NCV8535
Voltage Regulator - Ultra
High Accuracy, Low Iq, Low
Dropout, Enable
500 mA
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The NCV8535 is a high performance, low dropout regulator. With
accuracy of ±0.9% over line and load and ultra−low quiescent current
and noise it encompasses all of the necessary features required by
today’s consumer electronics. This unique device is guaranteed to be
stable without a minimum load current requirement and stable with
any type of capacitor as small as 1.0 mF. The NCV8535 also comes
equipped with sense and noise reduction pins to increase the overall
utility of the device. The NCV8535 offers reverse bias protection.
DFN10
CASE 485C
PIN CONFIGURATION
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High Accuracy Over Line and Load (±0.9% at 25°C)
Ultra−Low Dropout Voltage at Full Load (260 mV typ.)
No Minimum Output Current Required for Stability
Low Noise (31 mVrms w/10 nF Cnr and 51 mVrms w/out Cnr)
Low Shutdown Current (0.07 mA)
Reverse Bias Protected
2.9 V to 12 V Supply Range
Thermal Shutdown Protection
Current Limitation
Requires Only 1.0 mF Output Capacitance for Stability
Stable with Any Type of Capacitor (including MLCC)
Available in 1.5 V, 1.8 V, 1.9 V, 2.5 V, 2.8 V, 2.85 V, 3.0 V, 3.3 V,
3.5 V, 5.0 V and Adjustable Output Voltages
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
Applications
•
•
•
•
•
•
•
•
PCMCIA Card
Cellular Phones
Camcoders and Cameras
Networking Systems, DSL/Cable Modems
Cable Set−Top Box
MP3/CD Players
DSP Supply
Displays and Monitors
© Semiconductor Components Industries, LLC, 2013
October, 2019 − Rev. 7
DFNW10
CASE 507AM
Fixed Version
Pin 1, 2. Vout
3. Sense
4. GND
5, 6. NC
7. NR
8. SD
9, 10. Vin
Adj Version
Pin 1, 2. Vout
3. Adj
4. GND
5, 6. NC
7. NR
8. SD
9, 10. Vin
MARKING DIAGRAM
1
V8535
xxx
ALYWG
G
1
L8535
xxx
ALYWG
G
V8535= Specific Device Code
L8535 = Specific Device Code
xxx = ADJ, 150, 180, 190, 250, 280,
285, 300, 330, 350, 500
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 21 of this data sheet.
1
Publication Order Number:
NCV8535/D
NCV8535
Cnr
10 nF
(Optional)
7
NR
SENSE
9
10
Vin
IN
OUT
IN
OUT
+
Cin
1.0 mF
2
Vout
1
Cout
1.0 mF
GND
SD
8
3
4
+
ON
OFF
Figure 1. Typical Fixed Version Application Schematic
Cnr
10 nF
(Optional)
7
NR
OUT
9
10
Vin
Cin
1.0 mF
OUT
IN
ADJ
IN
+
SD
8
2
1
3
R1
CADJ
68 pF
Vout
Cout
1.0 mF
R2
GND
4
ON
OFF
Figure 2. Typical Adjustable Version Application Schematic
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2
+
NCV8535
Figure 3. Block Diagram, Fixed Output Version
Figure 4. Block Diagram, Adjustable Output Version
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3
NCV8535
PIN FUNCTION DESCRIPTION
Pin No.
Pin Name
Description
FIXED VERSION
1, 2
Vout
3
SENSE
4
GND
7
NR
Noise Reduction Pin. This is an optional pin used to further reduce noise.
Regulated output voltage. Bypass to ground with Cout w 1.0 mF.
For output voltage sensing, connect to Pins 1 and 2.
Power Supply Ground
8
SD
Shutdown pin. When not in use, this pin should be connected to the input pin.
9, 10
Vin
Power Supply Input Voltage
5, 6
NC
Not Connected
EPAD
EPAD
Exposed thermal pad should be connected to ground.
ADJUSTABLE VERSION
Vout
Regulated output voltage. Bypass to ground with Cout w 1.0 mF.
3
Adj
Adjustable pin; reference voltage = 1.25 V.
4
GND
7
NR
Noise Reduction Pin. This is an optional pin used to further reduce noise.
