NCV8718AMT500TBG

NCV8718AMT500TBG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    WDFN6

  • 描述:

    5V 300MA 24V

  • 数据手册
  • 价格&库存
NCV8718AMT500TBG 数据手册
NCV8718 Voltage Regulator - Low Dropout, Low Iq, Wide Input 300 mA The NCV8718 is 300 mA LDO Linear Voltage Regulator. It is a very stable and accurate device with ultra−low quiescent current consumption (typ. 4 mA over the full temperature range) and a wide input voltage range (up to 24 V). The regulator incorporates several protection features such as Thermal Shutdown and Current Limiting. www.onsemi.com MARKING DIAGRAMS Features • • • • • • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 24 V Fixed Voltage Options Available: 1.2 V to 5 V (upon request) Adjustable Voltage Option from 1.2 V to 5 V Ultra−Low Quiescent Current: typ. 4 mA over Temperature ±2% Accuracy Over Full Load, Line and Temperature Variations PSRR: 60 dB at 1 kHz Noise: typ. 36 mVRMS from 100 Hz to 100 kHz Stable with Small 1 mF Ceramic Capacitor Soft−start to Reduce Inrush Current and Overshoots Thermal Shutdown and Current Limit Protection SOA Limiting for High Vin / High Iout – Static / Dynamic Active Discharge Option Available (upon request) Available in WDFN6 2x2 mm Package NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable; Device Temperature Grade 1: −40°C to +125°C Ambient Operating Temperature Range These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant WDFN6 MT SUFFIX CASE 511BR 1 XX M 1 XX = Specific Device Code M = Date Code PIN CONNECTIONS OUT 1 NC/ADJ 2 GND 3 GND 6 IN 5 NC 4 EN WDFN6 2x2 mm (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Typical Applications • • • • • • Wireless Chargers Portable Equipment Communication Systems In−Vehicle Networking Telematics, Infotainment and Clusters General Purpose Automotive V IN C IN IN V OUT OUT NCV8718 1 mF Ceramic EN GND NC C OUT 1 mF Ceramic ON OFF Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2017 October, 2019 − Rev. 4 1 Publication Order Number: NCV8718/D NCV8718 IN IN EN ENABLE LOGIC BANDGAP REFERENCE EN THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT INTEGRATED SOFT−START ENABLE LOGIC THERMAL SHUTDOWN MOSFET DRIVER WITH CURRENT LIMIT INTEGRATED SOFT−START OUT OUT ADJ * ACTIVE DISCHARGE Version A only * ACTIVE DISCHARGE Version A only EN EN GND GND Fixed Version Adjustable Version Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. (WDFN6) Pin Name 6 IN 3, EXP GND 4 EN 2 NC / ADJ Fixed Version: No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. Adjustable Version: Feedback pin for set−up output voltage. Use resistor divider for voltage selection. 1 OUT Regulated output voltage pin. A small 1 mF ceramic capacitor is needed from this pin to ground to assure stability. 5 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. Description Input pin. A small capacitor is needed from this pin to ground to assure stability. Power supply ground. Enable pin. Driving this pin high turns on the regulator. Driving EN pin low puts the regulator into shutdown mode. Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) VIN −0.3 to 24 V Enable Voltage VEN −0.3 to VIN+0.3 V Output Voltage VOUT −0.3 to VIN+0.3 (max. 6) V tSC Indefinite s TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Charged Device Model (Note 2) ESDCDM 1000 V Output Short Circuit Duration Maximum Junction Temperature Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Charged Device Model tested per EIA/JESD22−C101, Field Induced Charge Model. Latch up Current Maximum Rating tested per JEDEC standard: JESD78. Latch−up is not guaranteed on ENABLE pin. Table 3. RECOMMENDED OPERATING RANGES Symbol Min Max Unit Input Voltage Rating VIN 2.5 24 V Junction Temperature TJ −40 +125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCV8718 Table 4. THERMAL CHARACTERISTICS Rating Symbol Value Unit RqJA 65 °C/W Thermal Characteristics, WDFN6, 2 mm x 2 mm Thermal Resistance, Junction−to−Air Table 5. ELECTRICAL CHARACTERISTICS -40°C ≤ TJ ≤ 125°C; VIN = 2.5 V or (VOUT + 1.0 V), whatever is greater; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 3) Test Conditions Symbol VIN −40°C ≤ TJ ≤ 125°C, VOUT < 1.8 V VOUT + 1 V < VIN < 16 V, 0.1 mA < IOUT < 300 mA (Note 5) VOUT ≥ 1.8 V VOUT −2% +2% Reference Voltage −40°C ≤ TJ ≤ 125°C, VOUT + 1 V < VIN < 16 V VADJ Reference Voltage Accuracy −40°C ≤ TJ ≤ 125°C, VOUT + 1 V < VIN < 16 V VOUT Line Regulation VOUT + 1 V ≤ VIN ≤ 16 V, Iout = 1 mA RegLINE 10 mV Load Regulation IOUT = 0.1 mA to 300 mA RegLOAD 10 mV VDO 490 mV Parameter Operating Input Voltage Output Voltage Accuracy (fixed versions) Dropout Voltage Maximum Output Current Disable Current Quiescent Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Enable Input Threshold Voltage VDO = VIN – (VOUT(NOM) – 3%), IOUT = 300 mA (Note 4) 2.1 V – 2.4 V Min Typ Max Unit 2.5 24 V −3% +3% V 1.2 −2% +2% 2.5 V − 2.7 V 335 505 2.8 V − 3.2 V 305 475 3.3 V – 4.9 V 285 450 5V 260 395 VIN = VOUT + 1 V (Note 5) ILIM VEN = 0 V, VIN = 5 V IDIS IOUT = 0 mA, −40°C ≤ TJ ≤ 125°C IOUT = 1 mA 300 mA 0.1 1.0 mA IQ 4.0 8.0 mA IGND 7.0 50 IOUT = 300 mA 300 f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz V 800 IOUT = 10 mA VIN = 3.5 V + 100 mVpp VOUT = 2.5 V IOUT = 1 mA, Cout = 1 mF V mA PSRR 70 60 41 35 dB VOUT = 1.2 V, IOUT = 10 mA f = 100 Hz to 100 kHz VN 36 mVrms Voltage increasing VEN_HI 1.2 − − − V Voltage decreasing VEN_LO − 0.4 ADJ Pin Current VIN = VOUT + 1 V IADJ 0.1 1.0 EN Pin Current VEN = 5.5 V IEN 100 nA VIN = 5.5 V, VEN = 0 V Rdis 100 W Temperature increasing from TJ = +25°C TSD 165 °C Temperature falling from TSD TSDH Active Output Discharge Resistance Thermal Shutdown Temperature (Note 6) Thermal Shutdown Hysteresis (Note 6) − 25 − mA °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 4. Voltage dropout for voltage variants below 2.1 V is given by minimum input voltage 2.5 V. 5. Respect SOA 6. Guaranteed by design and characterization. www.onsemi.com 3 NCV8718 TYPICAL CHARACTERISTICS 1.212 1.208 1.204 IOUT = 1 mA 1.200 1.196 1.192 1.188 1.184 1.180 −40 1.0 IDIS, DISABLE CURRENT (mA) 4.0 VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF COUT = 1 mF IQ, QUIESCENT CURRENT (mA) 1.216 −20 0 20 40 60 80 120 100 0.8 VIN = 24 V 0.3 VIN = 2.5 V 0.2 0.1 0 −40 −20 0 20 40 60 80 100 120 VOUT = 1.2 V CIN = 1 mF COUT = 1 mF 2.2 2.0 2 4 8 6 10 12 16 14 18 20 22 24 0.08 0.07 0.06 VEN = VIN VOUT = 1.2 V IOUT = 