NCV8160
LDO Regulator - Ultra-Low
Noise, High PSRR, RF and
Analog Circuits
250 mA
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The NCV8160 is a linear regulator capable of supplying 250 mA
output current. Designed to meet the requirements of RF and analog
circuits, the NCV8160 device provides low noise, high PSRR, low
quiescent current, and very good load/line transients. The device is
designed to work with a 1 mF input and a 1 mF output ceramic
capacitor. It is available in XDFN−4 0.65P, 1 mm x 1 mm.
MARKING
DIAGRAM
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
XDFN4
CASE 711AJ
Operating Input Voltage Range: 1.9 V to 5.5 V
Available in Fixed Voltage Option: 1.8 V to 5.14 V
±2% Accuracy Over Temperature
Ultra Low Quiescent Current Typ. 18 mA
Standby Current: Typ. 0.1 mA
Very Low Dropout: 90 mV at 250 mA
Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz
Ultra Low Noise: 10 mVRMS
Stable with a 1 mF Small Case Size Ceramic Capacitors
Available in XDFN4 1 mm x 1 mm x 0.4 mm
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; Grade 1 AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
XX
M
XX M
1
= Specific Device Code
= Date Code
PIN CONNECTIONS
IN
EN
3
4
EPAD
1
2
OUT
GND
(Top View)
ORDERING INFORMATION
Typical Applications
See detailed ordering, marking and shipping information on
page 13 of this data sheet.
• ADAS, Infotainment & Cluster, and Telematics
• General Purpose Automotive & Industrial
• Building & Factory Automation, Smart Meters
VOUT
VIN
IN
OUT
NCV8160
CIN
1 mF
Ceramic
EN
COUT
1 mF
Ceramic
ON
OFF
GND
Figure 1. Typical Application Schematics
© Semiconductor Components Industries, LLC, 2016
September, 2019 − Rev. 2
1
Publication Order Number:
NCV8160/D
NCV8160
IN
EN
ENABLE
THERMAL
LOGIC
SHUTDOWN
BANDGAP
MOSFET
REFERENCE
INTEGRATED
DRIVER WITH
SOFT−START
CURRENT LIMIT
OUT
* ACTIVE DISCHARGE
Version A only
EN
GND
Figure 2. Simplified Schematic Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
1
OUT
Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor.
2
GND
Common ground connection
3
EN
Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO.
4
IN
Input voltage supply pin
EPAD
EPAD
Expose pad can be tied to ground plane for better power dissipation
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2
NCV8160
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VIN
−0.3 V to 6
V
Output Voltage
VOUT
−0.3 to VIN + 0.3, max. 6 V
V
Chip Enable Input
VCE
−0.3 to VIN + 0.3, max. 6 V
V
Output Short Circuit Duration
tSC
unlimited
s
Operating Ambient Temperature Range
TA
−40 to +125
°C
Input Voltage (Note 1)
Maximum Junction Temperature
TJ
150
°C
TSTG
−55 to 150
°C
ESD Capability, Human Body Model (Note 2)
ESDHBM
2000
V
ESD Capability, Machine Model (Note 2)
ESDMM
200
V
Storage Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating
Thermal Characteristics, XDFN4 (Note 3)
Thermal Resistance, Junction−to−Air
Symbol
Value
Unit
RqJA
198.1
°C/W
3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
1.9
5.5
V
Junction Temperature
TJ
−40
125
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
NCV8160
ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise
noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4).
