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NCV8512PW50G

NCV8512PW50G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOW-16_10.3X7.5MM-EP

  • 描述:

    IC REG LINEAR 5V 150MA 16SOIC

  • 详情介绍
  • 数据手册
  • 价格&库存
NCV8512PW50G 数据手册
NCV8512 5.0 V Micropower 150 mA LDO Linear Regulator with DELAY, Adjustable RESET, and Monitor FLAG The NCV8512 is a 5.0 V precision micropower voltage regulator. The output current capability is 150 mA. The output voltage is accurate within ±2.0% with a maximum dropout voltage of 0.6 V at 150 mA. Low quiescent current is a feature drawing only 130 mA with a 100 mA load. This part is ideal for any and all battery operated microprocessor equipment. Microprocessor control logic includes an active RESET (with DELAY), and a FLAG monitor which can be used to provide an early warning signal to the microprocessor of a potential impending RESET signal. The use of the FLAG monitor allows the microprocessor to finish any signal processing before the RESET shuts the microprocessor down. The active RESET circuit operates correctly at an output voltage as low as 1.0 V. The RESET function is activated during the power up sequence or during normal operation if the output voltage drops outside the regulation limits. The reset threshold voltage can be decreased by the connection of an external resistor divider to RADJ lead. The regulator is protected against reverse battery, short circuit, and thermal overload conditions. The device can withstand load dump transients making it suitable for use in automotive environments. Features • • • • • • • • • • • • 5.0 V ± 2.0% Output Low 130 mA Quiescent Current Active RESET Adjustable Reset 150 mA Output Current Capability Fault Protection − +60 V Peak Transient Voltage − −15 V Reverse Voltage − Short Circuit − Thermal Overload Early Warning through FLAG/MON Leads Thermally Enhanced in SOW−16 Exposed Pad NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes AEC Qualified PPAP Capable These are Pb−Free Devices © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 3 1 http://onsemi.com MARKING DIAGRAM 16 16 1 SOIC 16 LEAD WIDE BODY EXPOSED PAD PW SUFFIX CASE 751AG A WL YY WW G NCV8512 AWLYYWWG 1 = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Device PIN CONNECTIONS* NC VOUT NC NC NC NC VIN MON 1 16 FLAG RESET NC GND NC NC DELAY RADJ *Pin connections for reference only. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Publication Order Number: NCV8512/D NCV8512 VIN VOUT VDD RADJ1 10 mF 10 mF RADJ RADJ2 NCV8512 Delay RM1 RFLG 10 k Microprocessor VBAT RRST 10 k MON RM2 CDELAY FLAG RESET I/O GND I/O Figure 1. Application Diagram MAXIMUM RATINGS† Rating Value Unit −15 to 45 V Peak Transient Voltage (46 V Load Dump @ VIN = 14 V). Voltage with respect to ground. 60 V Operating Voltage 45 V VOUT (DC) 16 V Voltage Range (RESET, FLAG) −0.3 to 10 V Input Voltage Range (MON) −0.3 to 10 V VDELAY −0.3 to 4.0 V VRADJ −0.3 to 10 V 2.0 kV Junction Temperature, TJ −40 to +150 °C Storage Temperature, TS −55 to 150 °C VIN (DC) ESD Susceptibility (Human Body Model) Package Thermal Resistance, SOW−16 E Pad: Junction−to−Case, RqJC Junction−to−Ambient, RqJA Lead Temperature Soldering: 16 57 Reflow: (SMD styles only) (Notes 1, 2. and 3) Moisture Sensitivity Level at 260°C 265 peak °C/W °C 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †During the voltage range which exceeds the maximum tested voltage of VIN, operation is assured, but not specified. Wider limits may apply. Thermal dissipation must be observed closely. 