NCV8154
Voltage Regulator - Dual
Low IQ, Low Dropout,
Dual Input
300 mA
www.onsemi.com
The NCV8154 is 300 mA, Dual Output Linear Voltage Regulator
that offers two independent input pins and provides a very stable and
accurate voltage with ultra low noise and very high Power Supply
Rejection Ratio (PSRR) suitable for RF applications. The NCV8154 is
suitable for powering RF blocks of automotive infotainment systems
and other power sensitive device. Due to low power consumption the
NCV8154 offers high efficiency and low thermal dissipation.
DFN10, 3x3
CASE 485C
PIN CONNECTIONS
Features
• Operating Input Voltage Range: 1.9 V to 5.25 V
• Two Independent Input Voltage Pins
• Two Independent Output Voltage (for detail please refer to Ordering
•
•
•
•
•
•
•
•
•
Information)
Low IQ of typ. 55 mA per Channel
High PSRR: 75 dB at 1 kHz
Very Low Dropout: 140 mV Typical at 300 mA
Thermal Shutdown and Current Limit Protections
Stable with a 1 mF Ceramic Output Capacitor
Available in DFN10 3x3mm and WDFN6 1.5x1.5mm Packages
Active Output Discharge for Fast Output Turn-Off
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to
+125°C Ambient Operating Temperature Range
These are Pb-free Devices
VOUT1
OUT1
IN2
VOUT2
OUT2
EN1
CIN1
1 mF
CIN2
1 mF
EN2
GND
OUT1
2
9 IN1
OUT2
3
GND
4
7 EN2
N/C
5
6 N/C
8 IN2
EP
EN1
1
6
OUT1
IN
2
5
OUT2
EN2
3
4
GND
NCV8154x
VVVVV
ALYWG
G
1
X MG
G
x
NCV8154
IN1
10 EN1
MARKING DIAGRAMS
Inspection
Wireless LAN, Bluetooth®, ZigBee® Interfaces
Automotive Infotainment Systems
VIN2
1
WDFN6
(Top View)
• Applications Requiring Wettable Flanks for Enhanced Visual
VIN1
GND
DFN10
(Top View)
Typical Applications
•
•
WDFN6, 1.5x1.5
CASE 511BJ
COUT2
1 mF
COUT1
1 mF
Figure 1. Typical Application Schematic
= NCV8154N − Non wettable flank
= NCV8154W − Wettable flank
VVVVV = Voltage Option
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
X
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 16 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
October, 2019 − Rev. 11
1
Publication Order Number:
NCV8154/D
NCV8154
IN1*
ENABLE
LOGIC
EN1
THERMAL
SHUTDOWN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT1
ACTIVE
DISCHARGE
EN1
GND
IN2*
ENABLE
LOGIC
EN2
THERMAL
SHUTDOWN
BANDGAP
REFERENCE
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT2
ACTIVE
DISCHARGE
EN2
GND
*Dual IN available only for DFN10
Figure 2. Simplified Schematic Block Diagram
Table 1. PIN FUNCTION DESCRIPTION − DFN10
Pin No.
Pin Name
Description
1
GND
Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
2
OUT1
Regulated output voltage of the first channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
3
OUT2
Regulated output voltage of the second channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
4
GND
Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
5,6
N/C
Not connected, can be tied to ground plane to improve thermal dissipation.
7
EN2
Driving EN2 over 0.9 V turns-on OUT2. Driving EN below 0.4 V turns-off the OUT2 and activates the active
discharge.
8
IN2
Inputs pin for second channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin.
9
IN1
Inputs pin for first channel. It is recommended to connect 1 mF ceramic capacitor close to the device pin.
10
EN1
Driving EN1 over 0.9 V turns-on OUT1. Driving EN below 0.4 V turns-off the OUT1 and activates the active
discharge.
−
EXP
Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation.
www.onsemi.com
2
NCV8154
Table 2. PIN FUNCTION DESCRIPTION − WDFN6
Pin No.
