NDB6030PL

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This literature is subject to all applicable copyright laws and is not for resale in any manner. June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed. -30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating. ________________________________________________________________________________ S G D Absolute Maximum Ratings T C = 25°C unless otherwise noted Symbol Parameter NDP6030PL VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage - Continuous ±16 V ID Drain Current - Continuous -30 A - Pulsed -90 PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds TJ,TSTG Operating and Storage Temperature Range NDB6030PL 75 Units W 0.5 -65 to 175 °C 275 °C -65 to 175 °C 2 °C/W 62.5 °C/W THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation NDP6030PL Rev.B1 Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 16 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA o TJ = 125°C ON CHARACTERISTICS -250 µA 1 mA -100 nA (Note) ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = -250 µA, Referenced to 25 o C VGS(th) Gate Threshold Voltage VDS = VGS, ID= -250 µA TJ = 125°C RDS(ON) mV/oC -36 Static Drain-Source On-Resistance mV/oC 2.2 -1 -1.4 -2 -0.8 -1.08 -1.6 0.037 0.042 0.053 0.075 0.021 0.025 VGS = -4.5 V, ID = -15 A TJ = 125°C VGS = -10 V, ID = -19 A -20 V Ω ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V A gFS Forward Transconductance VDS = -4.5 V, ID = -19 A 20 S VDS = -15 V, VGS = 0 V, f = 1.0 MHz 1570 pF 975 pF 360 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note) tD(on) Turn - On Delay Time 12.5 25 nS tr Turn - On Rise Time 60 120 nS tD(off) Turn - Off Delay Time 50 100 nS tf Turn - Off Fall Time 52 100 nS Qg Total Gate Charge 26 36 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -15 V, ID = -5 A, VGS = -5 V, RGEN = 6 Ω VDS= -12 V ID = -30 A , VGS = -5 V 6.5 nC 11.5 nC DRAIN-SOURCE DIODE CHARACTERISTICS IS Maximum Continuos Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -15 A trr Reverse Recovery Time Irr Reverse Recovery Current VGS = 0 V, IF = -30 A dIF/dt = 100 A/µs (Note) -0.92 -30 A -100 A -1.3 V 58 ns -1.5 A Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP6030PL Rev.B1 V GS = -10V -7.0 1.6 -6.0 R DS(ON) , NORMALIZED 60 -5.0 -4.5 40 -4.0 -3.5 20 -3.0 0 DRAIN-SOURCE ON-RESISTANCE -I D , DRAIN-SOURCE CURRENT (A) Typical Electrical Characteristics V GS= -3.5 V 1.4 -4.0 -4.5 1.2 -5.0 1 -5.5 -6.0 0.8 -7.0 -10 0.6 0.4 0 1 2 3 4 0 5 10 20 T = 25°C I D = -15A 60 V GS = -4.5V 1.4 1.2 1 0.8 -25 ID = -15A A R DS(ON) , ON-RESISTANCE R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE (OHMS) 50 0.12 1.8 0.6 -50 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.6 30 -I D , DRAIN CURRENT (A) -VDS , DRAIN-SOURCE VOLTAGE (V) 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (°C) 150 0.1 125 °C 0.08 0.06 0.04 0.02 175 0 J 2 4 6 8 10 -VGS ,GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. T = -55°C A -ID , DRAIN CURRENT (A) VDS = -5V -IS , REVERSE DRAIN CURRENT (A) 30 25°C 25 125°C 20 15 10 5 0 1 2 -V GS 3 4 , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 60 10 VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.0001 0.2 0.4 -V SD 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDP6030PL Rev.B1 Typical Electrical Characteristics (continued) 5000 I D = -30A 3000 VDS = -6V -12V -24V 8 CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 10 6 4 2000 Ciss Coss 1000 500 2 0 150 0.1 0 10 20 30 40 Crss f = 1 MHz VGS = 0 V 300 0.3 1 2 5 10 20 30 -VDS , DRAIN TO SOURCE VOLTAGE (V) 50 Q g , GATE CHARGE (nC) Figure 8.Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 150 N) S(O RD 50 VGS = -4.5V SINGLE PULSE R θJC = 2.0 °C/W TC = 25°C 4000 3000 2000 1000 0 0.001 1 1 SINGLE PULSE R θJC =2° C/W TC = 25°C 5000 10m s 100 ms DC 10 2 6000 1m s 30 5 7000 10µ s 10 0µ s IT LIM POWER (W) -ID , DRAIN CURRENT (A) 100 2 5 10 20 30 50 0.01 TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE 0.1 1 10 100 1,000 SINGLE PULSE TIME (mS) - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.3 D = 0.5 R θJC (t) = r(t) * RθJC R θJC = 2.0 °C/W 0.2 0.2 0.1 0.1 P(pk) 0.05 0.05 0.03 t1 0.02 0.01 0.02 Single Pulse 0.01 0.01 0.05 t2 TJ - TC = P * RθJC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000 Figure 11. Transient Thermal Response Curve. NDP6030PL Rev.B1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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