NCV8452STT3G

NCV8452 Self Protected High Side Driver with Temperature Shutdown and Current Limit The NCV8452 is a fully protected High−Side driver that can be used to switch a wide variety of loads, such as bulbs, solenoids and other activators. The device is internally protected from an overload condition by an active current limit and thermal shutdown. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • • • • Short Circuit Protection Thermal Shutdown with Automatic Restart CMOS (3 V/5 V) Compatible Control Input Overvoltage Protection and Shutdown Output Voltage Clamp for Inductive Switching Under Voltage Shutdown Loss of Ground Protection ESD Protection Reverse Battery Protection (with external resistor) Very Low Standby Current NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOT−223 (TO−261) CASE 318E V8452 A Y W G AYW V8452G G 1 = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Typical Applications • Switch a Variety of Resistive, Inductive and Capacitive Loads • Can Replace Electromechanical Relays and Discrete Circuits • Automotive / Industrial PRODUCT SUMMARY Symbol Characteristics VOV Overvoltage Protection VD Operation Voltage RON IILIM Value Unit 41 V 5 − 34 V On−State Resistance 200 mW Output Current Limit 1.0 A © Semiconductor Components Industries, LLC, 2016 October, 2018 − Rev. 6 1 Publication Order Number: NCV8452/D NCV8452 VD (Pin 4) Overvoltage Shutdown Overvoltage Protection Undervoltage Shutdown Regulated Chargepump ESD IN (Pin 3) Output Clamping Input Buffer Control Logic Pre Driver Temperature Sensor OUT (Pin 1) Current Limitation GND (Pin 2) Overtemperature Shutdown Figure 1. Block Diagram PACKAGE PIN DESCRIPTION Pin # Symbol Description 1 OUT Output 2 GND Ground 3 IN Logic Level Input 4 VD Supply Voltage ID VD IIN IOUT VD OUT IN GND VIN VOUT IGND Figure 2. Voltage and Current Definition www.onsemi.com 2 NCV8452 MAXIMUM RATINGS Rating Symbol Value Unit VD 40 V Vpeak 51 V Input Voltage VIN −5 to VD V Input Current IIN ±5 mA IOUT Internally Limited A DC Supply Voltage Peak Transient Input Voltage (Load Dump 37.5 V, VD = 13.5 V, ISO7637−2 pulse5) (Note 1) Output Current Power Dissipation @TA = 25°C (Note 3) @TA = 25°C (Note 4) PD Electrostatic Discharge (Note 1) (HBM Model 100 pF / 1500 W) Input Output VD 1.19 1.76 W kV ±1 ±5 ±5 Single Pulse Inductive Load Switch Off Energy (Note 1) (L = 4.55 H, VD = 13.5 V; IL = 0.5 A, TJstart = 25°C) Operating Junction Temperature Storage Temperature EAS 0.8 J TJ −40 to +150 °C Tstorage −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Not subjected to production testing 2. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. 3. Minimum pad. 4. 1 in square pad size, FR−4, 1 oz Cu. THERMAL RESISTANCE RATINGS Parameter Thermal Resistance (Note 5) Junction−to−Soldering Point Junction−to−Ambient (Note 6) Junction−to−Ambient (Note 7) Symbol Max Value Unit RthJS RthJA RthJA 10 105 71 °C/W °C/W °C/W 5. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. 6. Minimum pad. 7. 