10 mA CIN = 1 mF COUT = 1 mF 0.05 VIN = 24 V 0.04 0.03 VIN = 2.5 V 0.02 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Disable Current vs. Temperature Figure 6. Current to Enable Pin vs. Temperature ISC, SHORT CIRCUIT CURRENT (mA) IGND, GROUND CURRENT (mA) 2.6 2.4 0.01 0 −40 30 VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF COUT = 1 mF 18 15 12 9 6 0 2.8 0.09 0.4 3 0 −40°C 3.0 0.10 0.5 21 25°C 3.2 Figure 4. Quiescent Current vs. Input Voltage 0.6 24 3.4 Figure 3. Output Voltage vs. Temperature − VOUT = 1.2 V 0.7 27 125°C 3.6 VIN, INPUT VOLTAGE (V) CIN = 1 mF COUT = 1 mF 0.9 3.8 TJ, JUNCTION TEMPERATURE (°C) IEN, ENABLE CURRENT (mA) VOUT, OUTPUT VOLTAGE (V) 1.220 1 2 3 4 5 6 7 8 9 10 640 VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF COUT = 1 mF 620 600 580 560 540 520 500 480 460 440 −40 −20 0 20 40 60 80 100 IOUT, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Ground Current vs. Output Current − VOUT = 1.2 V Figure 8. Short Circuit Current vs. Temperature www.onsemi.com 4 120 120 NCV8718 0.40 0.36 VDROP, DROPOUT VOLTAGE (V) 600 540 480 420 360 300 240 f = 50 Hz Duty = 20% CIN = 1 mF COUT = 1 mF 180 120 60 0 0 2 4 6 8 10 12 14 16 18 22 20 24 0.24 0.16 0.12 0.08 0.04 0 Figure 9. SOA Current Limit vs. Differential Voltage Figure 10. Dropout Voltage vs. Output Current − VOUT = 2.5 V 1 mA 70 60 10 mA 50 40 VIN = 3.5 V VOUT = 2.5 V CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 10 100 100 mA 1K 10K 100K 1M 10 mA 60 50 40 100 mA VIN = 12 V VOUT = 2.5 V CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 30 20 10 10 100 1K 10K 100K 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) Figure 11. Power Supply Rejection Ratio vs. Current, VIN = 3.5 V, COUT = 1 mF Figure 12. Power Supply Rejection Ratio vs. Current, VIN = 12 V, COUT = 1 mF OUTPUT VOLTAGE NOISE (nV/√Hz) 100K 10K 1K 10 1 mA 70 0 10M 100K 100 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 0.36 0.40 IOUT, OUTPUT CURRENT (A) 80 10 −40°C 0.20 80 20 125°C 25°C 0.28 90 0 OUTPUT VOLTAGE NOISE (nV/√Hz) 0.32 90 30 VOUT = 2.5 V CIN = 1 mF COUT = 1 mF VDIF, DIFFERENTIAL VOLTAGE VIN − VOUT (V) RR, RIPPLE REJECTION (dB) RR, RIPPLE REJECTION (dB) SOA CURRENT LIMITATION (mA) TYPICAL CHARACTERISTICS VIN = 2.5 V VOUT = 1.2 V IOUT = 10 mA CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 10 100 1K 10K 100K 1M 10K 1K VIN = 2.8 V VOUT = 1.8 V IOUT = 10 mA CIN = 1 mF COUT = 1 mF MLCC, X7R, 0805 100 10 10 100 1K 10K 100K FREQUENCY (Hz) FREQUENCY (Hz) Figure 13. Output Voltage Noise Spectral Density for VOUT = 1.2 V, IOUT = 10 mA, COUT = 1 mF Figure 14. Output Voltage Noise Spectral Density for VOUT = 1.8 V, IOUT = 10 mA, COUT = 1 mF www.onsemi.com 5 1M NCV8718 APPLICATIONS INFORMATION Power Dissipation and Heat Sinking The NCV8718 is the member of new family of Wide Input Voltage Range Low Dropout Regulators which delivers Ultra Low Ground Current consumption, Good Noise and Power Supply Rejection Ratio Performance. The NCV8718 incorporates EN pin and soft−start feature for simple controlling by microprocessor or logic. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. For reliable operation junction temperature should be limited to +125°C. The maximum power dissipation the NCV8718 can handle is given by: Input Decoupling (CIN) It is recommended to connect at least 1 mF ceramic X5R or X7R capacitor between IN and GND pin of the device. This capacitor will provide a low impedance path for any unwanted AC signals or noise superimposed onto constant input voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR capacitors will improve the overall line transient response. P D(MAX) + ƪTJ(MAX) * TAƫ (eq. 1) R qJA The power dissipated by the NCV8718 for given application conditions can be calculated from the following equations: P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ (eq. 2) or Output Decoupling (COUT) The NCV8718 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 1 mF or greater. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. V IN(MAX) [ P D(MAX) ) ǒV OUT I OUTǓ I OUT ) I GND (eq. 3) Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCV8718, and make traces as short as possible. ORDERING INFORMATION Device Part No. Voltage Option Marking NCV8718AMTADJTBG Adj. GA NCV8718AMT180TBG 1.8 V GP NCV8718AMT300TBG 3.0 V GQ NCV8718AMT330TBG 3.3 V GR NCV8718AMT500TBG 5.0 V GM NCV8718BMTADJTBG Adj. GC NCV8718BMT180TBG 1.8 V GU NCV8718BMT300TBG 3.0 V GV NCV8718BMT330TBG 3.3 V GW NCV8718BMT500TBG 5.0 V GE Option Package Shipping† WDFN6 (Pb−Free) 3000 / Tape & Reel With Active Output Discharge Without Active Output Discharge †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511BR ISSUE B ÉÉ ÉÉ ÇÇ SCALE 4:1 D A B A1 0.10 C 0.10 C ALTERNATE B−1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. FOR DEVICES CONTAINING WETTABLE FLANK OPTION, DETAIL A ALTERNATE CONSTRUCTION A-2 AND DETAIL B ALTERNATE CONSTRUCTION B-2 ARE NOT APPLICABLE. MOLD CMPD ALTERNATE B−2 ALTERNATE CONSTRUCTIONS E L L DIM A A1 A3 b D D2 E E2 e L L1 L1 TOP VIEW ALTERNATE A−1 ALTERNATE A−2 DETAIL A A3 DETAIL B 0.05 C ÉÉ ÉÉ ÇÇ EXPOSED Cu DETAIL B ÍÍÍ ÍÍÍ ÍÍÍ PIN ONE REFERENCE A3 DATE 19 JAN 2016 ALTERNATE CONSTRUCTIONS A 6X 0.05 C A1 NOTE 4 C SIDE VIEW D2 DETAIL A 1 3 SEATING PLANE GENERIC MARKING DIAGRAM* 1 L XX M XX = Specific Device Code M = Date Code E2 6 4 6X *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. b e BOTTOM VIEW MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 1.50 1.70 2.00 BSC 0.90 1.10 0.65 BSC 0.20 0.40 --0.15 0.10 M C A 0.05 M C B RECOMMENDED MOUNTING FOOTPRINT NOTE 3 1.72 6X 0.45 1.12 PACKAGE OUTLINE 6X 0.40 2.30 1 0.65 PITCH DIMENSIONS: MILLIMETERS DOCUMENT NUMBER: DESCRIPTION: 98AON55829E WDFN6 2X2, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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NCV8718AMT500TBG 价格&库存

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NCV8718AMT500TBG
  •  国内价格 香港价格
  • 1+8.739681+1.12744
  • 10+6.2627110+0.80791
  • 25+5.6448325+0.72820
  • 100+4.96811100+0.64090
  • 250+4.64533250+0.59926
  • 500+4.45051500+0.57413
  • 1000+4.315611000+0.55673

库存:1605

NCV8718AMT500TBG

    库存:0

    NCV8718AMT500TBG
      •  国内价格
      • 1+7.52760
      • 10+7.35480
      • 30+7.23600

      库存:45

      NCV8718AMT500TBG
      •  国内价格 香港价格
      • 3000+3.972733000+0.51250
      • 6000+3.878626000+0.50036

      库存:1605

      NCV8718AMT500TBG

        库存:0