NCV833DR2G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Low Noise, Audio Dual Operational Amplifier LM833, NCV833 The LM833 is a standard low−cost monolithic dual general−purpose operational amplifier employing Bipolar technology with innovative high−performance concepts for audio systems applications. With high frequency PNP transistors, the LM833 offers low voltage noise (4.5 nV/ Hz ), 15 MHz gain bandwidth product, 7.0 V/ms slew rate, 0.3 mV input offset voltage with 2.0 mV/°C temperature coefficient of input offset voltage. The LM833 output stage exhibits no dead−band crossover distortion, large output voltage swing, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response. For an improved performance dual/quad version, see the MC33079 family. • MARKING DIAGRAMS 8 1 LM833N A WL YY WW G Low Voltage Noise: 4.5 nV/ ǸHz High Gain Bandwidth Product: 15 MHz High Slew Rate: 7.0 V/ms Low Input Offset Voltage: 0.3 mV Low T.C. of Input Offset Voltage: 2.0 mV/°C Low Distortion: 0.002% Excellent Frequency Stability Dual Supply Operation NCV Prefix for Automotive and Other Applications Requiring Site and Change Controls These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS Rating Supply Voltage (VCC to VEE) Symbol Value Unit VS +36 V Input Differential Voltage Range (Note 1) VIDR 30 V Input Voltage Range (Note 1) VIR ±15 V Output Short Circuit Duration (Note 2) tSC Indefinite Operating Ambient Temperature Range TA −40 to +85 °C Operating Junction Temperature TJ +150 °C Storage Temperature Tstg −60 to +150 °C ESD Protection at any Pin − Human Body Model − Machine Model Maximum Power Dissipation (Notes 2 and 3) Vesd PD V 600 200 February, 2021 − Rev. 7 = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package LM833 ALYW G SOIC−8 D SUFFIX CASE 751 1 1 LM833 A L Y W G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS Output 1 1 2 1 8 VCC 7 Output 2 Inputs 1 3 6 2 500 mW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Either or both input voltages must not exceed the magnitude of VCC or VEE. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded (see power dissipation performance characteristic). 3. Maximum value at TA ≤ 85°C. © Semiconductor Components Industries, LLC, 2011 LM833N AWL YYWWG PDIP−8 N SUFFIX CASE 626 1 Features • • • • • • • • • www.onsemi.com 1 VEE 4 Inputs 2 5 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: LM833/D LM833, NCV833 ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.) Symbol Min Typ Max Unit VIO − 0.3 5.0 mV DVIO/DT − 2.0 − mV/°C Input Offset Current (VCM = 0 V, VO = 0 V) IIO − 10 200 nA Input Bias Current (VCM = 0 V, VO = 0 V) IIB − 300 1000 nA Common Mode Input Voltage Range VICR − −12 +14 −14 +12 − V Large Signal Voltage Gain (RL = 2.0 kW, VO = ±10 V) AVOL 90 110 − dB Output Voltage Swing: RL = 2.0 kW, VID = 1.0 V RL = 2.0 kW, VID = 1.0 V RL = 10 kW, VID = 1.0 V RL = 10 kW, VID = 1.0 V VO+ VO− VO+ VO− 10 − 12 − 13.7 −14.1 13.9 −14.7 − −10 − −12 Common Mode Rejection (Vin = ±12 V) CMR 80 100 − Power Supply Rejection (VS = 15 V to 5.0 V, −15 V to −5.0 V) PSR 80 115 − dB ID − 4.0 8.0 mA Characteristic Input Offset Voltage (RS = 10 W, VO = 0 V) Average Temperature Coefficient of Input Offset Voltage RS = 10 W, VO = 0 V, TA = Tlow to Thigh Power Supply Current (VO = 0 V, Both Amplifiers) V dB AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.) Symbol Min