NCV8163ASN280T1G

NCV8163 250 mA, Ultra-Low Noise and High PSRR LDO Regulator for RF and Analog Circuits The NCV8163 is a next generation of high PSRR, ultra−low noise LDO capable of supplying 250 mA output current. Designed to meet the requirements of RF and sensitive analog circuits, the NCV8163 device provides ultra−low noise, high PSRR and low quiescent current. The device also offer excellent load/line transients. The NCV8163 is designed to work with a 1 mF input and a 1 mF output ceramic capacitor. It is available in XDFN4 0.65P, 1 mm x 1 mm and TSOP−5 packages. www.onsemi.com MARKING DIAGRAMS 5 XXXAYWG G TSOP−5 CASE 483 5 1 1 Features • • • • • • • • • • • • Operating Input Voltage Range: 2.2 V to 5.5 V Available in Fixed Voltage Option: 1.2 V to 5.3 V ±2% Accuracy Over Load/Temperature Ultra Low Quiescent Current Typ. 12 mA Standby Current: Typ. 0.1 mA Very Low Dropout: 80 mV at 250 mA @ 3.3 V Ultra High PSRR: Typ. 92 dB at 20 mA, f = 1 kHz Ultra Low Noise: 6.5 mVRMS Stable with a 1 mF Small Case Size Ceramic Capacitors Available in XDFN4 1 mm x 1 mm x 0.4 mm and TSOP−5 Packages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; Grade 1 AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • ADAS, Infotainment & Cluster, and Telematics • General Purpose Automotive & Industrial • Building & Factory Automation, Smart Meters IN 1 XDFN4 CASE 711AJ XX = Specific Device Code M = Date Code PIN CONNECTIONS IN 1 GND 2 EN 3 OUT 4 NC EN 4 3 OUT EN ON OFF 5 IN NCV8163 CIN 1 mF Ceramic XX M 1 (Top View) VOUT VIN XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) GND EPAD COUT 1 mF Ceramic 1 OUT Figure 1. Typical Application Schematics 2 GND (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 14 of this data sheet. © Semiconductor Components Industries, LLC, 2017 November, 2018 − Rev. 3 1 Publication Order Number: NCV8163/D NCV8163 IN EN ENABLE THERMAL LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE INTEGRATED DRIVER WITH SOFT−START CURRENT LIMIT OUT * ACTIVE DISCHARGE Version A only EN GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. TSOP−5 Pin No. XDFN4 Pin Name 1 4 IN 5 1 OUT 3 3 EN 2 2 GND Common ground connection 4 − N/C Not connected. This pin can be tied to ground to improve thermal dissipation. − EP EPAD Description Input voltage supply pin Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor. Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO. Exposed Pad. Exposed pad can be tied to ground plane for better power dissipation. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 V to 6 V Output Voltage VOUT −0.3 to VIN + 0.3, max. 6 V V Chip Enable Input VCE −0.3 to 6 V V Output Short Circuit Duration tSC unlimited s Operating Ambient Temperature Range TA −40 to +125 °C Input Voltage (Note 1) Maximum Junction Temperature TJ 150 °C TSTG −55 to +150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V ESD Capability, Charged Device Model (Note 2) ESDCDM 1000 V Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 ESD Charged Device Model tested per EIA/JESD22−C101, Field Induced Charge Model Latchup Current Maximum Rating tested per JEDEC standard: JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Min Max Unit Input Voltage Rating VIN 2.2 5.5 V Junction Temperature TJ −40 +125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCV8163 THERMAL CHARACTERISTICS Symbol Value Unit Thermal Characteristics, XDFN4 (Note 3), Thermal Resistance, Junction−to−Air Rating RqJA 198.1 °C/W Thermal Characteristics, TSOP−5 (Note 3), Thermal Resistance, Junction−to−Air