0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
NCV8716MT50TBG

NCV8716MT50TBG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    WFDFN6_EP

  • 描述:

    IC REG LDO 5V 80MA 6XDFN

  • 数据手册
  • 价格&库存
NCV8716MT50TBG 数据手册
NCV8716 Low Dropout Regulator Ultra-Low Iq, Wide Input Voltage 80 mA The NCV8716 is 80 mA LDO Linear Voltage Regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range) and a wide input voltage range (up to 24 V). The regulator incorporates several protection features such as Thermal Shutdown and Current Limiting. Features • Operating Input Voltage Range: 2.5 V to 24 V • Fixed Voltage Options Available: • • • • • • • • www.onsemi.com MARKING DIAGRAMS 1 WDFN6 CASE 511BR XX M XX = Specific Device Code M = Date Code 1.5 V to 5.0 V Ultra Low Quiescent Current: Max. 5.8 mA over Temperature ±2% Accuracy over Full Load, Line and Temperature Variations PSRR: 60 dB at 100 kHz Noise: 200 mVRMS from 200 Hz to 100 kHz Thermal Shutdown and Current Limit Protection Available in wDFN6, 2x2x0.8 mm Package NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to +125°C Ambient Operating Temperature Range These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant PIN CONNECTIONS 1 2 3 6 EXP 5 4 WDFN6 2x2 mm (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 17 of this data sheet. Typical Applications • Portable Equipment • Communication Systems Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2016 October, 2019 − Rev. 6 1 Publication Order Number: NCV8716/D NCV8716 IN UVLO BANDGAP REFERENCE THERMAL SHUTDOWN MOSFET DRIVER WITH CURRENT LIMIT OUT EEPROM GND Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. Pin Name Description 6 OUT Regulated output voltage pin. A small 0.47 mF ceramic capacitor is needed from this pin to ground to assure stability. 2 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 3, EXP GND Power supply ground. Exposed pad EXP must be tied with GND pin 3. 4 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 5 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 1 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. Table 2. ABSOLUTE MAXIMUM RATINGS Rating Input Voltage (Note 1) Output Voltage Output Short Circuit Duration Symbol Value Unit VIN −0.3 to 24 V VOUT −0.3 to 6 V tSC Indefinite s TJ(MAX) 150 °C TA −40 to 125 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Maximum Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latch up Current Maximum Rating tested per JEDEC standard: JESD78. Table 3. THERMAL CHARACTERISTICS Rating Thermal Characteristics, wDFN6, 2 mm x 2 mm Thermal Resistance, Junction−to−Air Symbol Value Unit RqJA 120 °C/W Table 4. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Input Voltage VIN 2.5 24 V Junction Temperature TJ −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCV8716 Table 5. ELECTRICAL CHARACTERISTICS Voltage version 1.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 5) Test Conditions Symbol Min Operating Input Voltage IOUT ≤ 10 mA VIN 2.5 Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 1.455 Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Parameter 10 mA < IOUT < 80 mA Typ 3.0 Max Unit 24 V 24 1.5 1.545 V RegLINE 20 25 mV IOUT = 0 mA to 80 mA RegLOAD 20 25 mV (Note 6) IOUT Dropout voltage (Note 3) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 4) Thermal Shutdown Hysteresis (Note 4) 0 < IOUT < 80 mA, VIN = 24 V 110 mA IGND 3.4 PSRR 56 dB VOUT = 1.5 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 120 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH VIN = 3.0 V, VOUT = 1.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz − 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Not Characterized at VIN = 3.0 V, VOUT = 1.5 V, IOUT = 80 mA 4. Guaranteed by design and characterization. