August 1996
NDP7051 / NDB7051
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
70A, 50V. RDS(ON) = 0.013Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
NDP7051
50
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
50
V
VGSS
Gate-Source Voltage - Continuous
± 20
V
ID
Drain Current
- Nonrepetitive (tP < 50 µs)
PD
NDB7051
Units
± 40
- Continuous
70
- Pulsed
210
A
Maximum Power Dissipation @ TC = 25°C
130
W
Derate above 25°C
0.87
W/°C
-65 to 175
°C
275
°C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP7051 Rev. D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
W DSS
Single Pulse Drain-Source Avalanche
Energy
VDD = 25 V, ID = 70 A
IAR
Maximum Drain-Source Avalanche Current
Min
Typ
Max
Units
500
mJ
70
A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 40 V, VGS = 0 V
50
V
TJ = 125°C
10
µA
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
4
V
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 35 A
2
TJ = 125°C
1.4
TJ = 125°C
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V, ID = 35 A
2.9
2.2
3.6
0.011
0.013
0.018
0.023
60
Ω
A
30
S
1930
pF
870
pF
310
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 25 V, ID = 70 A,
VGS = 10 V, RGEN = 5 Ω
VDS = 48 V,
ID = 70 A, VGS = 10 V
13
30
nS
98
200
nS
36
80
nS
65
150
nS
67
100
nC
11
nC
38
nC
NDP7051 Rev. D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
70
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
210
A
VSD
Drain-Source Diode Forward Voltage
0.9
1.3
V
0.8
1.2
40
105
150
ns
2
4.5
10
A
VGS = 0 V, IS = 35 A (Note 1)
TJ = 125°C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 70 A, dIF/dt = 100 A/µs
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
1.15
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7051 Rev. D
Typical Electrical Characteristics
100
3
12 10
VGS = 5.0V
8.0
80
R DS(on), NORMALIZED
7.0
60
6.0
40
5.0
20
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS =20V
2.5
6.0
2
7.0
1.5
8.0
10
1
12
20
4.5
0
0.5
0
1
2
3
VDS , DRAIN-SOURCE VOLTAGE (V)
4
0
80
100
2
2
V GS =10V
I D = 35A
V GS = 10V
1.75
R DS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
60
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 1. On-Region Characteristics.
1.5
1.25
1
0.75
0.5
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
TJ = 125°C
1.75
1.5
1.25
25°C
1
-55°C
0.75
0.5
175
0
20
40
60
I , DRAIN CURRENT (A)
80
100
D
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1 .4
60
T = -55°C
J
125°C
V GS(th) , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V DS = 10V
50
I D , DRAIN CURRENT (A)
20
25°C
40
30
20
10
0
2
3
V
GS
4
5
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
7
V DS = VGS
1 .2
I D = 250µA
1
0 .8
0 .6
0 .4
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
150
175
Figure 6. Gate Threshold Variation with
Temperature.
NDP7051 Rev. D
Typical Electrical Characteristics (continued)
100
50
I D = 250µA
I S , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
1.1
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE (°C)
150
10
T J = 125°C
25°C
-55°C
1
0.1
0.01
0.001
0.2
175
0.5
1
V SD , BODY DIODE FORWARD VOLTAGE (V)
2
20
5000
4000
VGS , GATE-SOURCE VOLTAGE (V)
I D = 70A
3000
Ciss
2000
Coss
1000
500
f = 1 MHz
V GS = 0V
300
200
0.1
Crss
V DS = 12V
24V
48V
15
10
5
0
0.2
0.5
1
2
5
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
20
0
50
VDD
t d(on)
t d(off)
120
tf
90%
90%
VOUT
DUT
G
100
t off
tr
V OUT
D
R GEN
40
60
80
Q g , GATE CHARGE (nC)
t on
RL
V IN
20
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
VGS
0.3
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature.
Figure 7. Breakdown Voltage Variation with
Temperature.