8
SD
Shutdown pin. When not in use, this pin should be connected to the input pin.
9, 10
Vin
Power Supply Input Voltage
5, 6
NC
Not Connected
EPAD
EPAD
1, 2
Power Supply Ground
Exposed thermal pad should be connected to ground.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage
Vin
−0.3 to +16
V
Output Voltage
Vout
−0.3 to Vin +0.3 or 10 V*
V
Shutdown Pin Voltage
Vsh
−0.3 to +16
V
Junction Temperature Range
TJ
−40 to +150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
Charged Device Model (CDM) tested per EIA/JESD22−C101
*Which ever is less. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V.
THERMAL CHARACTERISTICS
Test Conditions (Typical Value)
Min Pad Board (Note 1)
1, Pad Board (Note 1)
Unit
Junction−to−Air, qJA
215
66
°C/W
Junction−to−Pin, yJL2
55
17
°C/W
Characteristic
1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and
heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions
are under natural convection or zero air flow.
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NCV8535
ELECTRICAL CHARACTERISTICS – 5.0 V
(Vout = 5.0 V typical, Vin = 5.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 2.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
4.955
5.0
+0.9%
5.045
V
Output Voltage (Accuracy)
Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
4.930
5.0
+1.4%
5.070
V
Output Voltage (Accuracy)
Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
4.925
5.0
+1.5%
5.075
V
Line Regulation
Vin = 5.4 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 5.4 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
340
230
110
10
500
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 3)
Iload = 300 mA (Note 3)
Iload = 50 mA
Iload = 0.1 mA
700
mV
830
mA
930
mA
160
°C
IGND
In Dropout
Vin = 4.9 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
9.0
4.6
0.8
−
14
7.5
2.5
190
mA
−
500
mA
0.07
1.0
mA
93
58
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 5.0 V)
IOUTR
10
mA
2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
3. TA must be greater than 0°C.
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NCV8535
ELECTRICAL CHARACTERISTICS – 3.5 V
(Vout = 3.5 V typical, Vin = 3.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 4.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
3.469
3.5
+0.9%
3.532
V
Output Voltage (Accuracy)
Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
3.451
3.5
+1.4%
3.549
V
Output Voltage (Accuracy)
Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
3.448
3.5
+1.5%
3.553
V
Line Regulation
Vin = 3.9 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 3.9 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
340
230
110
10
500
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 5)
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
700
mV
800
mA
900
mA
160
°C
IGND
In Dropout
Vin = 3.4 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
9.0
4.6
0.8
−
14
7.5
2.5
190
mA
−
500
mA
0.07
1.0
mA
68
47
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 3.5 V)
IOUTR
10
mA
4. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. TA must be greater than 0°C.
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NCV8535
ELECTRICAL CHARACTERISTICS – 3.3 V
(Vout = 3.3 V typical, Vin = 3.7 V, TA = −40°C to +85°C, unless otherwise noted, Note 6.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
3.270
3.3
+0.9%
3.330
V
Output Voltage (Accuracy)
Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
3.254
3.3
+1.4%
3.346
V
Output Voltage (Accuracy)
Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
3.250
3.3
+1.5%
3.350
V
Line Regulation
Vin = 3.7 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 3.7 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
340
230
110
10
500
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 7)
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
700
mV
800
mA
900
mA
160
°C
IGND
In Dropout
Vin = 3.2 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
9.0
4.6
0.8
−
14
7.5
2.5
190
mA
−
500
mA
0.07
1.0
mA
69
46
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 3.3 V)
IOUTR
10
mA
6. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
7. TA must be greater than 0°C.
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NCV8535
ELECTRICAL CHARACTERISTICS – 3.0 V
(Vout = 3.0 V typical, Vin = 3.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 8.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
2.973
3.0
+0.9%
3.027
V
Output Voltage (Accuracy)
Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
2.958
3.0
+1.4%
3.042
V
Output Voltage (Accuracy)
Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
2.955
3.0
+1.5%
3.045
V
Line Regulation
Vin = 3.4 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 3.4 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
340
230
110
10
500
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 9)
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
700
800
mA
900
mA
160
°C
IGND
In Dropout
Vin = 2.9 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
mA
9.0
4.6
0.8
−
14
7.5
2.5
190
−
500
mA
0.07
1.0
mA
56
37
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
mV
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 3.0 V)
IOUTR
10
mA
8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. TA must be greater than 0°C.