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Respect SOA www.onsemi.com 3 NCV8716 Table 6. ELECTRICAL CHARACTERISTICS Voltage version 1.8 V −40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 9) Test Conditions Symbol Min Operating Input Voltage IOUT ≤ 10 mA VIN 2.8 Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 1.746 Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Parameter 10 mA < IOUT < 80 mA Typ 3.0 Max Unit 24 V 24 1.8 1.854 V RegLINE 15 20 mV IOUT = 0 mA to 80 mA RegLOAD 15 20 mV (Note 10) IOUT Dropout voltage (Note 7) Maximum Output Current Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 8) Thermal Shutdown Hysteresis (Note 8) 0 < IOUT < 80 mA, VIN = 24 V 110 mA IGND 3.4 PSRR 60 dB VOUT = 1.8 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 140 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH VIN = 3.0 V, VOUT = 1.8 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz − 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Not Characterized at VIN = 3.0 V, VOUT = 1.8 V, IOUT = 80 mA 8. Guaranteed by design and characterization. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 10. Respect SOA www.onsemi.com 4 NCV8716 Table 7. ELECTRICAL CHARACTERISTICS Voltage version 2.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 13) Parameter Operating Input Voltage Test Conditions Symbol Min IOUT = 80 mA VIN 3.5 2.45 Typ Max Unit 24 V Output Voltage Accuracy 3.5 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.5 2.55 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1mA RegLINE 15 20 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 15 20 mV Dropout voltage (Note 11) VDO = VIN – (VOUT(NOM) – 125 mV) IOUT = 80 mA VDO 640 mV Maximum Output Current (Note 14) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VN 160 mVrms Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 12) Thermal Shutdown Hysteresis (Note 12) VIN = 3.5 V, VOUT = 2.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz VOUT = 2.5 V, IOUT = 80 mA f = 200 Hz to 100 kHz Temperature increasing from TJ = +25°C TSD Temperature falling from TSD TSDH 400 110 mA 5.8 155 − 25 mA °C − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Characterized when VOUT falls 125 mV below the regulated voltage and only for devices with VOUT = 2.5 V 12. Guaranteed by design and characterization. 13. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. Respect SOA www.onsemi.com 5 NCV8716 Table 8. ELECTRICAL CHARACTERISTICS Voltage version 2.8 V −40°C ≤ TJ ≤ 125°C; VIN = 3.8 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 17) Parameter Test Conditions Symbol Min Operating Input Voltage IOUT = 80 mA VIN 3.8 Output Voltage Accuracy 3.8 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.744 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Max Unit 24 V 2.8 2.856 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 15) VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 80 mA VDO 600 mV Maximum Output Current (Note 18) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 58 dB VOUT = 2.8 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 180 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 16) Thermal Shutdown Hysteresis (Note 16) VIN = 3.8 V, VOUT = 2.8 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz Typ 380 110 − mA 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 15. Characterized when VOUT falls 140 mV below the regulated voltage and only for devices with VOUT = 2.8 V 16. Guaranteed by design and characterization. 17. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 18. Respect SOA www.onsemi.com 6 NCV8716 Table 9. ELECTRICAL CHARACTERISTICS Voltage version 3.0 V −40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 21) Parameter Test Conditions Symbol Min Operating Input Voltage IOUT = 80 mA VIN 4.0 Output Voltage Accuracy 4.