NGB8202N

NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or • • • • Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE) Pb−Free Package is Available Stress Applied to Load G 20 AMPS, 400 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V C RG RGE E Applications • Ignition Systems 1 D2PAK CASE 418B STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Gate Voltage Gate−Emitter Voltage Collector Current−Continuous @ TC = 25°C − Pulsed Continuous Gate Current Transient Gate Current (t≤2 ms, f≤100 Hz) ESD (Charged−Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range Symbol VCES VCER VGE IC IG IG ESD ESD ESD PD TJ, Tstg Value 440 440 "15 20 50 1.0 20 2.0 8.0 500 150 1.0 −55 to +175 Unit V V V ADC AAC mA mA kV kV V W W/°C °C MARKING DIAGRAM 4 Collector GB 8202NG AYWW 1 Gate GB8202N A Y WW G 3 Emitter 2 Collector = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGB8202NT4 NGB8202NT4G Package D2PAK D2PAK (Pb−Free) Shipping † 800/Tape & Reel 800/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NGB8202N/D © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 5 NGB8202N UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175°C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Note 1) Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. RqJC RqJA TL 1.0 62.5 275 °C/W °C/W °C Symbol EAS Value 250 200 180 2000 Unit mJ EAS(R) mJ ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Clamp Voltage BVCES ICES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current VGE = 0 V, VCE = 15 V VCE = 200 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA ICES(R) VCE = −24 V BVGES IGES RG RGE VGE(th) IG = "5.0 mA VGE = "5.0 V TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = 25°C TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C TJ = 175°C TJ = −40°C Reverse Collector−Emitter Leakage Current TJ = 25°C TJ = 175°C TJ = −40°C Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current Gate Resistor (Optional) Gate−Emitter Resistor ON CHARACTERISTICS (Note 3) Gate Threshold Voltage IC = 1.0 mA, VGE = VCE TJ = 25°C TJ = 175°C TJ = −40°C Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 1.5 0.7 1.7 4.0 1.8 1.0 2.0 4.6 2.1 1.3 2.3* 5.2 mV/°C V TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C TJ = −40°C to 175°C 14.25 0.5 1.0 0.4 30 35 30 0.05 1.0 0.005 12 200 370 390 395 415 0.1 1.5 25 0.8 35 39 33 0.1 5.0 0.01 12.5 300 70 16 25 420 440 1.0 10 100* 5.0 39 45* 37 0.5 10* 0.1 14 350* V mA W kW mA V mA mA V Symbol Test Conditions Temperature Min Typ Max Unit http://onsemi.com 2 NGB8202N ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 4) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V TJ = 25°C TJ = 175°C TJ = −40°C TJ = 25°C IC = 9.0 A, VGE = 3.9 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 7.5 A, VGE = 4.5 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 10 A, VGE = 4.5 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 15 A, VGE = 4.5 V TJ = 175°C TJ = −40°C TJ = 25°C IC = 20 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) td(off) tf td(off) tf td(on) tr VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W, VGE = 5.0 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH, VGE = 5.0 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W, VGE = 5.0 V TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C Turn−Off Delay Time (Inductive) TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C Turn−On Delay Time TJ = 25°C TJ = 175°C TJ = 25°C TJ = 175°C *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 6.0 6.0 4.0 8.0 3.0 5.0 1.5 5.0 1.0 1.0 4.0 3.0 8.0 8.0 6.0 10.5 5.0 7.0 3.0 7.0 1.5 1.5 6.0 5.0 10 10 8.0 14 7.0 9.0 4.5 10 2.0 2.0 8.0 7.0 mSec CISS COSS CRSS f = 10 kHz, VCE = 25 V TJ = 25°C 1100 70 18 1300 80 20 1500 90 22 