NDTL03N150CG

NDTL03N150C Power MOSFET 1500V, 10.5Ω, 2.5A, N-Channel Features • Low On-Resistance • Ultra High Voltage • High Speed Switching • 100% Avalanche Tested • Pb-Free and RoHS compliance www.onsemi.com VDSS RDS(on) Max 10.5Ω@10V 1500V Typical Applications • Switch mode power supply • AC Drive ID Max 2.5A ELECTRICAL CONNECTION N-Channel 2 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1, 2, 3, 4) Parameter Drain to Source Voltage Gate to Source Voltage Symbol VDSS VGSS ID Drain Current (DC) Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Value 1500 ±30 2.5 Unit V V A IDP 5 A PD 2.5 140 W 1 : Gate 2 : Drain 3 : Source 1 3 MARKING Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Avalanche Energy (Single Pulse) (Note 2) EAS 34 mJ Avalanche Current (Note 3) IAV 2.5 A Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Note 2 : VDD=50V, L=10mH, IAV=2.5A (Fig.1) Note 3 : L≤10mH, Single Pulse 1 THERMAL RESISTANCE RATINGS Junction to Ambient (Note 4) Note 4 : Insertion mounted Symbol Value RθJC 0.89 RθJA 50.0 © Semiconductor Components Industries, LLC, 2016 March 2016 - Rev. 2 2 TO-3P-3L 3 ORDERING INFORMATION Parameter Junction to Case Steady State 03N150 C LOT No. 1 Unit See detailed ordering and shipping information on page 5 of this data sheet. °C/W Publication Order Number : NDTL03N150C/D NDTL03N150C ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 5, 6, 7) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance Input Capacitance RDS(on) Conditions ID=10mA, VGS=0V VDS=1200V, VGS=0V VGS=30V, VDS=0V VDS=10V, ID=1mA Value min typ max 1500 Unit V 2 VDS=20V, ID=1.25A 1.9 ID=1.25A, VGS=10V 8 1 mA ±100 nA 4 V S 10.5 Ω 650 pF 70 pF Crss 20 pF td(on) 15 ns tr 24 ns 140 ns Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time td(off) Fall Time Total Gate Charge tf Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD Reverse Recovery Time trr VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=2.5A 47 ns 34 nC 4.7 nC 15 IS=2.5A, VGS=0V 0.8 350 nC 1.5 V ns See Fig.3 IS=2.5A, VGS=0V, di/dt=100A/μs Reverse Recovery Charge Qrr 2220 nC Effective Output Capacitance, Co(er) 18.3 pF Energy Related (Note 6) VGS=0V, VDS=0 to 1200V Effective Output Capacitance, Co(tr) 29.6 pF Time Related (Note 7) Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. Note 7 : Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. Fig. 1 Unclamped Inductive Switching Test Circuit Fig. 2 Switching Time Test Circuit Fig. 3 Reverse Recovery Time Test Circuit www.onsemi.com 2 NDTL03N150C www.onsemi.com 3 NDTL03N150C www.onsemi.com 4 NDTL03N150C PACKAGE DIMENSIONS unit : mm TO-3P-3L CASE 340AF ISSUE A B A E A Q 4 A1 SEATING PLANE P1 P D1 D D2 L1 E1 NOTE 3 L 2X b1 1 2 3 3X b2 b c BOTTOM VIEW A2 e SIDE VIEW TOP VIEW 1 : Gate NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE PROTRUSIONS. MOLD FLASH OR GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSIONS b1 AND b2 DO NOT INCLUDE - DAMBAR PROTRU SION. DAMBAR PROTRUSION SHALL NOT EXCEED 0.10. DIM A A1 A2 b b1 b2 c D D1 D2 E E1 e L L1 P P1 Q MILLIMETERS MIN NOM MAX 5.00 4.60 4.80 1.65 1.45 1.50 1.60 1.20 1.40 1.20 0.80 1.00 1.80 2.00 2.20 3.20 2.80 3.00 0.75 0.55 0.60 19.70 19.90 20.10 16.56 16.76 16.96 9.80 10.00 10.20 15.40 15.60 15.80 13.40 13.60 13.80 5.75 5.15 5.45 19.80 20.00 20.20 3.70 3.30 3.50 3.00 3.20 3.40 7.20 6.80 7.00 5.20 4.80 5.00 GENERIC MARKING DIAGRAM* 2 : Drain 3 : Source XXXXXG AYWW XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, “G”, may or not be present. ORDERING INFORMATION Device NDTL03N150CG Marking Package Shipping (Qty / Packing) 03N150C TO-3P-3L (Pb-Free) 30 / Tube Note on usage : Since the NDTL03N150C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 5