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.94 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Max Unit 24 V 3.0 3.06 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 19) VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 80 mA VDO 580 mV Maximum Output Current (Note 22) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 58 dB VOUT = 3.0 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 190 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 20) Thermal Shutdown Hysteresis (Note 20) VIN = 4.0 V, VOUT = 3.0 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz Typ 370 110 − mA 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 19. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 3.0 V 20. Guaranteed by design and characterization. 21. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 22. Respect SOA www.onsemi.com 7 NCV8716 Table 10. ELECTRICAL CHARACTERISTICS Voltage version 3.3 V −40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 25) Parameter Test Conditions Symbol Min Operating Input Voltage IOUT = 80 mA VIN 4.3 Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 3.234 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Max Unit 24 V 3.3 3.366 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 23) VDO = VIN – (VOUT(NOM) – 165 mV) IOUT = 80 mA VDO 560 mV Maximum Output Current (Note 26) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 60 dB VOUT = 4.3 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 200 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 24) Thermal Shutdown Hysteresis (Note 24) VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz Typ 350 110 − mA 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 23. Characterized when VOUT falls 165 mV below the regulated voltage and only for devices with VOUT = 3.3 V 24. Guaranteed by design and characterization. 25. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 26. Respect SOA www.onsemi.com 8 NCV8716 Table 11. ELECTRICAL CHARACTERISTICS Voltage version 5.0 V −40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 29) Parameter Test Conditions Symbol Min Operating Input Voltage IOUT = 80 mA VIN 6.0 Output Voltage Accuracy 6.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 4.9 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Max Unit 24 V 5.0 5.1 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 27) VDO = VIN – (VOUT(NOM) – 250 mV) IOUT = 80 mA VDO 500 mV Maximum Output Current (Note 30) IOUT 0 < IOUT < 80 mA, VIN = 24 V IGND 3.4 PSRR 54 dB VOUT = 5.0 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 220 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH Ground current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 28) Thermal Shutdown Hysteresis (Note 28) VIN = 6.0 V, VOUT = 5.0 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz Typ 310 110 − mA 25 5.8 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 27. Characterized when VOUT falls 250 mV below the regulated voltage and only for devices with VOUT = 5.0 V 28. Guaranteed by design and characterization. 29. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 30. Respect SOA www.onsemi.com 9 NCV8716 TYPICAL CHARACTERISTICS 1.514 2.510 OUTPUT VOLTAGE (V) 1.512 OUTPUT VOLTAGE (V) 2.514 IOUT = 1 mA CIN = COUT = 1 mF 1.51 1.508 VIN = (5 V − 24 V) VIN = 3.0 V 1.506 1.504 2.506 VIN = (5 V − 24 V) 2.502 2.498 2.494 1.502 1.5 IOUT = 1 mA CIN = COUT = 1 mF VIN = 3.5 V −40 −20 0 20 40 60 80 100 2.490 −40 −20 120 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) VIN = (4.3 V − 24 V) 3.300 3.296 3.292 IOUT = 1 mA CIN = COUT = 1 mF 3.288 −20 0 100 120 20 40 60 IOUT = 1 mA CIN = COUT = 1 mF VIN = (8 V − 24 V) 4.985 VIN = 6.0 V 4.975 4.965 4.955 80 100 4.945 −40 −20 120 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. NCV8716x33xxx Output Voltage vs. Temperature Figure 6. NCV8716x50xxx Output Voltage