0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
NCV8775CDS50R4G

NCV8775CDS50R4G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO-263-6

  • 描述:

    IC REG LINEAR 5V 350MA D2PAK-5

  • 数据手册
  • 价格&库存
NCV8775CDS50R4G 数据手册
NCV8775C Ultra Low Iq 350 mA LDO Regulator with Reset The NCV8775C is 350 mA LDO regulator with integrated reset functions dedicated for microprocessor applications. Its robustness allows NCV8775C to be used in severe automotive environments. Ultra low quiescent current as low as 19 mA typical makes it suitable for applications permanently connected to battery requiring ultra low quiescent current with or without load. This feature is especially critical when modules remain in active mode when ignition is off. The NCV8775C contains protection functions as current limit, thermal shutdown. www.onsemi.com MARKING DIAGRAMS Features • • • • • • • • • • • Output Voltage Options: 3.3 V and 5 V Output Voltage Accuracy: ±2% Output Current up to 350 mA Ultra Low Quiescent Current: typ 19 mA (max 28 mA) Very Wide Range of Cout and ESR Values for Stability Microprocessor Compatible Control Functions: − Reset with Adjustable Delay Wide Input Voltage Operation Range: up to 40 V Protection Features − Current Limitation − Thermal Shutdown NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Grade 1 Qualified and PPAP Capable EMC Compliant These are Pb−Free Devices xx A WL, L Y WW G or G DPAK−5 DT SUFFIX CASE 175AA 775CxxG ALYWW D2PAK−5 D5S SUFFIX CASE 936A NC V8775Cxx AWLYWWG = 50 (5.0 V Version) = 33 (3.3 V Version) = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package Typical Applications • • • • Body Control Module Instruments and Clusters Occupant Protection and Comfort Powertrain VBAT Cin 0.1 mF CD 47 nF Vin Vout NCV8775C D ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. Vout VDD Cout 10 mF RO RRO 5 kW Microprocessor RESET GND Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2017 December, 2019 − Rev. 1 1 Publication Order Number: NCV8775C/D NCV8775C Vout Vin Thermal Shutdown RO Driver With Current Limit Error Amplifier Reset Driver Reset Comparator Reference Delay Timer GND Figure 2. Simplified Block Diagram PIN CONNECTIONS PIN Tab, 1. Vin 2. RO 3. GND 4. D 5. Vout PIN Tab, 1 1 D2PAK−5 DPAK−5 Figure 3. Pin Connections PIN FUNCTION DESCRIPTION Pin No. DPAK−5 D2PAK−5 Pin Name 1 Vin Positive Power Supply Input. Connect 0.1 mF capacitor to ground. 2 RO Reset (Open Collector) Output. External Pull−up resistor connected to Vout. 3, TAB GND 4 D 5 Vout Description Power Supply Ground. Pin 3 internally connected to tab. Reset Delay. Timing capacitor to GND for Reset Delay function. Regulated Output Voltage. Connect 10 mF capacitor with ESR < 5 W to ground. www.onsemi.com 2 1. Vin 2. RO 3. GND 4. D 5. Vout D NCV8775C ABSOLUTE MAXIMUM RATINGS Symbol Min Max Unit Input Voltage (Note 1) Rating DC Vin −0.3 40 V Input Voltage (Note 2) Load Dump − Suppressed Us * − 45 V Output Voltage Vout −0.3 7 V Reset Delay Voltage VD −0.3 7 V Reset Output Voltage VRO −0.3 7 V Junction Temperature TJ −40 150 °C Storage Temperature TSTG −55 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. Load Dump Test B (with centralized load dump suppression) according to ISO16750−2 standard. Guaranteed by design. Not tested in production. Passed Class A according to ISO16750−1. ESD CAPABILITY (Note 3) Rating Symbol Min Max Unit ESD Capability, Human Body Model ESDHBM −4 4 kV ESD Capability, Charged Device Model ESDCDM −1 1 kV 3. This device series incorporates ESD protection and is tested by the following methods: ESD HBM tested per AEC−Q100−002 (JS−001−2017) Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes 2 x 2 mm due to the inability of a small package body to acquire and retain enough charge to meet the minimum CDM discharge current waveform characteristic defined in JEDEC JS−002−2018. LEAD SOLDERING TEMPERATURE AND MSL (Note 4) Rating Moisture Sensitivity Level Symbol DPAK−5 D2PAK−5 Min MSL Max 1 1 Unit − 4. