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product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NDD60N900U1
N-Channel Power MOSFET
600 V, 900 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
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Compliant
V(BR)DSS
RDS(ON) MAX
600 V
900 mW @ 10 V
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
600
V
Gate−to−Source Voltage
VGS
±25
V
ID
5.7
A
Continuous Drain
Current RqJC
Steady
State
Power Dissipation
– RqJC
Steady
State
TC = 25°C
TC = 100°C
74
W
IDM
20
A
TJ,
TSTG
−55 to
+150
°C
IS
5.7
A
Single Pulse Drain−to−Source Avalanche
Energy (ID = 2 A)
EAS
33
mJ
Peak Diode Recovery (Note 1)
dv/dt
15
V/ns
TL
260
°C
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Leads
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. ISD < 5.7 A, di/dt ≤ 400 A/ms, Vpeak < V(BR)DSS
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
NDD60N900U1
RqJC
1.7
°C/W
Junction−to−Ambient Steady State
(Note 3)
NDD60N900U1
(Note 2)
NDD60N900U1−1
(Note 2)
NDD60N900U1−35
RqJA
Junction−to−Case (Drain)
D (2)
3.6
PD
Pulsed Drain
Current
TC = 25°C
N−Channel MOSFET
°C/W
47
99
95
G (1)
S (3)
4
1
4
1 2
2
3
IPAK
CASE 369D
STYLE 2
3
DPAK
CASE 369C
STYLE 2
4
12
3
IPAK
CASE 369AD
STYLE 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 0
1
Publication Order Number:
NDD60N900U1/D
NDD60N900U1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
600
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Leakage Current
Gate−to−Source Leakage Current
IDSS
V
550
VDS = 600 V, VGS = 0 V
IGSS
mV/°C
TJ = 25°C
1
TJ = 125°C
100
VGS = ±20 V
±100
mA
nA
ON CHARACTERISTICS (Note 4)
VGS(TH)
VDS = VGS, ID = 250 mA
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Reference to 25°C, ID = 250 mA
7.2
Static Drain-to-Source On Resistance
RDS(on)
VGS = 10 V, ID = 2.5 A
820
gFS
VDS = 15 V, ID = 2.5 A
4.3
S
360
pF
Gate Threshold Voltage
Forward Transconductance
2
3.2
4
V
mV/°C
900
mW
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Effective output capacitance, energy
related (Note 6)
Co(er)
Effective output capacitance, time
related (Note 7)
Co(tr)
VDS = 50 V, VGS = 0 V, f = 1 MHz
23
1.1
VGS = 0 V, VDS = 0 to 480 V
ID = constant, VGS = 0 V,
VDS = 0 to 480 V
17
57
nC
Total Gate Charge
Qg
12
Gate-to-Source Charge
Qgs
2.5
Gate-to-Drain (“Miller”) Charge
Qgd
Plateau Voltage
VGP
5.4
V
Gate Resistance
Rg
5
W
7
ns
VDS = 300 V, ID = 5.9 A, VGS = 10 V
5.8
RESISTIVE SWITCHING CHARACTERISTICS (Note 5)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
VDD = 300 V, ID = 5.9 A,
VGS = 10 V, RG = 0 W
tf
9
17
6
SOURCE−DRAIN DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
Qrr
IS = 5.7 A, VGS = 0 V
TJ = 25°C
0.88
TJ = 100°C
0.80
270
VGS = 0 V, VDD = 30 V
IS = 5.9 A, di/dt = 100 A/ms
1.3
V
ns
130
140
1.8
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
6. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
7. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
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2
NDD60N900U1
MARKING DIAGRAMS
4
Drain
4
Drain
YWW
60N
900U1G
YWW
60N
900U1G
YWW
60N
900U1G
4
Drain
2
1 Drain 3
Gate Source
1 2 3
Gate Drain Source
IPAK
DPAK
Y
WW
G
1
Gate
3
2 Source
Drain
IPAK
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
NDD60N900U1−1G
IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDD60N900U1−35G
IPAK
(Pb-Free, Halogen-Free)
75 Units / Rail
NDD60N900U1T4G
DPAK
(Pb-Free, Halogen-Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NDD60N900U1
TYPICAL CHARACTERISTICS
10
10
VGS = 10 V to 6.5 V
9
7
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8
