DATA SHEET
www.onsemi.com
Self-Protected Low Side
Driver with Temperature
and Current Limit
V(BR)DSS
(Clamped)
RDS(ON) TYP
ID MAX
42 V
165 mW @ 10 V
2.0 A*
*Max current limit value is dependent on input
condition.
NCV8402, NCV8402A
MARKING DIAGRAMS
DRAIN
NCV8402/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
4
4
1
2
SOT−223
CASE 318E
STYLE 3
3
AYW
xxxxx G
G
1
2
3
SOURCE
GATE
DRAIN
Features
•
•
•
•
•
•
•
•
•
•
Short−Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
NCV8402AMNWT1G − Wettable Flanks Product
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
DFN6 (WF)
CASE 506DK
Drain
Gate
Input
1
xxxxx
AYWW
G
(Note: Microdot may be in either location)
DFN6 PACKAGE PIN DESCRIPTION
G NC NC
1 2 3
7
EPAD
5
S
4
S
Pin #
Symbol
Description
1
2
3
4
5
6
7
G
NC
NC
S*
S*
S*
EPAD
Gate Input
No Connect
No Connect
Source
Source
Source
Drain
*Pins 4, 5, 6 are internally shorted together.
It is recommended to short these pins externally.
ESD Protection
Temperature
Limit
xxxxx
AYWW
G
A
= Assembly Location
Y
= Year
W or WW = Work Week
xxxxx = V8402 or 8402A
G
= Pb−Free Package
6
S
Overvoltage
Protection
1
1
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
DFN6
CASE 506AX
Current
Limit
ORDERING INFORMATION
Current
Sense
See detailed ordering and shipping information on page 11 of
this data sheet.
Source
© Semiconductor Components Industries, LLC, 2016
August, 2021 − Rev. 27
1
Publication Order Number:
NCV8402/D
NCV8402, NCV8402A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(RG = 1.0 MW)
Gate−to−Source Voltage
Continuous Drain Current
Symbol
Value
Unit
VDSS
42
V
VDGR
42
V
VGS
±14
V
ID
Internally Limited
Total Power Dissipation − SOT−223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
PD
1.1
1.74
8.9
W
Total Power Dissipation − DFN Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
PD
0.76
1.78
8.9
W
Maximum Continuous Drain Current − SOT−223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
ID
1.54
1.94
6.75
A
Maximum Continuous Drain Current − DFN Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
ID
1.28
1.97
6.75
A
SOT223 Junction−to−Ambient Steady State (Note 1)
SOT223 Junction−to−Ambient Steady State (Note 2)
SOT223 Junction−to−Soldering Point Steady State
RqJA
RqJA
RqJS
114
72
14
°C/W
DFN Junction−to−Ambient Steady State (Note 1)
DFN Junction−to−Ambient Steady State (Note 2)
DFN Junction−to−Soldering Point Steady State
RqJA
RqJA
RqJS
163
70
14
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)
EAS
150
mJ
Load Dump Voltage
VLD
55
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Thermal Resistance
(VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
ID
DRAIN
IG
+
VDS
GATE
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
www.onsemi.com
2
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
V(BR)DSS
42
46
55
V
40
45
55
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
VGS = 0 V, ID = 10 mA, TJ = 150°C
(Note 5)
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = 32 V, TJ = 25°C
IDSS
0.25
4.0
mA
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
IDSS
1.1
20
mA
VDS = 0 V, VGS = 5.0 V
IGSSF
50
100
mA
VGS = VDS, ID = 150 mA
VGS(th)
1.8
2.2
V
Gate Input Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS = 10 V, ID = 1.7 A, TJ = 25°C
Static Drain−to−Source On−Resistance
1.3
VGS(th)/TJ
4.0
RDS(on)
−mV/°C
165
200
VGS = 10 V, ID = 1.7 A, TJ = 150°C
(Note 5)
305
400
VGS = 5.0 V, ID = 1.7 A, TJ = 25°C
195
230
VGS = 5.0 V, ID = 1.7 A, TJ = 150°C
(Note 5)
360
460
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C
190
230
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
350
460
