NCV952DTBR2G

NCV952 Operational Amplifier, Low Power, Rail-to-Rail The NCV952 is a dual, low power, operational amplifier fully specified for 3 V, 5 V and 24 V operation. Rail−to−rail output performance over the supply range of 2.7 V to 26 V provides increased dynamic range in single−supply and split−supply applications. This device offers a gain−bandwidth of 3.5 MHz and a slew rate of 1 V/ms, with only 0.7 mA of quiescent current. The NCV952 is available in a space saving 8−pin TSSOP8 package. www.onsemi.com Features • • • • • • • • Rail−to−rail Input Common Mode Voltage Range Rail−to−rail Output Swing Wide Supply Range: 2.7 V to 26 V Excellent Gain−bandwidth and Speed: 3.5 MHz at 1 V/ms with 3 V Supply Low Quiescent Current: 0.7 mA at VS = 3 V per Channel PSRR: 105 dB Typical NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−free, Halogen Free/BFR Free and are RoHS Compliant TSSOP−8 CASE 948S MARKING DIAGRAM V52 YWW AG G V52 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package Typical Applications • • • • • • • • • • PIN CONNECTIONS General Purpose Operational Amplifier Active Filters Signal Conditioning Amplifiers/ADC Buffers Set−top Boxes Laptop/Notebook Computers Transformer/Line Drivers Personal Entertainment Systems Cell Phones and Other Portable Communications Portable Headphone Speaker Drivers Instrumentation and Sensoring OUT1 1 8 VDD IN−1 2 7 OUT2 IN+1 3 6 IN−2 VSS 4 5 IN+2 ORDERING INFORMATION Device Package Shipping† NCV952DTBR2G TSSOP−8 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 July, 2015 − Rev. 3 1 Publication Order Number: NCV952/D NCV952 Table 1. PIN DESCRIPTION Pin Name Type Description 1 OUT1 Output 2 IN−1 Input Inverting input of opamp 1 3 IN+1 Input Non−inverting input of opamp 1 4 VSS Power 5 IN+2 Input Non−inverting input of opamp 2 6 IN−2 Input Inverting input of opamp 2 7 OUT2 Output Output of opamp 2 8 VDD Power Positive supply. A bypass capacitor of 0.1 mF to ground is recommended as close as possible to this pin. Output of opamp 1 Negative supply. A bypass capacitor of 0.1 mF to ground is recommended as close as possible to this pin. Table 2. ABSOLUTE MAXIMUM RATINGS (Over operating free−air temperature, unless otherwise stated) Parameter Symbol Limit Unit VS 28 V Input Voltage VIN VSS – 0.3 to VDD + 0.3 V Differential Input Voltage (Note 1) VID ±1 V Storage Temperature TSTG −65 to +150 °C Junction Temperature TJ +150 °C Human Body Model HBM 2500 V Machine Model MM 300 V Supply Voltage (VDD− VSS) INPUT AND OUTPUT PINS TEMPERATURE ESD RATINGS (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Input differential voltage is the non−inverting pin with respect to the inverting pin. If VID > ±1 V, the maximum input current must not exceed ±1 mA; an input series resistor must be used to limit the input current. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115) Table 3. THERMAL INFORMATION (Note 3) Parameter Symbol Value Unit Junction to Ambient (Note 4) qJA 140 °C/W Junction to Case Top (Note 4) yJT 34 °C/W 3. Short−circuits can cause excessive heating and destructive dissipation. Values are typical. 4. Multilayer board, 1 oz. copper, 400 mm2 copper area, both junctions heated equally. Table 4. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Limit Unit Operating Supply Voltage VS 2.7 to 26 V Specified Operating Range TA −40 to +125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCV952 Table 5. ELECTRICAL CHARACTERISTICS AT VS = 3.0 V At TA = +25°C, RL = 10 kW connected to mid−supply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design. Parameter Symbol Conditions Min Typ Max Unit VOS 0.6 6.0 mV Offset Voltage Drift DV/DT 2.0 Input Bias Current IIB 55 INPUT CHARACTERISTICS Offset Voltage 8.0 Input Offset Current Input Common Mode Range Common Mode Rejection Ratio IOS 1.0 VCM VSS – 0.2 mV mV/°C 100 nA 200 nA 30 nA 80 nA VDD + 0.2 V CMRR VSS + 0.15 < VCM < VDD − 0.15 50 80 dB Output Voltage High VOH RL = 600 W VDD − 0.2 VDD − 0.08 V Output Voltage Low VOL RL = 600 W Short Circuit Current ISC OUTPUT CHARACTERISTICS VSS + 0.10 VSS + 0.25 10 V mA NOISE PERFORMANCE eN f = 1 kHz, no load 25 nV/√Hz Open Loop Voltage Gain AVOL VO = 2 Vpp, RL = 600 W 88 dB Gain Bandwidth Product GBWP RL = 2 kW 3.5 MHz Gain Margin AM RL = 600 W, CL = 100 pF 8 dB Phase Margin yM RL = 600 W, CL = 100 pF 56 ° Slew Rate SR RL = 10 kW 1.0 V/mS THD+N VOUT = 2 Vpp, fIN = 10 kHz, AV = 2, RL = 10 kW 0.008 % PSRR VS = 2.7 V to 26 V 105 dB IDD No load, VCM = VS/2, per channel Voltage Noise Density DYNAMIC PERFORMANCE Total Harmonic Distortion + Noise POWER SUPPLY Power Supply Rejection Ratio Quiescent Current 60 0.7 1.3 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NCV952 Table 6. ELECTRICAL CHARACTERISTICS AT VS = 5.0 V At TA = +25°C, RL = 10 kW connected to mid−supply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design. Parameter Symbol Conditions Min Typ Max Unit VOS 0.6 6.0 mV Offset Voltage Drift DV/DT 2.0 Input Bias Current IIB 55 INPUT CHARACTERISTICS Offset Voltage 8.0 Input Offset Current Input Common Mode Range Common Mode Rejection Ratio IOS 1.0 VCM CMRR VSS – 0.2 VSS + 0.15 < VCM < VDD − 0.15 mV mV/°C 100 nA 200 nA 30 nA 80 nA VDD+0.2 V 50 85 dB VDD−0.30 VDD−0.10 V OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 600 W Output Voltage Low VOL RL = 600 W Short Circuit Current ISC VSS+0.14 VSS+0.30 10 V mA NOISE PERFORMANCE eN f = 1 kHz, no load 25 nV/√Hz Open Loop Voltage Gain AVOL VO = 2 Vpp, RL = 600 W 88 dB Gain Bandwidth Product GBWP RL = 2 kW 3.6 MHz Gain Margin AM RL = 600 W, CL = 100 pF 9 dB Phase Margin yM RL = 600 W, CL = 100 pF 60 ° Slew Rate SR RL = 10 kW 1.0 V/mS THD+N VOUT = 4 Vpp, fIN = 10 kHz, AV = 2, RL = 10 kW 0.008 % PSRR VS = 2.7 V to 26 V 105 dB ICC No load, VCM = VS/2, per channel Voltage Noise Density DYNAMIC PERFORMANCE Total Harmonic Distortion + Noise POWER SUPPLY Power Supply Rejection Ratio Quiescent Current 60 0.75 1.4 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NCV952 Table 7. ELECTRICAL CHARACTERISTICS AT VS = 24 V At TA = +25°C, RL = 10 kW connected to mid−supply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, TA = –40°C to +125°C, guaranteed by characterization and/or design. Parameter Symbol Conditions Min Typ Max Unit VOS 0.6 6.0 mV Offset Voltage Drift DV/DT 4.5 Input Bias Current IIB 55 INPUT CHARACTERISTICS Offset Voltage 8.0 Input Offset