NDDP010N25AZT4H

NDDP010N25AZ Power MOSFET 250V, 10A, 420mΩ, N-Channel Features Electrical Connection  High Speed Switching  Low Gate Charge  ESD Diode-Protected Gate  100% Avalanche Tested  Pb-Free, Halogen Free and RoHS Compliance 2,4 Specifications 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings at Ta = 25C Parameter Drain to Source Voltage Symbol Value 250 V Gate to Source Voltage VGSS 30 V Drain Current (DC) ID 10 A IDP 40 PW10s, duty cycle1% Power Dissipation Tc=25C 1 PD 52 Junction Temperature Tj Storage Temperature Tstg Source Current (Body Diode) IS Avalanche Energy (Single Pulse) *1 EAS 15.5 TL 260 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds 1 Unit VDSS Drain Current (Pulse) www.onsemi.com 150  55 to +150 10 3 Packing Type:TL A Marking W 10N25 C TL AZ C LOT No. A mJ C 4 4 1 2 Thermal Resistance Ratings 3 Parameter Symbol Value Junction to Case Steady State RJC 2.40 Junction to Ambient *2 RJA 125 DPAK Unit 1 2 3 IPAK C/W Note : *1 VDD=50V, L=1mH, IAV=5A (Fig.1) *2 Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Ordering & Package Information Device NDDP010N25AZT4H NDDP010N25AZ-1H © Semiconductor Components Industries, LLC, 2014 November 2014 - Rev. 2 Package DPAK(TP-FA), SC-63, TO-252 IPAK(TP), SC-64, TO-251 Shipping Memo 700pcs. / reel Pb-Free and Halogen Free 500pcs. / bag 1 Publication Order Number : NDDP010N25AZ/D NDDP010N25AZ Electrical Characteristics at Ta  25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=250V, VGS=0V 250 1 A V Gate to Source Leakage Current IGSS VGS=±24V, VDS=0V 10 A Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 4.5 V Forward Transconductance gFS VDS=10V, ID=5A 6.5 Static Drain to Source On-State Resistance RDS(on) ID=5A, VGS=10V 320 420 m Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 2.5 S 980 pF 80 pF Crss 25 pF Turn-ON Delay Time td(on) 18 ns Rise Time tr 26 ns Turn-OFF Delay Time td(off) 44 ns Fall Time tf 31 ns Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD IS=10A, VGS=0V 0.96 Reverse Recovery Time trr See Fig.3 130 ns Reverse Recovery Charge Qrr IS=10A, VGS=0V, di/dt=100A/s 540 nC VDS=20V, f=1MHz See Fig.2 VDS=125V, VGS=10V, ID=10A 16 nC 4.7 nC 4.6 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.3 Reverse Recovery Time Test Circuit www.onsemi.com 2 Fig.2 Switching Time Test Circuit NDDP010N25AZ www.onsemi.com 3 NDDP010N25AZ www.onsemi.com 4 NDDP010N25AZ Package Dimensions NDDP010N25AZT4H DPAK / TP-FA unit : mm 1:Gate 2:Drain 3:Source 4:Drain Recommended Soldering Footprint 7.0 7.0 2.5 2.0 1.5 2.3 www.onsemi.com 5 2.3 NDDP010N25AZ Package Dimensions NDDP010N25AZ-1H IPAK / TP unit : mm 1:Gate 2:Drain 3:Source 4:Drain Note on usage : Since the NDDP010N25AZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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