Parameter
Test Conditions
Operating Input Voltage
Output Voltage Accuracy
−40°C ≤ TJ ≤ 125°C
Symbol
Min
VIN
VOUT
Typ
Max
Unit
1.9
5.5
V
−2
+2
%
%/mA
Line Regulation
VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V
LineReg
0.02
Load Regulation
IOUT = 1 mA to 250 mA
LoadReg
0.001
0.005
VOUT(NOM) = 1.8 V
190
250
VOUT(NOM) = 2.5 V
120
175
105
160
VOUT(NOM) = 3.0 V
100
155
VOUT(NOM) = 3.3 V
90
145
Dropout Voltage (Note 5)
VOUT(NOM) = 2.8 V
IOUT = 250 mA
VDO
VOUT = 90% VOUT(NOM)
ICL
Short Circuit Current
VOUT = 0 V
ISC
690
Quiescent Current
IOUT = 0 mA
IQ
18
23
mA
Shutdown Current
VEN ≤ 0.4 V, VIN = 4.8 V
IDIS
0.01
1
mA
EN Input Voltage “H”
VENH
EN Input Voltage “L”
VENL
VEN = 4.8 V
IEN
EN Pull Down Current
Turn−On Time
Power Supply Rejection Ratio
Output Voltage Noise
Thermal Shutdown Threshold
Active Output Discharge Resistance
Line Transient (Note 6)
0.4
0.2
0.5
V
mA
120
ms
f = 100 Hz
f = 1 kHz
f = 10 kHz
f = 100 kHz
PSRR
91
98
82
48
dB
IOUT = 1 mA
IOUT = 250 mA
VN
14
10
mVRMS
Temperature rising
TSDH
160
°C
Temperature falling
TSDL
140
°C
VEN < 0.4 V, Version A only
RDIS
280
W
f = 10 Hz to 100 kHz
VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) +
1.6 V) in 30 ms, IOUT = 1 mA
VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) +
1 V) in 30 ms, IOUT = 1 mA
Load Transient (Note 6)
mA
1.2
COUT = 1 mF, From assertion of VEN to
VOUT = 95% VOUT(NOM)
IOUT = 20 mA
700
mV
Output Current Limit
EN Pin Threshold Voltage
250
%/V
IOUT = 1 mA to 200 mA in 10 ms
IOUT = 200 mA to 1mA in 10 ms
−1
TranLINE
mV
+1
TranLOAD
−40
+40
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C.
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM).
6. Guaranteed by design.
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NCV8160
TYPICAL CHARACTERISTICS
3.33
1.820
1.815
VOUT, OUTPUT VOLTAGE (V)
VOUT, OUTPUT VOLTAGE (V)
IOUT = 10 mA
1.810
1.805
IOUT = 250 mA
1.800
1.795
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
1.790
1.785
1.780
−40 −20
0
20
40
60
80
100
120
IOUT = 10 mA
3.30
3.29
IOUT = 250 mA
3.28
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
3.27
3.26
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Output Voltage vs. Temperature −
VOUT = 1.8 V − XDFN Package
Figure 4. Output Voltage vs. Temperature −
VOUT = 3.3 V − XDFN Package
REGLINE, LINE REGULATION (%/V)
0.010
0.009
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.009
0.008
0.008
0.007
0.007
0.006
0.006
0.005
0.005
0.004
0.004
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.003
0.002
0.001
0
−40 −20
0
20
40
60
80
100
0.003
0.002
0.001
0
−40 −20
120 140
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Line Regulation vs. Temperature −
VOUT = 1.8 V
Figure 6. Line Regulation vs. Temperature −
VOUT = 3.3 V
0.0020
0.0018
0.0016
0.0014
0.0012
0.0010
0.0008
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.0006
0.0004
0.0002
0
−40 −20
0
20
40
60
80
100
120
REGLOAD, LOAD REGULATION (%/mA)
REGLINE, LINE REGULATION (%/V)
3.31
3.25
−40 −20
140
0.010
REGLOAD, LOAD REGULATION (%/mA)
3.32
0.0020
0.0018
0.0016
0.0014
0.0012
0.0010
0.0008
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.0006
0.0004
0.0002
0
140
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Load Regulation vs. Temperature −
VOUT = 1.8 V
Figure 8. Load Regulation vs. Temperature −
VOUT = 3.3 V
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NCV8160
1.50
1.50
1.35
1.35
IGND, GROUND CURRENT (mA)
IGND, GROUND CURRENT (mA)
TYPICAL CHARACTERISTICS
1.20
TJ = 125°C
1.05
TJ = 25°C
0.90
0.75
0.60
TJ = −40°C
0.45
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.30
0.15
0
0
25
50
75
100 125 150 175 200 225 250
0.60
TJ = −40°C
0.45
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.30
0.15
0
0
25
50
100 125 150 175 200