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. THERMAL CHARACTERISTICS (Note 5) Rating Symbol Value Thermal Characteristics, DPAK−5 Thermal Resistance, Junction−to−Air (Note 6) Thermal Reference, Junction−to−Lead (Note 6) Thermal Resistance, Junction−to−Air (Note 7) Thermal Reference, Junction−to−Lead (Note 7) RθJA RψJL1 RθJA RψJL1 53.5 8.2 23.9 7.4 Thermal Characteristics, D2PAK−5 Thermal Resistance, Junction−to−Air (Note 6) Thermal Reference, Junction−to−Lead (Note 6) Thermal Resistance, Junction−to−Air (Note 7) Thermal Reference, Junction−to−Lead (Note 7) RθJA RψJL1 RθJA RψJL1 53.3 7.6 23.7 6.9 Unit °C/W °C/W 5. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 6. Values based on 1s0p board with copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate. Single layer − according to JEDEC51.3. 7. Values based on 2s2p board with copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness for inner layers, 2 oz copper thickness for signal layers and FR4 PCB substrate. 4 layers − according to JEDEC51.7. RECOMMENDED OPERATING RANGE (Note 8) Rating Symbol Min Max Unit Input Voltage (Note 9) Vin 4.5 40 V Junction Temperature TJ −40 150 °C 8. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 9. Minimum Vin = 4.5 V or (Vout + VDO), whichever is higher. www.onsemi.com 3 NCV8775C ELECTRICAL CHARACTERISTICS Vin = 13.5 V, Cin = 0.1 mF, Cout = 10 mF, Min and Max values are valid for temperature range −40°C ≤ TJ ≤ 150°C unless noted otherwise and are guaranteed by test, design or statistical correlation. Typical values are referenced to TJ = 25°C (Notes 10 and 11) Parameter Test Conditions Symbol Min Typ Max Unit 3.234 3.234 4.9 4.9 3.3 3.3 5.0 5.0 3.366 3.366 5.1 5.1 Regline −20 0 20 mV Regload −35 10 35 mV − − 200 350 350 600 − − 19 − 27 28 REGULATOR OUTPUT Output Voltage (Accuracy %) Vout 3.3 V Vin = 4.5 V to 40 V, Iout = 0.1 mA to 200 mA Vin = 4.5 V to 16 V, Iout = 0.1 mA to 350 mA 5.0 V Vin = 5.6 V to 40 V, Iout = 0.1 mA to 200 mA Vin = 5.975 V to 16 V, Iout = 0.1 mA to 350 mA Line Regulation V 3.3 V Vin = 4.5 V to 28 V, Iout = 5 mA 5.0 V Vin = 6 V to 28 V, Iout = 5 mA Load Regulation Iout = 0.1 mA to 350 mA Dropout Voltage (Note 12) VDO 5.0 V Iout = 200 mA Iout = 350 mA mV QUIESCENT CURRENT Quiescent Current (Iq = Iin − Iout) mA Iq Iout = 0.1 mA, TJ = 25°C Iout = 0.1 mA, TJ ≤ 125°C CURRENT LIMIT PROTECTION Current Limit Vout = 0.96 x Vout_nom ILIM 500 − 1100 mA Short Circuit Current Limit Vout = 0 V ISC 500 − 1100 mA PSRR − 80 − dB ID 2.0 4.0 6.5 mA VDU 1.2 1.3 1.4 V tRD 10 16 22 ms PSRR Power Supply Ripple Rejection (Note 13) f = 100 Hz, 0.5 Vpp D (RESET DELAY) Reset Charging Current VD = 1.0 V Upper Timing Threshold Reset Delay Time CD = 47 nF Reset Reaction Time tRR ms 6.0 RESET OUTPUT RO Input Voltage Reset Threshold Vin decreasing, Vout > VRT Vin_RT 3.3 V V − 3.8 4.2 VRT 90 93 96 %Vout VRH − 2.0 − %Vout VROL − 0.2 0.4 V IROLK − − 5 mA Thermal Shutdown Temperature (Note 13) TSD 150 175 195 °C Thermal Shutdown Hysteresis (Note 13) TSH − 10 − °C Output Voltage Reset Threshold Vout decreasing Reset Hysteresis Reset Output Low Voltage Vout > 1 V, RRO > 5 kW Reset High Level Leakage Current THERMAL SHUTDOWN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 10. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TA [ TJ. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 12. Measured when output voltage falls 100 mV below the regulated voltage at Vin = 13.5 V. 13. Values based on design and/or characterization. www.onsemi.com 4 NCV8775C TYPICAL CHARACTERISTICS 30 Vin = 13.5 V Iout = 100 mA Vout(nom) = 5.0 V 28 26 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 30 24 22 20 18 16 14 12 0 20 40 60 80 26 24 22 20 18 16 14 12 10 −40 −20 10 −40 −20 Vin = 13.5 V Iout = 100 mA Vout(nom) = 3.3 V 28 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Quiescent Current vs. Junction Temperature Figure 5. Quiescent Current vs. Junction Temperature 800 800 Iq, QUIESCENT CURRENT (mA) 600 Iq, QUIESCENT CURRENT (mA) Iout = 100 mA TJ = 25°C Vout(nom) = 5.0 V 700 500 400 300 200 100 0 Iout = 100 mA TJ = 25°C Vout(nom) = 3.3 V 700 600 500 400 300 200 100 0 0 4 8 12 16 20 24 28 32 36 40 0 4 8 Vin, INPUT VOLTAGE (V) 20 24 28 32 36 40 Iq, QUIESCENT CURRENT (mA) 1200 Vin = 13.5 V Vout(nom) = 5.0 V TJ = −40°C TJ = 25°C 800 TJ = 150°C 600 400 200 0 0 16 Figure 7. Quiescent Current vs. Input Voltage 1200 1000 12 Vin, INPUT VOLTAGE (V) Figure 6. Quiescent Current vs. Input Voltage Iq, QUIESCENT CURRENT (mA) 0 Vin = 13.5 V Vout(nom) = 3.3 V 1000 TJ = −40°C TJ = 25°C 800 600 TJ = 150°C 400 200 0 50 100 150 200 250 300 IOUT, OUTPUT CURRENT (mA) 0 350 Figure 8. Quiescent Current vs. Output Current 50 100 150 200 250 Iout, OUTPUT CURRENT (mA) 300 350 Figure 9. Quiescent Current vs. Output Current www.onsemi.com 5 NCV8775C TYPICAL CHARACTERISTICS 3.38 5.10 Vin = 13.5 V Iout = 100 mA Vout(nom) = 5.0 V 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 −40 −20 0 20 Vin = 13.5 V Iout = 100 mA Vout(nom) = 3.3 V 3.36 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 5.08 40 60 80 3.34 3.32 3.30 3.28 3.26 3.24 3.22 −40 −20 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 10. Output Voltage vs. Junction Temperature Figure 11. Output Voltage vs. Junction Temperature 4 Iout = 100 mA Vout(nom) = 5.0 V 5 Vout, OUTPUT VOLTAGE (V) Vout, OUTPUT VOLTAGE (V) 6 4 3 TJ = 25°C 2 TJ = −40°C 1 TJ = 150°C Iout = 100 mA Vout(nom) = 3.3 V 3.5 3 2.5 2 TJ = 25°C 1.5 TJ = −40°C 1 TJ = 150°C 0.5 0 0 0 1 2 3 4 5 6 Vin, INPUT VOLTAGE (V) 7 0 8 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (V) Figure 12. Output Voltage vs. Input Voltage Figure 13. Output Voltage vs. Input Voltage 700 700 Vin = 13.5 V Vout(nom) = 5.0 V 600 VDO, DROPOUT VOLTAGE (mV) VDO, DROPOUT VOLTAGE (mV) 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) 500 400 TJ = 25°C 300 TJ = 150°C 200 TJ = −40°C 100 0 0 50 100 150 200 250 Iout, OUTPUT CURRENT (mA) 300 600 Vin = 13.5 V Vout(nom) = 5.0 V 500 Iout = 350 mA 400 300 Iout = 200 mA 200 100 0 −40 −20 350 Figure 14. Dropout Voltage vs. Output Current 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Dropout Voltage vs. Junction Temperature www.onsemi.com 6 160 NCV8775C TYPICAL CHARACTERISTICS ILIM ISC, CURRENT LIMIT (mA) ILIM ISC, CURRENT LIMIT (mA) 1000 ISC @ Vout = 0 V 800 600 ILIM @ Vout = 4.8 V 400 200 TJ = 25°C Vout(nom) = 5.0 V 0 0 5 10 15 20 25 30 35 600 400 200 TJ = 25°C Vout(nom) = 3.3 V 5 10 15 20 25 30 35 Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 17. Output Current Limit vs. Input Voltage 40 1100 Vin = 13.5 V Vout(nom) = 5.0 V ILIM ISC, CURRENT LIMIT (mA) ILIM ISC, CURRENT LIMIT (mA) ILIM @ Vout = 3.168 V Figure 16. Output Current Limit vs. Input Voltage 900 800 ISC @ Vout = 0 V 700 ILIM @ Vout = 4.8 V 600 500 400 −40 −20 Vin = 13.5 V Vout(nom) = 3.3 V 1000 900 ISC @ Vout = 0 V 800 ILIM @ Vout = 3.168 V 700 600 500 400 0 20 40 60 80 −40 −20 100 120 140 160 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 