Source−Drain Forward On Voltage
VGS = 0 V, IS = 7.0 A
mW
VSD
1.0
V
ton
25
30
ms
Turn−Off Time (90% VIN to 10% ID)
toff
120
200
ms
Turn−On Rise Time (10% ID to 90% ID)
trise
20
25
ms
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Time (10% VIN to 90% ID)
VGS = 10 V, VDD = 12 V,
ID = 2.5 A, RL = 4.7 W
Turn−Off Fall Time (90% ID to 10% ID)
tfall
50
70
ms
Slew−Rate ON (70% to 50% VDD)
−dVDS/dtON
0.8
1.2
V/ms
Slew−Rate OFF (50% to 70% VDD)
dVDS/dtOFF
0.3
0.5
V/ms
A
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C
ILIM
3.7
4.3
5.0
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
2.3
3.0
3.7
VDS = 10 V, VGS = 10 V, TJ = 25°C
4.2
4.8
5.4
VDS = 10 V, VGS = 10 V, TJ = 150°C
(Note 5)
2.7
3.6
4.5
150
175
200
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
VGS = 5.0 V (Note 5)
TLIM(off)
VGS = 5.0 V
DTLIM(on)
VGS = 10 V (Note 5)
TLIM(off)
VGS = 10 V
DTLIM(on)
VGS = 5 V ID = 1.0 A
IGON
°C
15
150
165
185
15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
VGS = 10 V ID = 1.0 A
Current Limit Gate Input Current
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
www.onsemi.com
3
50
mA
400
IGCL
0.05
0.4
mA
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
VGS = 5 V, VDS = 10 V
IGTL
Min
Typ
Max
Unit
GATE INPUT CHARACTERISTICS (Note 5)
Thermal Limit Fault Gate Input Current
0.15
VGS = 10 V, VDS = 10 V
mA
0.7
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
V
400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
4
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
10
Emax (mJ)
IL(max) (A)
1000
TJstart = 25°C
100
TJstart = 25°C
TJstart = 150°C
TJstart = 150°C
1
10
10
10
100
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
100
L (mH)
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
1000
10
1
0.1
Emax (mJ)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
1
100
TJstart = 150°C
10
10
TIME IN CLAMP (ms)
TJstart = 25°C
1
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
8
8V
TA = 25°C
7
8
−40°C
6
5V
4V
25°C
ID (A)
5
3.5 V
4
3
100°C
4
3
2
3V
2
1
VGS = 2.5 V
1
0
VDS = 10 V
7
6V
5
ID (A)
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
10 V
6
10
TIME IN CLAMP (ms)
0
1
2
3
4
0
5
150°C
VDS (V)
1
3
VGS (V)
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
www.onsemi.com
5
2
4
5
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
350
400
150°C, VGS = 5 V
150°C, ID = 0.5 A
300
RDS(on) (mW)
200
100°C, ID = 1.7 A
100°C, ID = 0.5 A
25°C, ID = 1.7 A
100
5
25°C, ID = 0.5 A
−40°C, ID = 0.5 A
−40°C, ID = 1.7 A
0
4
RDS(on) (mW)
150°C, ID = 1.7 A
300
100°C, VGS = 5 V
200
100°C, VGS = 10 V
25°C, VGS = 5 V
150
25°C, VGS = 10 V
−40°C, VGS = 5 V
100
−40°C, VGS = 10 V
6
7
8
9
50
0.2
10
VGS (V)
1
1.2
ID (A)
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
0.4
0.6
0.8
1.4
1.6
1.8
2
8
2
ID = 1.7 A
1.75
−40°C
7
VGS = 5 V
1.5
6
ILIM (A)
RDS(on) (NORMIALZIZED)
150°C, VGS = 10 V
250
1.25
1
25°C
5
100°C
4
VGS = 10 V
150°C
3
0.75
0.5
−40
−20
0
20
40
60
T (°C)
80
100
120
2
140
VDS = 10 V
5
6
7
8
9
10
VGS (V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
8
VGS = 0 V
7
VGS = 10 V
IDSS (mA)
6
ILIM (A)
150°C
1
5
4
40
60
80
0.01
−40°C
0.001
3
20
100°C
25°C
VGS = 5 V
VDS = 10 V
2
−40 −20 0
0.1
100
120
0.0001
10
140
15
20
25
30
35
TJ (°C)
VDS (V)
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
www.onsemi.com
6
40
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
1.1
ID = 150 mA
VGS = VDS
1.1
1
1
VSD (V)
NORMALIZED VGS(th) (V)
1.2
0.9
−40°C
0.9
25°C
0.8
100°C
0.8
0.7
0.7
0.6
0.6
−40
0.5
150°C
−20
0
20
40
60
80
100
120
140
VGS = 0 V
1
2
3
4
5
T (°C)
Figure 14. Normalized Threshold Voltage vs.