1 in square pad size, FR−4, 1 oz Cu. www.onsemi.com 3 NCV8452 ELECTRICAL CHARACTERISTICS (VD = 13.5 V; −40°C < TJ < 150°C unless otherwise specified) Value Rating Symbol Conditions Min Typ Max Unit − 34 V 5.5 V 6.0 V 42 V Operating Supply Voltage VD 5 Undervoltage Shutdown VUV 2.5 Undervoltage Restart VUV(res) Undervoltage Hysteresis VUV(hyst) Overvoltage Shutdown 0.3 VOV 34 Overvoltage Restart VOV(res) 33 On−state Resistance RON IOUT = 0.5 A, VIN = 5 V, TJ = 25°C IOUT = 0.5 A, VIN = 5 V, TJ = 150°C 160 − 200 400 mW Standby Current ID(off) VIN = VOUT = 0 V 12 25 mA Active Ground Current IGND(on) VIN = 5 V 1 1.8 mA Output Leakage Current IOUT(off) VIN = 0 V 2 mA 0.8 V INPUT CHARACTERISTICS Input Voltage − Low VIN(low) Input Voltage − High VIN(high) 2.2 V Off State Input Current IIN(off) VIN = 0.7 V 10 mA On State Input Current IIN(on) VIN = 5.0 V 10 mA Input Threshold Hysteresis Input Resistance VIN(hyst) 0.3 RI 1.5 V 2.8 3.5 kW ms SWITCHING CHARACTERISTICS Turn−On Time ton to 90% VOUT, RL = 24 W 60 120 Turn−Off Time toff to 10% VOUT, RL = 24 W 60 120 ms Slew Rate On dVOUT/dton 10% to 30% VOUT, RL = 24 W 1 4 V / ms Slew Rate Off dVOUT/dtoff 70% to 40% VOUT, RL = 24 W 1 4 V / ms Reverse Battery −VD Requires a 150 W Resistor in GND Connection 32 V Forward Voltage VF TJ = 150°C REVERSE BATTERY (Note 8) 0.6 V PROTECTION FUNCTIONS (Note 9) Temperature Shutdown (Note 8) Temperature Shutdown Hysteresis (Note 8) Overvoltage Protection TSD 150 TSD(hyst) 175 200 10 VOV ID = 4 mA 41 Switch Off Output Clamp Voltage VCLAMP ID = 4 mA, VIN = 0 V VD − 41 VD − 47 Output Current Limit Initial Peak ILIM VD = 20 V, TJ = 25°C TJ = −40°C to150°C 1.0 1.8 − °C °C V V 3 A 8. Not subjected to production testing 9. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper hardware/software strategy. If the devices operates under abnormal conditions this hardware/software solutions must limit the duration and number of activation cycles. www.onsemi.com 4 NCV8452 VBAT VDD VDD Micro Controller VD OUT NCV8452 IN OUT GND VSS Load RGND Figure 3. Application Diagram VIN t ton VOUT toff 90% 70% dVOUT/dtoff dVOUT/dton 40% 30% 10% 10% Figure 4. Resistive Load Switching Waveform www.onsemi.com 5 t NCV8452 TYPICAL CHARACTERISTIC CURVES 20 18 25°C 16 14 150°C −40°C 12 VD = 13.5 V 12 ID(off) (mA) ID(off) (mA) 100°C VD = 35 V 16 8 10 8 VD = 5 V 6 4 0 4 2 VIN = VOUT = 0 V 5 0 10 15 20 25 30 25 50 75 100 125 150 175 Figure 6. Standby Current vs. Junction Temperature 1.2 VIN = VOUT = 0 V 150°C IOUT(off) (mA) −40°C 0.4 25°C 0.2 0 100 5 10 0.8 VD = 35 V 0.6 0.4 VD = 13.5 V 0.2 15 20 25 30 35 0 −50 40 −25 0 25 50 75 100 125 150 175 VD (V) TJ (°C) Figure 7. Output Leakage Current vs. Supply Voltage Figure 8. Output Leakage Current vs. Junction Temperature 6 VD = 13.5 V 90 VIN = VOUT = 0 V 1 100°C 0.6 IIN(on) 5 80 IIN(off), IIN(on) (mA) 150°C 70 60 50 100°C 40 25°C 30 20 0 2 4 6 8 VIN (V) 10 12 4 3 0 −50 14 IIN(off) 2 1 −40°C 10 0 0 Figure 5. Standby Current vs. Supply Voltage 0.8 0 −25 TJ (°C) 1 IOUT(off) (mA) 40 VD (V) 1.2 IIN (mA) 35 VIN = VOUT = 0 V 0 −50 Figure 9. Input Current vs. Input Voltage VD = 13.5 V VIN(off) = 0.7 V VIN(on) = 5 V −25 0 25 