NGB8206NG

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. http://onsemi.com 20 AMPS, 350 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits • • • • • C Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability These are Pb−Free Devices RG G RGE E Applications • Ignition Systems MARKING DIAGRAM 4 Collector MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCES 390 V Collector−Gate Voltage VCER 390 V Gate−Emitter Voltage VGE $15 V Collector Current−Continuous @ TC = 25°C − Pulsed IC 20 50 ADC AAC Continuous Gate Current IG 1.0 mA Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG 20 mA ESD (Charged−Device Model) ESD 2.0 kV ESD (Human Body Model) R = 1500 W, C = 100 pF ESD ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V PD 150 1.0 W W/°C TJ, Tstg −55 to +175 °C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Temperature Range kV 8.0 GB 8206xxG AYWW 1 D2PAK CASE 418B STYLE 4 1 Gate 3 Emitter 2 Collector GB8206xx = Device Code xx = N or AN A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2012 February, 2012 − Rev. 9 1 Publication Order Number: NGB8206N/D NGB8206N, NGB8206AN UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C) Characteristic Symbol Single Pulse Collector−to−Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C Value EAS Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C Unit mJ 250 200 180 EAS(R) mJ 2000 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 62.5 °C/W TL 275 °C Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2) 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit BVCES IC = 2.0 mA TJ = −40°C to 175°C 325 350 375 V IC = 10 mA TJ = −40°C to 175°C 340 365 390 VCE = 15 V, VGE = 0 V TJ = 25°C 0.1 1.0 OFF CHARACTERISTICS Collector−Emitter Clamp Voltage Zero Gate Voltage Collector Current ICES VCE = 175 V, VGE = 0 V Reverse Collector−Emitter Clamp Voltage BVCES(R) IC = −75 mA − NGB8206 IC = −75 mA − NGB8206A Reverse Collector−Emitter Leakage Current Gate−Emitter Clamp Voltage Gate−Emitter Leakage Current ICES(R) TJ = 25°C 0.5 1.5 10 TJ = 175°C 1.0 25 100* TJ = −40°C 0.4 0.8 5.0 TJ = 25°C 30 35 39 TJ = 175°C 35 39 45* TJ = −40°C 30 33 37 TJ = 25°C 30 35 39 TJ = 175°C 32 37 42 TJ = −40°C 29 32 37 TJ = 25°C 0.05 0.25 0.5 VCE = −24 V − NGB8206 TJ = 175°C 1.0 12.5 25 TJ = −40°C 0.005 0.03 0.25 TJ = 25°C 0.05 0.25 1.0 VCE = −24 V − NGB8206A TJ = 175°C 1.0 12.5 25 TJ = −40°C 0.005 0.03 0.25 mA V mA BVGES IG = $5.0 mA TJ = −40°C to 175°C 12 12.5 14 V IGES VGE = $5.0 V TJ = −40°C to 175°C 200 300 350* mA Gate Resistor RG TJ = −40°C to 175°C 70 Gate−Emitter Resistor RGE TJ = −40°C to 175°C 14.25 16 25 kW TJ = 25°C 1.5 1.8 2.1 V TJ = 175°C 0.7 1.0 1.3 TJ = −40°C 1.7 2.0 2.3* W ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 2 NGB8206N, NGB8206AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit 3.8 4.6 6.0 mV/°C TJ = 25°C 0.95 1.15 1.35 V TJ = 175°C 0.70 0.95 1.15 TJ = −40°C 1.0 1.30 1.40 ON CHARACTERISTICS (Note 3) Threshold Temperature Coefficient (Negative) Collector−to−Emitter On−Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V Forward Transconductance gfs TJ = 25°C 0.95 1.25 1.45 IC = 9.0 A, VGE = 3.9 V TJ = 175°C 0.8 1.05 1.25 TJ = −40°C 1.1 1.4 1.50 TJ = 25°C 0.85 1.15 1.4 IC = 7.5 A, VGE = 4.5 V TJ = 175°C 0.7 0.95 1.2 TJ = −40°C 1.0 1.3 1.6* IC = 10 A, VGE = 4.5 V NGB8206 TJ = 25°C 1.0 1.3 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.1 1.4 1.7* IC = 10 A, VGE = 4.5 V NGB8206A TJ = 25°C 0.9 1.2 1.6 TJ = 175°C 0.8 1.05 1.4 TJ = −40°C 1.0 1.2 1.7* IC = 15 A, VGE = 4.5 V NGB8206 TJ = 25°C 1.15 1.45 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.25 1.55 1.8* IC = 15 A, VGE = 4.5 V NGB8206A TJ = 25°C 1.0 1.3 1.7 TJ = 175°C 1.0 1.3 1.55 TJ = −40°C 1.1 1.35 1.8* TJ = 25°C 1.3 1.6 1.9 IC = 20 A, VGE = 4.5 V TJ = 175°C 1.2 1.5 1.8 TJ = −40°C 1.4 1.75 2.0* IC = 6.0 A, VCE = 5.0 V TJ = 25°C 10 18 25 Mhos 1100 1300 1500 pF 70 80 90 18 20 22 DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Transfer Capacitance CRSS f = 10 kHz, VCE = 25 V *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 3 TJ = 25°C NGB8206N, NGB8206AN ELECTRICAL CHARACTERISTICS Characteristic Symbol Test Conditions Temperature Min Typ Max Unit TJ = 25°C 6.0 8.0 10 mSec TJ = 175°C 6.0 8.0 10 