NDS0610

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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. • −0.12A, −60V. RDS(ON) = 10 Ω @ VGS = −10 V RDS(ON) = 20 Ω @ VGS = −4.5 V • Voltage controlled p-channel small signal switch • High density cell design for low RDS(ON) • High saturation current D D S G SOT-23 S G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage −60 V VGSS Gate-Source Voltage ±20 V ID Drain Current −0.12 A – Continuous (Note 1) −1 – Pulsed Maximum Power Dissipation PD (Note 1) Derate Above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds TL 0.36 2.9 W mW/°C −55 to +150 °C 300 °C 350 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 610 NDS0610 7’’ 8mm 3000 units 2002 Fairchild Semiconductor Corporation NDS0610 Rev B(W) NDS0610 July 2002 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID = –10 µA VGS = 0 V, ID = –10 µA,Referenced to 25°C VDS = –48 V, –60 V mV/°C –53 VGS = 0 V µA –1 VDS = –48 V,VGS = 0 V TJ = 125°C –200 µA VGS = ±20 V, VDS = 0 V ±10 nA VDS = VGS, ID = –1 mA (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance –1 ID = –1 mA,Referenced to 25°C ID(on) On–State Drain Current VGS = –10 V, ID = –0.5 A VGS = –4.5 V, ID = –0.25 A VGS = –10 V,ID = –0.5 A,TJ=125°C VGS = –10 V, VDS = – 10 V gFS Forward Transconductance VDS = –10V, ID = – 0.1 A VDS = –25 V, f = 1.0 MHz V GS = 0 V, –1.7 3 –3.5 1.0 1.3 1.7 10 20 16 Ω –0.6 70 V mV/°C A 430 mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) 79 pF 10 pF 4 pF VGS = –15 mV, f = 1.0 MHz 10 Ω VDD = –25 V, VGS = –10 V, 2.5 5 ns (Note 2) Turn–On Delay Time ID = – 0.12 A, RGEN = 6 Ω tr Turn–On Rise Time 6.3 12.6 ns td(off) Turn–Off Delay Time 10 15 ns tf Turn–Off Fall Time 7.5 15 ns Qg Total Gate Charge 1.8 2.5 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –48 V, VGS = –10 V ID = –0.5 A, 0.3 nC 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = –0.24 A(Note 2) IF = –0.5A diF/dt = 100 A/µs (Note 2) –0.8 –0.24 A –1.5 V 17 nS 15 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 350°C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NDS0610 Rev B(W) NDS0610 Electrical Characteristics NDS0610 Typical Characteristics 1.4 -4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 2.2 -4.5V VGS=-10V -6.0V 1.2 -3.5V 1 0.8 -3.0V 0.6 0.4 -2.5V 0.2 0 2 VGS=-3.0V 1.8 1.6 -3.5V 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0.8 0 1 2 3 4 5 6 0 0.2 0.4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.8 1 1.2 1.4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 5 1.8 ID = -0.5A VGS = -10V 1.6 ID = -0.25A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 -ID, DRAIN CURRENT (A) 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 4 3 TA = 125oC 2 1 TA = 25oC 0 150 2 4 6 8 10 o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 1.2 25oC TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -10V -ID, DRAIN CURRENT (A) 1 125oC 0.8 0.6 0.4 0.2 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDS0610 Rev B(W) NDS0610 Typical Characteristics 100 VDS = -12V ID = -0.5A 8 80 -48V 6 4 60 40 COSS 2 20 0 0 CRSS 0 0.4 0.8 1.2 1.6 2 0 10 Qg, GATE CHARGE (nC) 30 40 50 60 Figure 8. Capacitance Characteristics. 5 P(pk), PEAK TRANSIENT POWER (W) 10 100us 1 RDS(ON) LIMIT 1ms 10ms 100ms 1s 0.1 10s DC VGS = -10V SINGLE PULSE RθJA = 350oC/W 0.01 TA = 25oC 0.001 1 10 100 SINGLE PULSE RθJA = 350°C/W TA = 25°C 4 3 2 1 0 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -24V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 RθJA = 350oC/W 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design. NDS0610 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FASTâ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I