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NCV8537MN180GEVB

NCV8537MN180GEVB

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    -

  • 描述:

    BOARD EVALUATION NCV8537 1.8V

  • 数据手册
  • 价格&库存
NCV8537MN180GEVB 数据手册
NCV8537 Linear Regulator - High Accuracy, Low Dropout, Power Good Function 500 mA www.onsemi.com The NCV8537 is a high performance low dropout linear voltage regulator. Based on the popular NCV8535, the device retains all the best features of its predecessor which includes high accuracy, excellent stability, low noise performance and reverse bias protection but now includes a Power Good output signal to enable monitoring of the supply system. The device is available with fixed or adjustable outputs and is packaged in a 10 pin 3x3 mm DFN package. DFN10 CASE 485C Features PIN CONFIGURATION • High Accuracy Output Over Line and Load Variances (±0.9% at • • • • • • • • • • • • • 25°C) Operating Temperature Range: −40°C to 125°C Power Good Output to Indicate the Regulator is Within Specified Limits Stable Output with Low Value Capacitors of any type and with no Minimum Load Current Requirement Incorporates Current Limiting and Reverse Bias Protection Thermal Shutdown Protection Low Dropout Voltage at Full Load (340 mV typ at Vo = 3.3 V) Low Noise (33 mVrms w/ 10 nF Cnr and 52 mVrms w/out Cnr) Low Shutdown Current (< 1 mA) Reverse Bias Protected 2.9 V to 12 V Supply Range Available in 1.8 V, 2.5 V, 3.3 V, 5.0 V and Adjustable Output Voltages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices Applications • • • • Networking Systems, DSL/Cable Modems Audio Systems for Automotive Applications Navigation Systems Satellite Receivers © Semiconductor Components Industries, LLC, 2017 October, 2019 − Rev. 6 DFNW10 CASE 507AM Pin 1, 2. Vout 3. Sense / ADJ 4. GND 5. PWRG 6. NC 7. NR 8. SD 9, 10. Vin EP, GND MARKING DIAGRAM 1 V8537 xxx ALYWG G 1 L8537 xxx ALYWG G V8537= Specific Device Code L8537 = Specific Device Code xxx = ADJ, 180, 250, 330, 500 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 15 of this data sheet. 1 Publication Order Number: NCV8537/D NCV8537 ON 7 6 OFF 8 9 10 Vin Cnr (Optional) NR NC SD SENSE IN OUT IN OUT + Cin 1.0 mF R1 PWRG EP 100k 5 EP 3 2 Vout 1 Cout 1.0 mF GND 4 + PWRG Figure 1. Typical Fixed Version Application Schematic ON 7 6 OFF 8 9 10 Vin Cnr (Optional) NR NC SD ADJ IN OUT IN OUT + Cin 1.0 mF R1 PWRG EP 100k 5 EP GND 4 R2 3 2 R3 1 Vout Cout 1.0 mF + PWRG Figure 2. Typical Adjustable Version Application Schematic www.onsemi.com 2 NCV8537 Comp. PWRG Vin SD Enable Block Voltage Reference Current and Thermal Protection Circuit NR Error Amplifier Series Pass Element with Reverse Bias Protection Vout ADJ NCV8537 Adjustable GND Figure 3. Block Diagram, Adjustable Output Version Comp. PWRG Vin SD Enable Block Voltage Reference Current and Thermal Protection Circuit NR Error Amplifier Series Pass Element with Reverse Bias Protection Vout SENSE NCV8537 Fix GND Figure 4. Block Diagram, Fixed Output Version www.onsemi.com 3 NCV8537 PIN FUNCTION DESCRIPTION Pin No. Pin Name 1, 2 Vout Description 3 SENSE/ADJ 4 GND 5 PWRG 6 NC Not Connected 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 9, 10 Vin Power Supply Input Voltage EPAD EPAD Regulated output voltage. Bypass to ground with Cout w 1.0 mF For output voltage sensing, connect to Pins 1 and 2.at Fixed output Voltage version Adjustable pin at Adjustable output version Power Supply Ground Power Good Exposed thermal pad should be connected to ground. MAXIMUM RATINGS Symbol Value Unit Input Voltage Rating Vin −0.3 to +16 V Output Voltage Vout −0.3 to Vin +0.3 or 10 V* V VPWRG −0.3 to +16 V Shutdown Pin Voltage Vsh −0.3 to +16 V Junction Temperature Range TJ −40 to +150 °C Storage Temperature Range Tstg −50 to +150 °C PWRG Pin Voltage Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114) Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115) Charged Device Model (CDM) tested per EIA/JESD22−C101. *Which ever is less. Reverse bias protection feature valid only if (Vout − Vin) ≤ 7 V. THERMAL CHARACTERISTICS Test Conditions (Typical Value) Min Pad Board (Note 1) 1, Pad Board (Note 1) Unit Junction−to−Air, qJA 215 66 °C/W