pF gfs IC = 6.0 A, VCE = 5.0 V TJ = 175°C TJ = −40°C TJ = 25°C 0.95 0.7 1.0 0.95 0.8 1.1 0.85 0.7 1.0 1.0 0.8 1.1 1.15 1.0 1.25 1.3 1.2 1.4 10 1.15 0.95 1.3 1.25 1.05 1.4 1.15 0.95 1.3 1.3 1.05 1.4 1.45 1.3 1.55 1.6 1.5 1.75 18 1.35 1.15 1.40 1.45 1.25 1.5 1.4 1.2 1.6* 1.6 1.4 1.7* 1.7 1.55 1.8* 1.9 1.8 2.0* 25 Mhos V Symbol Test Conditions Temperature Min Typ Max Unit Fall Time (Resistive) Fall Time (Inductive) Rise Time http://onsemi.com 3 NGB8202N TYPICAL ELECTRICAL CHARACTERISTICS 400 IA, AVALANCHE CURRENT (A) 350 SCIS ENERGY (mJ) 300 250 200 150 100 50 0 0 2 4 6 VCC = 14 V VGE = 5.0 V RG = 1000 W 8 10 INDUCTOR (mH) TJ = 175°C TJ = 25°C 30 25 20 15 10 5 0 −50 L = 1.8 mH L = 3.0 mH VCC = 14 V VGE = 5.0 V RG = 1000 W L = 10 mH −25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) Figure 1. Self Clamped Inductive Switching VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.0 IC, COLLECTOR CURRENT (A) 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0.0 −50 VGE = 4.5 V −25 0 25 50 75 100 125 150 175 IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 7.5 A 60 50 40 30 20 10 0 Figure 2. Open Secondary Avalanche Current vs. Temperature VGE = 10 V 5V TJ = 175°C 3.5 V 3V 2.5 V 4.5 V 4V 0 1 2 3 4 5 6 7 8 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature 60 IC, COLLECTOR CURRENT (A) 50 40 TJ = 25°C 30 20 10 0 3V 3.5 V IC, COLLECTOR CURRENT (A) VGE = 10 V 5V 4.5 V 4V 60 Figure 4. Collector Current vs. Collector−to−Emitter Voltage VGE = 10 V 50 5V 40 TJ = −40°C 30 20 4.5 V 4V 3.5 V 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 4 NGB8202N TYPICAL ELECTRICAL CHARACTERISTICS VCE = 5 V COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) 45 IC, COLLECTOR CURRENT (A) 40 35 30 25 20 15 10 5 0 0 0.5 1 TJ = 175°C 1.5 2 2.5 TJ = −40°C 3 3.5 4 TJ = 25°C 10000 1000 100 10 VCE = 200 V 1.0 0.1 −50 VCE = −24 V −25 0 25 50 75 100 125 150 175 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.50 GATE THRESHOLD VOLTAGE (V) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 −50 −25 0 25 50 75 100 125 150 175 Mean + 4 s Mean − 4 s Mean C, CAPACITANCE (pF) 1000 100 10 1.0 0.1 Ciss Coss Crss 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature 12 10 SWITCHING TIME (ms) 8 6 4 2 0 25 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 50 75 100 125 150 175 12 10 SWITCHING TIME (ms) 8 6 4 2 0 25 Figure 10. Capacitance vs. Collector−to−Emitter Voltage tfall tdelay VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay tfall 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature http://onsemi.com 5 Figure 12. Inductive Switching Fall Time vs. Temperature NGB8202N R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 t,TIME (S) 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t ≤ 0.1 s 10 100 1000 Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.000001 P(pk) t1 t2 Single Pulse 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 t,TIME (S) 0.01 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TA = P(pk) RqJC(t) Figure 14. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) http://onsemi.com 6 NGB8202N PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J C E − B− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 C 0.160 0.190 4.06 4.83 D 0.020 0.035 0.51 0.89 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC H 0.080 0.110 2.03 2.79 J 0.018 0.025 0.46 0.64 K 0.090 0.110 2.29 2.79 L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 N 0.197 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR V W 1 2 3 S A −T− SEATING PLANE K G D 3 PL 0.13 (0.005) P H M J W TB M U L M SOLDERING FOOTPRINT* 8.38 0.33 F VIEW W−W 10.66 0.42 1.016 0.04 5.08 0.20 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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