Pin Name
1
EN1
2
IN
Description
Driving EN1 over 0.9 V turns-on OUT1. Driving EN below 0.4 V turns-off the OUT1.
Inputs pin. It is recommended to connect at least 1 mF ceramic capacitor close to the device pin.
3
EN2
Driving EN2 over 0.9 V turns-on OUT2. Driving EN below 0.4 V turns-off the OUT2.
4
GND
Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
5
OUT2
Regulated output voltage of the second channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
6
OUT1
Regulated output voltage of the first channel. A small 1 mF ceramic capacitor is needed from this pin to
ground to assure stability.
Table 3. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN1, VIN2
−0.3 V to 6 V
V
Output Voltage
VOUT1, VOUT2
−0.3 V to VIN + 0.3 V or 6 V
V
Enable Inputs
VEN1, VEN2
−0.3 V to VIN + 0.3 V or 6 V
V
Input Voltage (Note 1)
Output Short Circuit Duration
tSC
Indefinite
s
Operating Ambient Temperature Range
TA
−40 to +125
°C
TJ(MAX)
150
°C
Maximum Junction Temperature
Storage Temperature
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2,000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
Table 4. THERMAL CHARACTERISTICS (Note 3)
Rating
Symbol
Value
Thermal Characteristics, DFN10 3 × 3 mm,
Thermal Resistance, Junction-to-Air
qJA
109
Thermal Characteristics, WDFN6 1.5 × 1.5 mm,
Thermal Resistance, Junction-to-Air
qJA
207
Unit
°C/W
°C/W
3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
1.9
5.25
V
Junction Temperature
TJ
−40
125
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
3
NCV8154
Table 5. ELECTRICAL CHARACTERISTICS
(−40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 1 mA, CIN = COUT = 1 mF.
Typical values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 125°C respectively.) (Note 4)
Test Conditions
Parameter
Operating Input Voltage
VOUT > 2 V
Output Voltage Accuracy
−40°C ≤ TJ ≤ 125°C
Line Regulation
VOUT + 0.5 V ≤ VIN ≤ 5 V
Load Regulation
IOUT = 1 mA to 300 mA
Symbol
Min
VIN
VOUT
VOUT ≤ 2 V
Max
Unit
1.9
5.25
V
−3
+3
%
−60
RegLINE
DFN10
WDFN6
RegLOAD
VOUT(nom) = 1.8 V
VOUT(nom) = 2.8 V
Typ
VDO
+60
mV
0.02
0.2
%/V
15
40
25
45
335
430
160
290
140
270
Dropout Voltage (Note 5)
IOUT = 300 mA
Output Current Limit
VOUT = 90% VOUT(nom)
ICL
400
IOUT = 0 mA, EN1 = VIN, EN2 = 0 V or EN2 = VIN,
EN1 = 0 V
IQ
55
100
IOUT1 = IOUT2 = 0 mA, VEN1 = VEN2 = VIN
IQ
110
200
IDIS
0.1
1
VOUT(nom) = 3.3 V
Quiescent Current
mV
mV
mA
mA
Shutdown current (Note 6)
VEN ≤ 0.4 V, VIN = 5.25 V
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
EN Pin Input Current
VEN = VIN = 5.25 V
Power Supply Rejection Ratio
VIN = VOUT + 1 V for VOUT > 2 V, VIN =
2.5 V, for VOUT ≤ 2 V, IOUT = 10 mA
Output Noise Voltage
f = 10 Hz to 100 kHz
Active Discharge Resistance
VIN = 4 V, VEN < 0.4 V
RDIS
50
W
Thermal Shutdown Temperature
Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
VEN_HI
VEN_LO
f = 1 kHz
mA
V
0.9
0.4
IEN
0.3
PSRR
75
dB
VN
75
mVrms
−
20
1.0
−
mA
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.