Temperature
td(off)
tf
tr
td(on)
3
4
5
6
7
VGS (V)
8
9
10
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
TIME (ms)
100
50
9
10
ID = 2.5 A
VDD = 12 V
RG = 0 W
0.8
0.6
−dVDS/dt(on)
0.4
dVDS/dt(off)
0.2
0
3
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
4
5
6
7
VGS (V)
8
9
10
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
100
75
td(off), (VGS = 10 V)
tr, (VGS = 5 V)
tf, (VGS = 10 V)
50
tf, (VGS = 5 V)
td(off), (VGS = 5 V)
25
tr, (VGS = 10 V)
0
400
td(on), (VGS = 5 V)
td(on), (VGS = 10 V)
800
1200
1600
2000
RG (W)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
1
ID = 2.5 A
VDD = 12 V
TIME (ms)
8
1
ID = 2.5 A
VDD = 12 V
RG = 0 W
150
0
7
Figure 15. Source−Drain Diode Forward
Characteristics
200
0
6
IS (A)
−dVDS/dt(on), VGS = 10 V
0.8
0.6
0.4
dVDS/dt(off), VGS = 5 V
0.2
0
dVDS/dt(off), VGS = 10 V
−dVDS/dt(on), VGS = 5 V
0
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
500
1000
RG (W)
ID = 2.5 A
VDD = 12 V
1500
2000
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
www.onsemi.com
7
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
100
RqJA 788 mm2 °C/W
50% Duty Cycle
10
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance − SOT−223 Package
100
RqJA 788 mm2 °C/W
50% Duty Cycle
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE WIDTH (sec)
Figure 21. Transient Thermal Resistance − DFN Package
www.onsemi.com
8
10
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
G DUT
−
S
IDS
Figure 22. Resistive Load Switching Test Circuit
90%
10%
VIN
VDS
td(off) + tfall
td(on) + trise
90%
10%
90%
10%
IDS
Figure 23. Resistive Load Switching Waveforms
www.onsemi.com
9
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
RG
+
VDD
G DUT
−
S
tp
IDS
Figure 24. Inductive Load Switching Test Circuit
5V
VIN
0V
Tav
Tp
V(BR)DSS
Ipk
VDD
VDS
VDS(on)
IDS
0
Figure 25. Inductive Load Switching Waveforms
www.onsemi.com
10
NCV8402, NCV8402A
ORDERING INFORMATION
Device*
NCV8402STT1G
NCV8402ASTT1G
NCV8402STT3G
NCV8402ASTT3G
NCV8402AMNT2G
NCV8402AMNWT1G
Package
Shipping†
SOT−223
(Pb−Free)
1000 / Tape & Reel
SOT−223
(Pb−Free)
4000 / Tape & Reel
DFN6
(Pb−Free)
2000 / Tape & Reel
DFN6
(Pb−Free, Wettable Flank)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
DATE 02 OCT 2018
SCALE 1:1
q
q
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
SOT−223 (TO−261)
CASE 318E−04
ISSUE R
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE
NC
CATHODE
STYLE 6:
PIN 1.
2.
3.
4.
RETURN
INPUT
OUTPUT
INPUT
STYLE 7:
PIN 1.
2.
3.
4.
ANODE 1
CATHODE
ANODE 2
CATHODE
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
STYLE 3:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 8:
STYLE 12:
PIN 1. INPUT
2. OUTPUT
3. NC
4. OUTPUT
CANCELLED
DATE 02 OCT 2018
STYLE 4:
PIN 1.
2.
3.
4.
SOURCE
DRAIN
GATE
DRAIN
STYLE 5:
PIN 1.
2.
3.
4.
STYLE 9:
PIN 1.
2.
3.
4.
INPUT
GROUND
LOGIC
GROUND
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
DRAIN
GATE
SOURCE
GATE
STYLE 13:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
GENERIC
MARKING DIAGRAM*
AYW
XXXXXG
G
1
A
= Assembly Location
Y
= Year
W
= Work Week
XXXXX = Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42680B
SOT−223 (TO−261)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW6 3x3, 0.95P
CASE 506DK
ISSUE A
1
SCALE 2:1
DATE 07 MAY 2021
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
ALYWG
G
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON12549G
DFNW6 3X3, 0.95P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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