NCV8440STT3G

NCV8440, NCV8440A Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • • • • • • www.onsemi.com Diode Clamp Between Gate and Source ESD Protection − Human Body Model 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance These are Pb−Free Devices VDSS (Clamped) RDS(ON) TYP ID MAX 52 V 95 mW @ 10 V 2.6 A Drain (Pins 2, 4) Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Overvoltage Protection Gate (Pin 1) Applications ESD Protection • Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers • NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable Source (Pin 3) MARKING DIAGRAM DRAIN 4 SOT−223 CASE 318E STYLE 3 1 = Gate 2 = Drain 3 = Source A Y W xxxxx G AYW xxxxx G G 1 GATE 2 3 SOURCE DRAIN = Assembly Location = Year = Work Week = V8440 or 8440A = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 October, 2018 − Rev. 8 1 Publication Order Number: NCV8440/D NCV8440, NCV8440A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 52−59 V Gate−to−Source Voltage − Continuous VGS ±15 V IDM 2.6 10 A PD 1.69 W Drain Current − Continuous @ TA = 25°C − Single Pulse (tp = 10 ms) (Note 1) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range ID TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 mH, RG = 25 W) EAS 110 mJ Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) VLD 60 Thermal Resistance, Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds RqJA RqJA 74 169 TL 260 V °C/W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2). 2. When surface mounted to a FR4 board using minimum recommended pad size, (Cu area 0.412 in2). + ID DRAIN IG + VDS GATE SOURCE VGS − − Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8440, NCV8440A MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 52 50.8 55 54 −9.3 59 59.5 V V mV/°C OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 V, ID = 1.0 mA, TJ = 25°C) (VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) (Note 4) Temperature Coefficient (Negative) Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) (VDS = 40 V, VGS = 0 V, TJ = 125°C) (Note 4) IDSS Gate−Body Leakage Current (VGS = ±8 V, VDS = 0 V) (VGS = ±14 V, VDS = 0 V) IGSS 10 25 ±35 ±10 mA mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 100 mA) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 3.5 V, ID = 0.6 A) (VGS = 4.0 V, ID = 1.5 A) (VGS = 10 V, ID = 2.6 A) RDS(on) Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A) 1.1 1.5 −4.1 1.9 150 135 95 180 160 110 V mV/°C mW gFS 3.8 Mhos Ciss 155 pF Coss 60 Crss 25 Ciss 170 Coss 70 Crss 30 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance VDS = 35 V, VGS = 0 V, f = 10 kHz Transfer Capacitance Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, f = 10 kHz Transfer Capacitance pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NCV8440, NCV8440A MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 40 V, ID = 2.6 A, RD = 15.4 W Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time VGS = 4.5 V, VDD = 40 V, ID = 1.0 A, RD = 40 W Fall Time Turn−On Delay Time Rise Time VGS = 10 V, VDD = 15 V, ID = 2.6 A, RD = 5.8 W Turn−Off Delay Time Fall Time Gate Charge VGS = 4.5 V, VDS = 40 V, ID = 2.6 A (Note 3) Gate Charge VGS = 4.5 V, VDS = 15 V, ID = 1.5 A (Note 3) td(on) 375 tr 1525 td(off) 1530 tf 1160 td(on) 325 tr 1275 td(off) 1860 tf 1150 td(on) 190 tr 710 td(off) 2220 tf 1180 QT 4.5 Q1 0.9 Q2 2.6 QT 3.9 Q1 1.0 Q2 1.7 VSD 0.81 0.66 trr 730 ta 200 tb 530 QRR 6.3 ns ns ns nC nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage IS = 2.6 A, VGS = 0 V (Note 3) IS = 2.6 A, VGS = 0 V, TJ = 125°C Reverse Recovery Time IS = 1.5 A, VGS = 0 V, dIs/dt = 100 A/ms (Note 3) Reverse Recovery Stored Charge 1.5 V ns mC ESD CHARACTERISTICS (Note 4) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 5000 V 500 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Not subject to production testing. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 4 NCV8440, NCV8440A 10 Emax, MAX SWITCHING ENERGY (mJ) 100°C 150°C 1 0.1 10 ID, DRAIN CURRENT (AMPS) 100 25°C 1 10 100 100°C 150°C 10 0.1 1 10 100 L, LOAD INDUCTANCE (mH) Figure 1. Single Pulse Maximum Switch−off Current vs. Load Inductance Figure 2. Single Pulse Maximum Switching Energy vs. Load Inductance VGS = 10 V 10 5V VDS ≥ 10 V 4V 3.8 V TJ = 25°C 8 3.6 V 6 3.4 V 3.2 V 4 3V 2.8 V 2 0 25°C L, LOAD INDUCTANCE (mH) ID, DRAIN CURRENT (AMPS) ILmax, MAX SWITCH−OFF CURRENT (A) TYPICAL PERFORMANCE CURVES 2.6 V 2.4 V 0 1 2 3 4 8 6 4 TJ = 25°C 0 5 TJ = 150°C 2 1 1.5 TJ = −40°C 2.5 3 2 3.5 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 3. On−State Output Characteristics Figure 4. Transfer Characteristics 300 350 ID = 2 A 300 250 250 RDS(on) (mW) RDS(on) (mW) 150°C 200 25°C 150 200 150°C, VGS = 10 V 150 25°C, VGS = 5 V 25°C, VGS = 10 V 100 100 50 150°C, VGS = 5 V −40°C, VGS = 5 V −40°C 3 4 5 6 7 8 9 50 10 1 2 3 4 −40°C, VGS = 10 V 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 5. RDS(on) vs. Gate−Source Voltage Figure 6. RDS(on) vs. Drain Current www.onsemi.com 5 9 10 NCV8440, NCV8440A TYPICAL PERFORMANCE CURVES 2.00 1.2 NORMALIZED RDS(on) 1.75 NORMALIZED VGS(th) (V) ID = 2 A 1.50 VGS = 5 V 1.25 1.00 VGS = 10 V 0.75 0.50 −40 −20 0 20 40 60 80 100 120 ID = 100 mA, VDS = VGS 1.1 1.0 0.9 0.8 0.7 0.6 −40 −20 140 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 120 140 100 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Normalized RDS(on) vs. Temperature Figure 8. Normalized Threshold Voltage vs. Temperature 10 1000 VGS = 0 V IS, SOURCE CURRENT (A) 100 IDSS (mA) 10 1 0.1 150°C 100°C 0.01 25 30 35 45 40 150°C 0.6 0.7 −40°C 0.8 0.9 1 VDS , DRAIN−TO−SOURCE VOLTAGE (V) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Drain−to−Source Leakage Current Figure 10. Source−Drain Diode Forward Characteristics TJ = 25°C Ciss VGS = 0 V Crss 200 Ciss 100 Coss Crss 0 10 2 0 0.5 50 5 VGS 0 VDS 5 10 15 20 25 30 35 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) C, CAPACITANCE (pF) 20 400 VDS = 0 V 300 4 5 50 QT VDS 4 QGS QGD 3 30 2 20 1 0 0 1 2 4 3 QG, TOTAL GATE CHARGE (nC) Figure 12. Gate−to−Source Voltage vs. Total Gate Charge www.onsemi.com 6 10 ID = 2.6 A TJ = 25°C GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Capacitance Variation 40 VGS 5 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 500 15 6 25°C 25°C 0.001 10 8 NCV8440, NCV8440A TYPICAL PERFORMANCE CURVES 3000 VDD = 40 V VDD = 15 V 2500 10,000 td(off) VDD = 40 V VDD = 15 V td(off) ID = 2.6 A RG = 0 W 1500 TIME (ns) TIME (ns) 2000 tf 1000 tf tr 1000 0 td(on) tr 500 td(on) 4 5 6 7 8 9 100 10 1 10 100 VGS (V) 1000 10,000 RG (W) Figure 13. Resistive Load Switching Time vs. Gate−Source Voltage Figure 14. Resistive Load Switching Time vs. Gate Resistance (VGS = 5 V, ID = 2.6 A) 110 10,000 VDD = 40 V VDD = 15 V 100 RqJA (°C/W) TIME (ns) td(off) tf 1000 tr td(on) 100 1 90 PCB Cu thickness, 1.0 oz 80 70 60 10 100 1000 50 10,000 PCB Cu thickness, 2.0 oz 0 50 100 150 200 250 300 350 400 450 500 RG (W) COPPER HEAT SPREADER AREA (mm2) Figure 15. Resistive Load Switching Time vs. Gate Resistance (VGS = 10 V, ID = 2.6 A) Figure 16. RqJA vs. Copper Area 100 RqJA 788 mm2 C°/W 50% Duty Cycle 20% 10 10% 5% 2% 1 1% Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 17. Transient Thermal Resistance www.onsemi.com 7 1 10 100 1000 NCV8440, NCV8440A ORDERING INFORMATION Package Shipping† NCV8440STT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NCV8440ASTT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NCV8440STT3G SOT−223 (Pb−Free) 4000 / Tape & Reel NCV8440ASTT3G SOT−223 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 8 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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