NCV8402ASTT1G

NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. www.onsemi.com V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 165 mW @ 10 V 2.0 A* Features • • • • • • • • • • Short−Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection NCV8402AMNWT1G − Wettable Flanks Product dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant *Max current limit value is dependent on input condition. MARKING DIAGRAMS DRAIN 4 4 1 2 SOT−223 CASE 318E STYLE 3 3 AYW xxxxx G G 1 2 3 SOURCE GATE DRAIN 1 xxxxx AYWW G 1 xxxxx AYWW G DFN6 CASE 506AX 1 Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial DFN6 (WF) CASE 506DK 1 A = Assembly Location Y = Year W or WW = Work Week xxxxx = V8402 or 8402A G = Pb−Free Package Drain Gate Input Overvoltage Protection (Note: Microdot may be in either location) ESD Protection Temperature Limit DFN6 PACKAGE PIN DESCRIPTION Current Limit G NC NC 1 2 3 Current Sense 7 EPAD Source 6 S 5 S 4 S Pin # Symbol Description 1 2 3 4 5 6 7 G NC NC S* S* S* EPAD Gate Input No Connect No Connect Source Source Source Drain *Pins 4, 5, 6 are internally shorted together. It is recommended to short these pins externally. ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. © Semiconductor Components Industries, LLC, 2016 September, 2018 − Rev. 24 1 Publication Order Number: NCV8402/D NCV8402, NCV8402A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Gate−to−Source Voltage Continuous Drain Current Symbol Value Unit VDSS 42 V VDGR 42 V VGS "14 V ID Internally Limited Total Power Dissipation − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) PD 1.1 1.7 8.9 W Total Power Dissipation − DFN Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) PD 0.76 1.7 8.9 W Maximum Continuous Drain Current − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) ID 2.37 2.98 6.75 A Maximum Continuous Drain Current − DFN Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) ID 1.98 3.02 6.75 A SOT223 Junction−to−Ambient Steady State (Note 1) SOT223 Junction−to−Ambient Steady State (Note 2) SOT223 Junction−to−Soldering Point Steady State RqJA RqJA RqJS 114 72 14 °C/W DFN Junction−to−Ambient Steady State (Note 1) DFN Junction−to−Ambient Steady State (Note 2) DFN Junction−to−Soldering Point Steady State RqJA RqJA RqJS 163 70 14 EAS 150 mJ VLD 55 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Thermal Resistance Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) Load Dump Voltage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). 2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 55 V 40 45 55 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 150°C (Note 5) Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25°C IDSS 0.25 4.0 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 150°C (Note 5) IDSS 1.1 20 mA VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA VGS = VDS, ID = 150 mA VGS(th) 1.8 2.2 V Gate Input Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS = 10 V, ID = 1.7 A, TJ = 25°C Static Drain−to−Source On−Resistance 1.3 VGS(th)/TJ 4.0 RDS(on) −mV/°C 165 200 VGS = 10 V, ID = 1.7 A, TJ = 150°C (Note 5) 305 400 VGS = 5.0 V, ID = 1.7 A, TJ = 25°C 195 230 VGS = 5.0 V, ID = 1.7 A, TJ = 150°C (Note 5) 360 460 VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 190 230 VGS = 5.0 V, ID = 0.5 A, TJ = 150°C (Note 5) 350 460 Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A mW VSD 1.0 V td(on) 25 30 ms Turn−On Rise Time (10% ID to 90% ID) trise 120 200 ms