NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
General Description
48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V.
These logic level N-Channel enhancement mode power
field effect transistors are produced using ON
Semiconductor's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand
high energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
Low drive requirements allowing operation directly from logic
drivers. VGS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
NDP6060L
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
± 16
V
ID
Drain Current
- Nonrepetitive (tP < 50 µs)
PD
NDB6060L
± 25
- Continuous
48
- Pulsed
144
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ,TSTG
Operating and Storage Temperature
TL
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 5
Units
A
100
W
0.67
W/°C
-65 to 175
°C
275
°C
Publication Order Number:
NDP6060L/D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
200
mJ
48
A
250
µA
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 48 A
IAR
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
60
V
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 16 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -16 V, VDS = 0 V
-100
nA
1
2
V
0.65
1.5
TJ = 125°C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS = 5 V, ID = 24 A
0.025
Ω
0.04
TJ = 125°C
0.02
VGS = 10 V, ID = 24 A
ID(on)
On-State Drain Current
VGS = 5 V, VDS = 10 V
48
A
gFS
Forward Transconductance
VDS = 10 V, ID = 24 A
10
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1630
2000
pF
460
800
pF
150
400
pF
15
30
nS
320
500
nS
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 48 A,
VGS = 5 V, RGEN = 15 Ω,
RGS = 15 Ω
VDS = 48 V,
ID = 48 A, VGS = 5 V
www.onsemi.com
2
49
100
nS
161
300
nS
36
60
nC
8.2
nC
21
nC
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
48
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
144
A
VSD
Drain-Source Diode Forward Voltage
1.3
V
VGS = 0 V, IS = 24 A (Note 1)
1.2
TJ = 125°C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/µs
35
75
140
ns
2
3.6
8
A
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
1.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
www.onsemi.com
3
Typical Electrical Characteristics
100
2
V
6.0
GS
5.0
80
60
R DS(on) , NORMALIZED
4.5
4.0
40
3.5
3.0
20
2.5
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS = 10V
0
3.5
4.0
1 .5
4.5
5.0
5.5
10
1
2
3
VDS , DRAIN-SOURCE VOLTAGE (V)
4
5
0
80
100
VGS = 5.0V
R DS(on), NORMALIZED
V GS = 5V
1.5
1.25
1
0.75
-25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE (°C)
150
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
60
, DRAIN CURRENT (A)
2
I D = 24A
0.5
-50
40
D
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
1.75
20
I
Figure 1. On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE
6.0
1
0 .5
0
1.8
TJ = 125°C
1.6
1.4
25°C
1.2
1
-55°C
0.8
0.6
175
0
20
40
60
80
100
I D , DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.3
T = -55°C
J
VDS = 10V
50
25°C
V GS(th) , NORMALIZED
125°C
40
30
20
10
0
1
2
3
4
5
GATE-SOURCE THRESHOLD VOLTAGE
60
I D , DRAIN CURRENT (A)
= 3.0V
VDS = VGS
1.2
I D = 250µA
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
www.onsemi.com
4
150
175
Typical Electrical Characteristics (continued)
80
I D = 250µA
1.1
10
IS , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
25°C
1
-55°C
0.1
0.01
0.001
V GS = 0V
0.0001
0.2
175
Figure 7. Breakdown Voltage Variation with
Temperature.
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD , BODY DIODE FORWARD VOLTAGE (V)
10
3000
V DS = 12V
I D = 48A
V GS, GATE-SOURCE VOLTAGE (V)
Ciss
2000
1000
Coss
500
300
f = 1 MHz
V GS = 0 V
200
Crss
100
48V
8
24V
6
4
2
0
1
2
3
V
DS
5
10
20
30
50
0
20
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
t on
t d(on)
R GEN
R GS
t d(off)
VOUT
tf
VO U T
10%
10%
INVERTED
DUT
G
90%
S
80
90%
90%
D
60
to f f
tr
RL
VIN
40
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
V DD
VGEN
1.8
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
4000
CAPACITANCE (pF)
TJ = 125°C
V IN
50%
50%
10%
PULSE W IDTH
Figure 12. Switching Waveforms.