6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state.
www.onsemi.com
4
NCV8154
3.35
3.34
1.83
1.82
1.81
IOUT = 1 mA
1.80
IOUT = 300 mA
1.79
1.78
1.77
1.76
1.75
−40
IGND, GROUND CURRENT (mA)
VIN = 2.8 V
VOUT = 1.8 V
CIN = COUT = 1 mF
−20
0
20
40
60
80
100
VOUT, OUTPUT VOLTAGE (V)
1.85
1.84
3.33
3.32
3.29
3.28
3.26
3.25
−40
120 140
−20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature
VOUT = 1.8 V
Figure 4. Output Voltage vs. Temperature
VOUT = 3.3 V
60
54
TJ = 125°C
480
TJ = 25°C
420
TJ = −40°C
360
300
240
180
120
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
60
0
60
120
180
240
TJ = 125°C
48
TJ = −40°C
52
TJ = 25°C
36
30
24
18
12
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
6
0
300
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
IOUT, OUTPUT CURRENT (mA)
VIN, INPUT VOLTAGE (V)
Figure 5. Ground Current vs. Output Current
Figure 6. Quiescent Current vs. Input Voltage
5.5
0.1
LINEREG, LINE REGULATION (%/V)
60
IQ, QUIESCENT CURRENT (mA)
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
3.27
540
58
56
54
52
50
0.08
0.06
0.04
0.02
0
−0.02
48
−0.04
46
44
−0.06
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
42
40
−40
IOUT = 300 mA
3.30
600
0
IOUT = 1 mA
3.31
IQ, QUIESCENT CURRENT (mA)
VOUT, OUTPUT VOLTAGE (V)
TYPICAL CHARACTERISTICS
−20
0
20
40
60
80
100
120 140
VIN = 2.8 V
VOUT = 1.8 V
CIN = COUT = 1 mF
0.08
−0.1
−40
−20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Quiescent Current vs. Temperature
Figure 8. Line Regulation vs. Temperature
VOUT = 1.8 V
www.onsemi.com
5
NCV8154
TYPICAL CHARACTERISTICS
30
REGLOAD, LOAD REGULATION (mV)
LINEREG, LINE REGULATION (%/V)
0.1
0.08
0.06
0.04
0.02
0
−0.02
−0.04
−0.06
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
−0.08
−0.1
−40
−20
0
20
40
60
80
100
120 140
21
18
15
12
9
6
VIN = 3.3 V
VOUT = 2.8 V
CIN = COUT = 1 mF
3
0
−40
−20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Line Regulation vs. Temperature
VOUT = 3.3 V
Figure 10. Load Regulation vs. Temperature
VOUT = 2.8 V
225
VDROP, DROPOUT VOLTAGE (mV)
27
24
21
18
15
12
9
6
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
3
−20
0
20
40
60
80
100
200
175
150
TJ = 125°C
125
100
50
25
0
120 140
TJ = −40°C
75
TJ = 25°C
30
0
60
80
120 150
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
180 210
240 270 300
TJ, JUNCTION TEMPERATURE (°C)
IOUT, OUTPUT CURRENT (mA)
Figure 11. Load Regulation vs. Temperature
VOUT = 3.3 V
Figure 12. Dropout Voltage vs. Output Current
225
VDROP, DROPOUT VOLTAGE (mV)
REGLOAD, LOAD REGULATION (mV)
24
TJ, JUNCTION TEMPERATURE (°C)
30
0
−40
27
200
IOUT = 300 mA
175
150
125
100
IOUT = 150 mA
75
50
IOUT = 0 mA
25
0
−40
−20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Dropout Voltage vs. Temperature
www.onsemi.com
6
NCV8154
600
575
575
550
525
VIN = 3.8 V
500
475
450
VIN = 5.25 V
425
400
VOUT = 90% VOUT(NOM)
CIN = COUT = 1 mF
375
0
20
40
60
80
100
550
525
475
VIN = 5.25 V
450
425
400
350
−40
120 140
VOUT = 0 V
CIN = COUT = 1 mF
375
−20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. Current Limit vs. Temperature
Figure 15. Short−Circuit Current vs.