18. Output Current Limit vs. Junction Temperature Figure 19. Output Current Limit vs. Junction Temperature 100 100 Unstable Region 10 Unstable Region 10 Stable Region ESR (W) ESR (W) ISC @ Vout = 0 V 800 0 0 40 1100 1000 1000 1 0.1 0.1 Vin = 13.5 V Vout(nom) = 5.0 V Cout = 1.0 mF − 100 mF 0.01 0 50 100 150 200 250 300 Stable Region 1 Vin = 13.5 V Vout(nom) = 3.3 V Cout = 1.0 mF − 100 mF 0.01 0 350 50 100 150 200 250 300 Iout, OUTPUT CURRENT (mA) Iout, OUTPUT CURRENT (mA) Figure 20. Output Stability with Output Capacitor ESR Figure 21. Output Stability with Output Capacitor ESR www.onsemi.com 7 350 NCV8775C TYPICAL CHARACTERISTICS Vin = 13.5 V Vout(nom) = 5.0 V 4.75 4.7 4.65 4.6 4.55 3.17 VRT, RESET THRESHOLD (V) VRT, RESET THRESHOLD (V) 4.8 4.5 Vin = 13.5 V Vout(nom) = 3.3 V 3.13 3.09 3.05 3.01 2.97 −40 −20 −40 −20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 22. Reset Threshold vs. Junction Temperature Figure 23. Reset Threshold vs. Junction Temperature Vin_RT, INPUT VOLTAGE RESET THRESHOLD (V) 4.2 Vin = 13.5 V Vout(nom) = 3.3 V 4.1 4.0 3.9 3.8 3.7 3.6 3.5 3.4 −40 −20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) Figure 24. Input Voltage Reset Threshold vs. Junction Temperature 22 Vin = 13.5 V CD = 47 nF Vout(nom) = 5.0 V 20 tRD, RESET DELAY TIME (ms) tRD, RESET DELAY TIME (ms) 22 18 16 14 12 10 −40 −20 0 20 40 60 80 Vin = 13.5 V CD = 47 nF Vout(nom) = 3.3 V 20 18 16 14 12 10 −40 −20 100 120 140 160 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 25. Reset Delay Time vs. Junction Temperature Figure 26. Reset Delay Time vs. Junction Temperature www.onsemi.com 8 NCV8775C TYPICAL CHARACTERISTICS 120 Iout = 100 mA 80 PSRR (dB) NOISE DENSITY (nV/√Hz) 100 60 40 Iout = 100 mA 20 0 Vin = 13.5 V ± 0.5 VPP Cout = 1 mF Vout(nom) = 5.0 V 10 100 1000 10000 100000 f, FREQUENCY (Hz) 1000000 6000 5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 f = 10 Hz − 100 kHz Vn = 268 mV Vin = 13.5 V Cout = 1 mF Iout = 100 mA Vout(nom) = 5.0 V 10 Figure 27. PSRR vs. Frequency 28 V Vin (10 V/div) 1000 10000 f, FREQUENCY (Hz) 350 mA Iout (200 mA/div) TJ = 25°C Vin = 13.5 V Cout = 10 mF trise/fall = 1 ms (Iout) 0.1 mA 5.17 V Vout (200 mV/div) 5.012 V Vout (20 mV/div) 4.995 V TIME (400 ms/div) TIME (100 ms/div) Figure 29. Line Transients Vin (5 V/div) 13.5 V Figure 30. Load Transients TJ = 25°C Iout = 100 mA Cout = 10 mF CD = 47 nF trise/fall = 1 s (Vin) 0V Vout (5 V/div) VRO (5 V/div) 5V 4.78 V 5V 100000 Figure 28. Noise vs. Frequency TJ = 25°C Iout = 100 mA Cout = 10 mF trise/fall = 1 ms (Vin) 6V 100 0V 0V TIME (400 ms/div) Figure 31. Power Up/Down Response www.onsemi.com 9 NCV8775C V in t V out < t RR > t RR V RT + V RH V RT t V RO tRR tRR V ROL VD t tRD tRD VDU Figure 32. Reset Function and Timing Diagram t DEFINITIONS General Current Limit and Short Circuit Current Limit All measurements are performed using short pulse low duty cycle techniques to maintain junction temperature as close as possible to ambient temperature. Current Limit is value of output current by which output voltage drops below 96% of its nominal value. Short Circuit Current Limit is output current value measured with output of the regulator shorted to ground. Output voltage The output voltage parameter is defined for specific temperature, input voltage and output current values or specified over Line, Load and Temperature ranges. PSRR Power Supply Rejection Ratio is defined as ratio of output voltage and input voltage ripple. It is measured in decibels (dB). Line Regulation The change in output voltage for a change in input voltage measured for specific output current over operating