NDT3055L

NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 4 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.120 Ω @ VGS = 4.5 V. These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. SuperSOTTM-3 Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-8 SuperSOTTM-6 D D SO-8 D D S S D SOT-223 SOIC-16 SOT-223 D G G S SOT-223* G G S (J23Z) Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter NDT3055L Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage - Continuous ±20 V ID Maximum Drain Current - Continuous 4 A (Note 1a) - Pulsed PD 25 Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Storage Temperature Range 3 W 1.3 1.1 -65 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W * Order option J23Z for cropped center drain lead. © 1998 Semiconductor Components Industries, LLC. September-2017, Rev.1 Publication Order Number: NDT3055L/D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA o mV/o C 55 TJ =125°C ON CHARACTERISTICS 1 µA 50 µA 100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A VGS = 4.5 V, ID = 3.7 A On-State Drain Current VGS = 5 , VDS = 10 V gFS Forward Transconductance VDS = 5 V, ID = 4 A 2 V mV /oC -4 TJ =125°C ID(ON) 1.6 0.07 0.1 0.125 0.18 0.103 0.12 10 Ω A 7 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25, VGS = 0 V, f = 1.0 MHz 345 pF 110 pF 30 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 25, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 40 V, ID = 4 A, VGS = 10 V 5 20 ns 7.5 20 ns 20 50 ns 7 20 ns 13 20 nC 1.7 nC 3.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A 0.8 (Note 2) 2.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 42oC/W when mounted on a 1 in2 pad of b. 95oC/W when mounted on a 2oz Cu. pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 0.066 in2 c. 110oC/W when mounted on a 0.00123 in2 pad of 2oz Cu. Typical Electrical Characteristics 2 VGS= 10V 6.0V 20 R DS(ON) , NORMALIZED 5.0V 4.5V 15 4.0V 10 3.5V 5 3.0V 0 0 1 2 3 4 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 25 1.8 VGS = 4.0V 1.6 4.5V 5.0V 1.4 6.0V 1.2 8.0V 10V 1 0.8 5 0 5 10 15 I D, DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.28 R DS(ON) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 2A I D = 4.0 A VGS = 10 V 1.4 1.2 1 0.8 0.6 -50 0.24 0.2 0.16 TA = 125°C 0.12 0.08 25°C 0.04 0 -25 0 25 50 75 100 125 150 2 4 Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to- Source Voltage. 10 30 8 IS , REVERSE DRAIN CURRENT (A) TJ = -55°C 25°C 125°C VDS = 5V ID , DRAIN CURRENT (A) 6 V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) 6 4 2 0 25 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.6 20 1 1.5 2 2.5 3 3.5 4 4.5 10 V GS = 0V 1 0.1 25°C -55°C 0.01 0.001 0.0001 5 VGS , GATE TO SOURCE VOLTAGE (V) TA = 125°C 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Current and Temperature. www.onsemi.com 3 Typical Electrical Characteristics (continued) I D = 4A 500 VDS = 10V 30V 8 CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 1000 10 40V 6 4 Ciss 200 Coss 100 50 2 0 Crss f = 1 MHz VGS = 0V 20 0 2 4 6 8 10 12 10 0.1 14 0.3 Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 1m 10m 10 1s 10 s DC 0.3 VGS = 10V SINGLE PULSE R θJA = 110o C/W TA = 25°C 0.2 0.5 0m 0u 30 60 SINGLE PULSE RθJA =110°C/W TA = 25°C s s 60 POWER (W) N) S(O RD 1 s s 40 20 1 2 5 10 30 0 0.001 60 100 0.01 VDS , DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 R θJA (t) = r(t) * R θJA R θJA = 110 °C/W P(pk) 0.01 t1 0.005 Single Pulse t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t1 / t 2 0.002 0.001 0.0001 0.001 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID , DRAIN CURRENT (A) 10 IT LIM 3 0.01 0.1 10 80 10 0.03 4 Figure 8. Capacitance Characteristics. 50 0.1 1 V DS , DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 10 100 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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