May 1996
NDM3000
3 Phase Brushless Motor Driver
General Description
Features
±3.0A, ±30V, 2.5W
The NDM3000 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
High density cell design for extremely low RDS(ON).
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
________________________________________________________________________________
11,14
10
12
15
Q1
Q3
Q5
Q2
Q4
Q6
1,16
4,13
8,9
2
5
7
3,6
Absolute Maximum Ratings
Symbol
Parameter
VDSS
VGSS
T A = 25°C unless otherwise noted
NDM3000
Units
Drain-Source Voltage (All Types)
± 30
V
Gate-Source Voltage (All Types)
± 20
V
ID
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
± 3.0
A
- Pulsed
(Note 1a & 2)
± 10
PD
Total Power Dissipation
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
2.5
W
1.6
1.4
-55 to 150
°C
NDM3000 Rev. E
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1)
20
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
All
±30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = ± 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = ±20 V, VGS = 0 V
V
All
TJ=55oC
IGSS
Gate - Body Leakage, Forward
ON CHARACTERISTICS
VGS(th)
All
VGS = ±20 V, VDS = 0 V
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
Q1, Q3, Q5
VDS = VGS, ID = 250 µA
Q2, Q4, Q6
TJ=125oC
µA
±100
nA
V
Static Drain-Source
On-Resistance
VGS = -10 V, ID = -3.0 A
-1
-1.6
-3
-0.7
-1.25
-2.2
1
1.7
3
0.7
1.2
2.2
0.125
0.16
0.18
0.29
0.16
0.25
0.07
0.09
Q1, Q3, Q5
TJ=125oC
VGS = -4.5 V, ID = -1.0 A
Q2, Q4, Q6
VGS = 10 V, ID = 3.0 A
o
TJ=125 C
VGS = 4.5 V, ID = 1.0 A
ID(on)
µA
(Note 3)
TJ=125oC
RDS(ON)
±1
±25
On-State Drain Current
0.1
0.16
0.09
0.13
VGS = -10 V, VDS = -5 V
Q1, Q3, Q5
-10
VGS = 10 V, VDS = 5 V
Q2, Q4, Q6
10
Q1, Q3, Q5
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
Q1, Q3, Q5
375
Q2, Q4, Q6
360
Q1, Q3, Q5
245
Q2, Q4, Q6
260
Q1, Q3, Q5
130
Q2, Q4, Q6
105
Ω
A
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q2, Q4, Q6
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
pF
pF
pF
NDM3000 Rev. E
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
SWITCHING CHARACTERISTICS
tD(on)
Turn - On Delay Time
Q1, Q3, Q5
VDD = -15 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 Ω
Turn - On Rise Time
tr
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Type
Min
Typ
Max
Units
Q1, Q3, Q5
10
40
ns
Q2, Q4, Q6
9
40
Q1, Q3, Q5
13
40
Q2, Q4, Q6
21
40
Q1, Q3, Q5
21
90
Q2, Q4, Q6
21
90
Q1, Q3, Q5
5
50
(Note 3)
Q2, Q4, Q6
VDD = 15 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 Ω
Q1, Q3, Q5
VDS = -10 V,
ID = -3.0 A, VGS = -10 V
Q2, Q4, Q6
VDS = 10 V,
ID = 3.0 A, VGS = 10 V
Gate-Drain Charge
Q2, Q4, Q6
8
50
Q1, Q3, Q5
10
25
25
Q2, Q4, Q6
9.5
Q1, Q3, Q5
1.6
Q2, Q4, Q6
1.5
Q1, Q3, Q5
3
Q2, Q4, Q6
2.5
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
trr
Q1, Q3, Q5
-1.2
Q2, Q4, Q6
1.2
VGS = 0 V, IS = -3.0 A
(Note 3)
Q1, Q3, Q5
-0.8
-1.3
VGS = 0 V, IS = 3.0 A
(Note 3)
Q2, Q4, Q6
0.8
1.3
VGS = 0 V, I F = ±3.0 A,
dI F /dt = 100 A/µs
All
100
A
V
ns
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t ) =
T J−TA
R θJ A(t )
=
T J−TA
R θJ C+RθCA(t )
= I 2D (t ) × RDS(ON )
TJ
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50oC/W when mounted on a 1 in2 pad of 2oz cpper.
b. 80oC/W when mounted on a 0.027 in2 pad of 2oz cpper.