Turn−Off Delay Time (90% VIN to 90% ID) td(off) 20 25 ms SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time (10% VIN to 10% ID) VGS = 10 V, VDD = 12 V, ID = 2.5 A, RL = 4.7 W tfall 50 70 ms Slew−Rate ON (70% to 50% VDD) −dVDS/dtON 0.8 1.2 V/ms Slew−Rate OFF (50% to 70% VDD) dVDS/dtOFF 0.3 0.5 V/ms A Turn−Off Fall Time (90% ID to 10% ID) SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C ILIM 3.7 4.3 5.0 VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Note 5) 2.3 3.0 3.7 VDS = 10 V, VGS = 10 V, TJ = 25°C 4.2 4.8 5.4 VDS = 10 V, VGS = 10 V, TJ = 150°C (Note 5) 2.7 3.6 4.5 150 175 200 Temperature Limit (Turn−off) Thermal Hysteresis Temperature Limit (Turn−off) Thermal Hysteresis VGS = 5.0 V (Note 5) TLIM(off) VGS = 5.0 V DTLIM(on) VGS = 10 V (Note 5) TLIM(off) VGS = 10 V DTLIM(on) VGS = 5 V ID = 1.0 A IGON °C 15 150 165 185 15 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. www.onsemi.com 3 50 mA 400 IGCL 0.05 0.4 mA NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol VGS = 5 V, VDS = 10 V IGTL Min Typ Max Unit GATE INPUT CHARACTERISTICS (Note 5) Thermal Limit Fault Gate Input Current 0.15 VGS = 10 V, VDS = 10 V mA 0.7 ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4000 V 400 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 10 Emax (mJ) IL(max) (A) 1000 TJstart = 25°C 100 TJstart = 25°C TJstart = 150°C TJstart = 150°C 1 10 10 10 100 100 L (mH) L (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 1000 10 1 Emax (mJ) IL(max) (A) TJstart = 25°C TJstart = 150°C 0.1 TJstart = 25°C 100 TJstart = 150°C 10 1 10 TIME IN CLAMP (ms) 1 Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 5 8 8V TA = 25°C 7 10 V VDS = 10 V 6V −40°C 25°C 4 6 100°C 5V 4V 3 ID (A) ID (A) 5 3.5 V 4 3 2 3V 1 VGS = 2.5 V 0 10 TIME IN CLAMP (ms) 150°C 2 1 0 0 1 2 3 4 5 VDS (V) 1 3 VGS (V) Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics www.onsemi.com 5 2 4 5 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 350 400 150°C, VGS = 5 V 150°C, ID = 0.5 A 300 RDS(on) (mW) 200 RDS(on) (mW) 150°C, ID = 1.7 A 300 100°C, ID = 1.7 A 100°C, ID = 0.5 A 25°C, ID = 1.7 A 25°C, ID = 0.5 A 150°C, VGS = 10 V 250 100°C, VGS = 5 V 100°C, VGS = 10 V 200 25°C, VGS = 5 V 150 25°C, VGS = 10 V 100 −40°C, ID = 0.5 A −40°C, ID = 1.7 A 0 4 5 −40°C, VGS = 5 V 100 −40°C, VGS = 10 V 6 7 8 9 50 0.2 10 VGS (V) 0.4 0.6 1 1.2 ID (A) Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current 1.4 1.6 1.8 2 8 2 ID = 1.7 A −40°C 7 1.75 VGS = 5 V 1.5 6 ILIM (A) RDS(on) (NORMIALZIZED) 0.8 1.25 1 25°C 5 100°C 4 VGS = 10 V 150°C 3 0.75 VDS = 10 V 0.5 −40 2 −20 0 20 40 60 T (°C) 80 100 120 140 5 6 7 8 9 10 VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 10 8 VGS = 0 V 7 VGS = 10 V IDSS (mA) 6 ILIM (A) 150°C 1 5 0.1 100°C 0.01 4 25°C VGS = 5 V −40°C 0.001 3 VDS = 10 V 2 −40 −20 0 20 40 60 80 100 120 0.0001 10 140 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current www.onsemi.com 6 40 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 1.1 ID = 150 mA VGS = VDS 1.1 1 1 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 −40°C 0.9 25°C 0.8 100°C 0.7 0.8 150°C 0.7 0.6 0.6 −40 0.5 VGS = 0 V −20 0 20 40 60 80 100 120 1 140 5 6 7 8 9 Figure 15. Source−Drain Diode Forward Characteristics 10 1 ID = 2.5 A VDD = 12 V RG = 0 W 100 td(off) tf 50 tr td(on) 3 4 5 6 7 VGS (V) 8 9 10 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 4 Figure 14. Normalized Threshold Voltage vs. Temperature 150 ID = 2.5 A VDD = 12 