Temperature
100
520
90
510
500
490
480
470
460
450
VOUT = 0 V
CIN = COUT = 1 mF
440
2.8
3.1
3.4
3.7
4.0
4.3
4.6
4.9
5.2
5.5
80
70
120 140
VIN = 4.3 V
VOUT = 0 V
VEN = 0 V
CIN = COUT = 1 mF
60
50
40
30
20
10
0
−40
−20
0
20
40
60
80
100
120 140
VIN, INPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 16. Short−Circuit Current vs. Input
Voltage
Figure 17. Disable Current vs. Temperature
1.0
500
0.9
450
0.8
OFF −> ON
0.7
ON −> OFF
0.6
0.5
0.4
0.3
VIN = 4.3 V
VOUT = 0 V
CIN = COUT = 1 mF
0.2
0.1
0
−40
VIN = 3.8 V
500
530
430
2.5
VEN, ENABLE VOLTAGE (V)
−20
IDIS, DISABLE CURRENT (nA)
ISC, SHORT−CIRCUIT CURRENT
(mA)
350
−40
ISC, SHORT−CIRCUIT CURRENT
(mA)
600
−20
0
20
40
60
80
100
IEN, ENABLE CURRENT (nA)
ICL, CURRENT LIMIT (mA)
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
50
0
−40
120 140
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
100
−20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 18. Enable Thresholds vs. Temperature
Figure 19. Current to Enable Pin vs.
Temperature
www.onsemi.com
7
120 140
NCV8154
TYPICAL CHARACTERISTICS
90
80
70
60
50
40
30
20
VIN = 4.3 V
VOUT = 1.8 V
CIN = COUT = 1 mF
10
0
−40
−20
0
20
60
80
100
80
70
60
50
40
1 mA
10 mA
100 mA
150 mA
300 mA
30
20
10
0
0.1
120 140
1
10
100
1k
FREQUENCY (kHz)
Figure 20. Discharge Resistivity vs.
Temperature
Figure 21. Power Supply Rejection Ratio,
VOUT = 1.8 V
100
VIN = 4.3 V + 100 mVPP
VOUT = 3.3 V
CIN = none
COUT = 1 mF, MLCC
90
80
70
10k
VOUT = 1.8 V
VOUT = 3.3 V
10
60
ESR (W)
RR, RIPPLE REJECTION (dB)
40
VIN = 2.8 V + 100 mVPP
VOUT = 1.8 V
CIN = none
COUT = 1 mF, MLCC
TJ, JUNCTION TEMPERATURE (°C)
100
50
40
1
1 mA
10 mA
100 mA
150 mA
300 mA
30
20
10
0
0.1
1
10
100
1k
0.1
0
10k
VIN = VOUT = 1 V
CIN = COUT = 1 mF, MLCC,
size 1206
60
180
240
300
IOUT, OUTPUT CURRENT (mA)
Figure 22. Power Supply Rejection Ratio,
VOUT = 3.3 V
Figure 23. Output Capacitor ESR vs. Output
Current
1 mA
10 mA
150 mA
300 mA
1
IOUT
0.1
0.01
120
FREQUENCY (kHz)
10
OUTPUT VOLTAGE NOISE (mV/rtHz)
RR, RIPPLE REJECTION (dB)
100
90
RDIS, DISCHARGE RESISTIVITY (W)
100
VIN = 2.8 V
VOUT = 1.8 V
CIN = COUT = 1 mF
0.001
0.01
0.1
1
10
100
RMS Output Noise (mV)
10 Hz − 100 kHz
100 Hz − 100 kHz
1 mA
77.84
77.28
10 mA
71.71
70.48
150 mA
71.95
70.88
300 mA
72.71
71.67
1000
FREQUENCY (kHz)
Figure 24. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 1 mF
www.onsemi.com
8
NCV8154
TYPICAL CHARACTERISTICS
1 mA
10 mA
150 mA
300 mA
1
RMS Output Noise (mV)
IOUT
10 Hz − 100 kHz
100 Hz − 100 kHz
1 mA
119.7
117.87
10 mA
113.47
111.47
150 mA
113.84
112.05
300 mA
115.95
114.03
0.1
0.01
VIN = 4.3 V
VOUT = 3.3 V
CIN = COUT = 1 mF
0.001
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
500 mV/div
500 mV/div 200 mA/div
VEN
IIN
VOUT
VIN = 2.8 V
VOUT = 1.8 V
IOUT = 10 mA
COUT = COUT = 1 mF
VEN
IIN
VOUT
VIN = 2.8 V