Typ Max Unit SR 5.0 7.0 − V/ms GBW 10 15 − MHz Unity Gain Frequency (Open Loop) fU − 9.0 − MHz Unity Gain Phase Margin (Open Loop) qm − 60 − Equivalent Input Noise Voltage (RS = 100 W, f = 1.0 kHz) en − 4.5 − nVń ǸHz Equivalent Input Noise Current (f = 1.0 kHz) in − 0.5 − pAń ǸHz Power Bandwidth (VO = 27 Vpp, RL = 2.0 kW, THD ≤ 1.0%) BWP − 120 − kHz Distortion (RL = 2.0 kW, f = 20 Hz to 20 kHz, VO = 3.0 Vrms, AV = +1.0) THD − 0.002 − % CS − −120 − dB Characteristic Slew Rate (Vin = −10 V to +10 V, RL = 2.0 kW, AV = +1.0) Gain Bandwidth Product (f = 100 kHz) 1000 800 IIB , INPUT BIAS CURRENT (nA) PD , MAXIMUM POWER DISSIPATION (mW) Channel Separation (f = 20 Hz to 20 kHz) 600 400 200 0 -50 ° 0 50 100 VCC = +15 V VEE = -15 V VCM = 0 V 800 600 400 200 0 -55 150 -25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 1. Maximum Power Dissipation versus Temperature Figure 2. Input Bias Current versus Temperature www.onsemi.com 2 LM833, NCV833 10 TA = 25°C IS , SUPPLY CURRENT (mA) I IB , INPUT BIAS CURRENT (nA) 800 600 400 200 0 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) VCC 8.0 6.0 VO + VEE 4.0 2.0 0 20 RL = ∞ TA = 25°C IS 0 5.0 Figure 3. Input Bias Current versus Supply Voltage 110 VCC = +15 V VEE = -15 V RL = 2.0 kW 105 100 95 90 -55 -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 RL = 2.0 kW TA = 25°C 100 90 80 125 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 100 45 80 Phase 40 20 VCC = +15 V VEE = -15 V RL = 2.0 kW TA = 25°C Gain 135 0 1.0 10 100 1.0 k 10 k 100 k f, FREQUENCY (Hz) 90 1.0 M 180 10 M GBW, GAIN BANDWIDTH PRODUCT (MHz) 0 60 20 Figure 6. DC Voltage Gain versus Supply Voltage ∅ , EXCESS PHASE (DEGREES) AVOL, OPEN LOOP VOLTAGE GAIN (dB) Figure 5. DC Voltage Gain versus Temperature 120 20 Figure 4. Supply Current versus Supply Voltage AVOL, DC VOLTAGE GAIN (dB) AVOL, DC VOLTAGE GAIN (dB) 110 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 20 15 10 5.0 0 -55 Figure 7. Open Loop Voltage Gain and Phase versus Frequency VCC = +15 V VEE = -15 V f = 100 kHz -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 Figure 8. Gain Bandwidth Product versus Temperature www.onsemi.com 3 125 LM833, NCV833 GBW, GAIN BANDWIDTH PRODUCT (MHz) 30 10 SR, SLEW RATE (V/ μs) f = 100 kHz TA = 25°C 20 10 0 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 8.0 Falling Rising 6.0 VCC = +15 V VEE = -15 V RL = 2.0 kW AV = +1.0 4.0 2.0 -55 20 Figure 9. Gain Bandwidth Product versus Supply Voltage SR, SLEW RATE (V/ μ s) 8.0 RL = 2.0k W AV = +1.0 TA = 25°C Falling 4.0 + Vin 2.0 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) VO RL 100 125 35 Rising 6.0 + Figure 10. Slew Rate versus Temperature VO, OUTPUT VOLTAGE (Vpp ) 10 -25 Vin VO RL 30 25 20 VCC = +15 V VEE = -15 V RL = 2.0 kW THD v 1.0% TA = 25°C 15 10 5.0 0 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 0 20 10 VO, OUTPUT VOLTAGE (Vpp ) 20 15 RL = 10 kW TA = 25°C VO + 10 5.0 0 -5.0 -10 VO - -15 -20 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 1.0 k 10 k 100 k f, FREQUENCY (Hz) 1M 10 M Figure 12. Output Voltage versus Frequency V sat , OUTPUT SATURATION VOLTAGE |V| Figure 11. Slew Rate versus Supply Voltage 100 20 15 +Vsat -Vsat 14 VCC = +15 V VEE = -15 V RL = 10 kW 13 -55 Figure 13. Maximum Output Voltage versus Supply Voltage -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 Figure 14. Output Saturation Voltage