NDF06N60Z

NDF06N60Z, NDP06N60Z N-Channel Power MOSFET 0.98 W, 600 Volts Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 600 V http://onsemi.com RDS(ON) (TYP) @ 3 A 0.98 Ω Applications • Adapter (Notebook, Printer, Gaming) • LCD Panel Power • Lighting Ballasts ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, L = 6.3 mH, ID = 6.0 A ESD (HBM) (JESD 22−114−B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 31 ±30 113 NDF06N60Z NDP06N60Z Unit V A A A 113 W V mJ 600 (Note 1) 6.0 (Note 2) 3.8 (Note 2) 20 (Note 2) N−Channel D (2) G (1) TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM Vesd VISO 4500 3000 − V V TO−220AB CASE 221A STYLE 5 NDF06N60ZG or NDP06N60ZG AYWW Gate Source dv/dt IS TL 4.5 (Note 3) 6.0 300 260 V/ns A °C Drain TPKG A Y WW G = Location Code = Year = Work Week = Pb−Free Package TJ, Tstg − 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu 2. Limited by maximum junction temperature 3. ISD = 6.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C ORDERING INFORMATION Device NDF06N60ZG NDP06N60ZG Package TO−220FP TO−220AB Shipping 50 Units/Rail In Development © Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 0 1 Publication Order Number: NDF06N60Z/D NDF06N60Z, NDP06N60Z THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 4) Symbol RqJC RqJA NDF06N60Z 4.0 50 NDP06N60Z 1.1 50 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current VGS = 0 V, ID = 1 mA Reference to 25°C, ID = 1 mA VDS = 600 V, VGS = 0 V VGS = ±20 V VGS = 10 V, ID = 3.0 A VDS = VGS, ID = 250 mA VDS = 15 V, ID = 3.0 A 25°C 150°C IGSS RDS(on) VGS(th) gFS Ciss Coss Crss VDD = 300 V, ID = 6.0 A, VGS = 10 V Qg Qgs Qgd Rg td(on) VDD = 300 V, ID = 6.0 A, VGS = 10 V, RG = 5 Ω tr td(off) tf 3.0 5.0 923 106 23 31 6.3 17 3.2 13 17 30 28 W ns nC 0.98 BVDSS DBVDSS/ DTJ IDSS 600 0.6 1 50 ±10 1.2 4.5 mA W V S pF V V/°C mA Test Conditions Symbol Min Typ Max Unit Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Charge Gate−to−Drain (“Miller”) Charge Gate Resistance RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 4. Insertion mounted 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. IS = 6.0 A, VGS = 0 V VGS = 0 V, VDD = 30 V IS = 6.0 A, di/dt = 100 A/ms VSD trr Qrr 338 2.0 1.6 V ns mC http://onsemi.com 2 NDF06N60Z, NDP06N60Z TYPICAL CHARACTERISTICS 12 TJ = 25°C ID, DRAIN CURRENT (A) 10 8 6 4 2 0 15 V 10 V 12 VDS ≥ 30 V ID, DRAIN CURRENT (A) 10 8 6 4 2 0 TJ = −55°C 3 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 150°C TJ = 25°C 7V 6.8 V 6.6 V 6.4 V 6.2 V 6.0 V 5.8 V 5.6 V 0 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 2 ID = 3 A TJ = 25°C 1.5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.75 Figure 2. Transfer Characteristics TJ = 25°C 1.5 1.25 VGS = 10 V 1 0.75 0.5 1 0.5 0 5 6 7 VGS (V) 8 9 10 0 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS 2.6 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.2 1.8 1.4 1.0 0.6 ID = 3 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150°C 100 TJ = 100°C 0.2 −50 −25 0 25 50 75 100 125 150 10 0 100 200 300 400 500 600 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NDF06N60Z, NDP06N60Z TYPICAL CHARACTERISTICS 2000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 1500 20 400 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 15 VDS QT 300 1000 Ciss 10 Qgs 5 TJ = 25°C ID = 6 A 0 5 10 15 20 25 30 Qgd VGS 200 500 Coss Crss 100 0 0 50 100 150 200 0 0 35 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (A) VDD = 300 V ID = 6 A VGS = 10 V t, TIME (ns) 100 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 6 5 4 3 2 1 0 0.4 VGS = 0 V TJ = 25°C td(off) tr tf td(on) 10 1 1 10 RG, GATE RESISTANCE (W) 100 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 100 10 ms 1 ms dc 1 VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 1 10 100 Figure 10. Diode Forward Voltage vs. Current ID, DRAIN CURRENT (A) 10 100 ms 10 ms 0.1 0.01 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF06N60Z http://onsemi.com 4 NDF06N60Z, NDP06N60Z TYPICAL CHARACTERISTICS 10 1.0 R(t) (C/W) 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (s) 0.1 1.0 10 100 1000 Figure 12. Thermal Impedance for NDF06N60Z LEADS HEATSINK 0.110″ MIN Figure 13. Mounting Position for Isolation Test Measurement made between leads and heatsink with all leads shorted together. http://onsemi.com 5 NDF06N60Z, NDP06N60Z PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− F Q A 123 SEATING PLANE −B− C S U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 H K −Y− G N L D 3 PL M J R DIM A B C D F G H J K L N Q R S U 0.25 (0.010) B M Y STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE TO−220AB CASE 221A−09 ISSUE AE −T− B 4 SEATING PLANE F T C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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