vs. Temperature 2.52 20 V 1.508 15 V 5.0 V 2.51 1.506 1.504 24 V 1.502 TA = 25°C CIN = COUT = 1 mF VIN = 3.5 V 70 80 15 V 5.0 V 2.49 2.48 2.46 20 30 40 50 60 OUTPUT CURRENT (mA) 24 V 10 V 2.50 TA = 25°C CIN = COUT = 1 mF 2.47 1.498 10 20 V 10 V OUTPUT VOLTAGE (V) VIN = 3.0 V OUTPUT VOLTAGE (V) 80 Figure 4. NCV8716x25xxx Output Voltage vs. Temperature 4.995 0 60 Figure 3. NCV8716x15xxx Output Voltage vs. Temperature 3.304 1.500 40 TEMPERATURE (°C) 5.005 1.510 20 TEMPERATURE (°C) 3.308 3.284 −40 0 0 10 20 30 40 50 60 70 OUTPUT CURRENT (mA) Figure 7. NCV8716x15xxx Output Voltage vs. Output Current Figure 8. NCV8716x25xxx Output Voltage vs. Output Current www.onsemi.com 10 80 NCV8716 5.000 3.300 4.995 3.296 VIN = 4.3 V 5.0 V 3.292 3.288 10 V 0 10 20 15 V 20 V TA = 25°C CIN = COUT = 1 mF 3.284 3.280 30 40 50 60 70 4.985 8.0 V 15 V 0 10 20 30 40 50 60 70 80 OUTPUT CURRENT (mA) Figure 9. NCV8716x33xxx Output Voltage vs. Output Current Figure 10. NCV8716x50xxx Output Voltage vs. Output Current 0.6 TA = 25°C TA = −40°C 0.2 0.1 10 20 30 40 50 60 70 0.5 TA = 125°C CIN = COUT = 1 mF 0.4 TA = 25°C 0.3 0.2 TA = −40°C 0.1 0 80 0 10 20 30 40 50 60 70 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 11. NCV8716x25xxx Dropout Voltage vs. Output Current Figure 12. NCV8716x33xxx Dropout Voltage vs. Output Current 80 30 0.6 CIN = COUT = 1 mF 0.5 QUIESCENT CURRENT (mA) DROPOUT VOLTAGE (V) 20 V 24 V OUTPUT CURRENT (mA) 0.3 TA = 125°C 0.4 TA = 25°C 0.3 0.2 TA = −40°C 0.1 0 10 V 4.980 4.970 80 CIN = COUT = 1 mF 0 VIN = 6.0 V 24 V 0.4 0 4.990 TA = 125°C 0.5 TA = 25°C CIN = COUT = 1 mF 4.975 0.6 DROPOUT VOLTAGE (V) OUTPUT VOLTAGE (V) 3.304 DROPOUT VOLTAGE (V) OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS 0 10 20 30 40 50 60 70 20 15 10 IOUT = 80 mA 5 0 80 TA = 25°C CIN = COUT = 1 mF 25 IOUT = 0 0 5 10 15 20 OUTPUT CURRENT (mA) INPUT VOLTAGE (V) Figure 13. NCV8716x50xxx Dropout Voltage vs. Output Current Figure 14. NCV8716x15xxx Ground Current vs. Input Voltage www.onsemi.com 11 25 NCV8716 TYPICAL CHARACTERISTICS 40 TA = 25°C CIN = COUT = 1 mF 25 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) 30 20 15 10 IOUT = 80 mA 5 0 IOUT = 0 0 5 10 15 20 15 10 IOUT = 80 mA 5 IOUT = 0 0 5 10 15 20 25 Figure 15. NCV8716x25xxx Ground Current vs. Input Voltage Figure 16. NCV8716x50xxx Ground Current vs. Input Voltage 5.5 TA = 25°C CIN = COUT = 1 mF 25 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) 20 INPUT VOLTAGE (V) 20 15 10 IOUT = 80 mA 5 5.0 IOUT = 0 CIN = COUT = 1 mF 4.5 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 3.0 V 3.0 IOUT = 0 0 5 10 15 20 2.5 −40 25 −20 0 20 40 60 80 100 120 INPUT VOLTAGE (V) TEMPERATURE (°C) Figure 17. NCV8716x33xxx Ground Current vs. Input Voltage Figure 18. NCV8716x15xxx Quiescent Current vs. Temperature 5.5 5.5 IOUT = 0 CIN = COUT = 1 mF 5.0 4.5 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) 25 INPUT VOLTAGE (V) 30 0 30 0 25 TA = 25°C CIN = COUT = 1 mF 35 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 3.5 V 3.0 2.5 −40 −20 0 20 40 60 80 100 5.0 IOUT = 0 CIN = COUT = 1 mF 4.5 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 4.3 V 3.0 2.5 −40 −20 120 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 19. NCV8716x25xxx Quiescent Current vs. Temperature Figure 20. NCV8716x33xxx Quiescent Current vs. Temperature www.onsemi.com 12 NCV8716 TYPICAL CHARACTERISTICS 100 IOUT = 0 CIN = COUT = 1 mF 5.0 4.5 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 6.0 V IOUT = 10 mA 60 40 IOUT = 80 mA 20 3.0 2.5 −40 −20 0 20 40 60 80 100 0 120 0.1 1.0 10.0 100.0 TEMPERATURE (°C) FREQUENCY (kHz) Figure 21. NVP716x50xxx Quiescent Current vs. Temperature Figure 22. NCV8716x15xxx PSRR vs. Frequency 100 100 VIN = 3.5 V + 200 mVpp modulation COUT = 10 mF TA = 25°C IOUT = 1 mA 60 40 60 IOUT = 1 mA 40 IOUT = 10 mA IOUT = 80 mA IOUT = 80 mA 20 