75
225 250
Figure 9. Ground Current vs. Load Current −
VOUT = 1.8 V
Figure 10. Ground Current vs. Load Current −
VOUT = 3.3 V
150
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
TJ = 25°C
0.90
0.75
IOUT, OUTPUT CURRENT (mA)
225
200
TJ = 125°C
175
TJ = 25°C
150
125
100
TJ = −40°C
75
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
50
0
25
50
75
100 125 150 175 200
225 250
135
120
105
90
TJ = 125°C
75
60
TJ = 25°C
45
TJ = −40°C
30
15
0
0
25
50
75
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
100 125 150 175 200 225 250
IOUT, OUTPUT CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
Figure 11. Dropout Voltage vs. Load Current −
VOUT = 1.8 V
Figure 12. Dropout Voltage vs. Load Current −
VOUT = 3.3 V
250
150
VDROP, DROPOUT VOLTAGE (mV)
VDROP, DROPOUT VOLTAGE (mV)
TJ = 125°C
1.05
IOUT, OUTPUT CURRENT (mA)
250
25
0
1.20
225
200
175
IOUT = 250 mA
150
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
125
100
75
IOUT = 0 mA
50
25
0
−40 −20
0
20
40
60
80
100
120 140
135
120
IOUT = 250 mA
105
90
75
60
IOUT = 0 mA
45
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
30
15
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Dropout Voltage vs. Temperature−
VOUT = 1.8 V
Figure 14. Dropout Voltage vs. Temperature−
VOUT = 3.3 V
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NCV8160
TYPICAL CHARACTERISTICS
ISC, SHORT CIRCUIT CURRENT (mA)
750
730
720
710
700
690
680
670
660
650
−40 −20
VEN, ENABLE VOLTAGE THRESHOLD (V)
VIN = 4.3 V
VOUT = 90% VOUT(nom)
CIN = 1 mF
COUT = 1 mF
0
20
40
60
80
100
120
140
690
680
670
660
650
640
620
610
600
−40 −20
0.50
0.45
0.8
OFF −> ON
0.7
0.6
ON −> OFF
0.5
0.4
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.3
0.2
0.1
0
−40 −20
0
20
40
60
80
100
120
140
40
60
80
100
120 140
0.40
0.35
0.30
0.25
0.20
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
0.15
0.10
0.05
0
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 17. Enable Threshold Voltage vs.
Temperature
Figure 18. Enable Current Temperature
RDIS, DISCHARGE RESISTIVITY (W)
70
20
Figure 16. Short Circuit Current vs.
Temperature
0.9
80
0
Figure 15. Current Limit vs. Temperature
1.0
90
VIN = 4.3 V
VOUT = 0 V (Short)
CIN = 1 mF
COUT = 1 mF
630
TJ, JUNCTION TEMPERATURE (°C)
100
IDIS, DISABLE CURRENT (nA)
700
TJ, JUNCTION TEMPERATURE (°C)
IEN, ENABLE PIN CURRENT (mA)
ICL, CURRENT LIMIT (mA)
740
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
60
50
40
30
20
10
0
−40 −20
0
20
40
60
80
100
120 140
300
290
280
270
260
250
240
VIN = 4.3 V
VOUT = 3.3 V
CIN = 1 mF
COUT = 1 mF
230
220
210
200
−40 −20
0
20
40
60
80
100
120 140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Disable Current vs. Temperature
Figure 20. Discharge Resistivity vs.
Temperature
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NCV8160
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE NOISE (nV/√Hz)
10,000
IOUT = 250 mA
1000
IOUT = 10 mA
RMS Output Noise (mV)
IOUT = 1 mA
100
10
1
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
0.01
0.1
1
10
100
IOUT
10 Hz − 100 kHz
100 Hz − 100 kHz
1 mA
14.62
14.10
10 mA
11.12
10.48
250 mA
10.37
9.82
1000
FREQUENCY (kHz)
Figure 21. Output Voltage Noise Spectral Density − VOUT = 1.8 V
120
120
100
RR, RIPPLE REJECTION (dB)
VIN = 2.5 V
VOUT = 1.8 V
COUT = 1 mF
80
60
IOUT = 20 mA
40
20
0
IOUT = 100 mA
IOUT = 250 mA
0.01
0.1
1
10
100
1k
VIN = 3.6 V
VOUT = 3.3 V
COUT = 1 mF
100
80
60
IOUT = 20 mA
40
IOUT = 100 mA
20
0
10k
IOUT = 10 mA
IOUT = 250 mA
0.01
0.1
1
10
100
1k
FREQUENCY (kHz)
FREQUENCY (kHz)
Figure 22. Power Supply Rejection Ratio,
VOUT = 1.8 V
Figure 23. Power Supply Rejection Ratio,
VOUT = 3.3 V
100
Unstable Operation
10
ESR (W)
RR, RIPPLE REJECTION (dB)
IOUT = 10 mA
1
0.1
Stable Operation
0
50
100
150
200
IOUT, OUTPUT CURRENT (mA)