CAPACITANCE (pF)
VGS = 0V
10%
10%
INVERTED
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP7051 Rev. D
Typical Electrical Characteristics (continued)
300
200
VDS = 10V
40
R
100
TJ = -55°C
I D , DRAIN CURRENT (A)
g FS, TRANSCONDUCTANCE (SIEMENS)
50
25°C
30
125°C
20
s
us
VGS = 10V
SINGLE PULSE
o
RθJC = 1.15 C/W
TC = 25°C
1
50
10u
100
10m
s
50m
s
DC
1
40
it
500
u
1m s
s
5
0.5
30
Lim
10
0
20
)
20
2
10
(ON
50
10
0
DS
2
3
I D , DRAIN CURRENT (A)
5
10
20
V DS , DRAIN-SOURCE VOLTAGE (V)
50
80
Figure 14. Maximum Safe Operating Area.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
0.3
0.2
0.1
R θJC (t) = r(t) * R θJC
R
θJC = 1.15 °C/W
0.2
0.1
P(pk)
0.05
0.05
t1
0.02
0.03
(t)
θJC
Duty Cycle, D = t1 / t 2
0.02
Single Pulse
0.01
0.01
t2
TJ - TC = P * R
0.01
0.05
0.1
0.5
1
5
10
t ,TIME (ms)
50
100
1000
10000
1
Figure 15. Transient Thermal Response Curve.
NDP7051 Rev. D
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.
45 unit s per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bag s per Box
Conduct ive Plasti c B ag
TO-220 Packaging
Information: Figure 2.0
FSCINT Labe l samp le
FAIRCHILD SEMICONDUCTOR CORPORATION
TO-220 Packaging Information
Packaging Option
Packaging type
Qty per Tube/Box
NSID:
Standard
CBVK741B019
QTY:
FDP7060
HTB:B
1080
SPEC:
S62Z
(no f l ow code )
Rail/Tube
BULK
45
300
D/C1:
D9842
SPEC REV:
B2
QA REV:
530x130x83
114x102x51
Max qty per Box
1,080
1,500
Weight per unit (gm)
1.4378
1.4378
Box Dimension (mm)
LOT:
1080 uni ts maxi mum
quant it y per bo x
FSCINT Label
(FSCINT)
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
An ti-stati c
Bubbl e Sheet s
FSCINT Label
530mm x 130mm x 83mm
Intermediate box
1500 uni ts maxi mum
quant it y per intermediate box
300 units per
EO70 box
5 EO70 boxe s per per
Interm ediate Bo x
114mm x 102mm x 51mm
EO70 Immed iate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
0.123
+0.001
-0.003
0.165
0.080
Note: All dim ensions are in inches
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
0.275
0.450
±.030
F 9852
NDP4060L
1.300
±.015
0.032
±.003
20.000
+0.031
-0.065
0.160
0.800
0.275
August 1999, Rev. B
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
is made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled, dry
packed, and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.
CAUTION
Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label
F9835
FDB603AL
F9835
FDB603AL
F9835
FDB603AL
Customized
Label
F9835
FDB603AL
TO-263AB/D2PAK Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
Rail/Tube
800
45
L86Z
13" Dia
-
359x359x57
530x130x83
800
1,080
Weight per unit (gm)
1.4378
1.4378
Weight per Reel
1.6050
-
Max qty per Box
TO-263AB/D2PAK Unit Orientation
359mm x 359mm x 57mm
Standard Intermediate box
ESD Label
Note/Comments
Moisture Sensitive
Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 800
FSID: FDB6320L
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
DRYPACK Bag
(F63TNR)3
TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
400mm minimum or
25 empty pockets
Leader Tape
1520mm minimum or
95 empty pockets
September 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
TO263AB/
D2PAK
(24mm)
10.60
+/-0.10
15.80
+/-0.10
W
24.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
22.25
min
11.50
+/-0.10
P1
P0
16.0
+/-0.1
4.0
+/-0.1
K0
T
4.90
+/-0.10
0.450
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
B0
21.0
+/-0.3
Tc
0.9mm
maximum
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
2PAK
TO-263AB/D
Figure 4.0
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
Reel Configuration:
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
24mm
Reel
Option
13" Dia
Dim A
Dim B
13.00
330
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.961 +0.078/-0.000
24.4 +2/0
Dim W2
1.197
30.4
Dim W3 (LSL-USL)
0.941 – 0.1.079
23.9 – 27.4
August 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
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QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
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FASTr™
GTO™
HiSeC™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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