NCV8402STT3G

DATA SHEET www.onsemi.com Self-Protected Low Side Driver with Temperature and Current Limit V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 165 mW @ 10 V 2.0 A* *Max current limit value is dependent on input condition. NCV8402, NCV8402A MARKING DIAGRAMS DRAIN NCV8402/A is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. 4 4 1 2 SOT−223 CASE 318E STYLE 3 3 AYW xxxxx G G 1 2 3 SOURCE GATE DRAIN Features • • • • • • • • • • Short−Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection NCV8402AMNWT1G − Wettable Flanks Product dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 DFN6 (WF) CASE 506DK Drain Gate Input 1 xxxxx AYWW G (Note: Microdot may be in either location) DFN6 PACKAGE PIN DESCRIPTION G NC NC 1 2 3 7 EPAD 5 S 4 S Pin # Symbol Description 1 2 3 4 5 6 7 G NC NC S* S* S* EPAD Gate Input No Connect No Connect Source Source Source Drain *Pins 4, 5, 6 are internally shorted together. It is recommended to short these pins externally. ESD Protection Temperature Limit xxxxx AYWW G A = Assembly Location Y = Year W or WW = Work Week xxxxx = V8402 or 8402A G = Pb−Free Package 6 S Overvoltage Protection 1 1 Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial DFN6 CASE 506AX Current Limit ORDERING INFORMATION Current Sense See detailed ordering and shipping information on page 11 of this data sheet. Source © Semiconductor Components Industries, LLC, 2016 August, 2021 − Rev. 27 1 Publication Order Number: NCV8402/D NCV8402, NCV8402A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Gate−to−Source Voltage Continuous Drain Current Symbol Value Unit VDSS 42 V VDGR 42 V VGS ±14 V ID Internally Limited Total Power Dissipation − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) PD 1.1 1.74 8.9 W Total Power Dissipation − DFN Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) PD 0.76 1.78 8.9 W Maximum Continuous Drain Current − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) ID 1.54 1.94 6.75 A Maximum Continuous Drain Current − DFN Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C) ID 1.28 1.97 6.75 A SOT223 Junction−to−Ambient Steady State (Note 1) SOT223 Junction−to−Ambient Steady State (Note 2) SOT223 Junction−to−Soldering Point Steady State RqJA RqJA RqJS 114 72 14 °C/W DFN Junction−to−Ambient Steady State (Note 1) DFN Junction−to−Ambient Steady State (Note 2) DFN Junction−to−Soldering Point Steady State RqJA RqJA RqJS 163 70 14 Single Pulse Drain−to−Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) EAS 150 mJ Load Dump Voltage VLD 55 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Thermal Resistance (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). 2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 55 V 40 45 55 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 150°C (Note 5) Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25°C IDSS 0.25 4.0 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 150°C (Note 5) IDSS 1.1 20 mA VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA VGS = VDS, ID = 150 mA VGS(th) 1.8 2.2 V Gate Input Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS = 10 V, ID = 1.7 A, TJ = 25°C Static Drain−to−Source On−Resistance 1.3 VGS(th)/TJ 4.0 RDS(on) −mV/°C 165 200 VGS = 10 V, ID = 1.7 A, TJ = 150°C (Note 5) 305 400 VGS = 5.0 V, ID = 1.7 A, TJ = 25°C 195 230 VGS = 5.0 V, ID = 1.7 A, TJ = 150°C (Note 5) 360 460 VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 190 230 VGS = 5.0 V, ID = 0.5 A, TJ = 150°C (Note 5) 350 460 Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A mW VSD 1.0 V ton 25 30 ms Turn−Off Time (90% VIN to 10% ID) toff 120 200 ms Turn−On Rise Time (10% ID to 90% ID) trise 20 25 ms SWITCHING CHARACTERISTICS (Note 5) Turn−On Time (10% VIN to 90% ID) VGS = 10 V, VDD = 12 V, ID = 2.5 A, RL = 4.7 W Turn−Off Fall Time (90% ID to 10% ID) tfall 50 70 ms Slew−Rate ON (70% to 50% VDD) −dVDS/dtON 0.8 1.2 V/ms Slew−Rate OFF (50% to 70% VDD) dVDS/dtOFF 0.3 0.5 V/ms A SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C ILIM 3.7 4.3 5.0 VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Note 5) 2.3 3.0 3.7 VDS = 10 V, VGS = 10 V, TJ = 25°C 4.2 4.8 5.4 VDS = 10 V, VGS = 10 V, TJ = 150°C (Note 5) 2.7 3.6 4.5 150 175 200 Temperature Limit (Turn−off) Thermal Hysteresis Temperature Limit (Turn−off) Thermal Hysteresis VGS = 5.0 V (Note 5) TLIM(off) VGS = 5.0 V DTLIM(on) VGS = 10 V (Note 5) TLIM(off) VGS = 10 V DTLIM(on) VGS = 5 V ID = 1.0 A IGON °C 15 150 165 185 15 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. www.onsemi.com 3 50 mA 400 IGCL 0.05 0.4 mA NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol VGS = 5 V, VDS = 10 V IGTL Min