NDF11N50Z

NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 10.5 (Note 2) 6.7 (Note 2) 42 (Note 2) 36 ±30 190 4000 NDF11N50Z NDP11N50Z Unit V 10.5 6.7 42 145 A A A http://onsemi.com RDS(ON) (MAX) @ 4.5 A 0.52 Ω ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 500 N−Channel D (2) G (1) W V mJ V V NDF11N50ZG or NDP11N50ZG AYWW Gate TO−220 CASE 221A STYLE 5 Drain A Y WW G = Location Code = Year = Work Week = Pb−Free Package Source TO−220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM dv/dt IS TL TJ, Tstg 4.5 (Note 3) 10.5 260 − 55 to 150 V/ns A °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces). 2. Limited by maximum junction temperature 3. Id ≤ 10.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 0 1 Publication Order Number: NDF11N50Z/D NDF11N50Z, NDP11N50Z THERMAL RESISTANCE Parameter Junction−to−Case (Drain) Junction−to−Ambient Steady State (Note 4) Symbol RqJC RqJA NDF11N50Z 3.4 50 NDP11N50Z 0.9 50 Unit °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current VGS = 0 V, ID = 1 mA Reference to 25°C, ID = 1 mA VDS = 500 V, VGS = 0 V VGS = ±20 V VGS = 10 V, ID = 4.5 A VDS = VGS, ID = 100 mA VDS = 15 V, ID = 4.5 A 25°C 125°C IGSS RDS(on) VGS(th) gFS Ciss Coss Crss Qg VDD = 250 V, ID = 10.5 A, VGS = 10 V Qgs Qgd VGP Rg td(on) VDD = 250 V, ID = 10.5 A, VGS = 10 V, RG = 5 Ω tr td(off) tf 3.0 7.7 1375 166 40 46 8.7 25 6.2 1.4 15 32 40 23 V W ns nC 0.48 BVDSS DBVDSS/ DTJ IDSS 500 0.6 1 50 ±10 0.52 4.5 mA W V S pF V V/°C mA Test Conditions Symbol Min Typ Max Unit Gate−to−Source Forward Leakage ON CHARACTERISTICS (Note 5) Static Drain−to−Source On−Resistance Gate Threshold Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate−to−Source Charge Gate−to−Drain (“Miller”) Charge Plateau Voltage Gate Resistance RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 4. Insertion mounted 5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. IS = 10.5 A, VGS = 0 V VGS = 0 V, VDD = 30 V IS = 10.5 A, di/dt = 100 A/ms VSD trr Qrr 310 2.5 1.6 V ns mC http://onsemi.com 2 NDF11N50Z, NDP11N50Z TYPICAL CHARACTERISTICS 25 20 15 10 6.0 V 5 5.5 V 0 5.0 V 0 5 10 15 20 25 0 3 4 5 VGS = 10 V 7.0 V 6.5 V ID, DRAIN CURRENT (A) 25 20 15 10 5 TJ = 150°C TJ = −55°C 6 7 8 9 10 VDS = 25 V ID, DRAIN CURRENT (A) TJ = 25°C Figure 1. On−Region Characteristics VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 ID = 4.5 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0 VGS = 10 V TJ = 25°C 10.0 1 2 3 4 5 6 7 8 9 10 11 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Region versus Gate−to−Source Voltage BVDSS, NORMALIZED BREAKDOWN VOLTAGE (V) Figure 4. On−Resistance versus Drain Current and Gate Voltage RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 −50 ID = 4.5 A VGS = 10 V 1.15 ID = 1 mA 1.10 1.05 1.00 0.95 0.90 −25 0 25 50 75 100 125 150 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. On−Resistance Variation with Temperature Figure 6. BVDSS Variation with Temperature http://onsemi.com 3 NDF11N50Z, NDP11N50Z TYPICAL CHARACTERISTICS 100 3250 3000 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 0.01 C, CAPACITANCE (pF) Ciss Coss Crss TJ = 25°C VGS = 0 V f = 1 MHz IDSS, LEAKAGE (mA) 10 TJ = 150°C 1 TJ = 125°C 0.1 0 50 100 150 200 250 300 350 400 450 500 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.1 1 10 100 Figure 7. Drain−to−Source Leakage Current versus Voltage 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 VGS, GATE−TO−SOURCE VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Capacitance Variation QT 250 VDS QGS VGS QGD 150 100 VDS = 250 V ID = 10.5 A TJ = 25°C 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) 45 50 0 50 200 Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge 1000 IS, SOURCE CURRENT (A) VDD = 250 V ID = 10.5 A VGS = 10 V t, TIME (ns) 100 20 10 td(off) tr tf td(on) TJ = 150°C 1 125°C 25°C −55°C 10 1 1 10 RG, GATE RESISTANCE (W) 100 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) 300 1.2 Figure 10. Resistive Switching Time Variation versus Gate Resistance Figure 11. Diode Forward Voltage versus Current http://onsemi.com 4 NDF11N50Z, NDP11N50Z TYPICAL CHARACTERISTICS 100 VGS v 30 V SINGLE PULSE TC = 25°C 10 ms dc 1 ms 100 ms 10 ms ID, DRAIN CURRENT (A) 10 1 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Maximum Rated Forward Biased Safe Operating Area NDF11N50Z 10 DUTY CYCLE = 0.5 1 R(t) (C/W) 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 RqJC = 3.4°C/W Steady State 1E+02 1E+03 PULSE TIME (s) Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z LEADS HEATSINK 0.110″ MIN Figure 14. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 NDF11N50Z, NDP11N50Z ORDERING INFORMATION Order Number NDF11N50ZG NDP11N50ZG Package TO−220FP (Pb−Free) TO−220AB (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail (In Development) http://onsemi.com 6 NDF11N50Z, NDP11N50Z PACKAGE DIMENSIONS TO−220FP CASE 221D−03 ISSUE K −T− F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 −B− U C S H K −Y− G N L D 3 PL M J R DIM A B C D F G H J K L N Q R S U 0.25 (0.010) B M Y STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE TO−220 CASE 221A−09 ISSUE AF −T− B 4 SEATING PLANE F T C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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