March 1996
NDP7050 / NDB7050
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
75A, 50V. RDS(ON) = 0.013Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through
hole and surface mount applications.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
NDP7050
VDSS
Drain-Source Voltage
50
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
50
V
VGSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (tP < 50 µs)
ID
Drain Current
NDB7050
Units
± 40
- Continuous
75
- Pulsed
225
PD
Maximum Power Dissipation @ TC = 25°C
150
W
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
Derate above 25°C
© 1997 Fairchild Semiconductor Corporation
A
1
W/°C
-65 to 175
°C
275
°C
NDP7050.SAM Rev. D
Electrical Characteristics (T
Symbol
C
= 25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
550
mJ
75
A
250
µA
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
WDSS
Single Pulse Drain-Source Avalanche
Energy
IAR
Maximum Drain-Source Avalanche Current
VDD = 25 V, ID = 75 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
50
V
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
V
TJ = 125°C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
2
2.8
4
1.4
2.1
3.6
0.01
0.013
0.015
0.023
VGS = 10 V, ID = 40 A
TJ = 125°C
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
75
gFS
Forward Transconductance
VDS = 10 V, ID = 37.5 A
15
Ω
A
39
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
2960
3600
pF
1130
1600
pF
380
800
pF
17
30
nS
128
400
nS
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
VDD = 30 V, ID = 75 A,
VGS = 10 V, RGEN = 5 Ω
tD(off)
Turn - Off Delay Time
54
80
nS
tf
Turn - Off Fall Time
90
200
nS
Qg
Total Gate Charge
100
115
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 48 V,
ID = 75 A, VGS = 10 V
14.5
nC
51
nC
NDP7050.SAM Rev. D
Electrical Characteristics (T
C
Symbol
= 25°C unless otherwise noted)
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
75
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
225
A
VSD
Drain-Source Diode Forward Voltage
V
VGS = 0 V, IS = 37.5 A (Note 1)
TJ = 125°C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs
2
0.9
1.3
0.84
1.2
80
150
ns
4.8
10
A
1
°C/W
62.5
°C/W
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7050.SAM Rev. D
Typical Electrical Characteristics
2 .5
120
1 0 8 .0
7 .0
100
V GS = 5 .0 V
R DS(on) , NORMALIZED
6 .5
80
6 .0
60
5 .5
40
5 .0
20
4 .5
4 .0
0
1
2
3
V DS , DRAIN-SOURCE VOLTAGE (V)
4
7.0
1 .5
8.0
10
12
20
1
0
20
40
60
80
I D , DRA IN CURRENT (A)
100
120
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
1 .8
VGS = 10V
I D = 40A
1.8
V GS = 10V
R DS(on) , NORMALIZED
1.6
1.4
1.2
1
0.8
0.6
0.4
-5 0
-25
0
25
50
75
100
125
TJ , JUNCTION TEM PERATURE (°C)
150
DRAIN-SOURCE ON-RESISTANCE
R DS(ON), NORMALIZED
6.5
5
Figure 1. On-Region Characteristics.
DRAIN-SOURCE ON-RESISTANCE
5.5
6 .0
2
0 .5
0
TJ = 125°C
1 .6
1 .4
1 .2
25°C
1
0 .8
-55°C
0 .6
175
0
Figure 3. On-Resistance Variation
with Temperature.
20
40
60
80
I D , DRAIN CURRENT (A)
100
120
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
60
50
V GS(th) , NORMALIZED
T = -55°C
J
40
125°C
25°C
30
20
10
0
2
3
4
5
6
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
7
GATE-SOURCE THRESHOLD VOLTAGE
1 .2
V DS = 10V
I D , DRAIN CURRENT (A)
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
VGS = 2 0 V
VDS = VGS
1 .1
ID = 250µA
1
0 .9
0 .8
0 .7
0 .6
0 .5
-5 0
-25
0
25
50
75
100
125
TJ , JUNCTION TEM PERATURE (°C)
150
175
Figure 6. Gate Threshold Variation with
Temperature.
NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)
100
50
I D = 250µA
I S , REVERSE DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1 .15
1 .1
1 .05
1
0 .95
0 .9
-50
-25
0
TJ
25
50
75
100
125
, JUNCTION TEM PERATURE (°C)
150
TJ = 1 2 5 ° C
1
25°C
-5 5 ° C
0.1
0.01
0.001
0.2
175
Figure 7. Breakdown Voltage Variation with
Temperature.
0.4
0.6
0.8
1
1.2
V SD , BODY DIODE FORW A RD VOLTAGE (V)
20
VGS , GATE-SOURCE VOLTAGE (V)
Ciss
3000
2000
Coss
1000
f = 1 MHz
500
V GS = 0V
Crss
300
ID = 75A
V DS = 1 2 V
15
48V
24V
10
5
200
0
1
2
5
10
20
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
60
Figure 9. Capacitance Characteristics.