RqJA 218 °C/W 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51−7 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 1.2 V. Typical values are at TJ = +25°C (Note 4). Parameter Test Conditions Symbol Min Max Unit VIN 2.2 5.5 V VIN = (VOUT(NOM) + 1 V) to 5.5 V VOUT −2 +2 % VIN = (VOUT(NOM) + 1 V) to 5.5 V (for VOUT < 1.8 V) VOUT −3 +3 % %/mA Operating Input Voltage Output Voltage Accuracy Line Regulation Load Regulation Dropout Voltage (Note 5) VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V IOUT = 1 mA to 250 mA IOUT = 250 mA XDFN4 package XDFN4 LineReg 0.02 LoadReg 0.001 0.005 0.008 0.015 TSOP−5 VOUT(NOM) = 1.8 V VDO Output Current Limit IOUT = 250 mA TSOP−5 package %/V 180 250 VOUT(NOM) = 2.8 V 95 160 VOUT(NOM) = 3.0 V 90 155 VOUT(NOM) = 3.3 V Dropout Voltage (Note 5) Typ 80 145 205 280 VOUT(NOM) = 2.8 V 120 190 VOUT(NOM) = 3.0 V 115 185 VOUT(NOM) = 3.3 V 105 175 VOUT(NOM) = 1.8 V VDO mV mA VOUT = 90% VOUT(NOM) ICL Short Circuit Current VOUT = 0 V ISC 690 Quiescent Current IOUT = 0 mA IQ 12 20 mA Shutdown Current VEN ≤ 0.4 V, VIN = 4.8 V IDIS 0.01 1 mA EN Input Voltage “H” VENH EN Input Voltage “L” VENL VEN = 4.8 V IEN EN Pin Threshold Voltage EN Pull Down Current Turn−On Time Power Supply Rejection Ratio Output Voltage Noise Thermal Shutdown Threshold Active Output Discharge Resistance Line Transient (Note 6) 250 mV V 1.2 0.4 0.2 COUT = 1 mF, From assertion of VEN to VOUT = 95% VOUT(NOM) 0.5 mA 120 ms IOUT = 20 mA f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz PSRR 91 92 85 60 dB f = 10 Hz to 100 kHz IOUT = 1 mA IOUT = 250 mA VN 8.0 6.5 mVRMS Temperature rising TSDH 160 °C °C Temperature falling TSDL 140 VEN < 0.4 V, Version A only RDIS 280 VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) + 1.6 V) in 30 ms, IOUT = 1 mA TranLINE IOUT = 1 mA to 200 mA in 10 ms IOUT = 200 mA to 1 mA in 10 ms W mV −1 VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) + 1 V) in 30 ms, IOUT = 1 mA Load Transient (Note 6) 700 +1 TranLOAD mV −40 +40 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM). 6. Guaranteed by design. www.onsemi.com 3 NCV8163 TYPICAL CHARACTERISTICS 3.330 VOUT, OUTPUT VOLTAGE (V) 3.335 1.825 VOUT, OUTPUT VOLTAGE (V) 1.830 1.820 1.815 IOUT = 10 mA 1.810 1.805 IOUT = 250 mA 1.800 1.795 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 1.790 1.785 1.780 −40 −20 0 20 40 60 80 100 120 140 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 3.300 3.295 3.290 3.285 −40 −20 0 20 40 60 80 100 120 140 0.05 5.025 IOUT = 10 mA 5.020 5.015 IOUT = 250 mA 5.010 5.005 VIN = 5.5 V VOUT = 5.0 V CIN = 1 mF COUT = 1 mF 5.000 4.995 0 20 40 60 80 100 120 REGLINE, LINE REGULATION (%/V) VOUT, OUTPUT VOLTAGE (V) 3.305 Figure 4. Output Voltage vs. Temperature − VOUT = 3.3 V − XDFN Package 4.990 −40 −20 140 0.04 0.03 0.02 0.01 0 −0.01 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF −0.02 −0.03 −0.04 −0.05 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature − VOUT = 5.0 V − XDFN Package Figure 6. Line Regulation vs. Temperature − VOUT = 1.8 V REGLOAD, LOAD REGULATION (mV) 0.050 REGLINE, LINE REGULATION (%/V) IOUT = 250 mA 3.310 Figure 3. Output Voltage vs. Temperature − VOUT = 1.8 V − XDFN Package 5.030 0.040 0.030 0.020 0.010 0 −0.010 −0.040 IOUT = 10 mA 3.315 TJ, JUNCTION TEMPERATURE (°C) 5.035 −0.030 3.320 TJ, JUNCTION TEMPERATURE (°C) 5.040 −0.020 3.325 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF −0.050 −40 −20 0 20 40 60 80 100 120 140 20 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF IOUT = 1 mA to 250 mA 