NDUL09N150CG

NDUL09N150C Power MOSFET 1500V, 3.0Ω, 9A, N-Channel www.onsemi.com Features  Low On-Resistance  Ultra High Voltage  Pb-Free and RoHS Compliance  High Speed Switching  100% Avalanche Tested Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Drain to Source Voltage Value Unit VDSS 1500 Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID 9 A Drain Current (DC) Limited by Package IDL 6 A PW  10s, duty cycle  1% IDP 18 A Power Dissipation PD Drain Current (Pulse) Tc=25C Junction Temperature Tj Storage Temperature Avalanche Energy (Single Pulse) * 78 150 Tstg Source Current (Body Diode) 3.0 55 to +150 IS 1 Lead Temperature for Soldering Purposes, 3 mm from case for 10 seconds 6 V Marking W C C A EAS 197 mJ TL 260 C Thermal Resistance Ratings Parameter Symbol Value Junction to Case Steady State RJC 1.60 Junction to Ambient *2 RJA 41.7 Unit C/W Note : *1 VDD=50V, L=10mH, IAV=6A (Fig.1) *2 Insertion mounted Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 February 2015 - Rev. 1 1 Publication Order Number : NDUL09N150C/D NDUL09N150C Electrical Characteristics at Ta  25C Value Parameter Symbol Conditions Unit min typ Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA Forward Transconductance gFS VDS=20V, ID=3A 5.2 Static Drain to Source On-State Resistance RDS(on) ID=3A, VGS=10V 2.2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time max 1500 V 2 1 mA 100 nA 4 V 3.0  S 2025 pF 222 pF Crss 66 pF td(on) 33 ns Rise Time tr 75 ns Turn-OFF Delay Time td(off) 500 ns Fall Time tf 111 ns Total Gate Charge Qg 114 nC Gate to Source Charge Qgs 12 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD Reverse Recovery Time trr See Fig.3 1050 ns Reverse Recovery Charge Qrr IS=6A, VGS=0V, di/dt=100A/s 9010 nC VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=6A 57 IS=6A, VGS=0V 0.8 nC 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 : Unclamped Inductive Switching Test Circuit Fig.2 : Switching Time Test Circuit Fig.3 : Reverse Recovery Time Test Circuit www.onsemi.com 2 NDUL09N150C www.onsemi.com 3 NDUL09N150C www.onsemi.com 4 NDUL09N150C Package Dimensions NDUL09N150CG unit : mm TO-3PF-3L CASE 340AH ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA (6 PLACES). 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEA SURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.20. SEATING PLANE P E A A1 Q H1 D D2 L2 D3 L1 NOTE 3 L 1 3X 2 1 : Gate 2 : Drain 3 : Source 3 b2 3X b DIM A A1 A2 A3 b b2 b3 c D D2 D3 E e H1 L L1 L2 P Q MILLIMETERS MIN MAX 5.30 5.70 2.80 3.20 3.10 3.50 1.80 2.20 0.65 0.95 1.90 2.15 3.80 4.20 0.80 1.10 24.30 24.70 24.70 25.30 3.30 3.70 15.30 15.70 5.35 5.55 9.80 10.20 19.10 19.50 4.80 5.20 1.90 2.20 3.40 3.80 4.30 4.70 c A3 b3 A2 e ORDERING INFORMATION Device Package Shipping Note NDUL09N150CG TO-3PF-3L SC-94 30pcs. / Tube Pb-Free Note on usage : Since the NDUL09N150C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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