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 8.0 10.5 14 SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−On Delay Time Rise Time td(off) tf td(off) tf td(on) tr VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W VGE = 5 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH VGE = 5 V VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W VGE = 5 V *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. http://onsemi.com 4 TJ = 25°C 3.0 5.0 7.0 TJ = 175°C 5.0 7.0 9.0 TJ = 25°C 1.5 3.0 4.5 TJ = 175°C 5.0 7.0 10 TJ = 25°C 1.0 1.5 2.0 TJ = 175°C 1.0 1.5 2.0 TJ = 25°C 4.0 6.0 8.0 TJ = 175°C 3.0 5.0 7.0 NGB8206N, NGB8206AN TYPICAL ELECTRICAL CHARACTERISTICS 400 30 TJ = 25°C IA, AVALANCHE CURRENT (A) SCIS ENERGY (mJ) 350 300 250 TJ = 175°C 200 150 100 VCC = 14 V VGE = 5.0 V RG = 1000 W 50 0 2 0 6 4 L = 1.8 mH 20 L = 3.0 mH 15 10 L = 10 mH 5 0 −50 10 8 VCC = 14 V VGE = 5.0 V RG = 1000 W 25 −25 INDUCTOR (mH) 60 2.0 IC = 25 A IC = 20 A 1.5 IC = 15 A 1.25 IC = 10 A 1.0 IC = 7.5 A 0.75 0.5 0.25 VGE = 4.5 V 0.0 −50 −25 0 25 50 75 100 125 150 50 75 100 125 150 175 4V TJ = 175°C 40 3.5 V 30 3V 20 2.5 V 10 0 175 4.5 V 5V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector−to−Emitter Voltage vs. Junction Temperature Figure 4. Collector Current vs. Collector−to−Emitter Voltage 60 60 VGE = 10 V 50 4.5 V 4V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 50 VGE = 10 V TJ, JUNCTION TEMPERATURE (°C) 5V 40 TJ = 25°C 3.5 V 30 20 3V 10 0 25 Figure 2. Open Secondary Avalanche Current vs. Temperature IC, COLLECTOR CURRENT (A) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Self Clamped Inductive Switching 1.75 0 TJ, JUNCTION TEMPERATURE (°C) 2.5 V 0 1 2 3 4 5 6 7 VGE = 10 V 4V 5V 40 TJ = −40°C 3.5 V 30 20 3V 10 0 8 4.5 V 50 2.5 V 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1 2 3 4 5 6 7 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector−to−Emitter Voltage Figure 6. Collector Current vs. Collector−to−Emitter Voltage http://onsemi.com 5 8 NGB8206N, NGB8206AN TYPICAL ELECTRICAL CHARACTERISTICS 100000 VCE = 5 V 40 COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) IC, COLLECTOR CURRENT (A) 45 10000 35 30 25 20 TJ = 25°C 15 10 TJ = 175°C 5 0 0 1 0.5 1.5 TJ = −40°C 2 2.5 3 3.5 10 VCE = 175 V 1.0 0.1 −50 −25 0 25 75 50 100 125 150 175 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage Current vs. Temperature 10000 2.25 Mean Mean + 4 s 2.00 1.75 C, CAPACITANCE (pF) GATE THRESHOLD VOLTAGE (V) 100 4 2.50 Mean − 4 s 1.50 1.25 1.00 0.75 0.50 Ciss 1000 Coss 100 Crss 10 1.0 0.25 0 −50 −25 0 25 50 75 100 125 150 0.1 175 5 10 15 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature Figure 10. Capacitance vs. Collector−to−Emitter Voltage 25 12 10 10 SWITCHING TIME (ms) tfall 8 tdelay 6 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 4 2 0 25 0 TJ, JUNCTION TEMPERATURE (°C) 12 SWITCHING TIME (ms) VCE = −24 V 1000 50 75 100 125 150 8 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay 6 tfall 4 2 0 25 175 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 11. Resistive Switching Fall Time vs. Temperature Figure 12. Inductive Switching Fall Time vs. Temperature http://onsemi.com 6 175 RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/Watt) NGB8206N, NGB8206AN 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 t1 t2 0.01 0.01 0.000001 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 P(pk) TJ(pk) − TA = P(pk) RqJC(t) DUTY CYCLE, D = t1/t2 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t,TIME (S) Figure 13. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) ORDERING INFORMATION Package Shipping† D2PAK 50 Units / Rail NGB8206NT4G D2PAK (Pb−Free) 800 / Tape & Reel NGB8206ANT4G D2PAK (Pb−Free) 800 / Tape & Reel NGB8206ANTF4G D2PAK (Pb−Free) 700 / Tape & Reel NGB8206ANSL3G D2PAK (Pb−Free) 50 Units / Rail Device NGB8206NG (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NGB8206N, NGB8206AN PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K J G D 3 PL 0.13 (0.005) DIM A B C D E F G H J K L M N P R S V W H M T B M SOLDERING FOOTPRINT* P U 10.49 L INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR M 8.38 16.155 F VIEW W−W 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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