1. 60 second maximum above 217°C. 2. −5°C/+0°C allowable conditions. 3. Per IPC/JEDEC J−STD−020C. http://onsemi.com 2 NCV8512 ELECTRICAL CHARACTERISTICS (IOUT = 1.0 mA, −40°C ≤ TJ ≤ 125°C; 6.0 V < VIN < 26 V; unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit 4.90 4.85 5.0 5.0 5.10 5.15 V V − − 400 100 600 150 mV mV -30 5.0 30 mV OUTPUT STAGE Output Voltage 9.0 V < VIN < 16 V, 100 mA ≤ IOUT ≤ 150 mA 6.0 V < VIN < 26 V, 100 mA ≤ IOUT ≤ 150 mA Dropout Voltage (VIN − VOUT) IOUT = 150 mA IOUT = 1.0 mA Load Regulation VIN = 14 V, 5.0 mA ≤ IOUT ≤ 150 mA Line Regulation [VOUT(typ) + 1.0] < VIN < 26 V, IOUT = 1.0 mA − 15 60 mV Quiescent Current, (IQ) Active Mode IOUT = 100 mA, VIN = 12 V, Delay = 3.0 V, MON = 3.0 V IOUT = 75 mA, VIN = 14 V, Delay = 3.0 V, MON = 3.0 V IOUT ≤ 150 mA, VIN = 14 V, Delay = 3.0 V, MON = 3.0 V − − − 130 4.0 12 200 6.0 19 mA mA mA − 151 300 − mA Current Limit Short Circuit Output Current VOUT = 0 V 40 190 − mA Thermal Shutdown (Guaranteed by Design) 150 180 − °C RESET Threshold HIGH (VRH) LOW (VRL) VOUT Increasing VOUT Decreasing 4.55 4.50 4.70 4.60 0.98 × VOUT 0.97 × VOUT V V Output Voltage Low (VRLO) 1.0 V ≤ VOUT ≤ VRL, RRESET = 10 k − 0.1 0.4 V RESET FUNCTION (RESET) Delay Switching Threshold (VDT) − 1.4 1.8 2.2 V Lower Delay Switching Threshold (VLD) − 0.3 0.45 0.6 V − − 0.1 V Reset Delay Low Voltage VOUT < RESET Threshold Low(min) Delay Charge Current DELAY = 1.0 V, VOUT > VRH 6.0 9.0 15 mA Delay Discharge Current DELAY = 1.0 V, VOUT = 1.5 V 5.0 − − mA 1.23 1.31 1.39 V 1.10 1.20 1.31 V 20 50 100 mV −0.5 0.1 0.5 mA − 0.1 0.4 V Reset Adjust Switching Voltage (VR(ADJ)) − FLAG/MONITOR Monitor Threshold Increasing and Decreasing Hysteresis − Input Current MON = 2.0 V Output Saturation Voltage MON = 0 V, IFLAG = 1.0 mA http://onsemi.com 3 NCV8512 PACKAGE PIN DESCRIPTION Package Pin Number SOW−16 Exposed Pad Pin Symbol 1, 3−6, 11, 12, 14 NC 2 VOUT 7 VIN 8 MON Monitor. Input for early warning comparator. If not needed connect to VOUT. 9 RADJ Reset Adjust. If not needed connect to ground. 10 DELAY 13 GND 15 RESET 16 FLAG Function No connection. ±2.0%, 150 mA output. Input Voltage. Timing capacitor for RESET function. Ground. All GND leads must be connected to Ground. Active reset (accurate to VOUT ≥ 1.0 V). Open collector output from early warning comparator. TYPICAL PERFORMANCE CHARACTERISTICS 5.01 1.2 VOUT = 5.0 V VIN = 14 V IOUT = 5.0 mA VIN = 12 V 1.0 5.00 +125°C IQ (mA) VOUT (V) 0.8 4.99 +25°C 0.6 −40°C 0.4 0.2 4.98 −40 −25 −10 5 20 35 50 65 Temperature (°C) 80 0 95 110 125 Figure 2. Output Voltage vs. Temperature 14 5 10 15 IOUT (mA) 20 7 VIN = 12 V T = 25°C 6 10 IQ (mA) +25°C 6 −40°C 4 4 3 1 0 0 15 30 45 60 75 90 IOUT (mA) IOUT = 50 mA 2 2 0 IOUT = 100 mA 5 +125°C 8 25 Figure 3. Quiescent Current vs. Output Current 12 IQ (mA) 0 105 120 135 140 IOUT = 10 mA 6 8 10 12 14 16 18 VIN (V) 20 22 24 Figure 5. Quiescent Current vs. Input Voltage Figure 4. Quiescent Current vs. Output Current http://onsemi.com 4 26 NCV8512 TYPICAL PERFORMANCE CHARACTERISTICS 150 450 IOUT = 100 mA 400 Dropout Voltage (mV) 145 IQ (mA) 140 T = 25°C 135 130 125 120 350 300 +125°C 250 +25°C −40°C 200 150 100 50 6 10 14 18 22 0 26 0 25 50 VIN (V) Figure 6. Quiescent Current vs. Input Voltage 75 IOUT (mA) 100 125 150 Figure 7. Dropout Voltage vs. Output Current 1000 1000 Unstable Region Unstable Region CVOUT = 10 mF 100 CVOUT = 0.1 mF ESR (W) ESR (W) 100 10 10 1 Stable Region Stable