Typ Max Unit GATE INPUT CHARACTERISTICS (Note 5) Thermal Limit Fault Gate Input Current 0.15 VGS = 10 V, VDS = 10 V mA 0.7 ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4000 V 400 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 10 Emax (mJ) IL(max) (A) 1000 TJstart = 25°C 100 TJstart = 25°C TJstart = 150°C TJstart = 150°C 1 10 10 10 100 L (mH) Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance 100 L (mH) Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 1000 10 1 0.1 Emax (mJ) IL(max) (A) TJstart = 25°C TJstart = 150°C 1 100 TJstart = 150°C 10 10 TIME IN CLAMP (ms) TJstart = 25°C 1 Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp 8 8V TA = 25°C 7 8 −40°C 6 5V 4V 25°C ID (A) 5 3.5 V 4 3 100°C 4 3 2 3V 2 1 VGS = 2.5 V 1 0 VDS = 10 V 7 6V 5 ID (A) Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 10 V 6 10 TIME IN CLAMP (ms) 0 1 2 3 4 0 5 150°C VDS (V) 1 3 VGS (V) Figure 6. On−state Output Characteristics Figure 7. Transfer Characteristics www.onsemi.com 5 2 4 5 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 350 400 150°C, VGS = 5 V 150°C, ID = 0.5 A 300 RDS(on) (mW) 200 100°C, ID = 1.7 A 100°C, ID = 0.5 A 25°C, ID = 1.7 A 100 5 25°C, ID = 0.5 A −40°C, ID = 0.5 A −40°C, ID = 1.7 A 0 4 RDS(on) (mW) 150°C, ID = 1.7 A 300 100°C, VGS = 5 V 200 100°C, VGS = 10 V 25°C, VGS = 5 V 150 25°C, VGS = 10 V −40°C, VGS = 5 V 100 −40°C, VGS = 10 V 6 7 8 9 50 0.2 10 VGS (V) 1 1.2 ID (A) Figure 8. RDS(on) vs. Gate−Source Voltage Figure 9. RDS(on) vs. Drain Current 0.4 0.6 0.8 1.4 1.6 1.8 2 8 2 ID = 1.7 A 1.75 −40°C 7 VGS = 5 V 1.5 6 ILIM (A) RDS(on) (NORMIALZIZED) 150°C, VGS = 10 V 250 1.25 1 25°C 5 100°C 4 VGS = 10 V 150°C 3 0.75 0.5 −40 −20 0 20 40 60 T (°C) 80 100 120 2 140 VDS = 10 V 5 6 7 8 9 10 VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 10 8 VGS = 0 V 7 VGS = 10 V IDSS (mA) 6 ILIM (A) 150°C 1 5 4 40 60 80 0.01 −40°C 0.001 3 20 100°C 25°C VGS = 5 V VDS = 10 V 2 −40 −20 0 0.1 100 120 0.0001 10 140 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current www.onsemi.com 6 40 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 1.1 ID = 150 mA VGS = VDS 1.1 1 1 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 −40°C 0.9 25°C 0.8 100°C 0.8 0.7 0.7 0.6 0.6 −40 0.5 150°C −20 0 20 40 60 80 100 120 140 VGS = 0 V 1 2 3 4 5 T (°C) Figure 14. Normalized Threshold Voltage vs. Temperature td(off) tf tr td(on) 3 4 5 6 7 VGS (V) 8 9 10 DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 100 50 9 10 ID = 2.5 A VDD = 12 V RG = 0 W 0.8 0.6 −dVDS/dt(on) 0.4 dVDS/dt(off) 0.2 0 3 Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage 4 5 6 7 VGS (V) 8 9 10 Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage 100 75 td(off), (VGS = 10 V) tr, (VGS = 5 V) tf, (VGS = 10 V) 50 tf, (VGS = 5 V) td(off), (VGS = 5 V) 25 tr, (VGS = 10 V) 0 400 td(on), (VGS = 5 V) td(on), (VGS = 10 V) 800 1200 1600 2000 RG (W) DRAIN−SOURCE VOLTAGE SLOPE (V/ms) 1 ID = 2.5 A VDD = 12 V TIME (ms) 8 1 ID = 2.5 A VDD = 12 V RG = 0 W 150 0 7 Figure 15. Source−Drain Diode Forward Characteristics 200 0 6 IS (A) −dVDS/dt(on), VGS = 10 V 0.8 0.6 0.4 dVDS/dt(off), VGS = 5 V 0.2 0 dVDS/dt(off), VGS = 10 V −dVDS/dt(on), VGS = 5 V 0 Figure 18. Resistive Load Switching Time vs. Gate Resistance 500 1000 RG (W) ID = 2.5 A VDD = 12 V 1500 2000 Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 7 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 100 RqJA 788 mm2 °C/W 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance − SOT−223 Package 100 RqJA 788 mm2 °C/W 50% Duty Cycle 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE WIDTH (sec) Figure 21. Transient Thermal Resistance − DFN Package www.onsemi.com 8 10 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 22. Resistive Load Switching Test Circuit 90% 10% VIN VDS td(off) + tfall td(on) + trise 90% 10% 90% 10% IDS Figure 23. Resistive Load Switching Waveforms www.onsemi.com 9 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 24. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 25. Inductive Load Switching Waveforms www.onsemi.com 10 NCV8402, NCV8402A ORDERING INFORMATION Device* NCV8402STT1G NCV8402ASTT1G NCV8402STT3G NCV8402ASTT3G NCV8402AMNT2G NCV8402AMNWT1G Package Shipping† SOT−223 (Pb−Free) 1000 / Tape & Reel SOT−223 (Pb−Free) 4000 / Tape & Reel DFN6 (Pb−Free) 2000 / Tape & Reel DFN6 (Pb−Free, Wettable Flank) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW6 3x3, 0.95P CASE 506DK ISSUE A 1 SCALE 2:1 DATE 07 MAY 2021 GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON12549G DFNW6 3X3, 0.95P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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