50 75 TJ (°C) 100 125 150 175 Figure 10. Input Current vs. Junction Temperature www.onsemi.com 6 NCV8452 TYPICAL CHARACTERISTIC CURVES 2.0 1.8 2.0 −40°C VIN = 5 V 1.6 25°C IGND(on) (mA) IGND(on) (mA) 1.4 1.2 1.0 100°C 0.8 0.6 150°C 0.4 1.2 VD = 13.5 V 1.0 0.8 0.6 0.4 0.2 VD = 5 V 0.2 0 5 10 15 20 25 30 35 0 −50 40 0 25 50 75 100 125 150 175 VD (V) Figure 11. Active Ground Current vs. Supply Voltage Figure 12. Active Ground Current vs. Junction Temperature 0.3 0.25 2 VIN(hyst) (V) Turn On 1.5 Turn Off 1 0.5 0.2 0.15 0.1 0.05 VD = 13.5 V −25 0 25 50 75 100 125 0 −50 150 175 −25 0 25 50 75 100 125 150 175 TJ (°C) TJ (°C) Figure 13. Input Threshold Voltage vs. Junction Temperature Figure 14. Input Threshold Hysteresis vs. Junction Temperature 2 VIN(th) (V) 0 −50 −25 TJ (°C) 2.5 VIN(th) (V) VD = 35 V 1.6 1.4 0 VIN = 5 V 1.8 1.75 Turn ON 1.5 Turn OFF 1.25 1 0.75 0.5 0.25 0 0 5 10 15 20 25 30 35 VD (V) Figure 15. Input Threshold Voltage vs. Supply Voltage www.onsemi.com 7 40 NCV8452 TYPICAL CHARACTERISTIC CURVES 5 0.35 VUV(res) 4.5 0.3 VUV 3.5 0.25 VUV(hyst) (V) VUV, VUV(res) (V) 4 3 2.5 2 1.5 0.2 0.15 0.1 1 0.05 0.5 0 −50 VIN = 5 V −25 0 25 50 75 TJ (°C) 100 125 0 −50 150 175 Figure 16. Under Voltage Shutdown and Restart vs. Junction Temperature −25 0 25 50 75 TJ (°C) 100 125 150 175 Figure 17. Under Voltage Shutdown Hysteresis vs. Junction Temperature 45 1 VOV 40 0.9 VOV(res) 35 0.8 0.7 30 VOV(hyst) (V) VOV, VOV(res) (V) VIN = 5 V 25 20 15 10 0.6 0.5 0.4 0.3 0.2 5 0 −50 0.1 VIN = 5 V −25 0 25 50 75 TJ (°C) 100 125 VIN = 5 V 0 −50 −25 0 150 175 Figure 18. Over Voltage Shutdown vs. Junction Temperature 50 48 VIN = 0 V ID = 4 mA 100°C 150°C 50 75 TJ (°C) 100 125 150 175 Figure 19. Over Voltage Shutdown Hysteresis vs. Junction Temperature 50 VIN = 0 V ID = 4 mA 25 48 VD = 13.5 V 46 25°C VCLAMP (V) VCLAMP (V) VD = 35 V −40°C 44 42 40 46 VD = 5 V 44 42 0 5 10 15 20 25 30 35 40 −50 40 VD (V) 50 75 TJ (°C) Figure 20. Output Clamp Voltage vs. Supply Voltage Figure 21. Output Clamp Voltage vs. Junction Temperature www.onsemi.com 8 −25 0 25 100 125 150 175 NCV8452 TYPICAL CHARACTERISTIC CURVES 450 350 VIN = 5 V IOUT = 0.5 A 400 350 250 RON (mW) RON (mW) 250 150°C 300 100°C 200 25°C 150 5 10 15 20 25 30 35 0 −50 40 150°C ILIM (A) RON (mW) 100 125 150 175 1.5 100°C 0.5 VIN = 5 V VD = 13.5 V 0.75 1 1.25 150°C 1.0 −40°C 0.5 25°C 2.0 25°C 0.25 −40°C 2.5 100°C 100 1.5 0 1.75 VIN = 5 V VOUT = 0 V 0 5 10 15 20 25 30 35 OUTPUT CURRENT (A) VD (V) Figure 24. On−state Resistance vs. Output Current Figure 25. Current Limit vs. Supply Voltage 140 3.0 VD = 35 V 40 RL = 24 W −40°C 120 VD = 13.5 V 100 ton (ms) 2.0 ILIM (A) 75 3.0 150 1.5 VD = 5 V 1.0 0 −50 50 TJ (°C) 200 0.5 25 Figure 23. On−state Resistance vs. Junction Temperature 250 2.5 0 VD (V) 300 0 0 −25 Figure 22. On−state Resistance vs. Supply Voltage 350 50 150 50 50 0 0 200 100 −40°C 100 VIN = 5 V VD = 13.5 V IOUT = 0.5 A 300 100°C 80 150°C 60 40 −25 0 25°C 20 VIN = 5 V VOUT = 0 V 25 50 75 100 125 0 150 175 0 5 10 15 20 25 30 35 TJ (°C) VD (V) Figure 26. Current Limit vs. Junction Temperature