18 16 14 12 10 8 6 4 2 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Line Regulation vs. Temperature − VOUT = 3.3 V Figure 8. Load Regulation vs. Temperature − VOUT = 1.8 V www.onsemi.com 4 NCV8163 20 REGLOAD, LOAD REGULATION (mV) VIN = 4.3 V 18 V OUT = 3.3 V 16 CIN = 1 mF COUT = 1 mF 14 IOUT = 1 mA to 250 mA 12 10 8 6 4 2 0 −40 −20 0 20 40 60 80 100 120 140 16 14 12 10 8 6 4 2 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Load Regulation vs. Temperature − VOUT = 3.3 V Figure 10. Load Regulation vs. Temperature − VOUT = 5.0 V 1500 1500 1350 1200 TJ = 125°C 1050 TJ = 25°C 900 750 TJ = −40°C 600 450 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 300 150 0 25 50 75 1200 TJ = 125°C 1050 TJ = 25°C 900 750 TJ = −40°C 600 450 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 300 150 0 100 125 150 175 200 225 250 0 25 50 75 100 125 150 175 200 225 250 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 11. Ground Current vs. Load Current − VOUT = 1.8 V Figure 12. Ground Current vs. Load Current − VOUT = 3.3 V 250 VDROP, DROPOUT VOLTAGE (mV) 1500 1350 1200 1050 TJ = 25°C TJ = 125°C 900 750 TJ = −40°C 600 450 VIN = 5.5 V VOUT = 5.0 V CIN = 1 mF COUT = 1 mF 300 150 0 VIN = 5.5 V VOUT = 5.0 V CIN = 1 mF COUT = 1 mF IOUT = 1 mA to 250 mA 18 1350 0 IGND, GROUND CURRENT (mA) 20 TJ, JUNCTION TEMPERATURE (°C) IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) REGLOAD, LOAD REGULATION (mV) TYPICAL CHARACTERISTICS 0 25 50 75 100 125 150 175 200 200 TJ = 125°C TJ = 25°C 175 150 125 TJ = −40°C 100 75 50 25 0 225 250 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 225 0 25 50 75 100 125 150 175 200 225 250 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 13. Ground Current vs. Load Current − VOUT = 5.0 V Figure 14. Dropout Voltage vs. Load Current − VOUT = 1.8 V − XDFN4 Package www.onsemi.com 5 NCV8163 TYPICAL CHARACTERISTICS 150 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 150 135 120 TJ = 125°C 105 TJ = 25°C 90 75 60 TJ = −40°C 45 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 30 15 0 0 25 50 75 100 125 150 175 200 225 250 45 TJ = −40°C 30 15 0 0 25 50 75 VOUT = 5.0 V CIN = 1 mF COUT = 1 mF 100 125 150 175 200 225 250 150 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) TJ = 25°C 60 Figure 16. Dropout Voltage vs. Load Current − VOUT = 5.0 V − XDFN4 Package IOUT = 250 mA 175 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF IOUT = 100 mA 75 50 25 0 −40 −20 IOUT = 10 mA 0 20 40 60 80 100 120 140 135 120 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF IOUT = 250 mA 105 90 75 IOUT = 100 mA 60 IOUT = 10 mA 45 30 15 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 17. Dropout Voltage vs. Temperature − VOUT = 1.8 V − XDFN4 Package Figure 18. Dropout Voltage vs. Temperature − VOUT = 3.3 V − XDFN4 Package 720 100 IOUT = 250 mA 90 80 700 ICL, CURRENT LIMIT (mA) VDROP, DROPOUT VOLTAGE (mV) 75 Figure 15. Dropout Voltage vs. Load Current − VOUT = 3.3 V − XDFN4 Package 200 100 TJ = 125°C 90 IOUT, OUTPUT CURRENT (mA) 225 125 120 105 IOUT, OUTPUT CURRENT (mA) 250 150 135 IOUT = 100 mA 70 60 50 IOUT = 10 mA 40 30 VOUT = 5.0 V CIN = 1 mF COUT = 1 mF 20 10 0 −40 −20 0 20 40 60 80 100 680 660 640 620 600 560 540 520 −40 −20 120 140 VIN = 4.3 V VOUT = 90% VOUT(nom) CIN = 1 mF COUT = 1 mF 580 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 19. Dropout Voltage vs. Temperature − VOUT = 5.0 V − XDFN4 Package Figure 20. Current Limit vs. Temperature www.onsemi.com 6 NCV8163 VEN, ENABLE VOLTAGE THRESHOLD (V) 700 680 660 640 620 600 580 