645 mm2 Cu area.
RECOMMENDED OPERATING CONDITIONS
Symbol
Min
Max
Unit
Input Voltage
Rating
VIN
1.7
Typ
5.5
V
Junction Temperature
TJ
−40
+125
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V for VOUT options greater than 1.5 V. Otherwise VIN
= 2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 0.9 V. Typical values are at TJ = +25°C.
Min./Max. are for TJ = −40°C and TJ = +125°C respectively (Note 4).
Parameter
Test Conditions
Operating Input Voltage
Output Voltage Accuracy
−40°C ≤ TJ ≤ 125°C
VOUT ≤ 2.0 V
VOUT > 2.0 V
Symbol
Min
Max
Unit
VIN
1.7
5.5
V
−40
+50
mV
−2
+3
%
VOUT
Typ
Line Regulation
VOUT + 0.5 V ≤ VIN ≤ 5.5 V (VIN ≥ 1.7 V)
RegLINE
0.01
0.1
%/V
Load Regulation
IOUT = 1 mA to 300 mA
RegLOAD
28
45
mV
IOUT = 1 mA to 300 mA or 300 mA to 1 mA
in 1 ms, COUT = 1 mF
TranLOAD
−50/
+30
Load Transient
Dropout Voltage (Note 5)
Output Current Limit
VOUT = 1.5 V
380
500
VOUT = 1.85 V
260
370
170
270
160
260
VOUT = 3.1 V
155
250
VOUT = 3.3 V
150
240
VOUT = 2.8 V
IOUT = 300 mA
mV
VOUT = 3.0 V
VDO
VOUT = 90% VOUT(nom)
ICL
IOUT = 0 mA
IQ
50
95
mA
Shutdown Current
VEN ≤ 0.4 V, VIN = 5.5 V
IDIS
0.01
1
mA
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
VEN_HI
VEN_LO
Ground Current
EN Pin Input Current
VEN = 5.5 V
IEN
Power Supply Rejection Ratio
VIN = 4.3 V, VOUT = 3.3 V
IOUT = 10 mA
Output Noise Voltage
VIN = 2.5 V, VOUT = 1.8 V, IOUT = 150 mA
f = 10 Hz to 100 kHz
VN
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
Thermal Shutdown Hysteresis
Active Output Discharge Resistance
f = 1 kHz
300
600
mV
mA
V
0.9
0.4
0.3
1.0
mA
75
dB
70
mVrms
TSD
160
°C
Temperature falling from TSD
TSDH
20
°C
VEN < 0.4 V, Version A only
RDIS
100
W
PSRR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.
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3
NCV8114
3.33
100
3.32
90
IQ, QUIESCENT CURRENT (mA)
VOUT, OUTPUT VOLTAGE (V)
TYPICAL CHARACTERISTICS
IOUT = 1 mA
3.31
3.30
3.29
3.28
IOUT = 300 mA
3.27
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
3.26
3.25
3.24
3.23
−40 −20
0
20
40
60
80
100
140
120
60
TJ = 125°C
50
40
TJ = 25°C
30
20
10
0
0
1
2
3
4
5
6
Figure 3. Output Voltage vs. Temperature −
VOUT = 3.3 V
Figure 4. Quiescent Current vs. Input Voltage
1000
125°C
25°C
−40°C
900
800
IGND, GROUND CURRENT (mA)
IGND, GROUND CURRENT (mA)
TJ = −40°C
VIN, INPUT VOLTAGE (V)
700
600
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
500
400
300
200
0.001
0.01
0.1
1
10
100
1000
600
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
500
400
300
200
100
0
−40 −20
IOUT = 1 mA
0
20
40
60
80
100
120 140
Figure 6. Ground Current vs. Temperature
REGLOAD, LOAD REGULATION (mV)
0.08
0.04
0
−0.12
700
Figure 5. Ground Current vs. Output Current
0.16
−0.04
IOUT = 300 mA
800
TJ, JUNCTION TEMPERATURE (°C)
0.12
−0.08
900
IOUT, OUTPUT CURRENT (mA)
0.20
REGLINE, LINE REGULATION (%/V)
80
70
TJ, JUNCTION TEMPERATURE (°C)
1000
100
0
VOUT = 3.3 V
IOUT = 0 mA
CIN = 1 mF
COUT = 1 mF
VIN = 4.3 V to 5.5 V
VOUT = 3.3 V
IOUT = 1 mA
CIN = 1 mF
COUT = 1 mF
−0.16
−0.20
−40 −20
0
20
40
60
80
100
120
140
50
45
40
35
30
25
20
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 1 mA to 300 mA
CIN = 1 mF
COUT = 1 mF
15
10
5
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Line Regulation vs. Temperature
Figure 8. Load Regulation vs. Temperature
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NCV8114
TYPICAL CHARACTERISTICS
160
140
200
TJ = 125°C
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
180
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
200
120
100
TJ = −40°C
80
60
40
20
0
TJ = 25°C
0
30
90
60
240 270 300
120 150 180 210
ISC, SHORT CIRCUIT CURRENT (mA)
ICL, CURRENT LIMIT (mA)
IOUT = 150 mA
80
60
IOUT = 10 mA
40
20
0
−40 −20
0
20
40
60
80
100
120 140
Figure 10. Dropout Voltage vs. Temperature
650
600
550
500
450
VIN = 4.3 V
VOUT = 90% VOUT(nom)
CIN = 1 mF
COUT = 1 mF
400
350
300
−40 −20
0
20
40
60
80
100
120
140
800
750
700
650
600
550
500
VIN = 4.3 V
VOUT = 0 V
CIN = 1 mF
COUT = 1 mF
450
400
350
300
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Current Limit vs. Temperature
Figure 12. Short Circuit Current vs.