Figure 24. Stability vs. ESR
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250
300
10k
NCV8160
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
200 mA/div
IINPUT
VOUT
500 mV/div
200 mA/div
VEN
VEN
IINPUT
1 V/div
1 V/div
500 mV/div
TYPICAL CHARACTERISTICS
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
100 ms/div
100 ms/div
Figure 25. Enable Turn−on Response −
COUT = 1 mF, IOUT = 10 mA
Figure 26. Enable Turn−on Response −
COUT = 1 mF, IOUT = 250 mA
500 mV/div
10 mV/div
2.3 V
VIN
VOUT
VOUT = 1.8 V, IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
3.8 V
VIN
VOUT
VOUT = 3.3 V, IOUT = 10 mA
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
20 ms/div
20 ms/div
Figure 27. Line Transient Response −
VOUT = 1.8 V
Figure 28. Line Transient Response −
VOUT = 3.3 V
VIN
1 V/div
10 mV/div
500 mV/div
4.8 V
3.3 V
VOUT
VOUT = 2.8 V, CIN = 1 mF (MLCC),
IOUT = 10 mA, COUT = 1 mF (MLCC)
4 ms/div
Figure 29. Turn−on/off − Slow Rising VIN
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NCV8160
100 mA/div
IOUT
tRISE = 1 ms
50 mV/div
50 mV/div
100 mA/div
TYPICAL CHARACTERISTICS
VOUT
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
IOUT
tFALL = 1 ms
VOUT
VIN = 2.8 V, VOUT = 1.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
4 ms/div
20 ms/div
Figure 30. Load Transient Response −
1 mA to 250 mA − VOUT = 1.8 V
Figure 31. Load Transient Response −
250 mA to 1 mA − VOUT = 1.8 V
VOUT
VIN = 4.3 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
VOUT
VIN = 4.3 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
20 ms/div
Figure 32. Load Transient Response −
1 mA to 250 mA − VOUT = 3.3 V
Figure 33. Load Transient Response −
250 mA to 1 mA − VOUT = 3.3 V
TSD Cycling
500 mV/div
500 mA/div
tFALL = 1 ms
4 ms/div
Short Circuit Event
Overheating
1 V/div
100 mA/div
tRISE = 1 ms
50 mV/div
IOUT
VEN
IOUT
VOUT
Thermal Shutdown
VOUT
VIN = 5.5 V, VOUT = 3.3 V
CIN = 1 mF (MLCC)
COUT = 1 mF (MLCC)
COUT = 4.7 mF
1 V/div
50 mV/div
100 mA/div
IOUT
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF (MLCC)
COUT = 1 mF
10 ms/div
400 ms/div
Figure 34. Short Circuit and Thermal
Shutdown
Figure 35. Enable Turn−off
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NCV8160
APPLICATIONS INFORMATION
General
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
The NCV8160 is an ultra−low noise 250 mA low dropout
regulator designed to meet the requirements of RF
applications and high performance analog circuits. The
NCV8160 device provides very high PSRR and excellent
dynamic response. In connection with low quiescent current
this device is well suitable for battery powered application
such as cell phones, tablets and other. The NCV8160 is fully
protected in case of current overload, output short circuit and
overheating.
Enable Operation
Input capacitor connected as close as possible is necessary
for ensure device stability. The X7R or X5R capacitor
should be used for reliable performance over temperature
range. The value of the input capacitor should be 1 mF or
greater to ensure the best dynamic performance. This
capacitor will provide a low impedance path for unwanted
AC signals or noise modulated onto constant input voltage.
There is no requirement for the ESR of the input capacitor
but it is recommended to use ceramic capacitors for their low
ESR and ESL. A good input capacitor will limit the
influence of input trace inductance and source resistance
during sudden load current changes.
The NCV8160 uses the EN pin to enable/disable its device
and to deactivate/activate the active discharge function.
If the EN pin voltage is 1.2 V the device is guaranteed to
be enabled. The NCV8160 regulates the output voltage and
the active discharge transistor is turned−off.