0
25
t on
t d (o n )
R GEN
t d (off)
150
tf
90%
90%
V OUT
D
125
t off
tr
RL
V IN
50
75
100
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
VDD
VGS
1.4
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
5000
CAPACITANCE (pF)
V GS = 0V
10
VOUT
10%
10%
INVERTED
DUT
G
90%
V IN
S
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP7050.SAM Rev. D
Typical Electrical Characteristics (continued)
300
VDS = 1 0 V
TJ = -55°C
50
R DS(O
100
I D , DRAIN CURRENT (A)
25°C
40
125°C
30
20
10
N)
Lim
100
it
1m
10m
30
100
µs
s
s
ms
DC
10
V GS = 20V
3
SINGLE PULSE
o
R θJC = 1 C/W
1
T C = 25°C
g
FS
, TRANSCONDUCTANCE (SIEMENS)
60
0
0
10
20
30
40
I D , DRA IN CURRENT (A)
50
60
Figure 13. Transconductance Variation with
Drain Current and Temperature.
0.3
1
2
3
5
10
20
30
V DS , DRA IN-SOURCE VOLTAGE (V))
50
100
Figure 14. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.5
0.3
R θJC (t) = r(t) * RθJC
R θJC = 1.0 °C/W
0.2
0.2
0 .1
0.1
P(pk)
0 .0 5
0.0 5
t1
0 .0 2
0.0 3
0.0 2
0 .0 1
Single Pulse
0.0 1
0.01
0.05
t2
TJ - T C = P * RθJC (t)
Duty Cycle, D = t 1 /t2
0.1
0.5
1
5
t 1 ,TIM E (m s)
10
50
100
500
1000
Figure 15. Transient Thermal Response Curve.
NDP7050.SAM Rev. D
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith antistatic bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.
45 unit s per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bag s per Box
Conduct ive Plasti c B ag
TO-220 Packaging
Information: Figure 2.0
FSCINT Labe l samp le
FAIRCHILD SEMICONDUCTOR CORPORATION
TO-220 Packaging Information
Packaging Option
Packaging type
Qty per Tube/Box
NSID:
Standard
CBVK741B019
QTY:
FDP7060
HTB:B
1080
SPEC:
S62Z
(no f l ow code )
Rail/Tube
BULK
45
300
D/C1:
D9842
SPEC REV:
B2
QA REV:
530x130x83
114x102x51
Max qty per Box
1,080
1,500
Weight per unit (gm)
1.4378
1.4378
Box Dimension (mm)
LOT:
1080 uni ts maxi mum
quant it y per bo x
FSCINT Label
(FSCINT)
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
An ti-stati c
Bubbl e Sheet s
FSCINT Label
530mm x 130mm x 83mm
Intermediate box
1500 uni ts maxi mum
quant it y per intermediate box
300 units per
EO70 box
5 EO70 boxe s per per
Interm ediate Bo x
114mm x 102mm x 51mm
EO70 Immed iate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
0.123
+0.001
-0.003
0.165
0.080
Note: All dim ensions are in inches
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
0.275
0.450
±.030
F 9852
NDP4060L
1.300
±.015
0.032
±.003
20.000
+0.031
-0.065
0.160
0.800
0.275
August 1999, Rev. B
TO-220 Tape and Reel Data and Package Dimensions, continued
TO-220 (FS PKG Code 37)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
is made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled, dry
packed, and placed inside a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.
CAUTION
Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label
F9835
FDB603AL
F9835
FDB603AL
F9835
FDB603AL
Customized
Label
F9835
FDB603AL
TO-263AB/D2PAK Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Standard
(no flow code)
TNR
Rail/Tube
800
45
L86Z
13" Dia
-
359x359x57
530x130x83
800
1,080
Weight per unit (gm)
1.4378
1.4378
Weight per Reel
1.6050
-
Max qty per Box
TO-263AB/D2PAK Unit Orientation
359mm x 359mm x 57mm
Standard Intermediate box
ESD Label
Note/Comments
Moisture Sensitive
Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 800
FSID: FDB6320L
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
DRYPACK Bag
(F63TNR)3
TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
400mm minimum or
25 empty pockets
Leader Tape
1520mm minimum or
95 empty pockets
September 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
TO263AB/
D2PAK
(24mm)
10.60
+/-0.10
15.80
+/-0.10
W
24.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
22.25
min
11.50
+/-0.10
P1
P0
16.0
+/-0.1
4.0
+/-0.1
K0
T
4.90
+/-0.10
0.450
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
B0
21.0
+/-0.3
Tc
0.9mm
maximum
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
2PAK
TO-263AB/D
Figure 4.0
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
Reel Configuration:
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
24mm
Reel
Option
13" Dia
Dim A
Dim B
13.00
330
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.961 +0.078/-0.000
24.4 +2/0
Dim W2
1.197
30.4
Dim W3 (LSL-USL)
0.941 – 0.1.079
23.9 – 27.4
August 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
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QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
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FASTr™
GTO™
HiSeC™
SyncFET™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
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As used herein:
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2. A critical component is any component of a life
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systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