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NCV8535
ELECTRICAL CHARACTERISTICS − 2.85 V
(Vout = 2.85 V typical, Vin = 3.25 V, TA = −40°C to +85°C, unless otherwise noted, Note 10)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
2.824
2.85
+0.9%
2.876
V
Output Voltage (Accuracy)
Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
2.810
2.85
+1.4%
2.890
V
Output Voltage (Accuracy) (Note 11)
Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
2.807
2.85
+1.5%
2.893
V
Line Regulation
Vin = 3.25 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 3.25 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1mA
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
340
230
110
10
500
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 12)
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
700
mV
800
mA
900
mA
160
°C
IGND
In Dropout
Vin = 2.75 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
9.0
4.6
0.8
−
14
7.5
2.5
190
mA
−
500
mA
0.07
1.0
mA
61
40
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 2.85 V)
IOUTR
10
mA
10. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. For output current capability for TA < 0°C, please refer to Figure 18.
12. TA must be greater than 0°C.
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NCV8535
ELECTRICAL CHARACTERISTICS − 2.8 V
(Vout = 2.8 V typical, Vin = 3.2 V, TA = −40°C to +85°C, unless otherwise noted, Note 13.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
2.774
2.8
+0.9%
2.826
V
Output Voltage (Accuracy)
Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
2.760
2.8
+1.4%
2.840
V
Output Voltage (Accuracy) (Note 14)
Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
2.758
2.8
+1.5%
2.842
V
Line Regulation
Vin = 3.2 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 3.2 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1mA
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
340
230
110
10
500
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 15)
Iload = 300 mA (Note 15)
Iload = 50 mA
Iload = 0.1 mA
700
mV
800
mA
900
mA
160
°C
IGND
In Dropout
Vin = 2.7 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
9.0
4.6
0.8
−
14
7.5
2.5
190
mA
−
500
mA
0.07
1.0
mA
52
36
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 2.8 V)
IOUTR
10
mA
13. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
14. For output current capability for TA < 0°C, please refer to Figure 19.
15. TA must be greater than 0°C.
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10
NCV8535
ELECTRICAL CHARACTERISTICS − 2.5 V
(Vout = 2.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 16.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
2.477
2.5
+0.9%
2.523
V
Output Voltage (Accuracy)
Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
2.465
2.5
+1.4%
2.535
V
Output Voltage (Accuracy), (Note 17)
Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
2.462
2.5
+1.5%
2.538
V
Line Regulation
Vin = 2.9 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 2.9 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA (Note 18)
Iload = 300 mA (Note 18)
Iload = 50 mA
Iload = 0.1mA
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
340
230
110
10
500
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 18)
Iload = 300 mA (Note 18)
Iload = 50 mA
Iload = 0.1 mA
700
mV
800
mA
900
mA
160
°C
IGND
9.0
4.6
0.8
−
In Dropout
Vin = 2.4 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
0.07
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
mA
500
mA
1.0
mA
56
35
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
14
7.5
2.5
190
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 2.5 V)
IOUTR
10
mA
16. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
17. For output current capability for TA < 0°C, please refer to Figure 20.
18. TA must be greater than 0°C.
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11
NCV8535
ELECTRICAL CHARACTERISTICS − 1.9 V
(Vout = 1.9 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 19.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
1.883
1.9
+0.9%
1.917
V
Output Voltage (Accuracy)
Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
1.873
1.9
+1.4%
1.927
V
Output Voltage (Accuracy), (Note 20)
Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
1.872
1.9
+1.5%
1.929
V
Line Regulation
Vin = 2.9 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 2.9 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA (Notes 21, 22)
Iload = 300 mA (Notes 21, 22)
Iload = 50 mA (Notes 21, 22)
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 21)
Iload = 300 mA (Note 21)
Iload = 50 mA
Iload = 0.1 mA
500
mV
367
156
90
1030
1030
1030
700
800
mA
900
mA
160
°C
IGND
9.0
4.6
0.8
−
In Dropout
Vin = 2.2 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
0.07
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
mA
500
mA
1.0
mA
53
33
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
14
7.5
2.5
190
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 1.9 V)
IOUTR
10
mA
19. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
20. For output current capability for TA < 0°C, please refer to Figure 21.
21. TA must be greater than 0°C.
22. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation.