VIN = 4.3 V VOUT = 0 V (SHORT) CIN = 1 mF COUT = 1 mF 560 540 520 500 −40 −20 0 20 40 60 80 100 120 140 0.9 0.8 0.7 0.6 0.4 0.2 0.1 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 22. Enable Thresholds Voltage 0.45 90 0.40 0.35 0.30 0.25 0.20 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.15 0.10 0.05 0 −40 −20 270 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.3 100 280 ON −> OFF 0.5 0.50 290 OFF −> ON TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 80 70 60 50 40 30 20 10 0 −40 −20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 23. Current to Enable Pin vs. Temperature Figure 24. Disable Current vs. Temperature 100 300 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 260 10 Unstable Operation 1 Stable Operation ESR (W) RDIS, DISCHARGE RESISTIVITY (W) 1.0 Figure 21. Short Circuit Current vs. Temperature IDIS, DISABLE CURRENT (nA) IEN, ENABLE PIN CURRENT (mA) ISC, SHORT CIRCUIT CURRENT (mA) TYPICAL CHARACTERISTICS 250 240 230 220 210 200 −40 −20 0 20 40 60 80 100 0.1 120 140 0 50 100 150 200 250 300 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 25. Discharge Resistance vs. Temperature Figure 26. Maximum COUT ESR Value vs. Load Current www.onsemi.com 7 NCV8163 TYPICAL CHARACTERISTICS OUTPUT NOISE (nV/√Hz) 10K 1 mA 10 mA 250 mA 1K 100 10 1 RMS Output Noise (mV) 10 Hz − 100 kHz 100 Hz − 100 kHz IOUT 1 mA 7.73 6.99 10 mA 7.12 6.26 250 mA 7.11 6.33 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 10 100 1K 10K 1M 100K FREQUENCY (Hz) Figure 27. Output Voltage Noise Spectral Density – VOUT = 1.8 V OUTPUT NOISE (nV/√Hz) 10K 1 mA 10 mA 250 mA 1K 100 10 1 RMS Output Noise (mV) 10 Hz − 100 kHz 100 Hz − 100 kHz IOUT 1 mA 7.9 7.07 10 mA 7.19 6.25 250 mA 7.29 6.38 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 10 100 1K 10K 1M 100K FREQUENCY (Hz) Figure 28. Output Voltage Noise Spectral Density – VOUT = 2.8 V 120 VIN = 2.8 V+100mVpp VOUT = 1.8 V COUT = 1 mF MLCC 1206 100 RR, RIPPLE REJECTION (dB) RR, RIPPLE REJECTION (dB) 120 80 60 40 1 mA 10 mA 20 mA 100 mA 250 mA 20 0 10 100 1K 10K 100K 1M 100 80 60 1 mA 10 mA 20 mA 100 mA 250 mA 40 20 0 10M VIN = 4.3 V+100mVpp VOUT = 3.3 V COUT = 1 mF MLCC 1206 10 100 1K 10K 100K 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 29. Power Supply Rejection Ratio − VOUT = 1.8 V Figure 30. Power Supply Rejection Ratio − VOUT = 3.3 V www.onsemi.com 8 10M NCV8163 TYPICAL CHARACTERISTICS RR, RIPPLE REJECTION (dB) 120 100 80 60 1 mA 10 mA 20 mA 100 mA 250 mA 40 20 0 10 100 VIN = 5.5 V+100mVpp VOUT = 5.0 V COUT = 1 mF MLCC 1206 1K 10K 100K 1M 10M FREQUENCY (Hz) 500 mV/div VIN = 4.3 V VOUT = 3.3 V COUT = 1 mF (MLCC) IINPUT 1 V/div VOUT VEN VOUT 200 mA/div VEN IINPUT VIN = 4.3 V VOUT = 3.3 V COUT = 4.7 mF (MLCC) 50 ms/div Figure 33. Enable Turn−on Response − COUT = 4.7 mF, IOUT = 10 mA 500 mV/div 50 ms/div Figure 32. Enable Turn−on Response − COUT = 1 mF, IOUT = 10 mA VOUT VIN = 4.3 V VOUT = 3.3 V COUT = 1 mF (MLCC) IINPUT VEN 1 V/div VEN VOUT 200 mA/div 200 mA/div 1 V/div 500 mV/div 200 mA/div 1 V/div 500 mV/div Figure 31. Power Supply Rejection Ratio − VOUT = 5.0 V IINPUT VIN = 4.3 V VOUT = 3.3 V COUT = 4.7 mF (MLCC) 50 ms/div 50 ms/div Figure 34. Enable Turn−on Response − COUT = 1 mF, IOUT = 250 mA Figure 35. Enable Turn−on Response − COUT = 4.7 mF, IOUT = 250 mA www.onsemi.com 9 NCV8163 TYPICAL CHARACTERISTICS 3.3 V tFALL = 1 ms 500 mV/div 2.3 V VIN VIN tRISE = 1 ms 10 mV/div VOUT = 1.8 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT 2.3 V VOUT = 1.8 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT 2 ms/div 2 ms/div Figure 36. Line Transient Response − IOUT = 10 mA Figure 37. Line Transient Response − IOUT = 10 mA 2.3 V VOUT tRISE = 1 ms VOUT = 1.8 V, IOUT = 250 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 10 mV/div VIN 500 mV/div 3.3 V VIN 3.3 V tFALL = 1 ms 2.3 V VOUT = 1.8 V, IOUT = 250 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT 2 ms/div 2 ms/div Figure 38. Line Transient Response − IOUT = 250 mA Figure 39. Line Transient Response − IOUT = 250 mA IOUT 100 mA/div IOUT tRISE = 1 ms tFALL = 1 ms VIN = 3.8 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 4.7 mF 20 mV/div 20 mV/div 100 mA/div 10 mV/div 500 mV/div 10 mV/div 500 mV/div 3.3 V VOUT COUT = 4.7 mF COUT = 1 mF VOUT COUT = 1 mF VIN = 3.8 V, VOUT = 3.3 V CIN = 1 mF (MLCC) 5 ms/div 10 ms/div Figure 40. Load Transient Response − 1 mA to 250 mA Figure 41. Load Transient Response − 250 mA to 1 mA www.onsemi.com 10 NCV8163 TYPICAL CHARACTERISTICS VIN = 3.8 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 100 mA/div IOUT VIN = 3.8 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) tRISE = 500 ns 20 mV/div 20 mV/div 100 mA/div IOUT VOUT tRISE = 1 ms VOUT tRISE = 1 ms tRISE = 500 ns 5 ms/div 5 ms/div Figure 42. Load Transient Response − 1 mA to 250 mA Figure 43. Load Transient Response − 250 mA to 1 mA 1 V/div VOUT VIN TSD On VOUT TSD Off VIN = 3.8 V VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) IOUT = 10 mA 500 mV/div IOUT 10 ms/div 2 ms/div Figure 44. Overheating Protection − TSD Figure 45. Turn−on/off − Slow Rising VIN VEN 500 mV/div VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) VOUT COUT = 10 mF 1 V/div 100 mA/div VIN = 5.5 V, VOUT = 1.2 V CIN = 1 mF (MLCC), COUT = 1 mF (MLCC) COUT = 4.7 mF COUT = 1 mF 400 ms/div Figure 46. Enable Turn−off − Various Output Capacitors www.onsemi.com 11 NCV8163 APPLICATIONS INFORMATION General transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. The NCV8163 is an ultra−low noise 250 mA low dropout regulator designed to meet the requirements of RF applications and high performance analog circuits. The NCV8163 device provides very high PSRR and excellent dynamic response. In connection with low quiescent current this device is well suitable for battery powered application such as cell phones, tablets and other. The NCV8163 is fully protected in case of current overload, output short circuit and overheating. Enable Operation Input capacitor connected as close as possible is necessary for ensure device stability. The X7R or X5R capacitor should be used for reliable performance over temperature range. The value of the input capacitor should be 1 mF or greater to ensure the best dynamic performance. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. The NCV8163 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is 1.2 V the device is guaranteed to be enabled. The NCV8163 regulates the output voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 200 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. Output Decoupling (COUT) Output Current Limit Input Capacitor Selection (CIN) The NCV8163 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCV8163 is designed to remain stable with minimum effective capacitance of 0.7 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. Please refer Figure 47. Output Current is internally limited within the IC to a typical 700 mA. The NCV8163 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 690 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD − 160°C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the IC temperature falls below the 140°C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Power Dissipation As power dissipated in the NCV8163 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the Figure 47. Capacity vs DC Bias Voltage There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 2 W. Larger output capacitors and lower ESR could improve the load www.onsemi.com 12 NCV8163 ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCV8163 can handle is given by: P D [ V IN @ I GND ) I OUTǒV IN * V OUTǓ (eq. 1) q JA 220 1.0 qJA, 1 oz Cu 0.9 210 200 0.8 qJA, 2 oz Cu 190 0.7 PD(MAX), TA = 25°C, 2 oz Cu 0.6 180 PD(MAX), TA = 25°C, 1 oz Cu 170 0.5 160 0.4 150 0 100 200 300 400 500 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W) P D(MAX) + ƪ125oC * T Aƫ The power dissipated by the NCV8163 for given application conditions can be calculated from the following equations: 0.3 700 PCB COPPER AREA (mm2) 220 0.7 PD(MAX), TA = 25°C, 2 oz Cu 210 0.6 PD(MAX), TA = 25°C, 1 oz Cu 200 0.5 190 0.4 qJA, 1 oz Cu 180 0.3 qJA, 2 oz Cu 170 0.2 160 150 0.1 0 100 200 300 400 500 600 PCB COPPER AREA (mm2) Figure 49. qJA and PD (MAX) vs. Copper Area − TSOP−5 www.onsemi.com 13 0 700 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (°C/W) Figure 48. qJA and PD (MAX) vs. Copper Area − XDFN4 (eq. 2) NCV8163 Reverse Current Turn−On Time The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT, TA. Power Supply Rejection Ratio To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 or 0201 capacitors with appropriate capacity. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad can be tied to the GND pin for improvement power dissipation and lower device temperature. PCB Layout Recommendations The NCV8163 features very high Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz – 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. ORDERING INFORMATION Device Voltage Option Marking NCV8163AMX120TBG 1.2 V ME NCV8163AMX150TBG 1.5 V MV NCV8163AMX180TBG 1.8 V MA NCV8163AMX250TBG 2.5 V MU NCV8163AMX270TBG 2.7 V MX NCV8163AMX280TBG 2.8 V MM NCV8163AMX300TBG 3.0 V MJ NCV8163AMX330TBG 3.3 V MK NCV8163AMX400TBG 4.0 V MY NCV8163BMX280TBG 2.8 V PE NCV8163ASN120T1G 1.2 V MKE NCV8163ASN180T1G 1.8 V KAA NCV8163ASN250T1G 2.5 V KAD NCV8163ASN270T1G 2.7 V KAK NCV8163ASN280T1G 2.8 V KAE NCV8163ASN300T1G 3.0 V KAF NCV8163ASN330T1G 3.3 V KAG NCV8163ASN500T1G 5.0 V KAJ NCV8163BSN180T1G 1.8 V KAC Description Package Shipping† 250 mA, Active Discharge XDFN4 CASE 711AJ (Pb-Free) 3000 / Tape & Reel TSOP−5 CASE 483 (Pb-Free) 3000 / Tape & Reel 250 mA, Non−Active Discharge 250 mA, Active Discharge 250 mA, Non−Active Discharge †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N 5 1 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X NOTE 5 2X DATE 12 AUG 2020 0.20 C A B 0.10 T M 2X 0.20 T 5 B 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H C SIDE VIEW SEATING PLANE END VIEW GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 1.9 0.074 5 5 XXXAYWG G 1 1 Analog 2.4 0.094 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package 1.0 0.039 XXX MG G Discrete/Logic XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ARB18753C TSOP−5 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE B 1 SCALE 4:1 GENERIC MARKING DIAGRAM* XX M 1 DOCUMENT NUMBER: DESCRIPTION: XX = Specific Device Code M = Date Code 98AON67179E XDFN4, 1.0X1.0, 0.65P DATE 25 JUN 2021 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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