Junction−to−Pin, J−L4 58 18 °C/W Characteristic 1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions are under natural convection or zero air flow. www.onsemi.com 4 NCV8537 ELECTRICAL CHARACTERISTICS − 1.8 V (Vout = 1.8 V typical, Vin = 2.9 V, TA = −40°C to +125°C, unless otherwise noted, Note 2) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 1.783 1.8 +0.9% 1.817 V Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 1.774 1.8 +1.4% 1.826 V Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 1.773 1.8 +1.5% 1.827 V Minimum Input Voltage Vinmin 2.9 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See Figure 9) Iload = 500 mA (Notes 3, 4) Iload = 300 mA (Notes 3, 4) Iload = 50 mA (Notes 3, 4) VDO Peak Output Current (See Figures 14 and 17) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25°C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 3) Iload = 300 mA (Note 3) Iload = 50 mA Iload = 0.1 mA mV 620 230 95 500 700 830 mA 900 mA 160/10 °C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise 14 7.5 2.5 220 mA 500 mA 1.0 mA 52 33 mA mVrms mVrms Power Good Voltage Low Threshold Hysteresis High Threshold Velft Power Good Pin Voltage Saturation (Ief − 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1.0 mA tef 50 ms Power Good Blanking Time (Note 7) Shutdown Threshold Voltage ON Threshold Voltage OFF VSD SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.8 V) 93 95 2 97 2.0 % of Vout 99 0.4 V V 0.07 1.0 mA IOSD 0.07 1.0 mA IOUTR 10 mA 2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. TA must be greater than 0°C. 4. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. www.onsemi.com 5 NCV8537 ELECTRICAL CHARACTERISTICS − 2.5 V (Vout = 2.5 V typical, Vin = 2.9 V, TA = −40°C to +125°C, unless otherwise noted, Note 5) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.477 2.5 +0.9% 2.523 V Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.465 2.5 +1.4% 2.535 V Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.462 2.5 +1.5% 2.538 V Minimum Input Voltage Vinmin 2.9 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See Figure 10) Iload = 500 mA (Note 6) Iload = 300 mA (Note 6) Iload = 50 mA Iload = 0.1mA VDO Peak Output Current (See Figures 14 and 18) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25°C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 6) Iload = 300 mA (Note 6) Iload = 50 mA Iload = 0.1 mA mV 340 230 110 10 500 700 800 mA 900 mA 160/10 °C IGND 9.0 4.6 0.8 − In Dropout Vin = 2.4 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Vnoise Power Good Voltage Low Threshold Hysteresis High Threshold Velft 14 7.5 2.5 220 mA 500 mA 1.0 mA 56 35 93 95 2 97 mA mVrms mVrms % of Vout 99 Power Good Pin Voltage Saturation (Ief − 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1.0 mA tef 50 ms Power Good Blanking Time (Note 7) Shutdown Threshold Voltage ON Threshold Voltage OFF VSD SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD Output Current In Shutdown Mode, Vout = 0 V Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.5 V) 2.0 0.4 V V 0.07 1.0 mA IOSD 0.07 1.0 mA IOUTR 10 mA 5. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. TA must be greater than 0°C. 7. Can be disabled per customer request. www.onsemi.com 6 NCV8537 ELECTRICAL CHARACTERISTICS − 3.3 V (Vout = 3.3 V typical, Vin = 3.7 V, TA = −40°C to +125°C, unless otherwise noted, Note 8) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.90% 3.27 3.3 0.90% 3.33 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.40% 3.254 3.3 1.40% 3.346 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.50% 3.25 3.3 1.50% 3.35 V Line Regulation Vin = 3.7 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.7 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 14) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25°C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 8) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 3.7 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGND 500 700 IGNDsh Vnoise Power Good Voltage Low Threshold Hysteresis High Threshold Velft Power Good Pin Voltage Saturation (Ief = 1.0 mA) Vefdo Power Good Pin Leakage Power Good Blanking Time (Note 9) 800 mA 900 mA 