Figure 27. Turn−On Time vs. Supply Voltage www.onsemi.com 9 40 NCV8452 TYPICAL CHARACTERISTIC CURVES 80 70 60 dVOUT / dton (V/ms) 25°C 40 30 100°C 150°C 20 0 3 5 10 15 20 25 30 35 0.8 100°C 0.6 0.4 0 40 0 5 10 15 20 25 30 35 VD (V) Figure 29. Slew Rate On vs. Supply Voltage 40 140 RL = 24 W 150°C 100 100°C 2 VD = 5 V 120 1.5 ton (ms) −dVOUT / dtoff (V/ms) 150°C 1 VD (V) −40°C 1 80 VD = 35 V 60 VD = 13.5 V 40 25°C 0.5 20 0 5 10 15 20 25 70 30 35 40 25 50 75 100 125 150 175 Figure 31. Turn−On vs. Junction Temperature 1.6 RL = 24 W VD = 13.5 V VD = 35 V VD = 5 V 30 20 0 25 50 75 TJ (°C) 100 125 1 0.8 0.6 VD = 13.5 V 0.4 0 −50 150 175 VD = 35 V 1.2 0.2 −25 RL = 24 W 1.4 10 0 −50 0 Figure 30. Slew Rate Off vs. Supply Voltage dVOUT / dton (V/ms) 40 −25 TJ (°C) 60 50 RL = 24 W 0 −50 VD (V) 80 toff (ms) 1.2 Figure 28. Turn−Off Time vs. Supply Voltage 2.5 0 25°C −40°C 0.2 10 0 RL = 24 W 1.4 −40°C 50 toff (ms) 1.6 RL = 24 W Figure 32. Turn−Off Time vs. Junction Temperature VD = 5 V −25 0 25 50 75 TJ (°C) 100 125 150 175 Figure 33. Slew Rate On vs. Junction Temperature www.onsemi.com 10 NCV8452 TYPICAL CHARACTERISTIC CURVES 3 1.0 RL = 24 W 0.8 100°C 2 −IGND (A) −dVOUT / dtoff (V/ms) 150°C VD = 35 V 2.5 1.5 VD = 13.5 V 1 0 −50 −25 0 25 50 75 100 125 0.4 25°C −40°C VD = 5 V 0.5 0.6 0.2 0 150 175 0 0.2 0.4 0.6 0.8 1.0 TJ (°C) −VD (V) Figure 34. Slew Rate Off vs. Junction Temperature Figure 35. Supply−to−Ground Reverse Characteristics 1.2 10 5.0 VD = 13.5 V, RL = 0 W 4.5 150°C 4.0 3.0 IL (A) −IOUT (A) 3.5 100°C 2.5 2.0 1.5 TJstart = 25°C 1 TJstart = 150°C −40°C 25°C 1.0 0.5 0 0 0.2 0.4 0.6 0.8 VOUT − VD (V) 1.0 0.1 10 1.2 1000 TJstart = 25°C 100 EAS (mJ) TJstart = 150°C 10 1 1 10 100 10000 Figure 37. Single Pulse Maximum Switch Off Current vs. Load Inductance SHUTDOWN TIME (ms) VD = 13.5 V, RL = 0 W 1000 L (mH) Figure 36. Power FET Body Forward Characteristics 1000 100 1000 100 TJstart = −40°C 10 1 0.1 10000 RL = 0 W No heatsink attached TJstart = 25°C TJstart = 150°C TJstart = 100°C 0 5 10 15 20 VD (V) L (mH) Figure 38. Single Pulse Maximum Switch Off Energy vs. Load Inductance 25 30 35 Figure 39. Initial Short−Circuit Shutdown Time vs. Supply Voltage www.onsemi.com 11 40 NCV8452 140 RL = 0 W No heatsink attached 100 120 VD = 13.5 V 10 VD = 24 V 1 1.0 oz 100 RthJA (°C/W) SHUTDOWN TIME (ms) 1000 80 2.0 oz 60 40 VD = 34 V 20 0.1 −50 −25 0 25 50 75 100 125 0 150 175 0 TJstart (°C) 100 200 300 400 500 600 COPPER HEAT SPREADER AREA (mm2) 700 Figure 41. Junction−to−Ambient Thermal Resistance vs. Copper Area Figure 40. Initial Short−Circuit Shutdown Time vs. Starting Junction Temperature 1000 Z(t)JA (°C/W) 100 10 1 Duty Cycle = 0.5 0.2 0.1 0.02 0.05 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 42. Junction−to−Ambient Transient Thermal Impedance (minimum pad size) ORDERING INFORMATION Package Shipping† NCV8452STT1G SOT−223 (Pb−Free) 1000 / Tape & Reel NCV8452STT3G SOT−223 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 12 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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