c. 90oC/W when mounted on a 0.0028 in2 pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDM3000 Rev. E
Typical Electrical Characteristics
-20
20
8.0
VGS = -10V
6.0
15
, DRAIN-SOURCE CURRENT (A)
5.0
4.5
4.0
10
3.5
5
-7.0
-6.0
-15
-5.5
-5.0
-10
-4.5
-4.0
-5
-3.5
-3.0
I
I
-8.0
D
3.0
D
, DRAIN-SOURCE CURRENT (A)
VGS =10V
0
0
1
2
VDS , DRAIN-SOURCE VOLTAGE (V)
0
3
0
-1
V
R DS(on) , NORMALIZED
2.5
4.0
2
4.5
5.0
1.5
6.0
8.0
10
1
0
3
6
9
ID , DRAIN CURRENT (A)
12
DRAIN-SOURCE ON-RESISTANCE
R DS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5V
VGS = 3.5V
-5
2.5
-4.0
-4.5
-5.0
2
-5.5
-6.0
1.5
-7.0
-8.0
-10
1
0.5
15
0
-3
-6
-9
I D , DRAIN CURRENT (A)
-12
-15
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
1.6
I D = 3A
R DS(ON), NORMALIZED
V GS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
TJ , JUNCTION TEMPERATURE (°C)
Figure 5. N-Channel On-Resistance Variation
with Temperature.
150
DRAIN-SOURCE ON-RESISTANCE
1.6
R DS(ON), NORMALIZED
-4
3
3
DRAIN-SOURCE ON-RESISTANCE
-2
-3
, DRAIN-SOURCE VOLTAGE (V)
Figure 2. P-Channel On-Region
Characteristics.
Figure 1. N-Channel On-Region Characteristic.
0.5
DS
I D = -3A
1.4
V GS = -10V
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. P-Channel On-Resistance Variation
with Temperature.
NDM3000 Rev. E
Typical Electrical Characteristics
2
R DS(on) , NORMALIZED
VGS = 10 V
TJ = 125°C
1.5
25°C
1
-55°C
0.5
DRAIN-SOURCE ON-RESISTANCE
R DS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
V G S = -10V
25°C
1
-55°C
0.5
0
3
6
9
I D , DRAIN CURRENT (A)
12
0
15
V DS = 10V
TJ = -55°C
V DS = -10V
125°C
-12
-15
T = -55°C
J
25°C
125°C
-8
8
I D , DRAIN CURRENT (A)
25°C
6
4
2
-6
-4
-2
0
1
2
3
4
VGS , GATE TO SOURCE VOLTAGE (V)
-1
5
1.2
-3
-4
-5
V GS , GATE TO SOURCE VOLTAGE (V)
-6
V DS = V GS
I D = 250µA
V th , NORMALIZED
1
0.9
0.8
0.7
-25
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
125
Figure 11. N-Channel Gate Threshold Variation
with Temperature.
150
GATE-SOURCE THRESHOLD VOLTAGE
1.2
1.1
0.6
-50
-2
Figure 10. P-Channel Transfer
Characteristics.
Figure 9. N-Channel Transfer
Characteristics.
GATE-SOURCE THRESHOLD VOLTAGE
I D , DRAIN CURRENT (A)
-6
-9
I D , DRAIN CURRENT (A)
-10
10
Vth , NORMALIZED
-3
Figure 8. P-Channel On-Resistance Variation with
Drain Current and Temperature.
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
0
T J = 125°C
1.5
VDS = VG S
1.1
I D = -250µA
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDM3000 Rev. E
1.1
1.12
I D = 250µA
BV DSS, NORMALIZED
1.08
1.04
1
0.96
0.92
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE BREAKDOWN VOLTAGE
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
Typical Electrical Characteristics
I D = -250µA
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
150
1000
1000
800
800
125
150
500
CAPACITANCE (pF)
CAPACITANCE (pF)
500
C iss
300
C oss
200
100
50
0.1
0.2
C iss
300
C oss
200
100
f = 1 MHz
f = 1 MHz
C rss
V GS = 0V
0.5
1
2
5
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
C rss
V GS = 0 V
50
0.1
30
Figure 15. N-Channel Capacitance
Characteristics.
0.2
0.5
1
2
5
10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 16. P-Channel Capacitance
Characteristics.
10
10
V DS = 10V
20V
-VGS , GATE-SOURCE VOLTAGE (V)
I D = 3A
V GS , GATE-SOURCE VOLTAGE (V)
0
25
50
75
100
T J , JUNCTION TEMPERATURE (°C)
Figure 14. P-Channel Breakdown Voltage
Variation with Temperature.
Figure 13. N-Channel Breakdown Voltage
Variation with Temperature.
8
15V
6
4
2
0
-25
0
2
4
6
8
Q g , GATE CHARGE (nC)
10
12
Figure 17. N-Channel Gate Charge Characteristics.
I D = -3A
V DS = -10V
-20V
8
-15V
6
4
2
0
0
2
4
6
8
Q g , GATE CHARGE (nC)
10
12
Figure 18. P-Channel Gate Charge Characteristics.