Region 0.1 1 CVOUT = 10 mF 0.01 0 10 20 30 40 50 60 70 80 90 100110120130140150 OUTPUT CURRENT (mA) 0 10 20 30 40 50 60 70 80 90 100 110 OUTPUT CURRENT (mA) Figure 8. Output Capacitor ESR Figure 9. Output Stability with Output Capacitor Change http://onsemi.com 5 NCV8512 VOUT VIN Current Source (Circuit Bias) IBIAS Current Limit Sense + + − RADJ IBIAS + − VBG RESET + − VBG 1.8 V Thermal Protection 3.0 mA Delay Error Amplifier IBIAS Bandgap Reference VBG VBG IBIAS + − MON Figure 10. Block Diagram http://onsemi.com 6 GND FLAG NCV8512 CIRCUIT DESCRIPTION VIN RESET Threshold VOUT 1.8V VDT 0.45V VLD DELAY RESET Td Td Power on Reset Input Under−voltage V Dip Secondary Output Spike Overload Figure 11. Reset and Delay Circuit Wave Forms REGULATOR CONTROL FUNCTIONS The NCV8512 contains a microprocessor−compatible control function RESET (Figure 11). If the reset adjust option is not needed, the RADJ pin should be connected to GND causing the reset threshold to go to its default value (4.65 V typical). As an example, select resistors to give a threshold voltage of 4.0 V. This will allow the delay timer to start when the output crosses the 4.0 V level. VTHRES = 4.0 V = 1.31 V x (RADJ1 + RADJ2) / RADJ2 Let RADJ2 be 100 kW for low current consumption. RADJ1 = 2.05 x 100 k = 205 kW With 5 V on the output, the voltage on the RADJ pin will be 1.64 V. RESET Function A RESET signal (low voltage) is generated as the IC powers up. After VOUT increases above the RESET threshold, the DELAY timer is started. When the DELAY timer passes 1.8 V, the RESET signal goes high. A discharge of the DELAY timer is started when VOUT drops and stays below the RESET threshold. When the DELAY timer level drops below 0.45 V, the RESET signal is brought low. The RESET output is an open collector NPN transistor, controlled by a low voltage detection circuit. The circuit is functionally independent of the rest of the IC thereby guaranteeing that the RESET signal is valid for VOUT as low as 1.0 V. NCV8512 The reset threshold VRL can be decreased from a typical value of 4.65 V to as low as 3.5 V by using an external voltage divider connected from VOUT to the pin RADJ as displayed in Figure 12. The resistor divider keeps the voltage above the VRADJ.TH (typical 1.31 V) and overrides the internal threshold detector. Adjust the voltage divider according to the following relationship: VTHRES + VRADJ.TH VOUT RADJ RADJ2 Adjustable Reset Function RADJ1 ) RADJ2 RADJ2 to mP and System Power RADJ1 Delay RRST RESET CDELAY 6.4 V COUT to mP and RESET Port Figure 12. Adjustable RESET (2) DELAY Function Where; VTHRES is the desired output threshold voltage that starts the time delay for Power on Reset Delay. VRADJ.TH is the default threshold voltage of 1.31 V typ. RADJ1 is the resistor connected from the 5 V output to the RADJ pin. RADJ2 is the resistor connected from the RADJ pin to ground. The reset delay circuit provides a delay (programmable by external capacitor) on the RESET output lead. The DELAY lead provides source current (typically 9 mA) to the external DELAY capacitor at the following times: 1. During Power Up (once the regulation threshold has been exceeded). http://onsemi.com 7 NCV8512 trip point can be programmed externally using a resistor divider to the input monitor (MON) (Figure 13). The typical threshold is 1.20 V on the MON Pin. 2. After a reset event has occurred and the device is back in regulation. The DELAY capacitor is discharged when the regulation (RESET