Temperature
500
0.9
0.8
0.7
OFF → ON
0.6
ON → OFF
IEN, ENABLE CURRENT (nA)
VEN, ENABLE VOLTAGE (V)
120
100
Figure 9. Dropout Voltage vs. Output Current
700
0.5
0.4
0.1
140
IOUT = 300 mA
TJ, JUNCTION TEMPERATURE (°C)
750
0.2
160
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
IOUT, OUTPUT CURRENT (mA)
800
0.3
180
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0
−40 −20
0
20
40
60
80
100
120
140
450
400
350
VIN = 5.5 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
VEN = 5.5 V
300
250
VEN = 0.4 V
200
150
100
50
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Enable Voltage Threshold vs.
Temperature
Figure 14. Current to Enable Pin vs.
Temperature
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NCV8114
TYPICAL CHARACTERISTICS
120
90
60
30
0
−30
VIN = 5.5 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
−60
−90
−120
−150
−40 −20
0
20
40
60
100
120
140
40
VIN = 4.3 V
VOUT = 3.3 V
CIN = none
COUT = 1 mF
MLCC, X7R, 1206
10
30
15
0
−40 −20
100
1K
10K
100K
60
80
100
120 140
1
Stable Operation
VIN = 5.5 V
CIN = 1 mF
COUT = 1 mF
MLCC, X7R, 1206
1M
10M
0.01
0
30
60
90
120 150 180 210 240 270 300
IOUT, OUTPUT CURRENT (mA)
Figure 17. Power Supply Rejection Ratio −
COUT = 1 mF
Figure 18. Output Capacitor ESR vs. Output
Current
IOUT = 1 mA
IOUT = 10 mA
IOUT = 150 mA
IOUT = 300 mA
IOUT
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
100
1K
10K
100K
RMS Output Noise (mV)
10 Hz − 100 kHz 100 Hz − 100 kHz
1 mA
90.25
83.61
10 mA
84.55
77.23
150 mA
86.57
80.86
300 mA
95.36
90.17
100
10
40
20
FREQUENCY (Hz)
1K
1
0
Unstable Operation
0.1
10K
10
VIN = 4.3 V
VEN = 0 V
CIN = 1 mF
COUT = 1 mF
45
10
50
0
60
100
IOUT = 1 mA
IOUT = 10 mA
IOUT = 150 mA
IOUT = 300 mA
60
10
90
75
Figure 16. Discharge Resistance vs.