versus Temperature www.onsemi.com 4 125 PSR, POWER SUPPLY REJECTION (dB) 140 VCC = +15 V VEE = -15 V TA = 25°C 120 100 80 CMR, COMMON MODE REJECTION (dB) LM833, NCV833 DVCC - ADM DVO + DVEE -PSR +PSR 60 40 20 +PSR = 20 Log -PSR = 20 Log 0 100 1.0 k DVO/ADM ( DVCC ) ( DVDVO/AEEDM ) 10 k 100 k f, FREQUENCY (Hz) 1.0 M 160 DVCM 140 + CMR = 20 Log 100 80 VCC = +15 V VEE = -15 V VCM = 0 V DVCM = ±1.5 V TA = 25°C 60 40 20 100 10 M - + VCC = +15 V VEE = -15 V RL = 2.0 kW TA = 25°C VO RL 0.01 10 M VO = 1.0 Vrms VO = 3.0 Vrms 100 1.0 k 10 k VCC = +15 V VEE = -15 V RS = 100 W TA = 25°C 2.0 1.0 100 k 10 Figure 17. Total Harmonic Distortion versus Frequency 100 2.0 100 VCC = +15 V VEE = -15 V TA = 25°C 1.0 0.7 0.5 0.4 0.3 100 1.0 k f, FREQUENCY (Hz) 10 k 1.0 k f, FREQUENCY (Hz) 10 k 100 k Figure 18. Input Referred Noise Voltage versus Frequency e n, INPUT NOISE VOLTAGE (nV/√ Hz ) i n , INPUT NOISE CURRENT (pA/√ Hz ) 1.0 M 5.0 f, FREQUENCY (Hz) 0.2 10 10 k 100 k f, FREQUENCY (Hz) 10 e n, INPUT NOISE VOLTAGE (nV/√ Hz ) THD, TOTAL HARMONIC DISTORTION (%) 1.0 k Figure 16. Common Mode Rejection versus Frequency 1.0 0.001 10 DVO DVCM × ADM DV0 120 Figure 15. Power Supply Rejection versus Frequency 0.1 - ADM VCC = +15 V VEE = -15 V Vn(total) = (inRS)2 +en2 + Ǹ 4KTRS TA = 25°C 10 1.0 1.0 100 k 10 100 1.0 k 10 k 100 k RS, SOURCE RESISTANCE (W) Figure 19. Input Referred Noise Current versus Frequency Figure 20. Input Referred Noise Voltage versus Source Resistance www.onsemi.com 5 1.0 M VCC = +15 V VEE = -15 V RL = 2.0 kW CL = 0 pF AV = -1.0 TA = 25°C VO , OUTPUT VOLTAGE (5.0 V/DIV) VO , OUTPUT VOLTAGE (5.0 V/DIV) LM833, NCV833 VCC = +15 V VEE = -15 V RL = 2.0 kW CL = 0 pF AV = +1.0 TA = 25°C t, TIME (2.0 ms/DIV) t, TIME (2.0 ms/DIV) VO , OUTPUT VOLTAGE (10 mV/DIV) Figure 21. Inverting Amplifier Figure 22. Noninverting Amplifier Slew Rate VCC = +15 V VEE = -15 V RL = 2.0 kW CL = 0 pF AV = +1.0 TA = 25°C t, TIME (200 ns/DIV) Figure 23. Noninverting Amplifier Overshoot ORDERING INFORMATION Package Shipping† LM833NG PDIP−8 (Pb−Free) 50 Units / Rail LM833DG SOIC−8 (Pb−Free) 98 Units / Rail LM833DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel NCV833DR2G* SOIC−8 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV prefix indicates qualified for automotive use. www.onsemi.com 6 LM833, NCV833 PACKAGE DIMENSIONS PDIP−8 N SUFFIX CASE 626−05 ISSUE M D A E H 8 5 E1 1 4 NOTE 8 b2 c B END VIEW TOP VIEW WITH LEADS CONSTRAINED NOTE 5 A2 A e/2 NOTE 3 L SEATING PLANE A1 C D1 M e 8X SIDE VIEW b 0.010 eB END VIEW M C A M B M NOTE 6 www.onsemi.com 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACKAGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE LEADS UNCONSTRAINED. 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE LEADS, WHERE THE LEADS EXIT THE BODY. 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE CORNERS). DIM A A1 A2 b b2 C D D1 E E1 e eB L M INCHES MIN MAX −−−− 0.210 0.015 −−−− 0.115 0.195 0.014 0.022 0.060 TYP 0.008 0.014 0.355 0.400 0.005 −−−− 0.300 0.325 0.240 0.280 0.100 BSC −−−− 0.430 0.115 0.150 −−−− 10 ° MILLIMETERS MIN MAX −−− 5.33 0.38 −−− 2.92 4.95 0.35 0.56 1.52 TYP 0.20 0.36 9.02 10.16 0.13 −−− 7.62 8.26 6.10 7.11 2.54 BSC −−− 10.92 2.92 3.81 −−− 10 ° LM833, NCV833 PACKAGE DIMENSIONS SOIC−8 D SUFFIX CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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