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12
NCV8535
ELECTRICAL CHARACTERISTICS − 1.8 V
(Vout = 1.8 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 23.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
1.783
1.8
+0.9%
1.817
V
Output Voltage (Accuracy)
Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
1.774
1.8
+1.4%
1.826
V
Output Voltage (Accuracy), (Note 24)
Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
1.773
1.8
+1.5%
1.827
V
Line Regulation
Vin = 2.9 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 2.9 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA (Notes 25, 26)
Iload = 300 mA (Notes 25, 26)
Iload = 50 mA (Notes 25, 26)
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 25)
Iload = 300 mA (Note 25)
Iload = 50 mA
Iload = 0.1 mA
500
mV
620
230
95
1130
1130
1130
700
830
mA
900
mA
160
°C
IGND
9.0
4.6
0.8
−
In Dropout
Vin = 2.2 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
0.07
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
mA
500
mA
1.0
mA
52
33
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
14
7.5
2.5
190
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 1.8 V)
IOUTR
10
mA
23. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
24. For output current capability for TA < 0°C, please refer to Figure 21.
25. TA must be greater than 0°C.
26. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation.
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13
NCV8535
ELECTRICAL CHARACTERISTICS − 1.5 V
(Vout = 1.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 27.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy)
Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.9%
1.486
1.5
+0.9%
1.514
V
Output Voltage (Accuracy)
Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.4%
1.479
1.5
+1.4%
1.521
V
Output Voltage (Accuracy), (Note 28)
Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.5%
1.477
1.5
+1.5%
1.523
V
Line Regulation
Vin = 2.9 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 2.9 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note)
Iload = 500 mA (Notes 29, 30)
Iload = 300 mA (Notes 29, 30)
Iload = 50 mA (Notes 29, 30)
VDO
Peak Output Current (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Isc
Thermal Shutdown
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 29)
Iload = 300 mA (Note 29)
Iload = 50 mA
Iload = 0.1 mA
500
mV
940
500
350
1430
1430
1430
700
860
mA
900
mA
160
°C
IGND
9.0
4.6
0.8
−
In Dropout
Vin = 2.2 V, Iload = 0.1 mA
In Shutdown
SD = 0 V
0.07
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
mA
500
mA
1.0
mA
51
31
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
14
7.5
2.5
190
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 1.5 V)
IOUTR
10
mA
27. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
28. For output current capability for TA < 0°C, please refer to Figure 22.
29. TA must be greater than 0°C.
30. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation.
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14
NCV8535
ELECTRICAL CHARACTERISTICS – Adjustable
(Vout = 1.25 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 31)
Characteristic
Symbol
Min
Typ
Max
Unit
Reference Voltage (Accuracy)
Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vref
−0.9%
1.239
1.25
+0.9%
1.261
V
Reference Voltage (Accuracy)
Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vref
−1.4%
1.233
1.25
+1.4%
1.268
V
Reference Voltage (Accuracy) (Note 32)
Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vref
−1.5%
1.231
1.25
+1.5%
1.269
V
Line Regulation
Vin = 2.9 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 2.9 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage (See App Note), Vout = 2.5 V to 10 V
Iload = 500 mA (Note 33)
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
VDO
Peak Output Current (Note 33) (See Figure 16)
Ipk
Short Output Current (See Figure 16)
Vout ≤ 3.3 V
Vout > 3.3 V
Thermal Shutdown
340
230
110
10
500
Isc
TJ
Ground Current
In Regulation
Iload = 500 mA (Note 33)
Iload = 300 mA (Note 33)
Iload = 50 mA
Iload = 0.1 mA
700
mV
860
mA
900
990
mA
160
°C
IGND
In Dropout
Vin = Vout −0.1 V or 2.2 V (whichever is higher), Iload = 0.1 mA
In Shutdown
SD = 0 V
IGNDsh
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
9.0
4.6
0.8
−
14
7.5
2.5
190
mA
−
500
mA
0.07
1.0
mA
38
26
2.0
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
Vin ≤ 5.4 V
Vin > 5.4 V
mA
mVrms
mVrms
0.4
V
V
ISD
0.07
1.0
5.0
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1.0
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = Vout (nom) ≤ 7 V) (Note 34)
IOUTR
1.0
mA
31. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
32. For output current capability for TA < 0°C, please refer to Figures 18 to 22.
33. TA must be greater than 0°C.
34. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V.