Temperature
70
20
105
Figure 15. Disable Current vs. Temperature
80
30
120
TJ, JUNCTION TEMPERATURE (°C)
ESR (W)
RR, RIPPLE REJECTION (dB)
80
150
135
TJ, JUNCTION TEMPERATURE (°C)
90
OUTPUT VOLTAGE NOISE (nV/√Hz)
RDIS, DISCHARGE RESISTANCE (W)
IDIS, DISABLE CURRENT (nA)
150
1M
FREQUENCY (Hz)
Figure 19. Output Voltage Noise Spectral Density − COUT = 1 mF
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NCV8114
500 mV/div
VEN
VEN
VIN = 4.3 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 1 mA
CIN = 4.7 mF
COUT = 4.7 mF
VOUT
VEN
IINRUSH
VIN = 4.3 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 300 mA
CIN = 4.7 mF
COUT = 4.7 mF
VOUT
50 ms/div
Figure 22. Enable Turn−on Response −
COUT = 4.7 mF, IOUT = 1 mA
Figure 23. Enable Turn−on Response −
COUT = 4.7 mF, IOUT = 300 mA
VIN
500 mV/div
50 ms/div
tRISE = 1 ms
VIN = 4.3 V to 5.3 V
VOUT = 3.3 V
IOUT = 1 mA
CIN = 1 mF
COUT = 1 mF
VOUT
10 mV/div
1 V/div
1 V/div
Figure 21. Enable Turn−on Response −
COUT = 1 mF, IOUT = 300 mA
500 mV/div
Figure 20. Enable Turn−on Response −
COUT = 1 mF, IOUT = 1 mA
200 mA/div
500 mV/div
VOUT
50 ms/div
IINRUSH
10 mV/div
VIN = 4.3 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 300 mA
CIN = 1 mF
COUT = 1 mF
50 ms/div
1 V/div
1 V/div
VOUT
IINRUSH
200 mA/div
500 mV/div
VIN = 4.3 V
VOUT = 3.3 V
VEN = 1 V
IOUT = 1 mA
CIN = 1 mF
COUT = 1 mF
200 mA/div
IINRUSH
VEN
200 mA/div
500 mV/div
TYPICAL CHARACTERISTICS
VIN
tFALL = 1 ms
VIN = 5.3 V to 4.3 V
VOUT = 3.3 V
IOUT = 1 mA
CIN = 1 mF
COUT = 1 mF
VOUT
20 ms/div
20 ms/div
Figure 24. Line Transient Response − Rising
Edge, IOUT = 1 mA
Figure 25. Line Transient Response − Falling
Edge, IOUT = 1 mA
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NCV8114
500 mV/div
tRISE = 1 ms
VIN = 4.3 V to 5.3 V
VOUT = 3.3 V
IOUT = 300 mA
CIN = 1 mF
COUT = 1 mF
VOUT
20 mV/div
VIN
VIN
tFALL = 1 ms
VOUT
VIN = 5.3 V to 4.3 V
VOUT = 3.3 V
IOUT = 300 mA
CIN = 1 mF
COUT = 1 mF
4 ms/div
Figure 26. Line Transient Response − Rising
Edge, IOUT = 300 mA
Figure 27. Line Transient Response − Falling
Edge, IOUT = 300 mA
tRISE = 1 ms
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
20 mV/div
IOUT
100 mA/div
4 ms/div
VOUT
IOUT
tFALL = 1 ms
VOUT
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
5 ms/div
20 ms/div
Figure 28. Load Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
Figure 29. Load Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
IOUT
tRISE = 1 ms
VIN = 4.3 V
VOUT = 3.3 V
CIN = 4.7 mF (MLCC)
COUT = 4.7 mF (MLCC)
IOUT
20 mV/div
VOUT
20 mV/div
VOUT
100 mA/div
100 mA/div
20 mV/div
100 mA/div
20 mV/div
500 mV/div
TYPICAL CHARACTERISTICS
tFALL = 1 ms
VIN = 4.3 V
VOUT = 3.3 V
CIN = 4.7 mF (MLCC)
COUT = 4.7 mF (MLCC)
5 ms/div
20 ms/div
Figure 30. Load Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
Figure 31. Load Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 1 mA to 300 mA
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NCV8114
TYPICAL CHARACTERISTICS
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
Full Load
200 mA/div
VIN
IOUT
Overheating
Thermal
Shutdown
VIN = 5.5 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
1 V/div
1 V/div
VOUT
TSD Cycling
10 ms/div
10 ms/div
Figure 32. Turn−on/off − Slow Rising VIN
Figure 33. Short Circuit and Thermal
Shutdown
VEN
500 mV/div
tFALL = 1 ms
COUT = 4.7 mF
1 V/div
VOUT
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
COUT = 1 mF
500 ms/div
Figure 34. Enable Turn−off
0.7
450
PD(MAX), TA = 25°C, 2 oz Cu
400
0.5
PD(MAX), TA = 25°C, 1 oz Cu
350
300
qJA, 1 oz Cu
250
200
0.6
0.4
0.3
0.2
qJA, 2 oz Cu
0
100
200
300
400
500
600
COPPER HEAT SPREADER AREA (mm2)
Figure 35.
