NE521DG

NE521 High−Speed Dual−Differential Comparator/Sense Amp Features • • • • TTL-Compatible Strobes and Outputs Large Common-Mode Input Voltage Range Operates from Standard Supply Voltages Pb−Free Packages are Available http://onsemi.com MARKING DIAGRAMS 14 1 SOIC−14 D SUFFIX CASE 751A 1 NE521G AWLYWW Applications • MOS Memory Sense Amp • A-to-D Conversion • High-Speed Line Receiver MAXIMUM RATINGS Rating Supply Voltage Positive Negative Differential Input Voltage Input Voltage Common Mode Strobe/Gate Maximum Power Dissipation (Note 1) TA = 25°C (Still−Air) N Package D Package Thermal Resistance, Junction−to−Ambient N Package D Package Operating Temperature Range Storage Temperature Range Operating Junction Temperature Lead Soldering Temperature (10 sec max) Symbol V+ V− VIDR VIN Value +7.0 −7.0 "6.0 "5.0 +5.25 Unit V 14 1 PDIP−14 N SUFFIX CASE 646 1 NE521N AWLYYWWG V V A WL Y, YY WW G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PD 1420 1040 RqJA 100 145 0 to 70 −65 to +150 150 +230 mW °C/W PIN CONNECTIONS D, N Packages TA Tstg TJ Tsld °C °C °C °C INPUT 1A INPUT 1B NC OUTPUT 1Y STROBE 1G STROBE S GROUND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 V+ V− INPUT 2A INPUT 2B NC OUTPUT 2Y STROBE 2G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Derate above 25°C at the following rates: N package at 10 mW/°C D package at 6.9 mW/°C. (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 4 1 Publication Order Number: NE521/D NE521 LOGIC FUNCTION TABLE VID (A+, B) VID v −VOS −VOS < VID < VOS VID w VOS X X Strobe S H H H L X Strobe G H H H X L Output (Y) L Undefined H H H INPUT 1A INPUT 1B (1) (2) (12) INPUT 2A (11) INPUT 2B (9) (8) OUTPUT 1Y STROBE 1G STROBE S (4) (5) (6) OUTPUT 3Y STROBE 2G Figure 1. Block Diagram 14 V+ R2 R1 R17 R20 R21 R25 Q4 − D7 Q3 Q25 R16 D6 Q6 Q7 Q5 5 6 Q26 Q30 Q29 R24 4 2 1 Q2 Q1 + Q9 R4 Q10 Q8 Q13 Q11 R14 D2 D1 R22 R23 Q27 Q28 13 V− R8 Q16 Q18 R10 R5 R7 R3 R15 R6 7 R9 Q19 D3 R28 Q36 R29 Q35 Q15 Q14 D4 D5 Q22 Q23 Q24 R18 Q31 8 Q32 R30 Q34 Q32 Q17 12 11 + − 9 Q20 Q21 R12 V+ R11 R19 R26 R27 R34 Figure 2. Equivalent Schematic http://onsemi.com 2 NE521 DC ELECTRICAL CHARACTERISTICS (V+ = +5.0 V; V− = −5.0 V, TA = 0°C to +70°C, unless otherwise noted.) Limits Characteristic Input Offset Voltage At 25°C Overtemperature Range Input Bias Current At 25°C Overtemperature Range Input Offset Current At 25°C Overtemperature Range Common-Mode Voltage Range Input Current High Test Conditions V+ = +4.75 V; V− = −4.75 V Symbol VOS Min − − − − − − −3.0 Typ 6.0 − 7.5 − 1.0 − − Max 7.5 10 20 40 5.0 12 +3.0 Unit mV V+ = +5.25 V; V− = −5.25 V IBIAS mA V+ = +5.25 V; V− = −5.25 V IOS mA V+ = +4.75 V; V− = −4.75 V V+ = +5.25 V; V− = −5.25 V VIH = 2.7 V 1G or 2G Strobe Common Strobe S VIL = 0.5 V 1G or 2G Strobe Common Strobe S VI(S) = 2.0 V V+ = +4.75 V; V− = −4.75 V; ILOAD = −1.0 mA V+ = +5.25 V; V− = −5.25 V; ILOAD = 20 mA − V+ = +5.25 V; V− = −5.25 V; TA = 25°C − VCM IIH V mA − − IIL − − 2.7 − − − − 3.4 50 100 −2.0 −4.0 mA Input Current Low Output Voltage High Low Supply Voltage Positive Negative Supply Current Positive Negative Short−Circuit Output Current VOH VOL V 0.5 V V+ V− ICC+ ICC− ISC 4.75 −4.75 − − −40 5.0 −5.0 27 −15 − 5.25 −5.25 35 −28 −100 mA mA AC ELECTRICAL CHARACTERISTICS (TA = 25°C; RL = 280 W; CL = 15 pF, V+ = 5.0 V; V− = 5.0 V, guaranteed by characterization) Limits Characteristic Large−Signal Switching Speed Propagation Delay Low to High (Note 2) High to Low (Note 2) Low to High (Note 3) High to Low (Note 3) Max. Operating Frequency ns Amp Amp Strobe Strobe − Output Output Output Output − tPLH(D) tPHL(D) tPLH(S) tPHL(S) fMAX − − − − 40 9.6 8.2 4.8 3.9 55 12 9.0 10 6.0 − MHz From Input To Output Symbol Min Typ Max Unit 2. Response time measured from 0 V point of "100 mVP-P 10 MHz square wave to the 1.5 V point of the output. 3. Response time measured from 1.5 V point of input to 1.5 V point of the output. http://onsemi.com 3 NE521 TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 4 3 2 1 0 20mV 100mV VS = +5V TA = 25oC 4 3 2 1 0 50mV 100mV 5mV 10mV TA = 25oC VS = +5V 12 10 8 6 4 2 TPD (LH) 5mV 10mV TESPONSE TIME (ns) INPUT VOLTAGE (mV) INPUT VOLTAGE (mV) TPD (HL) 100 50 0 0 5 10 15 20 25 30 100 50 0 0 5 10 15 20 25 30 60 20 −20 +60 +100 +140 TIME — nS TIME — nS AMBIENT TEMPERATURE (oC) Figure 3. Response Time for Various Input Overdrives 20 VS = +5V 10MHz SQUARE WAVE INPUT TA = 25oC TPD (LH) 18 PROPAGATION DELAY (ns) 16 14 12 10 8 6 4 2 10 20 30 40 50 60 70 100 Figure 4. Response Time for Various Input Overdrives 4.0 VS = +5V 10MHz SQUARE WAVE INPUT TA = 25oC Figure 5. Response Time vs. Temperature 12 PROPAGATION DELAY (ns) VOH OUTPUT VOLTAGE (V) 3.0 10 8 TPD (HL) 6 TPD (LH) TPD (HL) 2.0 1.0 VOL 1000 INPUT VOLTAGE (m Vp−p) −75 −25 +25 +75 o +125 INPUT VOLTAGE (mVp−p) AMBIENT TEMPERATURE ( C) Figure 6. Propagation Delay for Various Input Voltages 12 11 INPT BIAS CURRENT ( μ A) 10 9 8 7 6 Figure 7. Propagation Delay for Various Input Voltages 1.1 1.0 0.9 0.8 0.7 0.6 0.5 Figure 8. Output Voltage vs. Ambient Temperature INPUT OFSET CURRENT ( μ A) −75 −25 +25 +75 AMBIENT TEMPERATURE (oC) +125 −75 −25 +25 +75 +125 AMBIENT TEMPERATURES (oC) Figure 9. Input Bias Current vs. Ambient Temperature Figure 10. Input Offset Current vs. Ambient Temperature http://onsemi.com 4 NE521 ORDERING INFORMATION Device NE521D NE521DG NE521DR2 NE521DR2G NE521N NE521NG 0 to +70°C Temperature Range Package SOIC−14 SOIC−14 (Pb−Free) SOIC−14 SOIC−14 (Pb−Free) PDIP−14 PDIP−14 (Pb−Free) 25 Units/Rail 2500/T ape & Reel 55 Units/Rail Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 5 NE521 PACKAGE DIMENSIONS SOIC−14 CASE 751A−03 ISSUE H − A− 14 8 − B− P 7 PL 0.25 (0.010) M B M 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. G C −T− SEATING PLANE R X 45 _ F D 14 PL 0.25 (0.010) K M M S J TB A S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019 SOLDERING FOOTPRINT* 7X 7.04 1 0.58 14X 14X 1.52 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 NE521 PACKAGE DIMENSIONS PDIP−14 CASE 646−06 ISSUE P 14 8 B 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 −−− 10 _ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 −−− 10 _ 0.38 1.01 A F N −T− SEATING PLANE L C H G D 14 PL K M J M DIM A B C D F G H J K L M N 0.13 (0.005) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NE521/D