NCV8450STT3G

NCV8450, NCV8450A Self-Protected High Side Driver with Temperature and Current Limit The NCV8450/A is a fully protected High−Side Smart Discrete device with a typical RDS(on) of 1.0 W and an internal current limit of 0.8 A typical. The device can switch a wide variety of resistive, inductive, and capacitive loads. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • • Short Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching Loss of Ground Protection ESD Protection Slew Rate Control for Low EMI Very Low Standby Current NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−223 (TO−261) CASE 318E XXXXX A Y W G AYW XXXXXG G 1 = V8450 or 8450A = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Typical Applications • Automotive • Industrial PRODUCT SUMMARY Symbol Characteristics VIN_CL Overvoltage Protection VD(on) Operation Voltage Ron On−State Resistance © Semiconductor Components Industries, LLC, 2015 October, 2018 − Rev. 6 Value Unit 54 V 4.5 − 45 V 1.0 W 1 Publication Order Number: NCV8450/D NCV8450, NCV8450A VD (Pins 2, 4) Regulated Charge Pump Output Clamping Control Logic IN (Pin 1) R_IN OUT (Pin 3) Current Limitation Overtemperature Detection Figure 1. Block Diagram PACKAGE PIN DESCRIPTION Pin # Symbol Description 1 IN Control Input, Active Low 2 VD Supply Voltage 3 OUT 4 VD Output Supply Voltage www.onsemi.com 2 NCV8450, NCV8450A MAXIMUM RATINGS Value Rating Symbol Min Max Unit VD −16 45 V 85 V 15 mA Internally Limited A DC Supply Voltage (Note 1) Load Dump Protection (RI = 2 W, td = 400 ms, VIN = 0, 10 V, IL = 150 mA, Vbb = 13.5 V) VLoaddump Input Current Iin Output Current (Note 1) Iout Total Power Dissipation @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) −15 PD W 1.13 1.60 Electrostatic Discharge (Note 4) (Human Body Model (HBM) 100 pF/1500 W) Input All other kV 1 5 Single Pulse Inductive Load Switching Energy (Note 4) (VDD = 13.5 V, I = 465 mApk, L = 200 mH, TJStart = 150°C) EAS Operating Junction Temperature Storage Temperature 29 mJ TJ −40 +150 °C Tstorage −55 +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. 2. Minimum Pad. 3. 1 in square pad size, FR−4, 1 oz Cu. 4. Not subjected to production testing. THERMAL RESISTANCE RATINGS Parameter Thermal Resistance (Note 5) Junction−to−Ambient (Note 2) Junction−to−Ambient (Note 3) Symbol Max Value RqJA RqJA 110 78.3 5. Not subjected to production testing. − + ID VD IIN IN OUT VOUT NCV8450/A Figure 2. Applications Test Circuit www.onsemi.com 3 Unit K/W NCV8450, NCV8450A ELECTRICAL CHARACTERISTICS (6 v VD v 45 V; −40°C 20 V 0.6 10 100 Input Current – Off State IIN_OFF VOUT v 0.1 V, RL = 270 W, TJ = 25°C VOUT v 0.1V, RL = 270 W, TJ = 150°C (Note 6) Input Current – On State (Pin 1 Grounded) IIN_ON 1.5 Input