NE592D8R2G

NE592 Video Amplifier The NE592 is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of 100 and 400 without external components and adjustable gains from 400 to 0 with one external resistor. The input stage has been designed so that with the addition of a few external reactive elements between the gain select terminals, the circuit can function as a high-pass, low-pass, or band-pass filter. This feature makes the circuit ideal for use as a video or pulse amplifier in communications, magnetic memories, display, video recorder systems, and floppy disk head amplifiers. Now available in an 8-pin version with fixed gain of 400 without external components and adjustable gain from 400 to 0 with one external resistor. Features http://onsemi.com MARKING DIAGRAMS 8 1 SOIC−8 D SUFFIX CASE 751 1 NE592 ALYW G • • • • • • • • • • • • 120 MHz Unity Gain Bandwidth Adjustable Gains from 0 to 400 Adjustable Pass Band No Frequency Compensation Required Wave Shaping with Minimal External Components MIL-STD Processing Available Pb−Free Packages are Available 8 1 PDIP−8 N SUFFIX CASE 626 1 NE592N8 AWL YYWWG Applications Floppy Disk Head Amplifier Video Amplifier Pulse Amplifier in Communications Magnetic Memory Video Recorder Systems +V R1 R2 R8 R10 R9 Q6 Q5 Q4 Q3 R11 OUTPUT 1 14 1 SOIC−14 D SUFFIX CASE 751A 1 NE592D14G AWLYWW 1 14 PDIP−14 N SUFFIX CASE 646 1 NE592N14 AWLYYWWG INPUT 1 Q1 G1A R3 G2A Q2 INPUT 2 G1B R5 G2B R12 OUTPUT 2 A L, WL Y, YY W, WW G or G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package ORDERING INFORMATION Q9 Q10 See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Q11 R14 -V Q7A Q7B Q8 R7A R7B R15 R16 R13 Figure 1. Block Diagram © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 4 1 Publication Order Number: NE592/D NE592 PIN CONNECTIONS D, N Packages INPUT 2 NC G2B GAIN SELECT G1B GAIN SELECT VNC OUTPUT 2 1 2 3 4 5 6 7 14 13 12 11 10 9 8 INPUT 1 NC G2A GAIN SELECT G1A GAIN SELECT V+ NC OUTPUT 1 INPUT 2 G1B GAIN SELECT 1 2 4 D, N Packages 8 7 6 5 INPUT 1 G1A GAIN SELECT V+ OUTPUT 1 V- 3 OUTPUT 2 (Top View) (Top View) MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.) Rating Supply Voltage Differential Input Voltage Common-Mode Input Voltage Output Current Operating Ambient Temperature Range Operating Junction Temperature Storage Temperature Range Maximum Power Dissipation, TA = 25°C (Still Air) (Note 1) D-14 Package D-8 Package N-14 Package N-8 Package D-14 Package D-8 Package N-14 Package N-8 Package Symbol VCC VIN VCM IOUT TA TJ TSTG PD MAX 0.98 0.79 1.44J1.17 RqJA 145 182 100 130 °C/W Value "8.0 "5.0 "6.0 10 0 to +70 150 65 to +150 Unit V V V mA °C °C °C W Thermal Resistance, Junction−to−Ambient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Derate above 25°C at the following rates: D-14 package at 6.9 mW/°C D-8 package at 5.5 mW/°C N-14 package at 10 mW/°C N-8 package at 7.7 mW/°C. http://onsemi.com 2 NE592 DC ELECTRICAL CHARACTERISTICS (VSS = "6.0 V, VCM = 0, typicals at TA = +25°C, min and max at 0°C v TA v 70°C, unless otherwise noted. Recommended operating supply voltages VS = "6.0 V.) Characteristic Differential Voltage Gain Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Input Resistance Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Input