1000.0 VIN = 4.3 V + 200 mVpp modulation COUT = 10 mF TA = 25°C 80 PSRR (dB) 80 PSRR (dB) VIN = 3.0 V + 200 mVpp modulation COUT = 10 mF TA = 25°C IOUT = 1 mA 80 PSRR (dB) QUIESCENT CURRENT (mA) 5.5 20 IOUT = 10 mA 0 0.1 1 10 100 0 1000 1 10 FREQUENCY (kHz) Figure 23. NCV8716x25xxx PSRR vs. Frequency Figure 24. NCV8716x33xxx PSRR vs. Frequency 1.6 VIN = 6.0 V + 200 mVpp modulation COUT = 10 mF TA = 25°C 60 1.2 IOUT = 1 mA IOUT = 10 mA 40 1.0 0.8 0.6 0.4 IOUT = 80 mA 20 COUT = 4.7 mF 0.2 0.1 1 10 100 1000 1000 IOUT = 80 mA TA = 25°C VIN = 3.0 V 1.4 mV/sqrt (Hz) 80 0 100 FREQUENCY (kHz) 100 PSRR (dB) 0.1 COUT = 10 mF 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 25. NCV8716x50xxx PSRR vs. Frequency Figure 26. NCV8716x15xxx Output Spectral Noise Density vs. Frequency www.onsemi.com 13 NCV8716 TYPICAL CHARACTERISTICS 4.0 5.0 4.0 3.5 2.5 mV/sqrt (Hz) mV/sqrt (Hz) 3.0 2.0 1.5 3.0 2.5 2.0 1.5 1.0 COUT = 4.7 mF 0.5 0 IOUT = 80 mA TA = 25°C VIN = 4.3 V 4.5 IOUT = 80 mA TA = 25°C VIN = 3.5 V 3.5 1.0 COUT = 10 mF 0.01 0.1 1 10 100 1000 0.5 0 COUT = 4.7 mF COUT = 10 mF 0.01 0.1 1 10 100 FREQUENCY (kHz) FREQUENCY (kHz) Figure 27. NCV8716x25xxx Output Spectral Noise Density vs. Frequency Figure 28. NCV8716x33xxx Output Spectral Noise Density vs. Frequency 8 IOUT = 80 mA TA = 25°C VIN = 6.0 V 7 mV/sqrt (Hz) 6 5 4 3 2 COUT = 4.7 mF 1 0 1000 COUT = 10 mF 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 29. NCV8716x50xxx Output Spectral Noise Density vs. Frequency Figure 30. Load Transient Response Figure 31. Load Transient Response Figure 32. Load Transient Response www.onsemi.com 14 NCV8716 TYPICAL CHARACTERISTICS Figure 33. Load Transient Response Figure 34. Line Transient Response Figure 35. Line Transient Response Figure 36. Line Transient Response Figure 37. Line Transient Response Figure 38. Input Voltage Turn−On Response www.onsemi.com 15 NCV8716 TYPICAL CHARACTERISTICS Figure 40. Input Voltage Turn−On Response Figure 39. Input Voltage Turn−On Response www.onsemi.com 16 NCV8716 APPLICATIONS INFORMATION Power Dissipation and Heat sinking The NCV8716 is the member of new family of Wide Input Voltage Range Low Dropout Regulators which delivers Ultra Low Ground Current consumption, Good Noise and Power Supply Rejection Ratio Performance. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCV8716 can handle is given by: Input Decoupling (CIN) It is recommended to connect at least 0.1 mF Ceramic X5R or X7R capacitor between IN and GND pin of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. P D(MAX) + ƪTJ(MAX) * TAƫ (eq. 1) R qJA The power dissipated by the NCV8716 for given application conditions can be calculated from the following equations: P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ (eq. 2) or Output Decoupling (COUT) The NCV8716 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 0.47 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. V IN(MAX) [ P D(MAX) ) ǒV OUT I OUTǓ I OUT ) I GND (eq. 3) For reliable operation, junction temperature should be limited to +125°C maximum. Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV8716, and make traces as short as possible. ORDERING INFORMATION Device Voltage Option Marking NCV8716MT15TBG 1.5 V 7C NCV8716MT18TBG 1.8 V 7D NCV8716MT25TBG 2.5 V 7E NCV8716MT28TBG 2.8 V 7J NCV8716MT30TBG 3.0 V 7F NCV8716MT33TBG 3.3 V 7G NCV8716MT50TBG 5.0 V 7H Package Shipping† WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 17 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511BR ISSUE C DATE 01 DEC 2021 GENERIC MARKING DIAGRAM* 1 XX M XX = Specific Device Code M = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON55829E WDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
NCV8716MT50TBG 价格&库存

很抱歉,暂时无法提供与“NCV8716MT50TBG”相匹配的价格&库存,您可以联系我们找货

免费人工找货
NCV8716MT50TBG
    •  国内价格
    • 3000+4.95000

    库存:10500