ambient temperature range. Line Transient Response Typical output voltage overshoot and undershoot response when the input voltage is excited with a given slope. Load Regulation The change in output voltage for a change in output current measured for specific input voltage over operating ambient temperature range. Load Transient Response Typical output voltage overshoot and undershoot response when the output current is excited with a given slope between low−load and high−load conditions. Dropout Voltage The input to output differential at which the regulator output no longer maintains regulation against further reductions in input voltage. It is measured when the output drops 100 mV below its nominal value. The junction temperature, load current, and minimum input supply requirements affect the dropout level. Thermal Protection Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When activated at typically 175°C, the regulator turns off. This feature is provided to prevent failures from accidental overheating. Quiescent Current Maximum Package Power Dissipation Quiescent Current (Iq) is the difference between the input current (measured through the LDO input pin) and the output load current. The power dissipation level is maximum allowed power dissipation for particular package or power dissipation at which the junction temperature reaches its maximum operating value, whichever is lower. www.onsemi.com 10 NCV8775C APPLICATIONS INFORMATION The NCV8775C regulator is self−protected with internal thermal shutdown and internal current limit. Typical characteristics are shown in Figure 4 to Figure 34. V DU t RD + C D ID t RD + 47 nF Input Decoupling (Cin) A ceramic or tantalum 0.1 mF capacitor is recommended and should be connected close to the NCV8775C package. Higher capacitance and lower ESR will improve the overall line and load transient response. Input Capacitor is required if regulator is located far from power supply filter. If extremely fast input voltage transients are expected with slew rate in excess of 4 V/ms then appropriate input filter must be used. The filter can be composed of several capacitors in parallel. (eq. 1) 1.3 V 4 mA + 15.3 ms Other time delays can be obtained by changing the CD capacitor value. The Delay Time can be reduced by decreasing the capacitance of CD. Using the formula above, Delay can be reduced as desired. For minimum reset delay time Delay pin must be left open with no PCB trace connected to the pin. Thermal Considerations As power in the NCV8775C increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the NCV8775C has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the NCV8775C can handle is given by: Output Decoupling (Cout) The NCV8775C is a stable component and does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. Stability region of ESR vs Output Current is shown in Figures 20 and 21. The minimum output decoupling value is 1 mF and can be augmented to fulfill stringent load transient requirements. The regulator works with ceramic chip capacitors as well as tantalum devices. Larger values improve noise rejection and load regulation transient response. P D(max) + Reset Operation A reset signal is provided on the Reset Output (RO) pin to provide feedback to the microprocessor of an out of regulation condition. The timing diagram of reset function is shown in Figure 32. This is in the form of a logic signal on RO. Output voltage conditions below the Reset threshold cause RO to go low. RO is pulled up to Vout by an external resistor, typically 5.0 kW in value. Output voltage regulation must be maintained for the delay time before the