VOUT = 1.8 V
IOUT = 10 mA
COUT = COUT = 4.7 mF
40 ms/div
Figure 27. Enable Turn−on Response −
VOUT = 1.8 V, COUT = 4.7 mF
IIN
VIN = 3.8 V
VOUT = 3.3 V
IOUT = 10 mA
COUT = COUT = 1 mF
VOUT
VEN
50 mA/div
200 mA/div
VEN
500 mV/div
40 ms/div
Figure 26. Enable Turn−on Response −
VOUT = 1.8 V, COUT = 1 mF
1 V/div
1 V/div
100 mA/div
500 mV/div
500 mV/div
100 mA/div
500 mV/div
Figure 25. Output Voltage Noise Spectral Density for VOUT = 3.3 V, COUT = 1 mF
50 mA/div
OUTPUT VOLTAGE NOISE (mV/rtHz)
10
IIN
VOUT
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 10 mA
COUT = COUT = 4.7 mF
40 ms/div
40 ms/div
Figure 28. Enable Turn−on Response −
VOUT = 3.3 V, COUT = 1 mF
Figure 29. Enable Turn−on Response −
VOUT = 3.3 V, COUT = 4.7 mF
www.onsemi.com
9
NCV8154
500 mV/div
tRISE = 1 ms
VIN
tFALL = 1 ms
20 mV/div
VIN
VOUT
VIN = 3.8 V to 4.8 V
IOUT = 10 mA
CIN = none
COUT = 1 mF
VOUT
VIN = 4.8 V to 3.8 V
IOUT = 10 mA
CIN = none
COUT = 1 mF
8 ms/div
Figure 31. Line Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 10 mA
tRISE = 1 ms
VOUT
VIN = 3.8 V to 4.8 V
IOUT = 300 mA
CIN = none
COUT = 1 mF
20 mV/div
VIN
500 mV/div
8 ms/div
Figure 30. Line Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 10 mA
VIN = 4.8 V to 3.8 V
IOUT = 300 mA
CIN = none
COUT = 1 mF
VIN
tFALL = 1 ms
VOUT
4 ms/div
Figure 33. Line Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 300 mA
VIN
500 mV/div
4 ms/div
Figure 32. Line Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 300 mA
tRISE = 1 ms
20 mV/div
20 mV/div
500 mV/div
20 mV/div
500 mV/div
20 mV/div 500 mV/div
TYPICAL CHARACTERISTICS
VOUT
VIN = 3.8 V to 4.8 V
IOUT = 10 mA
CIN = none
COUT = 4.7 mF
VIN = 4.8 V to 3.8 V
IOUT = 10 mA
CIN = none
COUT = 4.7 mF
VIN
tFALL = 1 ms
VOUT
4 ms/div
4 ms/div
Figure 34. Line Transient Response − Rising
Edge, VOUT = 3.3 V, IOUT = 10 mA,
COUT = 4.7 mF
Figure 35. Line Transient Response − Falling
Edge, VOUT = 3.3 V, IOUT = 10 mA,
COUT = 4.7 mF
www.onsemi.com
10
NCV8154
IOUT1
VOUT1
100 mA/div
VIN = VOUT + 1 V
VOUT1 = 3.3 V
tRISE = 1 ms V
OUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
50 mV/div 50 mV/div
50 mV/div 50 mV/div 100 mA/div
TYPICAL CHARACTERISTICS
VOUT2
IOUT1
tFALL = 1 ms
VOUT1
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
VOUT2
4 ms/div
100 ms/div
Figure 36. Load Transient Response − 1.8 V −
Rising Edge, IOUT1 = 100 mA to 300 mA
Figure 37. Load Transient Response − 1.8 V −
Falling Edge, IOUT1 = 300 mA to 100 mA
tRISE = 500 ns
VOUT1
50 mV/div 50 mV/div 100 mA/div
IOUT1
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
VOUT2
tFALL = 500 ns
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
VOUT1
VOUT2
10 ms/div
Figure 39. Load Transient Response − 1.8 V −
Falling Edge, IOUT1 = 300 mA to 1 mA
IOUT1
VOUT1
100 mA/div
4 ms/div
Figure 38. Load Transient Response − 1.8 V −