Current Input Common Mode Range Common Mode Rejection Ratio IOS 1.0 VCM CMRR VSS – 0.2 VSS + 0.15 < VCM < VDD − 0.15 mV mV/°C 100 nA 200 nA 30 nA 80 nA VDD+0.2 V 50 100 dB VDD−0.30 VDD−0.10 V OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 2 kW Output Voltage Low VOL RL = 2 kW Short Circuit Current ISC VSS+0.14 VSS+0.30 10 V mA NOISE PERFORMANCE eN f = 1 kHz, no load 25 nV/√Hz Open Loop Voltage Gain AVOL VO = 2 Vpp, RL = 2 kW 88 dB Gain Bandwidth Product GBWP RL = 10 kW 3.0 MHz Gain Margin AM RL = 10 kW, CL = 100 pF 9.0 dB Phase Margin yM RL = 10 kW, CL = 100 pF 70 ° Slew Rate SR RL = 10 kW 1.0 V/mS THD+N VOUT = 10 Vpp, fIN = 10 kHz, AV = 2, RL = 10 kW 0.013 % PSRR VS = 2.7 V to 26 V 105 dB ICC No load, VCM = VS/2, per channel Voltage Noise Density DYNAMIC PERFORMANCE Total Harmonic Distortion + Noise POWER SUPPLY Power Supply Rejection Ratio Quiescent Current 60 0.95 1.4 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 5 NCV952 TYPICAL CHARACTERISTICS 2.0 100 100 80 25°C 1.5 1.25 80 VS = 3 V CL = 100 pF 60 125°C 1.0 40 40 20 0.75 −20 2 4 6 10 8 12 14 18 16 22 20 1k 24 10k Figure 1. Supply Current vs. Supply Voltage 10 VS = 3 V RL = 10 kW 1.6 SR+ 1.2 SR− 1.0 VS = 3 V f = 1 kHz AV = −1 TA = 25°C 1 1.4 THD+N (%) SLEW RATE (V/ms) −20 10M 1M Figure 2. Open Loop Gain and Phase Margin vs. Frequency 2.0 0.8 0.1 0.6 0.2 0 −50 RL = 2 kW 0.001 −25 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0 TEMPERATURE (°C) OUTPUT VOLTAGE (RMS) Figure 3. Slew Rate vs. Temperature Figure 4. THD+N vs. Output Voltage 1 1000 VOLTAGE NOISE (nV/√Hz) VS = 3 V VOUT = 2 VPP AV = −1 TA = 25°C 0.1 RL = 600 W 0.01 0.001 10 RL = 600 W 0.01 0.4 THD+N (%) 100k 0 FREQUENCY (Hz) SUPPLY VOLTAGE (V) 1.8 20 Gain, RL = 600 W Gain, RL = 2 kW Phase Margin, RL = 600 W Phase Margin, RL = 2 kW 0 0.5 60 PHASE MARGIN (°) 1.75 AVOL (dB) SUPPLY CURRENT (mA) −40°C RL = 2 kW VS = 5 V RL = Open AV = 10.2 TA = 25°C 100 10 100 1k 10k 100k 1 10 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 5. THD+N vs. Frequency Figure 6. Input Voltage Noise vs. Frequency www.onsemi.com 6 NCV952 TYPICAL CHARACTERISTICS 0 VS = 5 V RL = 600 W AV = 1 Input = 200 mVpp TA = 25°C −20 −40 COMMON MODE REJECTION (dB) POWER SUPPLY REJECTION (dB) 0 VDD −60 VSS −80 −100 −120 10 100 1k 10k VS = 5 V RL = 600 W Input = 500 mVpp TA = 25°C −20 −40 −60 −80 −100 −120 10 100k 100 FREQUENCY (Hz) OUTPUT VOLTAGE (V) HIGH LEVEL OUTPUT VOLTAGE (V) VS = ±1.5 V VID = −1 V −0.4 T = 125°C −0.6 −0.8 T = 25°C −1.2 T = −40°C −1.4 −1.6 0 5 10 1.0 0.8 T = 25°C 0.6 VS = ±1.5 V VID = +1 V 0.4 0.2 T = 125°C 0 0 5 10 15 Figure 9. Low Level Output Voltage vs. Output Current at 3 V Supply Figure 10. High level Output Voltage vs. Output Current at 3 V Supply HIGH LEVEL OUTPUT VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) T = −40°C 1.2 15 T = 125°C −1.0 −1.5 T = 25°C −2.0 T = −40°C −2.5 −3.0 0 1.4 HIGH LEVEL OUTPUT CURRENT (mA) VS = ±2.5 V VID = −1 V 5 1M 1.6 LOW LEVEL OUTPUT CURRENT (mA) 0 −0.5 100k Figure 8. CMRR vs. Frequency 0 −1.0 10k FREQUENCY (Hz) Figure 7. PSRR vs. Frequency −0.2 1k 10 15 3.0 2.5 T = −40°C 2.0 T = 25°C 1.5 1.0 VS = ±2.5 V VID = +1 V 0.5 T = 125°C 0 0 5 10 LOW LEVEL OUTPUT CURRENT (mA) HIGH LEVEL OUTPUT CURRENT (mA) Figure 11. Low Level Output Voltage vs. Output Current at 5 V Supply Figure 12. High Level Output Voltage vs. Output Current at 5 V Supply www.onsemi.com 7 15 NCV952 TYPICAL CHARACTERISTICS 13 HIGH LEVEL OUTPUT VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) −6 VS = ±12 V VID = −1 V −7 −8 −9 T = 125°C −10 −11 T = 25°C −12 T = −40°C −13 12 11 10 9 8 7 VS = ±12 V VID = −1 V 6 0 5 10 20 15 0 5 10 20 15 LOW LEVEL OUTPUT CURRENT (mA) HIGH LEVEL OUTPUT CURRENT (mA) Figure 13. Low Level Output Voltage vs. Output Current at 24 V Supply Figure 14. High Level Output Voltage vs. Output Current at 24 V Supply 3.0 80 70 2.5 VS = 5 V CURRENT (nA) 60 CURRENT (nA) T = −40°C T = 25°C T = 125°C 50 40 30 VS = 5 V 2.0 1.5 1.0 20 0.5 10 0 −50 −25 0 25 50 75 100 0 −50 125 −25 0 25 50 75 100 TEMPERATURE (°C) TEMPERATURE (°C) Figure 15. Input Bias Current vs. Temperature Figure 16. Input Offset Current vs. Temperature www.onsemi.com 8 125 NCV952 TYPICAL CHARACTERISTICS 0.12 0.10 0.10 Output Input 0.08 0.08 0.06 VOLTAGE (V) VOLTAGE (V) 0.06 0.04 0.02 0 −0.02 VS = 5 V RL = 600 W TA = 25°C −0.04 −0.06 −0.08 −0.10 −4 −2 0 2 4 0.04 0.02 VS = 5 V RL = 600 W TA = 25°C 0 −0.02 −0.04 6 8 10 12 −0.06 −4 −2 14 0 2 4 6 8 10 12 14 16 TIME (ms) TIME (ms) Figure 17. Noninverting Small Signal Transient Response Figure 18. Inverting Small Signal Transient Response 4 5 3 4 3 Input VOLTAGE (V) 2 VOLTAGE (V) Output Input Output 1 0 VS = 5 V RL = 600 W TA = 25°C −1 −2 −3 −4 −2 0 2 4 6 8 18 VS = 5 V RL = 600 W TA = 25°C Output 2 1 0 −1 Input −2 10 12 14 16 −3 −4 −2 18 0 2 4 6 8 10 12 14 16 TIME (ms) TIME (ms) Figure 19. Noninverting Large Signal Transient Response Figure 20. Inverting Large Signal Transient Response www.onsemi.com 9 18 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSSOP−8 CASE 948S−01 ISSUE C DATE 20 JUN 2008 SCALE 2:1 K REF 8x 0.20 (0.008) T U 0.10 (0.004) S 2X L/2 8 0.20 (0.008) T U T U B −U− 1 J J1 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S ÇÇÇÇ ÉÉÉÉ ÉÉÉÉ ÇÇÇÇ ÉÉÉÉ ÇÇÇÇ K1 K A −V− S S 5 L PIN 1 IDENT M SECTION N−N −W− C 0.076 (0.003) D −T− SEATING DETAIL E G PLANE 0.25 (0.010) N M DIM A B C D F G J J1 K K1 L M N F MILLIMETERS MIN MAX 2.90 3.10 4.30 4.50 --1.10 0.05 0.15 0.50 0.70 0.65 BSC 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.114 0.122 0.169 0.177 --0.043 0.002 0.006 0.020 0.028 0.026 BSC 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ GENERIC MARKING DIAGRAM* XXX YWW AG G DETAIL E XXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: STATUS: 98AON00697D ON SEMICONDUCTOR STANDARD NEW STANDARD: © Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 − Rev. 0 TSSOP−8 http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON00697D PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION. 18 APR 2000 A ADDED MARKING DIAGRAM INFORMATION. REQ. BY V. BASS. 13 JAN 2006 B CORRECTED MARKING DIAGRAM PIN 1 LOCATION AND MARKING. REQ. BY C. REBELLO. 13 MAR 2006 C REMOVED EXPOSED PAD VIEW AND DIMENSIONS P AND P1. CORRECTED MARKING INFORMATION. REQ. BY C. REBELLO. 20 JUN 2008 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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