Figure 11. Switching Test Circuit.
www.onsemi.com
5
Typical Electrical Characteristics (continued)
300
40
200
100
I D , DRAIN CURRENT (A)
25°C
30
125°C
20
10
RD
S(
O
Lim
N)
10
it
10
0µ
µs
s
50
1m
20
10
10
SINGLE PULSE
5
s
ms
10
0m
DC s
VGS = 5V
R θJC = 1.5 o C/W
T C = 25°C
2
V DS =10V
g
FS
, TRANSCONDUCTANCE (SIEMENS)
T J = -55°C
1
0
0
10
20
ID , DRAIN CURRENT (A)
30
40
1
2
3
5
10
20
30
60
100
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 13. Transconductance Variation with
Drain Current. and Temperature
Figure 14. Maximum Safe Operating. Area
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.5
0.3
R θJC (t) = r(t) * RθJC
R
θJC = 1.5 °C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.03
t1
0.02
0.01
0.02
0.01
0.01
0.02
0.05
t2
TJ - T C = P * R θ
JC (t)
Duty Cycle, D = t 1 /t2
Single Pulse
0.1
0.2
0.5
1
2
5
t1 ,TIME (m s)
10
Figure 15. Transient Thermal Response Curve.
www.onsemi.com
6
20
50
100
200
500
1000
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.
45 unit s per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bag s per Box
Conduct ive Plasti c B ag
TO-220 Packaging
Information: Figure 2.0
1080 uni ts maxi mum
quant it y per bo x
TO-220 Packaging Information
Packaging Option
Packaging type
Standard
S62Z
(no f l ow code )
Rail/Tube
BULK
45
300
530x130x83
114x102x51
Max qty per Box
1,080
1,500
Weight per unit (gm)
1.4378
1.4378
Qty per Tube/Box
Box Dimension (mm)
FSCINT Label
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
An ti-stati c
Bubbl e Sheet s
FSCINT Label
530mm x 130mm x 83mm
Intermediate box
1500 uni ts maxi mum
quant it y per intermediate box
300 units per
EO70 box
5 EO70 boxe s per per
Interm ediate Bo x
114mm x 102mm x 51mm
EO70 Immed iate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
0.123
+0.001
-0.003
0.165
0.080
Note: All dim ensions are in inches
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
0.275
0.450
±.030
F 9852
NDP4060L
1.300
±.015
0.032
±.003
20.000
+0.031
-0.065
0.160
0.800
0.275
www.onsemi.com
7
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
www.onsemi.com
8
TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
is made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled, dry
packed, and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.
CAUTION
Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label
F9835
FDB603AL
F9835
FDB603AL
F9835
FDB603AL
Customized
Label
F9835
FDB603AL
TO-263AB/D2PAK Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
Rail/Tube
800
45
L86Z
13" Dia
-
359x359x57
530x130x83
800
1,080
Weight per unit (gm)
1.4378
1.4378
Weight per Reel
1.6050
-
Max qty per Box
TO-263AB/D2PAK Unit Orientation
359mm x 359mm x 57mm
Standard Intermediate box
ESD Label
Note/Comments
Moisture Sensitive
Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 800
FSID: FDB6320L
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
DRYPACK Bag
(F63TNR)3
TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
400mm minimum or
25 empty pockets
Leader Tape
1520mm minimum or
95 empty pockets
www.onsemi.com
9
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
TO263AB/
D2PAK
(24mm)
10.60
+/-0.10
15.80
+/-0.10
W
24.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
22.25
min
11.50
+/-0.10
P1
P0
16.0
+/-0.1
4.0
+/-0.1
K0
T
4.90
+/-0.10
0.450
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
B0
21.0
+/-0.3
Tc
0.9mm
maximum
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
2PAK
TO-263AB/D
Figure 4.0
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
Reel Configuration:
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
24mm
Reel
Option
13" Dia
Dim A
Dim B
13.00
330
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
www.onsemi.com
10
Dim W1
0.961 +0.078/-0.000
24.4 +2/0
Dim W2
1.197
30.4
Dim W3 (LSL-USL)
0.941 – 0.1.079
23.9 – 27.4
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
www.onsemi.com
11
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
❖
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
