NGB8206N
Ignition IGBT
20 A, 350 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
20 AMPS
350 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
C
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
•
•
•
•
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Pb−Free Packages are Available
RG
G
RGE
E
Applications
• Ignition Systems
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCES
390
V
Collector−Gate Voltage
VCER
390
V
Gate−Emitter Voltage
VGE
$15
V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC
20
50
ADC
AAC
Continuous Gate Current
IG
1.0
mA
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
IG
20
mA
ESD (Charged−Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
PD
150
1.0
W
W/°C
TJ, Tstg
−55 to
+175
°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating & Storage Temperature Range
kV
8.0
MARKING
DIAGRAM
NGB
8206NG
AYWW
1 2
3
D2PAK
CASE 418B
STYLE 4
NGB8206N = Device Code
G
= Pb−Free Device
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
Publication Order Number:
NGB8206N/D
NGB8206N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 150°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, L = 1.8 mH, Rg = 1 kW Starting TJ = 175°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
Value
Unit
EAS
mJ
250
200
180
EAS(R)
mJ
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
1.0
°C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
RqJA
62.5
°C/W
TL
275
°C
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2)
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BVCES
IC = 2.0 mA
TJ = −40°C to 175°C
325
350
375
V
IC = 10 mA
TJ = −40°C to 175°C
340
365
390
VCE = 15 V,
VGE = 0 V
TJ = 25°C
0.1
1.0
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
ICES
VCE = 175 V,
VGE = 0 V
Reverse Collector−Emitter Clamp Voltage
BVCES(R)
IC = −75 mA
Reverse Collector−Emitter Leakage Current
ICES(R)
VCE = −24 V
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
TJ = 25°C
0.5
1.5
10
TJ = 175°C
1.0
25
100*
TJ = −40°C
0.4
0.8
5.0
TJ = 25°C
30
35
39
TJ = 175°C
35
39
45*
TJ = −40°C
30
33
37
TJ = 25°C
0.05
0.25
0.5
TJ = 175°C
1.0
12.5
25
TJ = −40°C
0.005
0.03
0.25
mA
V
mA
BVGES
IG = $5.0 mA
TJ = −40°C to 175°C
12
12.5
14
V
IGES
VGE = $5.0 V
TJ = −40°C to 175°C
200
300
350*
mA
W
Gate Resistor (Optional)
RG
TJ = −40°C to 175°C
Gate−Emitter Resistor
RGE
TJ = −40°C to 175°C
14.25
70
16
25
kW
TJ = 25°C
1.5
1.8
2.1
V
TJ = 175°C
0.7
1.0
1.3
TJ = −40°C
1.7
2.0
2.3*
3.8
4.6
6.0
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
Threshold Temperature Coefficient (Negative)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
http://onsemi.com
2
mV/°C
NGB8206N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
TJ = 25°C
0.95
1.15
1.35
V
TJ = 175°C
0.70
0.95
1.15
TJ = −40°C
1.0
1.30
1.40
TJ = 25°C
0.95
1.25
1.45
TJ = 175°C
0.8
1.05
1.25
TJ = −40°C
1.1
1.4
1.50
TJ = 25°C
0.85
1.15
1.4
TJ = 175°C
0.7
0.95
1.2
TJ = −40°C
1.0
1.3
1.6*
TJ = 25°C
1.0
1.3
1.6
TJ = 175°C
0.8
1.05
1.4
TJ = −40°C
1.1
1.4
1.7*
TJ = 25°C
1.15
1.45
1.7
TJ = 175°C
1.0
1.3
1.55
TJ = −40°C
1.25
1.55
1.8*
TJ = 25°C
1.3
1.6
1.9
TJ = 175°C
1.2
1.5
1.8
TJ = −40°C
1.4
1.75
2.0*
TJ = 25°C
10
18
25
Mhos
1100
1300
1500
pF
70
80
90
18
20
22
TJ = 25°C
6.0
8.0
10
TJ = 175°C
6.0
8.0
10
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
8.0
10.5
14
TJ = 25°C
3.0
5.0
7.0
TJ = 175°C
5.0
7.0
9.0
TJ = 25°C
1.5
3.0
4.5
TJ = 175°C
5.0
7.0
10
TJ = 25°C
1.0
1.5
2.0
TJ = 175°C
1.0
1.5
2.0
TJ = 25°C
4.0
6.0
8.0
TJ = 175°C
3.0
5.0
7.0
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.5 A,
VGE = 3.7 V
IC = 9.0 A,
VGE = 3.9 V
IC = 7.5 A,
VGE = 4.5 V
IC = 10 A,
VGE = 4.5 V
IC = 15 A,
VGE = 4.5 V
IC = 20 A,
VGE = 4.5 V
Forward Transconductance
gfs
