NDC7001C

DATA SHEET www.onsemi.com Field Effect Transistor Dual, N & P-Channel, Enhancement Mode D1 S1 D2 S2 G1 G2 TSOT23 6−Lead SUPERSOT−6 CASE 419BL NDC7001C General Description These dual N & P−Channel Enhancement Mode Field Effect Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on−state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply application. MARKING DIAGRAM XXX M G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package Features • Q1 0.51 A, 60 V • • • • • RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V Q2 –0.34 A, 60 V RDS(ON) = 5 W @ VGS = –10 V RDS(ON) = 7.5 W @ VGS = –4.5 V High Saturation Current High Density Cell Design for Low RDS(ON) Proprietary SUPERSOTt−6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capabilities This is a Pb−Free Device PINOUT Q2(P) 4 3 5 2 1 6 Q1(N) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Q1 Q2 Unit VDSS Drain−Source Voltage 60 −60 V VGSS Gate−Source Voltage ±20 ±20 V − Continuous (Note 1a) 0.51 −0.34 A − Pulsed 1.5 −1 ID Drain Current PD Power Dissipation for Single Operation A (Note 1a) 0.96 W (Note 1b) 0.9 W (Note 1c) TJ, TSTG Operating and Storage Temperature Range ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. 0.7 W −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit RqJA Thermal Resistance, Junction to Ambient (Note 1a) 130 °C/W RqJC Thermal Resistance, Junction to Case (Note 1) 60 °C/W © Semiconductor Components Industries, LLC, 2002 December, 2021 − Rev. 2 1 Publication Order Number: NDC7001C/D NDC7001C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 mA VGS = 0 V, ID = –250 mA Q1 Q2 60 –60 − − − − V DBV DSS Breakdown Voltage Temperature Coefficient ID = 250 mA,Ref. to 25°C ID = –250 mA,Ref. to 25°C Q1 Q2 − − 67 –57 − − mV/°C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V VDS = –48 V, VGS = 0 V Q1 Q2 − − − − 1 –1 mA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V All − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V All − − –100 nA V DT J ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage DV GS(th) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance DT J RDS(on) ID(on) gFS On−State Drain Current Forward Transconductance Q1 VDS = VGS, ID = 250 mA 1 2.1 2.5 Q2 VDS = VGS, ID = –250 mA –1 –1.9 –3.5 Q1 ID = 250 mA, Referenced to 25°C − –3.8 − Q2 ID = –250 mA, Ref. to 25°C − 3.2 − Q1 VGS = 10 V, ID = 0.51 A VGS = 4.5 V, ID = 0.35 A VGS = 10 V, ID = 0.51 A, TJ = 125°C − − − 1 2 1.7 2 4 3.5 Q2 VGS = –10 V, ID = –0.34 A VGS = – 4.5 V, ID = –0.25 A VGS = –10 V, ID = –0.34 A, TJ = 125°C − − − 1.2 1.5 1.9 5 7.5 10 Q1 VGS = 10 V, VDS = 10 V 1.5 − − Q2 VGS = –10 V, VDS = –10 V –1 − − Q1 VDS = 10 V, ID = 0.51 A − 380 − mS Q1 For Q1: VDS = 25 V, VGS = 0 V f = 1.0 MHz For Q2: VDS = –25 V, VGS = 0 V f = 1.0 MHz − 20 − pF − 66 − − 11 − − 13 − Q1 − 4.3 − Q2 − 6 − − 11.2 − − 11.2 − − 2.8 5.6 − 3.2 6.4 − 8 16 − 10 20 − 14 26 Q2 − 8 16 Q1 − 4 8 Q2 − 1 2 − 1.1 1.5 − 1.6 2.2 − 0.2 − − 0.3 − − 0.4 − mV/°C W A DYNAMIC CHARACTERISTICS Ciss Input Capacitance Q2 Coss Output Capacitance Q1 Q2 Crss RG Reverse Transfer Capacitance Gate Resistance Q1 VGS = 15 mV, f = 1.0 MHz Q2 pF pF W SWITCHING CHARACTERISTICS (Note 2) td(on) Turn–On Delay Time Q1 Q2 tr Turn–On Rise Time td(off) Turn–Off Delay Time Q1 Q2 tf Qg