reset output signals a valid condition. The delay for the reset output is defined as the amount of time it takes the timing capacitor on the delay pin to charge from a residual voltage of 0 V to the upper timing threshold voltage VDU of 1.3 V. The charging current for this is ID of 4 mA and D pin voltage in steady state is typically 0 V. By using typical IC parameters with a 47 nF capacitor on the D Pin, the following time delay is derived: ƪTJ(max) * TAƫ (eq. 2) R qJA Since TJ is not recommended to exceed 150°C, then the NCV8775C soldered on 645 mm2, 1 oz copper area, FR4 can dissipate up to 2.35 W (for D2PAK−5) when the ambient temperature (TA) is 25°C. See Figures 33 and 34 for RqJA versus PCB area. The power dissipated by the NCV8775C can be calculated from the following equations: P D + V inǒI q@I outǓ ) I outǒV in * V outǓ (eq. 3) or V in(max) + NOTE: www.onsemi.com 11 P D(max) ) ǒV out I outǓ I out ) I q Items containing Iq can be neglected if Iout >> Iq. (eq. 4) NCV8775C 100 RqJA, THERMAL RESISTANCE (°C/W) 110 100 RqJA, THERMAL RESISTANCE (°C/W) 110 90 80 70 1 oz, Single Layer 60 50 2 oz, Single Layer 40 30 20 1 oz, 4 Layer 10 0 90 80 70 1 oz, Single Layer 60 50 2 oz, Single Layer 40 30 20 1 oz, 4 Layer 10 0 0 200 400 600 800 1000 COPPER HEAT SPREADER AREA (mm2) 200 400 600 800 COPPER HEAT SPREADER AREA (mm2) Figure 33. Thermal Resistance vs. PCB Copper Area (DPAK−5) Figure 34. Thermal Resistance vs. PCB Copper Area (D2PAK−5) Hints 0 1000 The NCV8775C is not developed in compliance with ISO26262 standard. If application is safety critical then the above application example diagram shown in Figure 35 can be used. Vin and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external filter components, especially the output capacitor, as near as possible to the device to increase EMC performance. Vout VBAT Vin Vout VDD Cout Cin VCC RESET Voltage Supervisor NCV8775C I/O Microprocessor (e.g. NCV30X, NCV809) GND D CD I/O RO GND Figure 35. NCV8775C Application Diagram ORDERING INFORMATION Output Voltage Package Shipping† NCV8775CDT33RKG 3.3 V DPAK−5 (Pb−Free) 2500 / Tape & Reel NCV8775CDT50RKG 5.0 V DPAK−5 (Pb−Free) 2500 / Tape & Reel NCV8775CDS33R4G 3.3 V D2PAK−5 (Pb−Free) 800 / Tape & Reel NCV8775CDS50R4G 5.0 V D2PAK−5 (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−5, CENTER LEAD CROP CASE 175AA ISSUE B DATE 15 MAY 2014 SCALE 1:1 −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R R1 Z A S 12 3 4 5 U K F J L H D G 5 PL 0.13 (0.005) M T 2.2 0.086 0.34 5.36 0.013 0.217 5.8 0.228 10.6 0.417 0.8 0.031 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12855D INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.020 0.028 0.018 0.023 0.024 0.032 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.045 BSC 0.170 0.190 0.185 0.210 0.025 0.040 0.020 −−− 0.035 0.050 0.155 0.170 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.51 0.71 0.46 0.58 0.61 0.81 4.56 BSC 0.87 1.01 0.46 0.58 2.60 2.89 1.14 BSC 4.32 4.83 4.70 5.33 0.63 1.01 0.51 −−− 0.89 1.27 3.93 4.32 GENERIC MARKING DIAGRAMS* RECOMMENDED SOLDERING FOOTPRINT* 6.4 0.252 DIM A B C D E F G H J K L R R1 S U V Z XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete XXXXXX A L Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DPAK−5 CENTER LEAD CROP PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 5−LEAD CASE 936A−02 ISSUE E DATE 28 JUL 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxx A WL Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASH01006A D2PAK 5−LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales
NCV8775CDS50R4G 价格&库存

很抱歉,暂时无法提供与“NCV8775CDS50R4G”相匹配的价格&库存,您可以联系我们找货

免费人工找货