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9
700
0.1
PD(MAX), MAXIMUM POWER
DISSIPATION (W)
qJA, JUNCTION−TO−AMBIENT
THERMAL RESISTANCE (°C/W)
500
NCV8114
APPLICATIONS INFORMATION
General
The NCV8114 is a high performance 300 mA Low
Dropout Linear Regulator. This device delivers very high
PSRR (over 75 dB at 1 kHz) and excellent dynamic
performance as load/line transients. In connection with very
low quiescent current this device is very suitable for various
battery powered applications such as tablets, cellular
phones, wireless and many others. The device is fully
protected in case of output overload, output short circuit
condition and overheating, assuring a very robust design.
disable state the device consumes as low as typ. 10 nA from
the VIN.
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCV8114 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 300 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Input Capacitor Selection (CIN)
Output Current Limit
It is recommended to connect at least a 1 mF Ceramic X5R
or X7R capacitor as close as possible to the IN pin of the
device. This capacitor will provide a low impedance path for
unwanted AC signals or noise modulated onto constant
input voltage. There is no requirement for the min. /max.
ESR of the input capacitor but it is recommended to use
ceramic capacitors for their low ESR and ESL. A good input
capacitor will limit the influence of input trace inductance
and source resistance during sudden load current changes.
Larger input capacitor may be necessary if fast and large
load transients are encountered in the application.
Output Current is internally limited within the IC to a
typical 600 mA. The NCV8114 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 630 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU − 140°C typical).
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Output Decoupling (COUT)
The NCV8114 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCV8114 is designed to
remain stable with minimum effective capacitance of
0.22mF to account for changes with temperature, DC bias
and package size. Especially for small package size
capacitors such as 0402 the effective capacitance drops
rapidly with the applied DC bias.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 2 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
Power Dissipation
As power dissipated in the NCV8114 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part. For reliable operation, junction temperature
should be limited to +125°C.
The maximum power dissipation the NCV8114 can
handle is given by:
Enable Operation
The NCV8114 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 2). Expose
pad should be tied the shortest path to the GND pin.
Power Supply Rejection Ratio
The NCV8114 features very good Power Supply
Rejection ratio. If desired the PSRR at higher frequencies in
the range 100 kHz − 10 MHz can be tuned by the selection
of COUT capacitor and proper PCB layout.
Turn−On Time
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
ORDERING INFORMATION
Device
Voltage Option
Marking
NCV8114ASN120T1G
1.2 V
DEC
NCV8114ASN150T1G
1.5 V
DED
NCV8114ASN165T1G
1.65 V
DEJ
NCV8114ASN180T1G
1.8 V
DEE
NCV8114ASN250T1G
2.5 V
DEH
NCV8114ASN280T1G
2.8 V
DEF
NCV8114ASN300T1G
3.0 V
DEG
NCV8114ASN330T1G
3.3 V
DEA
NCV8114BSN120T1G
1.2 V
DFC
NCV8114BSN150T1G
1.5 V
DFD
NCV8114BSN180T1G
1.8 V
DFE
NCV8114BSN280T1G
2.8 V
DFF
NCV8114BSN300T1G
3.0 V
DFG
NCV8114BSN330T1G
3.3 V
DFA
Option
Package
Shipping†
TSOP−5
(Pb−Free)
3000 / Tape & Reel
(Contact sales
office for
availability)
With output active
discharge function
Without output active
discharge function
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Bluetooth is a registered trademark of Bluetooth SIG.
ZigBee is a registered trademark of ZigBee Alliance.
www.onsemi.com
11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOP−5
CASE 483
ISSUE N
5
1
SCALE 2:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
D 5X
NOTE 5
2X
DATE 12 AUG 2020
0.20 C A B
0.10 T
M
2X
0.20 T
5
B
1
4
2
B
S
3
K
DETAIL Z
G
A
A
TOP VIEW
DIM
A
B
C
D
G
H
J
K
M
S
DETAIL Z
J
C
0.05
H
C
SIDE VIEW
SEATING
PLANE
END VIEW
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
0.95
0.037
MILLIMETERS
MIN
MAX
2.85
3.15
1.35
1.65
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
0_
10 _
2.50
3.00
1.9
0.074
5
5
XXXAYWG
G
1
1
Analog
2.4
0.094
XXX = Specific Device Code
A
= Assembly Location
Y
= Year
W = Work Week
G
= Pb−Free Package
1.0
0.039
XXX MG
G
Discrete/Logic
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ARB18753C
TSOP−5
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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