Turn–Off Fall Time Total Gate Charge Q1 Q1 Q2 Qgs Gate–Source Charge Q1 Q2 Qgd Gate–Drain Charge Q1 For Q1: VDS = 25 V, IDS = 1 A VGS = 10 V, RGEN = 6 W For Q2: VDS = –25 V, IDS = –1 A VGS = –10 V, RGEN = 6 W For Q1: VDS = 25 V, IDS = 0.51 A VGS= 10 V, RGEN = 6 W For Q2: VDS = –25 V, IDS = –0.35 A VGS = –10 V, RGEN = 6 W www.onsemi.com 2 ns ns ns ns nC nC nC NDC7001C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (continued) Symbol Parameter Test Conditions Min Typ Max Unit Q1 − Q2 − − 0.51 A − –0.34 DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward Voltage Q1 VGS = 0 V, IS = 0.51 A (Note 2) − 0.8 1.2 Q2 VGS = 0 V, IS = –0.34 A (Note 2) − –0.8 –1.4 trr Diode Reverse Recovery Time Q1 IF = 0.51 A, diF/dt = 100 A/ms − 18 − Q2 IF = –0.34 A, diF/dt = 100 A/ms − 16 − Qrr Diode Reverse Recovery Charge Q1 IF = 0.51 A, diF/dt = 100 A/ms − 16 − Q2 IF = –0.34 A, diF/dt = 100 A/ms − 11 − V nS nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 130°C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b. 140°C/W when mounted on a .005 in2 pad of 2 oz. copper. Scale 1:1 on letter size paper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0 %. www.onsemi.com 3 c. 180°C/W when mounted on a minimum pad. NDC7001C TYPICAL CHARACTERISTICS: N−CHANNEL 8.0 V 1.2 2.4 VGS = 10 V RDS(ON), Normalized Drain−Source On−Resistance ID, Drain Current (A) 1.5 6.0 V 0.9 5.0 V 4.5 V 0.6 4.0 V 0.3 0 0 2 4 6 2 1.8 5.0 V 1.6 6.0 V 1.4 7.0 V 1.2 10 V 0 0.3 VDS, Drain−Source Voltage (V) RDS(ON), On−Resistance (W) RDS(ON), Normalized Drain−Source On−Resistance 6 1.6 1.4 1.2 1 0.8 0.6 0.4 −50 −25 0 25 50 75 100 125 3 TA = 125°C 2 TA = 25°C 1 0 150 2 6 8 10 Figure 4. On−Resistance Variation with Gate−to−Source Voltage 10 TA = −55°C IS, Reverse Drain Current (A) ID, Drain Current (A) 4 VGS, Gate to Source Voltage (V) 125°C 1.2 25°C 0.9 0.6 0.3 0 1.5 4 Figure 3. On−Resistance Variation with Temperature VDS = 5 V 1.2 ID = 0.26 A 5 TJ, Junction Temperature (°C) 1.5 0.9 Figure 2. On−Resistance Variation with Drain Current and Gate Voltage ID = 0.51 A VGS = 10 V 1.8 0.6 ID, Drain Current (A) Figure 1. On−Region Characteristics 2 8.0 V 1 0.8 8 VGS = 4.5 V 2.2 VGS = 0 V 1 0.1 0.01 TA = 125°C 25°C −55°C 0.001 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 0.0001 0.2 9 Figure 5. Transfer Characteristics 0.4 0.6 0.8 1 VSD, Body Diode Forward Voltage (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 4 NDC7001C TYPICAL CHARACTERISTICS: N−CHANNEL (continued) VGS, Gate−Source Voltage (V) 10 ID = 0.51 A 60 VDS = 25 V 30 V 8 f = 1 MHz VGS = 0 V 50 Capacitance (pF) 48 V 6 4 2 40 30 CISS 20 COSS 10 0 0 0.2 0.4 0.6 0.8 1 1.2 0 0 1.4 CRSS 10 Qg, Gate Charge (nC) 10 ms VGS = 10 V SINGLE PULSE RqJA = 180°C/W TA = 25°C 0.01 0.1 P(pk), Peak Transient Power (W) ID, Drain Current (A) 0.1 1 100 ms 1 ms 10 ms 100 ms 1s DC 10 100 10 8 6 4 2 0 0.001 0.01 r(t), Normalized Effective Transient Thermal Resistance 0.1 100 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 180°C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 SINGLE PULSE 0.001 0.0001 10 1 Figure 10. Single Pulse Maximum Power Dissipation 0.2 0.01 60 t1, Time (s) Figure 9. Maximum Safe Operating Area 0.1 50 SINGLE PULSE RqJA = 180°C/W TA = 25°C VDS, Drain−Source Voltage (V) 1 40 Figure 