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15
NCV8535
3.04
5.05
VOUT (V)
5.00
VOUT = 5.0 V
4.95
3.01
3.00
VOUT = 3.0 V
2.99
2.98
2.97
4.90
2.96
−15
10
35
60
85
110
2.95
−40
135 150
20
40
60
80
100
120
140
Figure 5. Output Voltage vs. Temperature
5.0 V Version
Figure 6. Output Voltage vs. Temperature
3.0 V Version
2.550
2.84
2.540
2.83
2.530
2.82
2.520
2.81
2.510
2.80
VOUT = 2.8 V
2.79
2.500
2.480
2.77
2.470
2.76
2.460
−20
0
20
40
60
80
100
120
2.450
−40
140
VOUT = 2.5 V
2.490
2.78
−20
0
20
40
60
80
100
120
140
TA, TEMPERATURE (°C)
TA, TEMPERATURE (°C)
Figure 7. Output Voltage vs. Temperature
2.8 V Version
Figure 8. Output Voltage vs. Temperature
2.5 V Version
1.85
1.55
1.84
1.54
1.83
1.53
1.82
1.52
1.81
1.51
1.80
VOUT = 1.8 V
1.79
1.50
1.48
1.77
1.47
1.76
1.46
−20
0
20
40
60
80
100
120
1.45
−40
140
VOUT = 1.5 V
1.49
1.78
1.75
−40
0
TA, TEMPERATURE (°C)
2.85
2.75
−40
−20
TA, TEMPERATURE (°C)
VOUT (V)
VOUT (V)
3.03
3.02
4.85
−40
VOUT (V)
3.05
VOUT (V)
OUTPUT VOLTAGE, VOUT (V)
5.10
−20
0
20
40
60
80
100
120
140
TA, TEMPERATURE (°C)
TA, TEMPERATURE (°C)
Figure 9. Output Voltage vs. Temperature
1.8 V Version
Figure 10. Output Voltage vs. Temperature
1.5 V Version
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16
NCV8535
400
400
350
350
500 mA
250
300 mA
200
150
50 mA
100
250
200
150
0
20
40
60
80
100
120
0
140
60
80
100
120
140
TA, TEMPERATURE (°C)
500 mA
900
800
500 mA
VDO (mV)
700
600
300 mA
300
200
700
300 mA
600
500
400
50 mA
300
200
100
0
50 mA
0
40
Figure 12. Dropout Voltage vs. Temperature
2.5 V Version
1100
1000
500
400
20
TA, TEMPERATURE (°C)
1200
900
800
0
Figure 11. Dropout Voltage vs. Temperature
2.8 V Version
1100
1000
VDO (mV)
50 mA
50
1200
100
0
300 mA
100
50
0
500 mA
300
VDO (mV)
VDO (mV)
300
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
TA, TEMPERATURE (°C)
TA, TEMPERATURE (°C)
Figure 13. Dropout Voltage vs. Temperature
1.8 V Version
Figure 14. Dropout Voltage vs. Temperature
1.5 V Version
1000
900
700
Ipk
600
Vout (V)
Ipk (mA), Isc (mA)
0.97 Vout
Isc
800
500
400
300
200
100
0
0
20
40
60
80
100
120
Ipk
Isc
Iout (mA)
(For specific values of Ipk and Isc, please refer to Figure 15)
140
TA, TEMPERATURE (°C)
Figure 15. Peak and Short Current
vs. Temperature
Figure 16. Output Voltage vs. Output Current
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17
NCV8535
0.8
12
0.7
10
500 mA
−20°C
0.5
IOUT (A)
8
IGND (mA)
0°C
0.6
6
300 mA
4
0.4
0.3
0.2
2
0.1
50 mA
0
3.85 3.75 3.65 3.55 3.45 3.35 3.25 3.15 3.05 2.95 2.85
0
0
20
40
60
80
100
TA, TEMPERATURE (°C)
120
140
VIN (V)
Figure 18. Output Current Capability for the
2.85 V Version
Figure 17. Ground Current vs. Temperature
800
0.8
700
0°C
0.7
−40°C
500
−20°C
400
IOUT (A)
−30°C
−10°C
300
0.5
100
0.1
3.6
3.5
3.4
3.3
3.2
3.1
3.0
2.9
0
2.8
3.5 3.4
3.3
3.2
−20°C
3.1
3.0
2.9
2.8
2.7
2.6 2.5
VIN (V)
VIN (V)
Figure 19. Output Current Capability for the
2.8 V Version