NDM3000 Rev. E
Typical Electrical Characteristics
10
6
, TRANSCONDUCTANCE (SIEMENS)
, TRANSCONDUCTANCE (SIEMENS)
V DS = -10V
T J = -55°C
V DS =10V
8
25°C
125°C
6
4
25°C
4
125°C
3
2
1
g
g
FS
FS
2
TJ = -55°C
5
0
0
2
4
6
8
10
0
0
-2
I D , DRAIN CURRENT (A)
ID
Figure 19. N-Channel Transconductance Variation with
Drain Current and Temperature.
ton
t d(on)
VGS
t d(off)
tf
90%
90%
V OUT
VO U T
10%
R GEN
10%
DUT
G
90%
V IN
S
-10
to f f
tr
RL
D
-8
Figure 20. P-Channel Transconductance Variation
with Drain Current and Temperature.
VDD
V IN
-4
-6
, DRAIN CURRENT (A)
50%
50%
10%
PULSE WIDTH
Figure 21. N or P-Channel Switching Test Circuit.
Figure 22. N or P-Channel Switching Waveforms.
NDM3000 Rev. E
3.5
4
3
3.5
ID , DC DRAIN CURRENT (A)
DC POWER DISSIPATION (W)
Typical Thermal and Electrical Characteristics
1a
2.5
2
1b
1c
1.5
4.5"x5" FR-4 PCB
Ta = 25C
Still Air
1
3
2.5
1b
2 1c
1
0.2
0.4
0.6
4.5"x5" FR-4 PCB
Ta = 25C
Still Air
Vgs = -10V
1.5
0.5
0
1a
0.8
1
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
2oz COPPER MOUNTING PAD AREA (in 2)
1
Figure 24. P-Ch DC Drain Current Capability versus
Copper Mounting Pad Area.
Figure 23. SOIC-16 3 Leadframe Device DC Power
Dissipation versus Copper Mounting Pad Area
10
5
1m
3
±I D, DRAIN CURRENT (A)
1a
4
3.5
1b
3 1c
4.5"x5" FR-4 PCB
Ta = 25C
Still Air
Vgs = 10V
2.5
2
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
RD
10
0m
s
ms
s
1s
10
0.3
s
DC
V GS = ±10V
0.1
SINGLE PULSE
R θJ A = See Note 1c
T A = 25°C
0.01
0.1
1
S(O
LI
N)
1
0.03
Figure 25. N-Ch DC Drain Current Capability
versus Copper Mounting Pad Area.
0.2
0.5
1
2
5
10
±V DS , DRAIN-SOURCE VOLTAGE (V)
30
50
Figure 26. P-Ch Typical Safe Operating Area
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
ID , DC DRAIN CURRENT (A)
4.5
10
T
MI
0.5
D = 0.5
0.2
0.2
0.1
0.05
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1c
θ
0.1
0.05
P(pk)
0.02
0.02
0.01
0.01
t1
Single Pulse
0.005
t2
TJ - T
= P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
A
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 27. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDM3000 Rev. E
SOIC-16 Tape and Reel Data and Package Dimensions
SOIC(16lds) Packaging
Configuration: Figure 1.0
Packaging Description:
SOIC-16 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
FD85AB
NDM3001
Qty per Reel/Tube/Bag
Reel Size
Standard
(no flow code)
TNR
Rail/Tube
2,500
45
Pin 1
L86Z
13" Dia
-
343x64x343
530x130x83
Max qty per Box
5,000
13,500
Weight per unit (gm)
0.1437
0.1437
Weight per Reel (kg)
0.7735
-
Box Dimension (mm)
FD85AB
NDM3001
Packaging type
FD85AB
NDM3001
Packaging Option
NDM3001
SOIC (16lds) Packaging Information
FD85AB
FD85AB
NDM3001
Customized
Label
SOIC-16 Unit Orientation
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label
F63TNR Label sample
LOT: CBVK741B019
QTY: 2500
FSID: NDM3000
SPEC:
F63TNR Label
ESD Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(16lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
October 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC(16lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOIC(16lds)
(16mm)
6.60
+/-0.30
10.35
+/-0.25
W
16.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
14.25
min
7.50
+/-0.05
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
T
Wc
Tc
2.40
+/-0.40
0.450
+/-0.150
13.0
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
B0
0.9mm
maximum
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(16lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim D
min
Dim A
max
Dim N
DETAIL AA
W3
See detail AA
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
16mm
Reel
Option
13" Dia
Dim A
Dim B
13.00
330
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.646 +0.078/-0.000
16.4 +2/0
Dim W2
0.882
22.4
Dim W3 (LSL-USL)
0.626 – 0.764
15.9 – 19.4
July 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC-16 (FS PKG Code S3)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1437
October 1999, Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