Resistance (Note 6) RIN 1 Standby Current (Pin 1 Open) 4.5 mA INPUT CHARACTERISTICS −50 −40 mA 3 mA kW SWITCHING CHARACTERISTICS Turn−On Time (Note 7) (VIN = VD to 0 V) to 90% VOUT tON RL = 270 W (Note 6) VD = 13.5 V, RL = 270 W, TJ = 25°C 30 125 100 ms Turn−Off Time (Note 7) (VIN = 0 V to VD ) to 10% VOUT tOFF RL = 270 W (Note 6) VD = 13.5 V, RL = 270 W, TJ = 25°C 60 175 150 ms Slew Rate On (Note 7) (VIN = VD to 0V) 10% to 30% VOUT dV/dtON RL = 270 W (Note 6) VD = 13.5 V, RL = 270 W, TJ = 25°C 0.7 4 4 V/ms Slew Rate Off (Note 7) (VIN = 0 V to VD) 70% to 40% VOUT dV/dtOFF RL = 270 W (Note 6) VD = 13.5 V, RL = 270 W, TJ = 25°C 0.9 4 4 V/ms 0.6 OUTPUT DIODE CHARACTERISTICS (Note 6) Drain−Source Diode Voltage VF IOUT = −0.2 A Continuous Reverse Drain Current IS TJ = 25°C V 0.2 A − °C PROTECTION FUNCTIONS (Note 8) Temperature Shutdown (Note 6) Temperature Shutdown Hysteresis (Note 6) Output Current Limit TSD 150 TSD_HYST ILIM 175 5 TJ = −40°C, VD = 13.5 V, tm = 100 ms (Note 6) TJ = 25 °C, VD = 13.5 V, tm = 100 ms TJ = 150 °C , VD = 13.5 V, tm = 100 ms (Note 6) 0.5 0.8 °C 1.5 A Output Clamp Voltage (Inductive Load Switch Off) At VOUT = VD − VCLAMP VCLAMP IOUT = 4 mA 45 52 V Overvoltage Protection VIN_CL ICLAMP = 4 mA 50 54 V 6. Not subjected to production testing 7. Only valid with high input slew rates 8. Protection functions are not designed for continuous repetitive operation and are considered outside normal operating range www.onsemi.com 4 NCV8450, NCV8450A TYPICAL CHARACTERISTIC CURVES 2.0 1.8 1.0 Iout = 150 mA 0.95 1.6 1.2 RDS(on) (W) RDS(on) (W) 1.4 VD = 6 V 1.0 0.8 VD = 15 V 0.6 0.85 0.8 VD = 9 V 0.75 0.7 0.4 0.65 0.2 0 −40 VD = 6 V 0.9 −20 0 20 40 60 80 100 TEMPERATURE (°C) 120 0.6 140 TA = 25°C 0 0.1 80 4.5 70 TURN ON TIME (ms) 4.0 RDS(on) (W) 3.5 125°C 25°C 150°C 2.0 −40°C 1.5 1.0 0 0 10 20 30 40 VD = 42 V 50 40 VD = 13.5 V 30 20 VD = 9 V 1.2 SLEW RATE (ON) (V/ms) 120 VD = 42 V 80 VD = 13.5 V 60 VD = 9 V 40 20 −20 0 20 40 60 80 100 0 20 40 60 80 100 120 140 Figure 6. Turn On Time vs. Temperature RLOAD = 270 W 100 −20 TEMPERATURE (°C) Figure 5. RDS(on) vs. VD TURN OFF TIME (ms) RLOAD = 270 W 60 0 −40 50 VD (V) 0 −40 0.5 10 0.5 140 0.4 Figure 4. RDS(on) vs. Output Load 5.0 2.5 0.3 OUTPUT LOAD (A) Figure 3. RDS(on) vs. Temperature 3.0 0.2 120 1.0 VD = 42 V 0.8 VD = 13.5 V 0.6 VD = 9 V 0.4 0.2 0 −40 140 RLOAD = 270 W −20 0 20 40 60 80 100 120 140 TEMPERATURE (°C) TEMPERATURE (°C) Figure 8. Slew Rate (ON) vs. Temperature Figure 7. Turn Off Time vs. Temperature www.onsemi.com 5 NCV8450, NCV8450A TYPICAL CHARACTERISTIC CURVES 1.4 VD = 13.5 V 1 0.8 1.2 VD = 42 V CURRENT LIMIT (A) SLEW RATE (OFF) (V/ms) 1.2 VD = 9 V 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0 −40 RLOAD = 270 W −20 0 20 40 