threshold) has been violated. When the DELAY capacitor discharges to 0.45 V, the RESET signal pulls low. VBAT FLAG/Monitor Function MON VCC RFLG NCV8512 RM1 An on−chip comparator is available to provide an early warning to the microprocessor of a possible reset signal. The reset signal typically turns the microprocessor off instantaneously. This can cause unpredictable results with the microprocessor. The signal received from the FLAG pin will allow the microprocessor time to complete its present task before shutting down. This function is performed by a comparator referenced to the bandgap voltage. The actual VOUT VIN I/O FLAG RM2 mP COUT RRST RADJ RESET Delay GND RESET Figure 13. FLAG/Monitor Function APPLICATION NOTES FLAG MONITOR Figure 14 shows the FLAG Monitor waveforms taken from the circuit depicted in Figure 13. As the output voltage falls (VOUT), the Monitor threshold is crossed. This causes the voltage on the FLAG output to go low sending a warning signal to the microprocessor that a RESET signal may occur in a short period of time. TWARNING is the time the microprocessor has to complete the function it is currently working on and get ready for the RESET shutdown signal. Use the typical value for VDT = 1.8 V. Use the typical value for Delay Charge Current = 9.0 mA. tDELAY + 9.0 mA + 6.45 ms STABILITY CONSIDERATIONS The output or compensation capacitor helps determine three main characteristics of a linear regulator: startup delay, load transient response and loop stability. The capacitor value and type should be based on cost, availability, size and temperature constraints. A tantalum or aluminum electrolytic capacitor is best, since a film or ceramic capacitor with almost zero ESR can cause instability. The aluminum electrolytic capacitor is the least expensive solution, but, if the circuit operates at low temperatures (−25°C to −40°C), both the value and ESR of the capacitor will vary considerably. The capacitor manufacturer’s data sheet usually provides this information. The value for the output capacitor COUT shown in Figure 15 should work for most applications, but is not necessarily the optimized solution. VOUT MON FLAG Monitor Ref. Voltage RESET FLAG VIN VOUT CIN* 0.1 mF TWARNING Figure 14. FLAG Monitor Circuit Waveform NCV8512 RRST COUT** 10 mF RESET SETTING THE DELAY TIME The delay time is controlled by the Reset Delay Low Voltage, Delay Switching Threshold, and the Delay Charge Current. The delay follows the equation: tDELAY + ƪ33 nF(1.8 * 0.04 V)ƫ *CIN required if regulator is located far from the power supply filter. **COUT required for stability. Capacitor must operate at minimum temperature expected. ƪCDELAY(VDT * Reset Delay Low Voltage)ƫ Delay Charge Current Figure 15. Test and Application Circuit Showing Output Compensation Example: Using CDELAY = 33 nF. Use the typical value for Delay Low Voltage = 0.04 V. http://onsemi.com 8 NCV8512 CALCULATING POWER DISSIPATION IN A SINGLE OUTPUT LINEAR REGULATOR The maximum power dissipation for a single output regulator (Figure 16) is: PD(max) + [VIN(max) * VOUT(min)] IOUT(max) HEATSINKS A heatsink effectively increases the surface area of the package to improve the flow of heat away from the IC and into the surrounding air. Each material in the heat flow path between the IC and the outside environment will have a thermal resistance. Like series electrical resistances, these resistances are summed to determine the value of RqJA: (1) ) VIN(max)IQ where: VIN(max) is the maximum input voltage, VOUT(min) is the minimum output voltage, IOUT(max) is the maximum output current for the application, and IQ is the quiescent current the regulator consumes at IOUT(max). Once the value of PD(max) is known, the maximum permissible value of RqJA can be calculated: T RqJA + 150C * A PD RqJA + RqJC ) RqCS ) RqSA (2) The value of RqJA can then be compared with those in the package section of the data sheet. Those packages with RqJA’s less than the calculated value in equation 2 will keep the die temperature below 150°C. In some cases, none of the packages will be sufficient to dissipate the heat generated by the IC, and an external heatsink will be required. IOUT IIN SMART REGULATOR® VIN (3) where: RqJC = the junction−to−case thermal resistance, RqCS = the case−to−heatsink thermal resistance, and RqSA = the heatsink−to−ambient thermal resistance. RqJC appears in the package section of the data sheet. Like RqJA, it too is a function of package type. RqCS and RqSA are functions of the package type, heatsink and the interface between them. These values appear in heatsink data sheets of heat sink manufacturers. Further mounting and cooling information is available in the application note, AN1040/D, “Mounting Considerations for Power Semiconductors” located in the ON Semiconductor web site. VOUT } Control Features IQ Figure 16. Single Output Regulator with Key Performance Parameters Labeled ORDERING INFORMATION Device NCV8512PW50G NCV8512PW50R2G Output Voltage Package Shipping† 5.0 V SOW−16 E Pad (Pb−Free) 47 Units / Rail 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SMART REGULATOR is a registered trademark of Semiconductor Components Industries, LLC. http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC 16 LEAD WIDE BODY, EXPOSED PAD CASE 751AG ISSUE B SCALE 1:1 −U− A 0.25 (0.010) M W 9 B 1 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751R-01 OBSOLETE, NEW STANDARD 751R-02. M 16 P R x 45_ 8 −W− G 14 TOP VIEW PIN 1 I.D. PL DETAIL E C F −T− 0.10 (0.004) T K D 16 PL 0.25 (0.010) T U M SEATING PLANE W S S J SIDE VIEW DETAIL E 1 DIM A B C D F G H J K L M P R MILLIMETERS MIN MAX 10.15 10.45 7.40 7.60 2.35 2.65 0.35 0.49 0.50 0.90 1.27 BSC 3.45 3.66 0.25 0.32 0.00 0.10 4.72 4.93 0_ 7_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.400 0.411 0.292 0.299 0.093 0.104 0.014 0.019 0.020 0.035 0.050 BSC 0.136 0.144 0.010 0.012 0.000 0.004 0.186 0.194 0_ 7_ 0.395 0.415 0.010 0.029 GENERIC MARKING DIAGRAM* H EXPOSED PAD DATE 31 MAY 2016 8 XXXXXXXXXX XXXXXXXXXX XXXXXXXXXX AWLYYWWG L 16 9 BOTTOM VIEW XXXXX A WL YY WW G SOLDERING FOOTPRINT* 0.350 Exposed Pad 0.175 0.050 CL 0.200 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.188 CL = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package 0.376 0.074 0.150 0.024 DIMENSIONS: INCHES *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON21237D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOIC−16, WB EXPOSED PAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
NCV8512PW50G
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器。

2. 器件简介:该器件是意法半导体生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式应用。

3. 引脚分配:该器件共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考引脚图。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、定时器、ADC、通信接口(如UART、SPI、I2C)等模块的详细介绍。

6. 应用信息:适用于工业控制、消费电子、医疗设备等多种应用场景。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。
NCV8512PW50G 价格&库存

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