The EN pin has internal pull−down current source with
typ. value of 200 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Output Decoupling (COUT)
Output Current Limit
Input Capacitor Selection (CIN)
The NCV8160 requires an output capacitor connected as
close as possible to the output pin of the regulator. The
recommended capacitor value is 1 mF and X7R or X5R
dielectric due to its low capacitance variations over the
specified temperature range. The NCV8160 is designed to
remain stable with minimum effective capacitance of 0.7 mF
to account for changes with temperature, DC bias and
package size. Especially for small package size capacitors
such as 0201 the effective capacitance drops rapidly with the
applied DC bias. Please refer Figure 36.
Output Current is internally limited within the IC to a
typical 700 mA. The NCP60 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 690 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD * 160°C typical), Thermal Shutdown event
is detected and the device is disabled. The IC will remain in
this state until the die temperature decreases below the
Thermal Shutdown Reset threshold (TSDU − 140°C typical).
Once the IC temperature falls below the 140°C the LDO is
enabled again. The thermal shutdown feature provides the
protection from a catastrophic device failure due to
accidental overheating. This protection is not intended to be
used as a substitute for proper heat sinking.
Power Dissipation
As power dissipated in the NCV8160 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
Figure 36. Capacity vs DC Bias Voltage
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 2 W. Larger
output capacitors and lower ESR could improve the load
www.onsemi.com
11
NCV8160
rise for the part. For reliable operation, junction temperature
should be limited to +125°C.
The maximum power dissipation the NCV8160 can
handle is given by:
P D [ V IN @ I GND ) I OUTǒV IN * V OUTǓ
(eq. 1)
q JA
220
1.0
qJA, 1 oz Cu
210
0.9
200
0.8
qJA, 2 oz Cu
190
PD(MAX), TA = 25°C, 2 oz Cu
PD(MAX), TA = 25°C, 1 oz Cu
180
0.7
0.6
170
0.5
160
0.4
150
0
100
(eq. 2)
200
300
400
PCB COPPER AREA (mm2)
500
600
PD(MAX), MAXIMUM POWER DISSIPATION (W)
qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W)
P D(MAX) +
ƪ125oC * T Aƫ
The power dissipated by the NCV8160 for given
application conditions can be calculated from the following
equations:
0.3
700
Figure 37. qJA and PD (MAX) vs. Copper Area
Reverse Current
Turn−On Time
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
Power Supply Rejection Ratio
To obtain good transient performance and good regulation
characteristics place CIN and COUT capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 or 0201 capacitors with
appropriate capacity. Larger copper area connected to the
pins will also improve the device thermal resistance. The
actual power dissipation can be calculated from the equation
above (Equation 2). Expose pad can be tied to the GND pin
for improvement power dissipation and lower device
temperature.
PCB Layout Recommendations
The NCV8160 features very high Power Supply
Rejection ratio. If desired the PSRR at higher frequencies in
the range 100 kHz – 10 MHz can be tuned by the selection
of COUT capacitor and proper PCB layout.
www.onsemi.com
12
NCV8160
ORDERING INFORMATION
Device
Nominal Output Voltage
Description
NCV8160AMX180TBG
1.8 V
DF
NCV8160AMX250TBG
2.5 V
DG
NCV8160AMX280TBG
2.8 V
DH
NCV8160AMX290TBG
2.9 V
NCV8160AMX300TBG
3.0 V
DK
NCV8160AMX330TBG
3.3 V
DA
NCV8160AMX500TBG
5.0 V
DW
NCV8160BMX180TBG
1.8 V
EF
NCV8160BMX250TBG
2.5 V
EG
NCV8160BMX280TBG
2.8 V
NCV8160BMX300TBG
3.0 V
NCV8160BMX330TBG
3.3 V
EA
NCV8160BMX500TBG
5.0 V
EW
250 mA, Active Discharge
250 mA, Non-Active Discharge
Marking
Package
Shipping†
XDFN4
(Pb-Free)
3000 /
Tape &
Reel
D4
EH
EK
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Bluetooth is a registered trademark of Bluetooth SIG. ZigBee is a registered trademark of ZigBee Alliance.
www.onsemi.com
13
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
XDFN4 1.0x1.0, 0.65P
CASE 711AJ
ISSUE B
1
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XX M
1
DOCUMENT NUMBER:
DESCRIPTION:
XX = Specific Device Code
M = Date Code
98AON67179E
XDFN4, 1.0X1.0, 0.65P
DATE 25 JUN 2021
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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