NCV8405STT3G

NCV8405A, NCV8405B Self-Protected Low Side Driver with Temperature and Current Limit NCV8405A/B is a three terminal protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. Features • • • • • • • • • Short−Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 90 mW @ 10 V 6.0 A* *Max current limit value is dependent on input condition. Drain Overvoltage Protection Gate Input ESD Protection Temperature Limit Current Limit Current Sense Source Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial MARKING DIAGRAM 4 1 2 3 SOT−223 CASE 318E STYLE 3 4 1 2 DRAIN 4 3 DPAK CASE 369C AYW xxxxx G G 1 2 3 SOURCE GATE DRAIN YWW xxxxxG A = Assembly Location Y = Year W, WW = Work Week xxxxx = 8405A or 8405B G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. © Semiconductor Components Industries, LLC, 2016 June, 2019 − Rev. 8 1 Publication Order Number: NCV8405/D NCV8405A, NCV8405B MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VDSS 42 V VDGR 42 V Gate−to−Source Voltage VGS "14 V Continuous Drain Current ID Drain−to−Source Voltage Internally Clamped Drain−to−Gate Voltage Internally Clamped (RG = 1.0 MW) Power Dissipation − SOT−223 Version @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C Power Dissipation − DPAK Version PD @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TS = 25°C Thermal Resistance − SOT−223 Version Internally Limited 1.0 1.7 11.4 W 2.0 2.5 40 °C/W Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Junction−to−Soldering Point Steady State RqJA RqJA RqJS 130 72 11 Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Junction−to−Soldering Point Steady State RqJA RqJA RqJS 60 50 3.0 Single Pulse Drain−to−Source Avalanche Energy (VDD = 40 V, VG = 5.0 V, IPK = 2.8 A, L = 80 mH, RG(ext) = 25 W, TJ = 25°C) EAS 275 mJ Load Dump Voltage VLD 53 V Operating Junction Temperature TJ −40 to 150 °C Storage Temperature Tstg −55 to 150 °C Thermal Resistance − DPAK Version VLD = VA + VS (VGS = 0 and 10 V, RI = 2.0 W, RL = 6.0 W, td = 400 ms) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick). 2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8405A, NCV8405B ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 51 V 42 45 51 0.5 2.0 2.0 10 50 100 1.6 2.0 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 150°C (Note 5) VGS = 0 V, VDS = 32 V, TJ = 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 32 V, TJ = 150°C (Note 5) Gate Input Current VDS = 0 V, VGS = 5.0 V IGSSF mA mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS = VDS, ID = 150 mA Gate Threshold Temperature Coefficient VGS(th) 1.0 VGS(th)/TJ VGS = 10 V, ID = 1.4 A, TJ = 25°C 4.0 90 100 VGS = 10 V, ID = 1.4 A, TJ = 150°C (Note 5) 165 190 Static Drain−to−Source On−Resistance RDS(on) VGS = 5.0 V, ID = 1.4 A, TJ = 25°C 105 120 VGS = 5.0 V, ID = 1.4 A, TJ = 150°C (Note 5) 185 210 VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 105 120 VGS = 5.0 V, ID = 0.5 A, TJ = 150°C (Note 5) 185 210 Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A VSD VGS = 10 V, VDD = 12 V ID = 2.5 A, RL = 4.7 W −dVDS/dtON 1.0 dVDS/dtOFF 0.4 V −mV/°C mW 1.05 V tON 20 ms tOFF 110 SWITCHING CHARACTERISTICS (Note 5) Turn−ON Time (10% VIN to 90% ID) Turn−OFF Time (90% VIN to 10% ID) Slew−Rate ON (70% VDS to 50% VDS) VGS = 10 V, VDD = 12 V, RL = 4.7 W Slew−Rate OFF (50% VDS to 70% VDS) V/ms SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C 6.0 9.0 11 VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Note 5) 3.0 5.0 8.0 VDS = 10 V, VGS = 10 V, TJ = 25°C 7.0 10.5 13 VDS = 10 V, VGS = 10 V, TJ = 150°C (Note 5) 4.0 7.5 10 150 180 200 150 165 Temperature Limit (Turn−off) Thermal Hysteresis Temperature Limit (Turn−off) Thermal Hysteresis ILIM VGS = 5.0 V (Note 5) TLIM(off) VGS = 5.0 V DTLIM(on) VGS = 10 V (Note 5) TLIM(off) VGS = 10 V DTLIM(on) 15 VGS = 5 V ID = 1.0 A IGON 50 IGCL 0.05 A °C 15 185 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V 400 VGS = 10 V, VDS = 10 V Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V mA mA 0.4 0.22 IGTL VGS = 10 V, VDS = 10 V mA 1.0 ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. www.onsemi.com 3 ESD 4000 400 V NCV8405A, NCV8405B TYPICAL PERFORMANCE CURVES 10 1000 TJstart = 25°C Emax (mJ) IL(max) (A) TJstart = 25°C TJstart = 150°C 1 10 TJstart = 150°C 10 10 100 L (mH) 100 Figure 2. Single Pulse Maximum Switch−off