160/10 9 4.6 0.8 − Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF mV 340 230 110 10 °C 14 7.5 2.5 220 mA 500 mA 1 mA mVrms 69 46 93 95 2 97 mA % of Vout 99 200 mV Iefleak 1 mA tef 50 ms Shutdown Threshold Voltage ON Threshold Voltage OFF VSD V SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD 0.07 1 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.3 V) IOUTR 10 2 0.4 mA 8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. Can be disabled per customer request. www.onsemi.com 7 NCV8537 ELECTRICAL CHARACTERISTICS − 5 V (Vout = 5.0 V typical, Vin = 5.4 V, TA = −40°C to +125°C, unless otherwise noted, Note 10) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin Vin = 5.4 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.90% 4.955 5 0.90% 5.045 V Output Voltage (Accuracy) Vin = 5.4 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.40% 4.93 5 1.40% 5.07 V Output Voltage (Accuracy) Vin = 5.4 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.50% 4.925 5 1.50% 5.075 V Line Regulation Vin = 5.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 5.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 14) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25°C Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 10) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = 3.2 V, Iload = 0.1 mA In Shutdown VSD = 0 V IGND 340 230 110 10 500 700 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 830 mA 930 mA 160/10 9 4.6 0.8 − Vnoise mV °C 14 7.5 2.5 220 mA 500 mA 1 mA mA mVrms 93 58 Power Good Voltage Low Threshold Hysteresis High Threshold Velft Power Good Pin Voltage Saturation (Ief = 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1 mA tef 50 ms Power Good Blanking Time (Note 11) 93 95 2 97 % of Vout 99 Shutdown Threshold Voltage ON Threshold Voltage OFF VSD V SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin ISD 0.07 1 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 5 V) IOUTR 10 2 0.4 mA 10. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. Can be disabled per customer request. www.onsemi.com 8 NCV8537 ELECTRICAL CHARACTERISTICS − ADJUSTABLE (Vout = 1.25 V typical, Vin = 2.9 V, TA = −40°C to +125°C, unless otherwise noted, Note 12) Characteristic Symbol Min Typ Max Unit Reference Voltage (Accuracy) Vin = 2.9 V to Vout +4.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vref −0.90% 1.239 1.25 0.90% 1.261 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vref −1.40% 1.233 1.25 1.40% 1.268 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vref −1.50% 1.231 1.25 1.50% 1.269 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (Vout = 2.5 V − 10 V) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 14) Ipk Short Output Current (See Figure 14) Vin < 7 V, TA = 25°C Vout v 3.3 V Vout > 3.3 V Isc Thermal Shutdown / Hysteresis TJ Ground Current In Regulation Iload = 500 mA (Note 12) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA In Dropout Vin = Vout + 0.1 V or 2.9 V (whichever is higher), Iload = 0.1 mA In Shutdown VSD = 0 V Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF mV 340 230 110 10 500 700 830 900 930 160/ 10 mA mA °C IGND 9 4.6 0.8 IGNDsh Vnoise 14 7.5 2.5 220 mA 500 mA 1 mA mA mVrms 69 46 Power Good Voltage Low Threshold Hysteresis High Threshold Velft Power Good Pin Voltage Saturation (Ief = 1.0 mA) Vefdo 200 mV Power Good Pin Leakage Iefleak 1 mA tef 50 ms Power Good Pin Blanking Time (Note 13) Shutdown Threshold Voltage ON Threshold Voltage OFF VSD SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin Vin v 5.4 V Vin > 5.4 V ISD 93 95 2 97 % of Vout 99 V 2 0.4 0.07 1 5 1 Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = Vout (nom) v 7 V) IOUTR 1 mA mA mA 12. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 13. Can be disabled per customer request. www.onsemi.com 9 NCV8537 2.52 VIN = 2.9 V IOUT = 0 1.84 1.83 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 1.85 1.82 1.81 1.8 VOUT = 1.8 V 1.79 1.78 1.77 2.51 2.505 2.5 1.75 −40 2.49 2.485 2.48 −20 0 20 40 60 80 100 120 2.47 −40 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature 1.8 V Version Figure 6. Output Voltage vs. Temperature 2.5 V Version 5.1 3.310 VOUT, OUTPUT VOLTAGE (V) VIN = 3.7 V IOUT = 0 3.315 VOUT, OUTPUT VOLTAGE (V) −20 TA, TEMPERATURE (°C) 3.320 3.305 3.300 VOUT = 3.3 V 3.295 3.290 3.285 3.280 3.275 3.270 −40 −20 0 20 40 60 80 100 120 VIN = 5.4 V IOUT = 0 5.05 5 VOUT = 5.0 V 4.95 4.9 4.85 −40 140 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 7. Output Voltage vs. Temperature 3.3 V Version Figure 8. Output Voltage vs. Temperature 5.0 V Version 900 400 800 VDO, DROPOUT VOLTAGE (mV) VDO, DROPOUT VOLTAGE (mV) VOUT = 2.5 V 2.495 2.475 1.76 700 600 500 mA 500 400 300 mA 300 200 50 mA 100 0 VIN = 2.9 V IOUT = 0 2.515 0 20 40 60 80 100 120 350 300 300 mA 200 150 50 mA 100 50 0 140 500 mA 250 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 9. Dropout Voltage vs. Temperature 1.8 V Version Figure 10. Dropout Voltage vs. Temperature 2.5 V Version www.onsemi.com 10 NCV8537 350 VDO, DROPOUT VOLTAGE (mV) VDO, DROPOUT VOLTAGE (mV) 400 350 300 500 mA 250 300 mA 200 150 50 mA 100 50 0 0 20 40 60 80 100 120 300 500 mA 250 300 mA 200 150 50 mA 100 50 0 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 11. Dropout Voltage vs. Temperature 3.3 V Version Figure 12. Dropout Voltage vs. Temperature 5.0 V Version 1000 900 700 Ipk 600 Vout (V) Ipk (mA), Isc (mA) 0.97 Vout Isc 800 500 400 300 200 VIN = 2.9 V VOUT = 1.8 V 100 0 0 20 40 60 80 100 120 Ipk Isc Iout (mA) (For specific values of Ipk and Isc, please refer to Figure 13) 140 TA, TEMPERATURE (°C) Figure 13. Peak and Short Current vs. Temperature Figure 14. Output Voltage vs. Output Current 12 VIN = 2.9 V VOUT = 1.8 V 10 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) 12 500 mA 8 6 300 mA 4 2 0 0 50 mA 20 40 60 80 100 TA, TEMPERATURE (°C) 120 8 6 4 2 0 140 VIN = 2.9 V VOUT = 1.8 V TA = 25°C 10 0 0.1 0.2 0.3 0.4 IOUT, OUTPUT CURRENT (A) Figure 15. Ground Current vs. Temperature Figure 16. Ground Current vs. Output Current www.onsemi.com 11 0.5 NCV8537 0.8 25°C 0.7 0°C IOUT, OUTPUT CURRENT (A) IOUT, OUTPUT CURRENT (A) 0.8 0.6 0.5 −20°C −40°C 0.4 0.3 0.2 VIN = 2.9 V VOUT = 1.8 V 0.1 0.0 3.6 3.4 3.2 3 2.8 2.6 2.4 0.3 0.2 0.1 3.4 3.3 3.2 Iout = 50 mA 70 60 Iout = 0.5 A 50 40 Iout = 0.25 A 30 VIN = 2.9 V +0.5 VPP Modulation VOUT = 1.25 V TA = 25°C 100 2.9 2.8 1k 10k 100k F, FREQUENCY (Hz) 70 VIN = 3.4 V +0.5 VPP Modulation VOUT = 2.5 V TA = 25°C 60 Iout = 50 mA 80 40 20 NOISE DENSITY (nV/√HZ) 500 Cnr = 0 nF 300 Cnr = 10 nF VIN = 2.9 V VOUT = 1.25 V TA = 25°C 100 1k 10k 100k 1k 10k 100k F, FREQUENCY (Hz) 1M Figure 21. PSRR vs. Frequency 2.5 V Version 500 200 Iout = 0.25 A 10 600 400 Iout = 0.5 A 30 0 100 1M 2.7 50 600 0 10 3 Figure 18. Output Current Capability for the 2.5 V Version 80 100 3.1 Figure 17. Output Current Capability for the 1.8 V Version Figure 20. PSRR vs. Frequency Adjustable Version NOISE DENSITY (nV/√HZ) VIN = 2.9 V VOUT = 2.5 V VIN, INPUT VOLTAGE (V) 90 10 −40°C −20°C 0.4 VIN, INPUT VOLTAGE (V) PSRR, RIPPLE REJECTION (dB) PSRR, RIPPLE REJECTION (dB) 0.5 90 20 0°C 0.6 0.0 3.5 2.2 100 0 25°C 0.7 400 Cnr = 0 nF 300 200 100 0 10 1M Cnr = 10 nF VIN = 2.9 V VOUT = 2.5 V TA = 25°C 100 1k 10k 100k 1M F, FREQUENCY (Hz) F, FREQUENCY (Hz) Figure 22. Output Noise Density Adjustable Version Figure 23. Output Noise Density 2.5 V Version www.onsemi.com 12 NCV8537 Figure 24. Power Good Activation Figure 25. Power Good Inactivation 300 15 250 10 qJA (°C/W) MAXIMUM ESR (W) Vin at Data Sheet Test Conditions, 25°C, 1 mF Capacitance Unstable Area 5.0 200 150 1 oz CF 100 2 oz CF 50 Stable Area 0 0 100 200 300 400 0 500 0 100 200 300 400 500 600 700 OUTPUT CURRENT (mA) COPPER HEAT SPREADING AREA (mm2) Figure 26. Stability with ESR vs. Output Current Figure 27. DFN10 Self−Heating Thermal Characterstics as a Function of Copper Area on the PCB NOTE: Typical characteristics were measured with the same conditions as electrical characteristics. www.onsemi.com 13 NCV8537 APPLICATIONS INFORMATION Reverse Bias Protection temperature is exceeded. This feature provides protection from a catastrophic device failure due to accidental overheating. This protection feature is not intended to be used as a substitute to heat sinking. The maximum power that can be dissipated, can be calculated with the equation below: Reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. Normally in a bipolar LDO all the current will flow from the output pin to input pin through the PN junction with limited current capability and with the potential to destroy the IC. Due to an improved architecture, the NCV8537 can withstand up to 7.0 V on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of mA) flowing from the output pin to ground for infinite duration. PD + TJ(max) * TA RqJA (eq. 1) For improved thermal performance, contact the factory for the DFN package option. The DFN package includes an exposed metal pad that is specifically designed to reduce the junction to air thermal resistance, RqJA. Adjustable Operation The output voltage can be set by using a resistor divider as shown in Figure 2 with a range of 1.25 to 10 V. The appropriate resistor divider can be found by solving the equation below. The recommended current through the resistor divider is from 10 mA to 100 mA. This can be accomplished by selecting resistors in the kW range. As result, the Iadj * R2 becomes negligible in the equation and can be ignored. Input Capacitor An input capacitor of at least 1.0 mF, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit’s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regular’s input terminals. V out + 1.25 * (1 ) R3ńR2) ) I adj * R2 Output Capacitor (eq. 2) Power Good Operation The NCV8537 remains stable with any type of capacitor as long as it fulfills its 1.0 mF requirement. There are no constraints on the minimum ESR and it will remain stable up to an ESR of 5.0 W. Larger capacitor values will improve the noise rejection and load transient response. The Power Good pin on the NCV8537 will produce a logic Low when it drops below the nominal output voltage. Refer to the electrical characteristics for the threshold values at which point the Power Good goes Low. When the NCV8537 is above the nominal output voltage, the Power Good will remain at logic High. The external pullup resistor needs to be connected between Vin and the Power Good pin. A resistor of approximately 100 kW is recommended to minimize the current consumption. No pullup resistor is required if the Power Good output is not being used. The Power Good does not function during thermal shutdown and when the part is disabled. Noise Reduction Pin Output noise can be greatly reduced by connecting a 10 nF capacitor (Cnr) between the noise reduction pin and ground (see Figure 1). In applications where very low noise is not required, the noise reduction pin can be left unconnected. Dropout Voltage The voltage dropout is measured at 97% of the nominal output voltage. Thermal Considerations Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction www.onsemi.com 14 NCV8537 ORDERING INFORMATION Device* Voltage Option Marking NCV8537MN180R2G 1.8 V V8537 180 NCV8537MN250R2G 2.5 V V8537 250 NCV8537MN330R2G 3.3 V V8537 330 NCV8537MN500R2G 5.0 V V8537 500 NCV8537MNADJR2G Adj V8537 ADJ NCV8537ML180R2G 1.8 V L8537 180 NCV8537ML250R2G 2.5 V L8537 250 NCV8537ML330R2G 3.3 V L8537 330 NCV8537ML500R2G 5.0 V L8537 500 NCV8537MLADJR2G Adj L8537 ADJ Package Package Shipping† DFN10 (Pb−Free) Non−Wettable Flank 3000 / Tape & Reel DFN10 (Pb−Free) Wettable Flank SLP Process 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 15 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE F SCALE 2:1 DATE 16 DEC 2021 GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot *This information is generic. Please refer to Y = Year device data sheet for actual part marking. W = Work Week Pb−Free indicator, “G” or microdot “G”, may G = Pb−Free Package or may not be present. Some products may (Note: Microdot may be in either location) not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON03161D Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN10, 3X3 MM, 0.5 MM PITCH PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW10 3x3, 0.5P CASE 507AM ISSUE A DATE 12 JUN 2018 GENERIC MARKING DIAGRAM* XXXXX XXXXX ALYWG G DOCUMENT NUMBER: DESCRIPTION: XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 98AON85414G DFNW10 3x3, 0.5P *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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