Rising Edge, IOUT1 = 1 mA to 300 mA
VIN = VOUT + 1 V
VOUT1 = 3.3 V
tRISE = 500 ns V
OUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
50 mV/div 50 mV/div
50 mV/div 50 mV/div 100 mA/div
50 mV/div 50 mV/div 100 mA/div
IOUT1
VOUT2
IOUT1
tFALL = 500 ns
VOUT1
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
VOUT2
4 ms/div
4 ms/div
Figure 40. Load Transient Response − 1.8 V −
Rising Edge, IOUT = 50 mA to 300 mA
Figure 41. Load Transient Response − Falling
Edge, IOUT = 300 mA to 50 mA
www.onsemi.com
11
NCV8154
VOUT1
100 mA/div
50 mV/div 50 mV/div
IOUT1
VIN = VOUT + 1 V
VOUT1 = 3.3 V
tRISE = 500 ns VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
VOUT2
IOUT1
tFALL = 500 ns
VOUT1
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
VOUT2
4 ms/div
100 ms/div
Figure 42. Load Transient Response − 3.3 V −
Rising Edge, IOUT1 = 100 mA to 300 mA
Figure 43. Load Transient Response − 3.3 V −
Falling Edge, IOUT1 = 300 mA to 100 mA
tRISE = 500 ns
VOUT1
100 mA/div
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
50 mV/div 50 mV/div
IOUT1
IOUT1
VOUT2
tFALL = 500 ns
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
VOUT1
VOUT2
10 ms/div
Figure 45. Load Transient Response − 3.3 V −
Falling Edge, IOUT1 = 300 mA to 1 mA
IOUT1
tRISE = 500 ns
VOUT1
100 mA/div
4 ms/div
Figure 44. Load Transient Response − 3.3 V −
Rising Edge, IOUT1 = 1 mA to 300 mA
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
50 mV/div 50 mV/div
50 mV/div 50 mV/div 100 mA/div
50 mV/div 50 mV/div 100 mA/div
50 mV/div 50 mV/div 100 mA/div
TYPICAL CHARACTERISTICS
VOUT2
IOUT1
tFALL = 500 ns
VOUT1
VOUT2
VIN = VOUT + 1 V
VOUT1 = 3.3 V
VOUT2 = 1.8 V
IOUT2 = 10 mA
COUT1 = 1 mF
COUT2 = 1 mF
4 ms/div
4 ms/div
Figure 46. Load Transient Response − 3.3 V −
Rising Edge, IOUT = 50 mA to 300 mA
Figure 47. Load Transient Response − Falling
Edge, IOUT = 300 mA to 50 mA
www.onsemi.com
12
NCV8154
500 mV/div
COUT = 1 mF
1 V/div
COUT = 4.7 mF
VEN
VOUT
VIN = 4.3 V
VOUT = 3.3 V
IOUT = 0 mA
COUT = 1 mF, 4.7 mF
COUT = 4.7 mF
COUT = 1 mF
200 ms/div
200 ms/div
Figure 48. Enable Turn−off,
VOUT = 1.8 V
Figure 49. Enable Turn−off,
VOUT = 3.3 V
VIN
VOUT1
1 V/div
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V
IOUT1 = 10 mA
IOUT2 = 10 mA
CIN = COUT1 =
COUT2 = 1 mF
50 mA/div
VOUT
VIN = 2.8 V
VOUT = 1.8 V
IOUT = 0 mA
COUT = 1 mF, 4.7 mF
1 V/div
500 mV/div
VEN
1 V/div
TYPICAL CHARACTERISTICS
Short−Circuit
Current
Overheating
IOUT
VOUT
VIN = 5.25 V
VOUT = 3.3 V
CIN = COUT = 1 mF
Thermal Shutdown
TSD Cycling
Short−Circuit
Event
20 ms/div
10 ms/div
Figure 50. Turn−on/off − Slow Rising VIN
Figure 51. Short−Circuit and Thermal
Shutdown
www.onsemi.com
13
NCV8154
General
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCV8154 regulates the output voltage and
the active discharge transistor is turned−off.