IC = 6.0 A,
VCE = 5.0 V
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Transfer Capacitance
CRSS
f = 10 kHz, VCE =
25 V
TJ = 25°C
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
td(off)
tf
td(off)
Fall Time (Inductive)
tf
Turn−On Delay Time
td(on)
Rise Time
tr
VCC = 300 V, IC =
9.0 A
RG = 1.0 kW, RL
= 33 W
VGE = 5 V
VCC = 300 V, IC =
9.0 A
RG = 1.0 kW, L =
300 mH
VGE = 5 V
VCC = 14 V, IC =
9.0 A
RG = 1.0 kW, RL
= 1.5 W
VGE = 5 V
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
http://onsemi.com
3
mSec
NGB8206N
TYPICAL ELECTRICAL CHARACTERISTICS
30
SCIS ENERGY (mJ)
350
IA, AVALANCHE CURRENT (A)
400
TJ = 25°C
300
250
TJ = 175°C
200
150
100
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
50
0
0
2
6
4
L = 1.8 mH
20
L = 3.0 mH
15
10
L = 10 mH
5
0
−50
10
8
VCC = 14 V
VGE = 5.0 V
RG = 1000 W
25
−25
INDUCTOR (mH)
50
75
100
125
150 175
Figure 2. Open Secondary Avalanche Current
vs. Temperature
60
2.0
VGE = 10 V
IC = 25 A
1.75
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Self Clamped Inductive Switching
IC = 20 A
1.5
IC = 15 A
1.25
IC = 10 A
1.0
IC = 7.5 A
0.75
0.5
0.25
VGE = 4.5 V
0.0
−50
50
4.5 V
5V
4V
TJ = 175°C
40
3.5 V
30
3V
20
2.5 V
10
0
−25
0
25
50
75
100
150
125
0
175
1
2
3
4
5
6
7
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
60
60
VGE = 10 V
4.5 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
0
4V
50
5V
40
TJ = 25°C
3.5 V
30
20
3V
10
2.5 V
VGE = 10 V
4.5 V
4V
50
5V
40
TJ = −40°C
3.5 V
30
20
3V
10
2.5 V
0
0
0
1
2
3
4
5
6
7
8
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
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4
8
NGB8206N
TYPICAL ELECTRICAL CHARACTERISTICS
100000
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
IC, COLLECTOR CURRENT (A)
45
VCE = 5 V
40
10000
35
30
25
20
TJ = 25°C
15
10
TJ = 175°C
5
TJ = −40°C
0
0
0.5
1
1.5
2
2.5
3
3.5
10
VCE = 175 V
1.0
0.1
−50
−25
0
25
50
75
100
125
150 175
VGE, GATE TO EMITTER VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
2.25
Mean
Mean + 4 s
2.00
C, CAPACITANCE (pF)
1.75
Mean − 4 s
1.50
1.25
1.00
0.75
0.50
Ciss
1000
Coss
100
Crss
10
1.0
0.25
0
−50
0.1
−25
0
25
50
75
100
125
150
175
0
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
12
10
10
tfall
8
tdelay
6
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
RL = 33 W
4
2
0
25
5
TJ, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ms)
GATE THRESHOLD VOLTAGE (V)
100
4
2.50
SWITCHING TIME (ms)
VCE = −24 V
1000
50
75
100
125
150
8
25
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
IC = 9.0 A
L = 300 mH
tdelay
6
tfall
4
2
0
25
175
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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5
RqJC(t), TRANSIENT THERMAL RESISTANCE (°C/
Watt)
NGB8206N
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
t1
t2
0.01
0.01
0.000001
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
P(pk)
TJ(pk) − TA = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
t,TIME (S)
Figure 13. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
ORDERING INFORMATION
Package
Shipping †
NGB8206N
D2PAK
50 Units / Rail
NGB8206NG
D2PAK
50 Units / Rail
Device
(Pb−Free)
NGB8206NSL3
D2PAK
50 Units / Rail
NGB8206NSL3G
D2PAK
50 Units / Rail
(Pb−Free)
D2PAK
800 Units / Tape & Reel
NGB8206NT4G
D2PAK
(Pb−Free)
800 Units / Tape & Reel
NGB8206NTF4
D2PAK
800 Units / Tape & Reel
NGB8206NTF4G
D2PAK
800 Units / Tape & Reel
NGB8206NT4
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NGB8206N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
P
U
SOLDERING FOOTPRINT*
L
M
8.38
0.33
F
1.016
0.04
10.66
0.42
VIEW W−W
5.08
0.20
3.05
0.12
17.02
0.67
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your
local Sales Representative.
NGB8206N/D