V RG = 0 W 0.8 0.6 −dVDS/dt(on) 0.4 dVDS/dt(off) 0.2 0 3 Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage 4 5 6 7 VGS (V) 8 9 10 Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage 100 td(off), (VGS = 10 V) 75 tr, (VGS = 5 V) tf, (VGS = 10 V) 50 tf, (VGS = 5 V) td(off), (VGS = 5 V) 25 tr, (VGS = 10 V) 0 0 400 td(on), (VGS = 5 V) td(on), (VGS = 10 V) 800 1200 1600 2000 RG (W) DRAIN−SOURCE VOLTAGE SLOPE (V/ms) 1 ID = 2.5 A VDD = 12 V TIME (ms) 3 IS (A) 200 0 2 T (°C) −dVDS/dt(on), VGS = 10 V 0.8 0.6 0.4 dVDS/dt(off), VGS = 5 V 0.2 dVDS/dt(off), VGS = 10 V −dVDS/dt(on), VGS = 5 V ID = 2.5 A VDD = 12 V 0 0 Figure 18. Resistive Load Switching Time vs. Gate Resistance 500 1000 RG (W) 1500 2000 Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 7 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 100 RqJA 788 mm2 °C/W 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance − SOT−223 Package 100 RqJA 788 mm2 °C/W 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE WIDTH (sec) Figure 21. Transient Thermal Resistance − DFN Package www.onsemi.com 8 10 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 22. Resistive Load Switching Test Circuit 90% 10% VIN VDS td(off) + tfall td(on) + trise 90% 10% 90% 10% IDS Figure 23. Resistive Load Switching Waveforms www.onsemi.com 9 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 24. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 25. Inductive Load Switching Waveforms www.onsemi.com 10 NCV8402, NCV8402A Table 1. ORDERING INFORMATION Device NCV8402STT1G NCV8402ASTT1G NCV8402STT3G NCV8402ASTT3G NCV8402AMNT2G NCV8402AMNWT1G Package Shipping† SOT−223 (Pb−Free) 1000 / Tape & Reel SOT−223 (Pb−Free) 4000 / Tape & Reel DFN6 (Pb−Free) 2000 / Tape & Reel DFN6 (Pb−Free, Wettable Flank) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 11 NCV8402, NCV8402A PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE P q q www.onsemi.com 12 NCV8402, NCV8402A PACKAGE DIMENSIONS DFN6 3x3.3, 0.95 PITCH CASE 506AX ISSUE O A D NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. B ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ PIN 1 REFERENCE 2X E DIM A A1 A3 b D D2 E E2 e K L L1 0.15 C 2X 0.15 C TOP VIEW 0.10 C A 6X 0.08 C SEATING PLANE (A3) SIDE VIEW SOLDERING FOOTPRINT* C A1 3.60 D2 4X 6X 1.35 e L 1 L1 6 6X 0.50 1 K 3 E2 6X MILLIMETERS MIN NOM MAX 0.80 −−− 0.90 0.00 −−− 0.05 0.20 REF 0.30 −−− 0.40 3.00 BSC 1.90 −−− 2.10 3.30 BSC 1.10 −−− 1.30 0.95 BSC 0.20 −−− −−− 0.40 −−− 0.60 0.00 −−− 0.15 2.15 0.95 PITCH 4 6X BOTTOM VIEW b 6X (NOTE 3) 0.83 DIMENSIONS: MILLIMETERS 0.10 C A B *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.05 C www.onsemi.com 13 NCV8402, NCV8402A PACKAGE DIMENSIONS DFN6 3x3, 0.95P CASE 506DK ISSUE O A D B PIN 1 REFERENCE 2X 0.10 C 2X 0.10 C A4 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 0.10 C NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A1 E PLATED SURFACE DETAIL B TOP VIEW L3 DETAIL B DIM A A1 A3 A4 b D D2 E E2 e L L3 PLATED SURFACE A A3 SECTION C−C 0.05 C NOTE 4 C SIDE VIEW SEATING PLANE RECOMMENDED SOLDERING FOOTPRINT* D2 6X L 1 6X 0.60 2.70 3 C MILLIMETERS MIN MAX 0.75 0.95 0.00 0.05 0.20 REF 0.05 0.15 0.35 0.45 3.00 BSC 2.40 2.60 3.00 BSC 1.50 1.70 0.95 BSC 0.30 0.50 0.00 0.10 PACKAGE OUTLINE C E2 3.30 1.80 6 4 e 6X b 0.10 C A B BOTTOM VIEW 0.05 C 1 NOTE 3 0.95 PITCH 6X 0.50 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 14 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCV8402/D