VGS = 5.5 V
6
5
VGS = 5.0 V
4
3
2
VGS = 4.5 V
1
0
5
10
15
20
25
30
1.5
1.4
1.3
1.2
1.1
1.0
0.9
5
6
7
8
9
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.6
ID = 2.5 A
VGS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
BVDSS, NORMALIZED BREAKDOWN VOLTAGE
VGS, GATE VOLTAGE (V)
0.6
0.4
−50
5
4
3
2
TJ = 150°C
TJ = −55°C
2
3
4
6
5
7
8
9
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 2.5 A
2.2
6
Figure 1. On−Region Characteristics
1.6
2.4
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.8
4
TJ = 25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.7
0.8
0.7
VDS = 15 V
8
1
0
VGS = 4.0 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
9
VGS = 6.0 V
1.8
1.7
TJ = 25°C
VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0
2
4
8
6
10
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.125
1.100
ID = 250 mA
1.075
1.050
1.025
1.000
0.975
0.950
0.925
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Breakdown Voltage Variation with
Temperature
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4
10
150
NDD60N900U1
10,000
1.15
1.10
ID = 250 mA
IDSS, LEAKAGE (nA)
1.05
1.00
0.95
0.90
0.85
0.80
−25
0
25
50
75
100
100
TJ = 100°C
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
1
10
100
12
300
400
500
600
300
10
9
8
7
1000
350
QT
11
VDS
QGD
150
4
3
2
1
0
250
VGS
200
QGS
6
5
100
VDS = 300 V
TJ = 25°C
ID = 5.9 A
0
2
4
6
8
10
50
12
14
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
1000
VGS = 10 V
VDD = 300 V
ID = 5.9 A
IS, SOURCE CURRENT (A)
TJ = 100°C
100
td(off)
tr
tf
10
1
200
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
100
0.1
100
Figure 7. Threshold Voltage Variation with
Temperature
CRSS
1
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
CISS
1000
1
150
125
TJ, JUNCTION TEMPERATURE (°C)
COSS
C, CAPACITANCE (pF)
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.70
−50
10,000
t, TIME (ns)
TJ = 150°C
1000
0.75
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS(th), NORMALIZED THRESHOLD VOLTAGE
TYPICAL CHARACTERISTICS
td(on)
1
10
TJ = 125°C
10
TJ = 150°C
1
0.1
100
TJ = 25°C TJ = −55°C
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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5
NDD60N900U1
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
VGS ≤ 25 V
Single Pulse
TC = 25°C
10
10 ms
1
100 ms
0.1
1 ms
10 ms
dc
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
1000
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
10
RqJC steady state = 1.7°C/W
1
Duty Cycle = 0.5
0.20
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
t, TIME (s)
Figure 14. Thermal Impedance (Junction−to−Case)
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6
1E+01
1E+02
1E+03
NDD60N900U1
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
Z
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD
ISSUE B
E
E3
L2
E2
A1
D2
D
L1
L
T
SEATING
PLANE
A
A1
b1
2X
e
A2
3X
E2
b
0.13
M
T
D2
OPTIONAL
CONSTRUCTION
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7
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
−−−
6.35
6.73
4.57
5.45
4.45
5.46
2.28 BSC
3.40
3.60
−−−
2.10
0.89
1.27
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
NDD60N900U1
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
DIM MIN
MAX
A 0.086 0.094
A1 0.000 0.005
b 0.025 0.035
b2 0.030 0.045
b3 0.180 0.215
c
0.018 0.024
c2 0.018 0.024
D 0.235 0.245
E 0.250 0.265
e
0.090 BSC
H 0.370 0.410
L 0.055 0.070
L1
0.108 REF
L2
0.020 BSC
L3 0.035 0.050
L4
−−− 0.040
Z 0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your local
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NDD60N900U1/D
