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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
This 60V P-Channel MOSFET is produced using
Fairchild Semiconductor’s high voltage Trench process.
It has been optimized for power management
plications.
• –2.5 A, –60 V. RDS(ON) = 300mΩ @ VGS = –10 V
RDS(ON) = 500mΩ @ VGS = –4.5 V
• High density cell design for extremely low RDS(ON)
Applications
• High power and current handling capability in a widely
used surface mount package.
•
DC/DC converter
•
Power management
D
D
D
D
S
S
D
G
SOT-223
G
D
SOT-223 *
G
S
(J23Z)
Absolute Maximum Ratings
Symbol
S
G
TA=25oC unless otherwise noted
Ratings
Parameter
Units
VDSS
Drain-Source Voltage
–60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–2.5
A
– Continuous
(Note 1a)
– Pulsed
PD
–15
Maximum Power Dissipation
(Note 1a)
3.0
(Note 1b)
1.3
(Note 1c)
TJ, TSTG
W
1.1
–55 to +150
°C
(Note 1a)
42
°C/W
(Note 1)
12
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
2955
2002 Fairchild Semiconductor Corporation
Device
Reel Size
Tape width
Quantity
NDT2955
13’’
12mm
2500 units
NDT2955 Rev.1.4
NDT2955
April 2015
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Avalanche Ratings
W DSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 30 V, ID = 2.5 A
174
mJ
Off Characteristics
VGS = 0 V,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = –60 V,
VGS = 0 V
–10
µA
IGSSF
Gate–Body Leakage, Forward
VGS = –20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
ID = –250 µA
On Characteristics
–60
V
–60
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
–2
–2.6
5.7
–4
V
95
163
153
ID(on)
On–State Drain Current
VGS = –10 V, ID = –2.5 A
VGS = –4.5 V, ID = –2 A
VGS=–10 V, ID =–2.5 A, TJ=125°C
VGS = –10 V, VDS = –5 V
gFS
Forward Transconductance
VDS = –10 V,
ID = –2.5 A
5.5
VDS = –30 V,
f = 1.0 MHz
V GS = 0 V,
601
pF
85
pF
35
pF
mV/°C
300
500
513
–12
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –30 V,
VGS = –10 V,
VDS = –30 V,
VGS = –10 V
ID = –1 A,
RGEN = 6 Ω
ID = –2.5 A,
12
21
ns
10
20
ns
19
34
ns
6
12
ns
11
15
nC
2.4
nC
2.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –2.5 A
Voltage
IF = –2.5 A,
Diode Reverse Recovery Time
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
(Note 2)
–0.8
–2.5
A
–1.2
V
25
nS
40
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 42°C/W when
2
mounted on a 1in
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
2
in pad of 2 oz
copper
c) 110°C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDT2955 Rev.1.4
NDT2955
Electrical Characteristics
NDT2955
Typical Characteristics
2
12
-6.0V
-7.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V
-5.0V
9
6
-4.5V
3
-4.0V
VGS=-4.5V
1.8
1.6
-5.0V
1.4
-6.0V
1.2
-7.0V
-10V
0.8
0
0
1
2
3
4
0
5
3
Figure 1. On-Region Characteristics.
9
12
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.35
1.8
ID = -1.3A
ID = -2.5A
VGS = -10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
0.3
0.25
TA = 125oC
0.2
0.15
TA = 25oC
0.1
0.05
0.4
-50
-25
0
25
50
75
100
125
2
150
4
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature.
10
8
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
-IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = -10V
6
-VGS, GATE TO SOURCE VOLTAGE (V)
o
-ID, DRAIN CURRENT (A)
-8.0V
1
125oC
8
6
4
2
0
VGS =0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
2.5
3.5
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5.5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDT2955 Rev.1.4
6.70
6.20
0.10
B
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
1
6.10
1.90
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
C
0.08
C
0.10
0.00
10°
5°
GAGE
PLANE
R0.15±0.05
R0.15±0.05
10° TYP
0°
0.25
SEATING
PLANE
10°
5°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1
0.35
0.20
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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