Capacitance Input Offset Current Input Bias Current Input Noise Voltage Input Voltage Range Common-Mode Rejection Ratio Gain 2 (Note 4) Test Conditions RL = 2.0 kW, VOUT = 3.0 VP-P Symbol AVOL Min 250 80 − 10 8.0 − − − − − − "1.0 60 50 − PSRR VOS 50 Typ 400 100 4.0 30 − 2.0 0.4 − 9.0 − 12 − 86 − 60 70 Max 600 120 − − − − 5.0 6.0 30 40 − − − − − − dB V Unit V/V − TA = 25°C 0°C v TA v 70°C Gain 2 (Note 4) TA = 25°C 0°C v TA v 70°C TA = 25°C 0°C v TA v 70°C BW 1.0 kHz to 10 MHz − VCM "1.0 V, f < 100 kHz, TA = 25°C VCM "1.0 V, f < 100 kHz, 0°C v TA v 70°C VCM "1.0 V, f < 5.0 MHz DVS = "0.5 V RIN kW CIN IOS IBIAS VNOISE VIN CMRR pF mA mA mVRMS V dB Supply Voltage Rejection Ratio Gain 2 (Note 4) Output Offset Voltage Gain 1 Gain 2 (Note 4) Gain 3 (Note 5) Gain 3 (Note 5) Output Common-Mode Voltage Output Voltage Swing Differential Output Resistance Power Supply Current RL = R RL = R RL = R, TA = 25°C RL = R, 0°C v TA v 70°C RL = R, TA = 25°C RL = 2.0 kW, TA = 25°C RL = 2.0 kW, 0°C v TA v 70°C − RL = R, TA = 25°C RL = R, 0°C v TA v 70°C − − − − 2.4 3.0 2.8 − − − − − 0.35 − 2.9 4.0 − 20 18 − 1.5 1.5 0.75 1.0 3.4 − − − 24 27 VCM VOUT ROUT ICC V V W mA supply voltages VS = "6.0 V.) Characteristic Bandwidth Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Rise Time Gain 1 (Note 2) Gain 2 (Notes 3 and 4) Propagation Delay Gain 1 (Note 2) Gain 2 (Notes 3 and 4) 2. 3. 4. 5. AC ELECTRICAL CHARACTERISTICS (TA = +25°C VSS = "6.0 V, VCM = 0, unless otherwise noted. Recommended operating Test Conditions − Symbol BW Min − − − − − − Typ 40 90 10.5 4.5 7.5 6.0 Max − − 12 − 10 − Unit MHz VOUT = 1.0 VP−P tR ns VOUT = 1.0 VP−P tPD ns Gain select Pins G1A and G1B connected together. Gain select Pins G2A and G2B connected together. Applies to 14-pin version only. All gain select pins open. http://onsemi.com 3 NE592 TYPICAL PERFORMANCE CHARACTERISTICS COMMON-MODE REJECTION RATIO − dB 100 OUTPUT VOLTAGE SWING − Vpp 90 80 70 60 50 40 30 20 10 0 10k 100k 1M 10M 100M GAIN 2 VS = +6V TA = 25oC 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 VS = +6V TA = 25oC RL = 1kW 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -0.2 1 5 10 50 100 500 1000 -0.4 -15 -10 -5 0 5 10 15 20 25 30 35 GAIN 2 GAIN 1 VS = +6V TA = 25oC RL = 1k FREQUENCY − Hz FREQUENCY − MHz TIME − ns Figure 2. Common−Mode Rejection Ratio as a Function of Frequency Figure 3. Output Voltage Swing as a Function of Frequency Figure 4. Pulse Response 28 TA = 25oC SUPPLY CURRENT − mA 24 OUTPUT VOLTAGE − V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -0.2 GAIN 2 TA = 25oC RL = 1kW 1.6 1.4 OUTPUT VOLTAGE − V VS = +8V VS = +6V VS = +3V 1.2 1.0 0.8 0.6 0.4 0.2 0 -0.2 -0.4 0 5 10 15 20 25 30 35 TIME − ns -15 -10 -5 0 5 10 15 20 25 30 35 Tamb = 0oC TA = 25oC TA = 70oC GAIN 2 VS = +6V RL = 1kW 20 16 12 8 3 4 5 6 7 8 SUPPLY VOLTAGE − +V -0.4 -15 -10 -5 TIME − ns Figure 5. Supply Current as a Function of Temperature Figure 6. Pulse Response as a Function of Supply Voltage Figure 7. Pulse Response as a Function of Temperature SINGLE ENDED VOLTAGE GAIN − dB 1.10 1.08 RELATIVE VOLTAGE GAIN 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0.90 0 10 20 30 40 50 60 70 GAIN 1 GAIN 2 VS = +6V 60 50 40 30 20 10 0 -10 1 5 10 TA = −55oC TA = 25oC TA = 125oC 1.4 GAIN 2 VS = +6V RL = 