Figure 20. Output Current Capability for the
2.5 V Version
800
800
125°C
700
85°C
600
500 −40°C
500
−30°C
−20°C
400
300
−10°C
200
0°C
125°C
700
600
400
85°C
−40°C
−30°C
−20°C
300
−10°C
200
25°C
100
0
−30°C
0.3
0.2
3.7
−40°C
0.4
200
0
3.8
−10°C
0°C
0.6
IOUT (mA)
IOUT (mA)
600
IOUT (mA)
−40°C
0°C
100
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
0
3.2
3.0
2.8
2.6
25°C
2.4
2.2
2.0
VIN (V)
VIN (V)
Figure 21. Output Current Capability for the
1.8 V Version
Figure 22. Output Current Capability for the
1.5 V Version
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18
1.8
NCV8535
450
80
400
70
50 mA
250 mA
60
NOISE DENSITY (nV/ǠHz)
500
90
RR, RIPPLE REJECTION (dB)
100
50
500 mA
40
30
20
10
Vout = 2.5 V
Cout = 10 mF
TJ = 25°C
0
0.01
Cout = 1.0 mF
Cnr = 0 nF
350
300
250
200
Vout = 2.5 V
Iout = 500 mA
TJ = 25°C
100
0
1.0
10
Cout = 1.0 mF
Cnr = 10 nF
150
50
0.1
Cout = 10 mF
Cnr = 0 nF
100
0.01
Cout = 10 mF
Cnr = 10 nF
0.1
1.0
10
F, FREQUENCY (kHz)
F, FREQUENCY (kHz)
Figure 23. Ripple Rejection vs. Frequency
Figure 24. Output Noise Density
100
300
qJA (°C/W)
250
200
150
1 oz CF
100
2 oz CF
50
0
0
100
200
300
400
500
COPPER HEAT SPREADING AREA
600
700
(mm2)
Figure 25. DFN 10 Self Heating Thermal
Characteristic as a Function of Copper Area
on the PCB
15
15
5 V, 0.1 mF
5 V, 10 mF
5 V, 1.0 mF
10
10
ESR (W)
MAXIMUM ESR (W)
Vin at Data Sheet Test Conditions,
25°C, 1 mF Capacitance
Unstable Area
5.0
1.25 V
5.0
Min ESR
Stable Area
0
0
100
200
300
400
500
0
0
100
200
300
400
OUTPUT CURRENT (mA)
OUTPUT CURRENT (mA)
Figure 26. Stability with ESR vs. Iout
Figure 27. Output Current vs. ESR
NOTE: Typical characteristics were measured with the same conditions as electrical characteristics.
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19
500
NCV8535
APPLICATIONS INFORMATION
Reverse Bias Protection
Adjustable Operation
Reverse bias is a condition caused when the input voltage
goes to zero, but the output voltage is kept high either by a
large output capacitor or another source in the application
which feeds the output pin.
Normally in a bipolar LDO all the current will flow from
the output pin to input pin through the PN junction with
limited current capability and with the potential to destroy
the IC.
Due to an improved architecture, the NCV8535 can
withstand up to 7.0 V on the output pin with virtually no
current flowing from output pin to input pin, and only
negligible amount of current (tens of mA) flowing from the
output pin to ground for infinite duration.
The output voltage can be set by using a resistor divider
as shown in Figure 2 with a range of 1.25 to 10 V. The
appropriate resistor divider can be found by solving the
equation below. The recommended current through the
resistor divider is from 10 mA to 100 mA. This can be
accomplished by selecting resistors in the kW range. As
result, the Iadj*R2 becomes negligible in the equation and
can be ignored.