The both EN pin has internal pull−down current source
with typ. value of 300 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
The NCV8154 is a dual output high performance 300 mA
Low Dropout Linear Regulator. This device delivers very
high PSRR (75 dB at 1 kHz) and excellent dynamic
performance as load/line transients. In connection with low
quiescent current this device is very suitable for various
battery powered applications such as tablets, cellular phones,
wireless and many others. Each output is fully protected in
case of output overload, output short circuit condition and
overheating, assuring a very robust design. The NCV8154
device is housed in DFN10 3 x3 mm package which is
useful for space constrains application.
Output Current Limit
Output Current is internally limited within the IC to a
typical 400 mA. The NCV8154 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 520 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration. This protection
works separately for each channel. Short circuit on the one
channel do not influence second channel which will work
according to specification.
Input Capacitor Selection (CIN)
It is recommended to connect at least a 1 mF Ceramic X5R
or X7R capacitor as close as possible to the IN pin of the
device. This capacitor will provide a low impedance path for
unwanted AC signals or noise modulated onto constant
input voltage. There is no requirement for the min. or max.
ESR of the input capacitor but it is recommended to use
ceramic capacitors for their low ESR and ESL. A good input
capacitor will limit the influence of input trace inductance
and source resistance during sudden load current changes.
Larger input capacitor may be necessary if fast and large
load transients are encountered in the application.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the affected channel is turn−off. Second
channel still working. The channel which is overheated will
remain in this state until the die temperature decreases below
the Thermal Shutdown Reset threshold (TSDU − 140°C
typical). Once the device temperature falls below the 140°C
the appropriate channel is enabled again. The thermal
shutdown feature provides the protection from a
catastrophic device failure due to accidental overheating.
This protection is not intended to be used as a substitute for
proper heat sinking. The long duration of the short circuit
condition to some output channel could cause turn−off other
output when heat sinking is not enough and temperature of
the other output reach TSD temperature.
Output Decoupling (COUT)
The NCV8154 requires an output capacitor for each
output connected as close as possible to the output pin of the
regulator. The recommended capacitor value is 1 mF and
X7R or X5R dielectric due to its low capacitance variations
over the specified temperature range. The NCV8154 is
designed to remain stable with minimum effective
capacitance of 0.33 mF to account for changes with
temperature, DC bias and package size. Especially for small
package size capacitors such as 0201 the effective
capacitance drops rapidly with the applied DC bias.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 3 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
Power Dissipation
As power dissipated in the NCV8154 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part. For reliable operation, junction temperature
should be limited to +125°C.
The maximum power dissipation the NCV8154 can
handle is given by:
Enable Operation
The NCV8154 uses the dedicated EN pin for each output
channel. This feature allows driving outputs separately.
If the EN pin voltage is VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
Power Supply Rejection Ratio
To obtain good transient performance and good regulation
characteristics place input and output capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 2). Expose
pad should be tied the shortest path to the GND pin.