1kW 1.3 RELATIVE VOLTAGE GAIN 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 50 100 500 1000 3 4 5 6 7 8 FREQUENCY − MHz SUPPLY VOLTAGE − +V GAIN 1 GAIN 2 Tamb = 25oC TEMPERATURE − oC Figure 8. Voltage Gain as a Function of Temperature Figure 9. Gain vs. Frequency as a Function of Temperature Figure 10. Voltage Gain as a Function of Supply Voltage http://onsemi.com 4 NE592 TYPICAL PERFORMANCE CHARACTERISTICS 60 50 40 30 20 10 0 -10 VS = +6V VS = +3V 1 5 10 50 100 500 1000 VS = +8V 51W 51W RADJ 1kW 1kW GAIN 2 TA = 25oC RL = 1kW 14 1 12 0.2mF 11 4 8 7 0.2mF DIFFERENTIAL VOLTAGE GAIN − V/V 1000 VS = +6V f = 100kHz TA = 25oC FIGURE 2 SINGLE ENDED VOLTAGE GAIN − dB 100 592 3 10 1 .1 VS = +6V TA = 25oC .01 1 10 100 1K 10K 100K 1M RADJ − W FREQUENCY − MHz Figure 11. Gain vs. Frequency as a Function of Supply Voltage Figure 12. Voltage Gain Adjust Circuit Figure 13. Voltage Gain as a Function of RADJ (Figure 2) OVERDRIVE RECOVERY TIME − ns 21 20 19 18 17 16 15 14 -60 VS = +6V 70 60 50 40 30 20 10 0 -20 20 60 100 140 0 20 40 60 80 100 120 140 160 180 200 DIFFERENTIAL INPUT VOLTAGE − mV TEMPERATURE − oC OUTPUT VOLTAGE SWING − V OR OUTPUT SINK CURRENT − mA VS = +6V TA = 25oC GAIN 2 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 3.0 4.0 5.0 6.0 7.0 SUPPLY VOLTAGE − +V 8.0 VOLTAGE CURRENT TA = 25oC SUPPLY CURRENT − mA Figure 14. Supply Current as a Function of Temperature Figure 15. Differential Overdrive Recovery Time Figure 16. Output Voltage and Current Swing as a Function of Supply Voltage 7.0 OUTPUT VOLTAGE SWING − Vpp 6.0 5.0 4.0 3.0 2.0 1.0 0 10 50 100 500 1K LOAD RESISTANCE − W 5K 10K VS = +6V TA = 25oC 70 INPUT RESISTANCE − KΩ 60 50 40 30 20 10 0 -60 INPUT NOISE VOLTAGE −μ Vrms GAIN 2 VS = +6V 100 90 80 70 60 50 40 30 20 10 0 1 10 100 1K SOURCE RESISTANCE − W 10K GAIN 2 VS = +6V TA = 25oC BW = 10MHz -20 0 20 60 100 TEMPERATURE − oC 140 Figure 17. Output Voltage Swing as a Function of Load Resistance Figure 18. Input Resistance as a Function of Temperature Figure 19. Input Noise Voltage as a Function of Source Resistance http://onsemi.com 5 NE592 TYPICAL PERFORMANCE CHARACTERISTICS 0 GAIN 2 VS = +6V TA = 25oC 0 -50 -100 -150 -200 -250 -300 -350 0 1 2 3 4 5 6 7 8 9 10 1 10 100 FREQUENCY − MHz 1000 GAIN 1 GAIN 2 VS = +6V TA = 25oC PHASE SHIFT − DEGREES -10 -15 -20 -25 FREQUENCY − MHz Figure 20. Phase Shift as a Function of Frequency PHASE SHIFT − DEGREES -5 Figure 21. Phase Shift as a Function of Frequency 60 50 VOLTAGE GAIN − dB 40 30 20 10 0 GAIN 1 GAIN 2 VOLTAGE GAIN − dB VS = +6V Tamb = 25oC RL = 1KW 40 30 20 10 0 -10 -20 -30 -40 -50 .01 VS = +6V TA = 25oC GAIN 3 1 10 100 1000 .1 FREQUENCY − MHz 1 10 100 FREQUENCY − MHz 1000 Figure 22. Voltage Gain as a Function of Frequency Figure 23. Voltage Gain as a Function of Frequency TEST CIRCUITS (TA = 25°C, unless otherwise noted.) VIN 592 RL VOUT 51W 51W 0.2mF ein 592 0.2mF eout eout 51W 51W 1kW 1kW Figure 24. Test Circuits http://onsemi.com 6 NE592 2re 11 +6 14 V1 [ 1.4 @ 10 4 Z(S) ) 2re 1.4 @ 104 Z(S) ) 32 10 V0 5 7 NOTE: V 0(s) v 1(s) 1 592 4 Z -6 Basic Configuration +5 +6 10 1 10 8 7 2 9 4 8 529 [ +6 0.2mF 14 V1 Q 11 10 8 592 2KW V0 14 11 7 1 4 5 7 0.2mF 592 1 4 5 5 C Q 2KW AMPLITUDE: 1-10 mV p-p FREQUENCY: 1-4 MHz -6 3 6 -6 NOTE: For frequency F1