8. Capacitance Characteristics 10 1 30 VDS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics RDS(ON) LIMIT 20 0.0001 0.001 TJ − TA = P * RqJA(t) Duty Cycle, D = t1 / t2 0.1 0.01 1 10 t1, Time (s) Figure 11. Transient Thermal Response Curve (Note: Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.) www.onsemi.com 5 100 1000 NDC7001C TYPICAL CHARACTERISTICS: P−CHANNEL VGS = −10 V −6.0 V 0.8 2.2 −6.0 V −4.0 V −3.5 V RDS(ON), Normalized Drain−Source On−Resistance −ID, Drain Current (A) 1 0.6 −3.0 V 0.4 0.2 0 0 1 2 3 1.8 1.6 −3.5 V 1.4 −4.0 V −4.5 V 1.2 0 0.2 −VDS, Drain−Source Voltage (V) 1 0.8 0.6 0 25 50 75 100 125 4 3 TA = 125°C 2 TA = 25°C 1 0 150 2 TJ, Junction Temperature (°C) 25°C 125°C 0.6 0.4 0.2 1 8 10 10 TA = −55°C 0.8 0 6 Figure 15. On−Resistance Variation with Gate−to−Source Voltage −IS, Reverse Drain Current (A) −ID, Drain Current (A) VDS = −5 V 4 −VGS, Gate to Source Voltage (V) Figure 14. On−Resistance Variation with Temperature 1 1 ID = −0.17 A RDS(ON), On−Resistance (W) RDS(ON), Normalized Drain−Source On−Resistance 1.2 −25 0.8 5 1.4 0.4 −50 0.6 Figure 13. On−Resistance Variation with Drain Current and Gate Voltage ID = −0.34 A VGS = 10 V 1.6 0.4 −10 V −ID, Drain Current (A) Figure 12. On−Region Characteristics 1.8 −6.0 V 1 0.8 5 4 VGS = −3.0 V 2 2 3 4 −VGS, Gate to Source Voltage (V) VGS = 0 V 1 TA = 125°C 0.1 0.01 0.001 0.2 5 Figure 16. Transfer Characteristics 25°C −55°C 0.4 0.6 0.8 1 −VSD, Body Diode Forward Voltage (V) Figure 17. Body Diode Forward Voltage Variation with Current and Temperature www.onsemi.com 6 1.2 NDC7001C TYPICAL CHARACTERISTICS: P−CHANNEL (continued) ID = −0.34 A 100 VDS = −25 V −30 V 8 f = 1 MHz VGS = 0 V 80 Capacitance (pF) −VGS, Gate−Source Voltage (V) 10 −48 V 6 4 2 CISS 60 40 CRSS 20 0 0 0.4 0.8 1.6 1.2 COSS 0 0 2 10 Qg, Gate Charge (nC) P(pk), Peak Transient Power (W) −ID, Drain Current (A) 10 ms 1 ms 10 ms 0.1 0.01 1 VGS = −10 V SINGLE PULSE RqJA = 180°C/W TA = 25°C 100 ms 1s DC 10 100 10 8 6 4 2 0 0.001 0.01 r(t), Normalized Effective Transient Thermal Resistance 0.1 100 D = 0.5 RqJA(t) = r(t) * RqJA RqJA = 180°C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 SINGLE PULSE 0.001 0.00001 10 1 Figure 21. Single Pulse Maximum Power Dissipation 0.2 0.01 60 t1, Time (s) Figure 20. Maximum Safe Operating Area 0.1 50 SINGLE PULSE RqJA = 180°C/W TA = 25°C −VDS, Drain−Source Voltage (V) 1 40 Figure 19. Capacitance Characteristics 10 1 30 −VDS, Drain to Source Voltage (V) Figure 18. Gate Charge Characteristics RDS(ON) LIMIT 20 0.0001 0.001 TJ − TA = P * RqJA(t) Duty Cycle, D = t1 / t2 0.1 0.01 1 10 t1, Time (s) Figure 22. Transient Thermal Response Curve (Note: Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.) www.onsemi.com 7 100 1000 NDC7001C ORDERING INFORMATION Device Device Marking Package Type Reel Size Tape Width Shipping† NDC7001C .01 TSOT−23−6 (Pb−free) 7” 8 mm 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SUPERSOT is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TSOT23 6−Lead CASE 419BL ISSUE A 1 SCALE 2:1 DATE 31 AUG 2020 GENERIC MARKING DIAGRAM* XXX MG G 1 XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON83292G TSOT23 6−Lead Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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