PCB Layout Recommendations
The NCV8154 features very good Power Supply
Rejection ratio. If desired the PSRR at higher frequencies in
the range 100 kHz – 10 MHz can be tuned by the selection
of COUT capacitor and proper PCB layout.
www.onsemi.com
15
NCV8154
Table 6. ORDERING INFORMATION
Device
Marking
Voltage Option
(OUT1/OUT2)
NCV8154MW120180TBG
8154W
1218
1.2 V / 1.8 V
NCV8154MW120280TBG
8154W
1228
1.2 V / 2.8 V
NCV8154MW150180TBG
8154W
1518
1.5 V / 1.8 V
NCV8154MW150330TBG
8154W
1533
1.5 V / 3.3 V
NCV8154MW180250TBG
8154W
1825
1.8 V / 2.5 V
NCV8154MW180280TBG
8154W
1828
1.8 V / 2.8 V
NCV8154MW280120TBG
8154W
2812
2.8 V / 1.2 V
NCV8154MN300300TBG
8154N
3030
NCV8154MW300300TBG
8154W
3030
NCV8154MN330180TBG
8154N
3318
NCV8154MW330180TBG
8154W
3318
NCV8154MW330280TBG
8154W
3328
3.3 V / 2.8 V
NCV8154MW330330TBG
8154W
3333
3.3 V / 3.3 V
NCV8154MTW180280TCG
DA
Active
Discharge
Features
Package
Shipping†
DFN10
(Pb-Free)
3000 / Tape &
Reel
WDFN6
(Pb-Free)
3000 / Tape &
Reel
Yes
Yes
Yes
Yes
Wettable Flank
Yes
Yes
Yes
Yes
Non−wettable
Flank
Yes
Wettable Flank
Yes
Non−wettable
Flank
Yes
Wettable Flank
3.0 V / 3.0 V
3.3 V / 1.8 V
Yes
Wettable Flank
Yes
1.8 V / 2.8 V
No
Wettable Flank
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Bluetooth is a registered trademark of Bluetooth SIG.
ZigBee is a registered trademark of ZigBee Alliance.
www.onsemi.com
16
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN10, 3x3, 0.5P
CASE 485C
ISSUE F
SCALE 2:1
DATE 16 DEC 2021
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
ALYWG
G
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
*This information is generic. Please refer to
Y
= Year
device data sheet for actual part marking.
W
= Work Week
Pb−Free indicator, “G” or microdot “G”, may
G
= Pb−Free Package
or may not be present. Some products may
(Note: Microdot may be in either location) not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON03161D
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DFN10, 3X3 MM, 0.5 MM PITCH
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 1.5x1.5, 0.5P
CASE 511BJ
ISSUE C
DATE 06 OCT 2015
SCALE 4:1
D
L
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30mm FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L1
DETAIL A
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
ALTERNATE TERMINAL
CONSTRUCTIONS
E
PIN ONE
REFERENCE
ÉÉÉ
ÉÉÉ
EXPOSED Cu
0.10 C
2X
2X
0.10 C
0.05 C
TOP VIEW
DETAIL B
A3
MOLD CMPD
ÉÉ
ÉÉ
ÇÇ
DIM
A
A1
A3
b
D
E
e
L
L1
L2
A3
A1
DETAIL B
ALTERNATE
CONSTRUCTIONS
GENERIC
MARKING DIAGRAM*
A
0.05 C
1
A1
NOTE 4
C
SIDE VIEW
DETAIL A
e
1
SEATING
PLANE
XXM
G
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
5X
L
3
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.20
0.30
1.50 BSC
1.50 BSC
0.50 BSC
0.40
0.60
--0.15
0.50
0.70
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
L2
RECOMMENDED
MOUNTING FOOTPRINT*
6
4
6X
b
0.10 C A
BOTTOM VIEW
0.05 C
B
6X
0.35
5X
0.73
NOTE 3
1.80
0.83
0.50
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON50296E
WDFN6, 1.5 X 1.5, 0.5 P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