60 80 100 120 0 −40 140 VD = 13.5 V −20 40 60 80 100 120 140 TEMPERATURE (°C) Figure 10. Current Limit vs. Temperature 70 VD, LEAKAGE CURRENT (mA) 1.0 TA = −40°C 0.8 25°C 0.6 125°C 0.4 150°C 0.2 0 0 10 30 20 VD = 45 V 50 40 30 20 10 0 −40 50 40 60 VD = 25 V VD = 15 V −20 VD, VOLTAGE (V) 0 20 40 60 80 100 TEMPERATURE (°C) 120 140 Figure 12. VD Leakage Current vs. Temperature Off−State Figure 11. Peak Short Circuit Current vs. VD Voltage 70 2.5 60 INPUT CURRENT (mA) VD, LEAKAGE CURRENT (mA) 20 TEMPERATURE (°C) 1.2 50 40 30 125°C −40°C 20 150°C 25°C 10 0 0 0 Figure 9. Slew Rate (OFF) vs. Temperature 1.4 PEAK SC CURRENT (A) 1 5 10 15 20 25 30 35 40 2.0 1.5 VD = 28 V VD = 15 V 1.0 VD = 6 V 0.5 0 −40 45 VD = 45 V −20 0 20 40 60 80 100 120 VD, VOLTAGE (V) TEMPERATURE (°C) Figure 13. VD Leakage Current vs. VD Voltage Off−State Figure 14. On−State Input Current vs. Temperature www.onsemi.com 6 140 NCV8450, NCV8450A TYPICAL CHARACTERISTIC CURVES 80 150°C 60 125°C 50 25°C 40 −40°C 10 OUTPUT VOLTAGE (V) INPUT CURRENT (mA) 70 12 Rout = 100 W 30 20 10 0 0 20 8.0 6.0 4.0 2.0 ROUT = 100 kW VIN = 0 V 0 0 40 1 2 3 VD, VOLTAGE (V) 8 9 900 8 800 150°C 7 6 700 5 CURRENT (mA) 125°C 25°C 4 3 −40°C 2 600 500 400 300 200 1 TA = 150°C VD = 20 V 100 0 5 0 50 10 15 20 25 30 35 40 45 50 55 60 65 VD, VOLTAGE (V) 100 Figure 17. Single Pulse Maximum Switch−off Current vs. Load Inductance 1000 VD = 13.5 V 100 VD = 24 V VD = 42 V 10 1 −40 −20 0 20 150 LOAD INDUCTANCE (mH) Figure 16. Input Current vs. VD Voltage On−State SHUTDOWN TIME (ms) INPUT CURRENT (mA) 7 Figure 15. Output Voltage vs. VD Voltage Figure 18. Input Current vs. VD Voltage Off−State 0 4 5 6 VD, VOLTAGE (V) 40 60 80 100 120 140 TEMPERATURE (°C) Figure 19. Initial Short−Circuit Shutdown Time vs. Temperature www.onsemi.com 7 10 NCV8450, NCV8450A TYPICAL CHARACTERISTIC CURVES 140 120 RqJA (°C/W) 100 PCB Cu thickness, 1.0 oz 80 60 PCB Cu thickness, 2.0 oz 40 20 0 300 400 500 600 100 200 COPPER HEAT SPREADER AREA (mm2) 0 700 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 20. RqJA vs. Copper Area 1000 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 Psi TSP−A(t) 0.001 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 PULSE TIME (s) Figure 21. Transient Thermal Response ISO PULSE TEST RESULTS Test Pulse Test Level Test Results Pulse Cycle Time and Generator Impedance 1 200 V C 500 ms, 10 W 2 150 V C 500 ms, 10 W 3a 200 V C 100 ms, 50 W 3b 200 V C 100 ms, 50 W 5 175 V E(100 V) 400 ms, 2 W ORDERING INFORMATION Package Shipping† NCV8450STT3G SOT−223 (Pb−Free) 4000 / Tape & Reel NCV8450ASTT3G SOT−223 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 8 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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