ǒ
Ǔ
Vout + 1.25 * 1 ) R1 ) Iadj * R2
R2
(eq. 1)
Example:
For Vout = 2.9 V, can use R1 = 36 kW and R2 = 27 kW.
ǒ
1.25 * 1 )
Input Capacitor
An input capacitor of at least 1.0 mF, any type, is
recommended to improve the transient response of the
regulator and/or if the regulator is located more than a few
inches from the power source. It will also reduce the circuit’s
sensitivity to the input line impedance at high frequencies.
The capacitor should be mounted with the shortest possible
track length directly across the regular’s input terminals.
Ǔ
36 kW
+ 2.91 V
27 kW
(eq. 2)
Dropout Voltage
The voltage dropout is measured at 97% of the nominal
output voltage.
No−Load Regulation Considerations
If there is no load at output of the regulator and ambient
temperature is higher than 85°C leakage current flowing
from input to output through pass transistor may cause
increase of output voltage out of specification range up to
input voltage level. To avoid this situation minimum load
current of 100 mA or higher is recommended if ambient
temperature exceeds 85°C.
Output Capacitor
The NCV8535 remains stable with any type of capacitor
as long as it fulfills its 1.0 mF requirement. There are no
constraints on the minimum ESR and it will remain stable up
to an ESR of 5.0 W. Larger capacitor values will improve the
noise rejection and load transient response.
Thermal Considerations
Internal thermal limiting circuitry is provided to protect the
integrated circuit in the event that the maximum junction
temperature is exceeded. This feature provides protection
from a catastrophic device failure due to accidental
overheating. This protection feature is not intended to be used
as a substitute to heat sinking. The maximum power that can
be dissipated, can be calculated with the equation below:
Noise Reduction Pin
Output noise can be greatly reduced by connecting a 10 nF
capacitor (Cnr) between the noise reduction pin and ground
(see Figure 1). In applications where very low noise is not
required, the noise reduction pin can be left unconnected.
For the adjustable version, in addition to the 10 nF Cnr, a
68 pF capacitor connected in parallel with R1 (see Figure 2)
is recommended to further reduce output noise and improve
stability.
PD +
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20
TJ(max) * TA
RqJA
(eq. 3)
NCV8535
DEVICE ORDERING INFORMATION
Device*
Voltage Option
Marking Code
NCV8535MNADJR2G
Adj.
V8535 ADJ
NCV8535MN150R2G
1.5 V
V8535 150
NCV8535MN180R2G
1.8 V
V8535 180
NCV8535MN190R2G
1.9 V
V8535 190
NCV8535MN250R2G
2.5 V
V8535 250
NCV8535MN280R2G
2.8 V
V8535 280
NCV8535MN285R2G
2.85 V
V8535 285
NCV8535MN300R2G
3.0 V
V8535 300
NCV8535MN330R2G
3.3 V
V8535 330
NCV8535MN350R2G
3.5 V
V8535 350
NCV8535MN500R2G
5.0 V
V8535 500
NCV8535MLADJR2G
Adj.
L8535 ADJ
NCV8535ML180R2G
1.8 V
L8535 180
NCV8535ML250R2G
2.5 V
L8535 250
NCV8535ML330R2G
3.3 V
L8535 330
Package
Feature
Shipping†
DFN10
(Pb−Free)
Non−Wettable
Flank
3000 / Tape & Reel
DFN10
(Pb−Free)
Wettable Flank
SLP Process
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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21
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN10, 3x3, 0.5P
CASE 485C
ISSUE F
SCALE 2:1
DATE 16 DEC 2021
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
ALYWG
G
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
*This information is generic. Please refer to
Y
= Year
device data sheet for actual part marking.
W
= Work Week
Pb−Free indicator, “G” or microdot “G”, may
G
= Pb−Free Package
or may not be present. Some products may
(Note: Microdot may be in either location) not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON03161D
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DFN10, 3X3 MM, 0.5 MM PITCH
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW10 3x3, 0.5P
CASE 507AM
ISSUE A
DATE 12 JUN 2018
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
ALYWG
G
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX = Specific Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
98AON85414G
DFNW10 3x3, 0.5P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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