Current vs. Load Inductance 100 L (mH) Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 1000 100 Emax (mJ) IL(max) (A) TJstart = 25°C 10 TJstart = 25°C 100 TJstart = 150°C TJstart = 150°C 1 1 10 10 TIME IN CLAMP (ms) 1 Figure 4. Single Pulse Maximum Inductive Switch−off Current vs. Time in Clamp 9V 14 Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 12 TA = 25°C 8V VDS = 10 V 25°C 8 10 6 V 100°C ID (A) ID (A) −40°C 10 10 V 12 7 V 10 TIME IN CLAMP (ms) 4V 8 5V 6 3V 6 150°C 4 4 0 2 VGS = 2.5 V 2 0 1 2 3 4 0 5 1 VDS (V) Figure 6. Output Characteristics 2 3 VGS (V) 4 Figure 7. Transfer Characteristics www.onsemi.com 4 5 NCV8405A, NCV8405B TYPICAL PERFORMANCE CURVES 300 210 150°C, ID = 1.4 A 250 190 150°C, VGS = 10 V 200 150 RDS(on) (mW) RDS(on) (mW) 170 150°C, ID = 0.5 A 100°C, ID = 1.4 A 100°C, ID = 0.5 A 100 8 100°C, VGS = 10 V 25°C, VGS = 5 V 9 50 0.5 10 Figure 8. RDS(on) vs. Gate−Source Voltage RDS(on) (VGS = 5 V, TJ = 25°C)(NORMALIZED) 100°C, VGS = 5 V 110 −40°C, VGS = 5 V −40°C, VGS = 10 V 70 25°C, ID = 0.5 A 6 7 VGS (V) 130 90 25°C, ID = 1.4 A −40°C, ID = 1.4 A 50 −40°C, ID = 0.5 A 3 4 5 150°C, VGS = 10 V 150 1 1.5 2 25°C, VGS = 10 V 2.5 3 ID (A) 3.5 4 4.5 5 Figure 9. RDS(on) vs. Drain Current 15 2.0 VDS = 10 V ID = 1.4 A 1.75 13 VGS = 5 V 11 ILIM (A) 1.5 1.25 1.0 −40°C 25°C 9 100°C 7 VGS = 10 V 150°C 5 0.75 0.5 −40 −20 0 20 40 60 T (°C) 80 100 120 3 140 5 6 7 8 9 10 VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate−Source Voltage 10 VGS = 0 V 14 150°C 1 IDSS (mA) ILIM (A) 12 VGS = 10 V 10 0.1 8 VGS = 5 V 0.01 100°C −40°C 25°C 6 VDS = 10 V 4 −40 −20 0 20 40 60 80 0.001 10 100 120 140 160 15 20 25 30 35 TJ (°C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain−to−Source Leakage Current www.onsemi.com 5 40 NCV8405A, NCV8405B TYPICAL PERFORMANCE CURVES 1.1 ID = 150 mA VGS = VDS 1.1 1 −40°C 25°C 0.9 1 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 0.8 100°C 0.8 0.7 150°C 0.6 0.7 0.5 0.6 −40 0.4 −20 0 20 40 60 80 100 120 140 VGS = 0 V 1 2 3 4 5 T (°C) 200 TIME (ms) 100 ID = 2.5 A VDD = 12 V RG = 0 W tr td(off) 50 tf td(on) 0 3 4 5 6 7 VGS (V) 8 9 10 75 50 td(off), (VGS = 10 V) tf, (VGS = 5 V) 25 t d(on), (VGS = 10 V) t , (V r GS = 10 V) 0 0 tr, (VGS = 5 V) tf, (VGS = 10 V) td(off), (VGS = 5 V) td(on), (VGS = 5 V) 9 10 ID = 2.5 A VDD = 12 V RG = 0 W 1.000 −dVDS/dt(on) 0.500 dVDS/dt(off) 0.000 3 4 5 6 7 VGS (V) 8 9 10 Figure 17. Resistive Load Switching Drain−Source Voltage Slope vs. Gate−Source Voltage DRAIN−SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 100 ID = 2.5 A VDD = 12 V 8 1.500 Figure 16. Resistive Load Switching Time vs. Gate−Source Voltage 125 7 Figure 15. Body−Diode Forward Characteristics DRAIN−SOURCE VOLTAGE SLOPE (V/ms) Figure 14. Normalized Threshold Voltage vs. Temperature 150 6 IS (A) 200 400 600 800 1000 1200 1400 1600 1800 2000 RG (W) 1.5 1.3 −dVDS/dt(on), VGS = 10 V 1.1 0.9 0.7 0.5 dVDS/dt(off), VGS = 5 V 0.3 dVDS/dt(off), VGS = 10 V −dVDS/dt(on), VGS = 5 V ID = 2.5 A VDD = 12 V 0.1 −0.1 0 Figure 18. Resistive Load Switching Time vs. Gate Resistance 500 1000 RG (W) 1500 200 Figure 19. Drain−Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 6 NCV8405A, NCV8405B TYPICAL PERFORMANCE CURVES 100 20% 10% 10 5% 2% 1 1% 0.1 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance 140 TA 25°C 120 qJA Curve with PCB cu thk 1.0 oz 100 qJA (°C/W) RqJA 1” SQ 1 Oz COPPER 50% Duty Cycle 80 60 qJA Curve with PCB cu thk 2.0 oz 40 20 0 0 100 200 300 400 500 600 COPPER HEAT SPREADER AREA (mm2) Figure 21. qJA vs. Copper www.onsemi.com 7 700 100 1000 NCV8405A, NCV8405B TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT − S IDS Figure 22. Resistive Load Switching Test Circuit 90% 10% VIN tON tOFF 90% 10% IDS Figure 23. Resistive Load Switching Waveforms www.onsemi.com 8 NCV8405A, NCV8405B TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT − S tp IDS Figure 24. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 25. Inductive Load Switching Waveforms www.onsemi.com 9 NCV8405A, NCV8405B ORDERING INFORMATION Package Shipping† NCV8405ASTT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NCV8405ASTT3G SOT−223 (Pb−Free) 4000 / Tape & Reel NCV8405ADTRKG DPAK (Pb−Free) 2500 / Tape & Reel NCV8405BDTRKG DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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