NGTB03N60R2DT4G

NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]  IGBT tf=75ns (typ) Diode VF=1.5V (typ) [IF=3A] Diode trr=65ns (typ) 5s Short Circuit Capability Electrical Connection N-Channel 2,4 1 Applications  General Purpose Inverter 3 Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Symbol Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) @Tc=25C *2 Limited by Tjmax @Tc=100C *2 Value Unit Diode Average Output Current V VCES 600 VGES 20 V 9 A 4.5 A ICP 12 A IO 4.5 A PD 49 W 175 C 55 to +175 C IC *1 Collector Current (Peak) Pulse width Llimited by Tjmax 4 DPAK CASE 369C 1 2 3 Marking Diagram 1 Gate AYWW GTB 0360RG 2 Collector Power Dissipation Tc=25C (Our ideal heat dissipation condition) *2 Junction Temperature Tj Storage Temperature Tstg Note :  1:Gate 2:Collector 3:Emitter 4:Collector *1 Collector Current is calculated from the following formula. Tjmax - Tc IC(Tc)= Rth(j-c)×VCE(sat) (IC(Tc)) 4 Collector 3 Emitter GTB0360R A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb-Free Package *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2015 September 2015 - Rev. 3 1 Publication Order Number : NGTB03N60R2DT4G/D NGTB03N60R2DT4G Electrical Characteristics at Ta=25C, Unless otherwise specified Value Parameter Symbol Conditions Unit min Collector to Emitter Breakdown Voltage Collector to Emitter Cut off Current V(BR)CES ICES IC=1mA, VGE=0V VCE=600V, VGE=0V Gate to Emitter Leakage Current IGES VGE=20V, VCE=0V Gate to Emitter Threshold Voltage VGE(th) VCE=20V, IC=80A typ max 600 V Tc=25C 10 A Tc=150C 1 mA 100 nA 4.5 7.0 V Tc=25C 1.7 2.1 V Tc=100C 1.9 2.3 V 1.5 2.1 Collector to Emitter Saturation Voltage VCE(sat) VGE=15V, IC=3A Forward Diode Voltage VF IF=3A Input Capacitance Cies Output Capacitance Coes 17 pF Reverse Transfer Capacitance Cres 10 pF Turn-ON Delay Time td(on) 27 ns Rise Time tr 17 ns Turn-ON Time ton Turn-OFF Delay Time td(off) Fall Time tf VGE=0V/15V Vclamp=400V Turn-OFF Time toff Tc=25C Turn-ON Energy Eon Turn-OFF Energy Eoff Total Gate Charge Qg Gate to Emitter Charge Qge Gate to Collector “Miller” Charge Qgc Diode Reverse Recovery Time trr 415 VCE=20V, f=1MHz VCC=300V, IC=3A RG=30, L=500H See Fig.1, See Fig.2 VCE=300V, VGE=15V, IC=3A IF=3A,di/dt=200A/s, VCC=300V, See Fig.3 V pF 85 ns 59 ns 75 ns 172 ns 50 J 27 J 17 nC 4.4 nC 7.6 nC 65 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Thermal Characteristics at Ta=25C, Unless otherwise specified Parameter Symbol Thermal Resistance IGBT (Junction to Case) Rth(j-c) (IGBT) Thermal Resistance (Junction to Ambient) Rth(j-a) Conditions Tc=25C (Our ideal heat dissipation condition) *2 Note : *2 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. www.onsemi.com 2 Value Unit 3.06 C/W 100 C/W NGTB03N60R2DT4G www.onsemi.com 3 NGTB03N60R2DT4G www.onsemi.com 4 NGTB03N60R2DT4G www.onsemi.com 5 NGTB03N60R2DT4G trr -- IF 200 Reverse Recovery Time, trr -- ns 180 160 140 120 100 80 60 Tc=25°C VCC=300V di/dt=200A/μs 40 20 0 0 2 4 6 8 10 12 Thermal Resistance, Rth(j-c) -- ºC/W Forward Current, IF -- A 14 Rth(j-c) -- Pulse Time 10 7 5 3 2 1.0 7 5 3 Duty Cycle=0.5 0.2 0.1 2 0.05 0.1 7 5 0.02 0.01 3 2 ulse le P Sing 0.01 0.000001 2 3 5 70.00001 2 3 5 70.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1 2 3 5 7 10 Pulse Time, PT -- s Fig.1 Switching Time Test Circuit Fig.2 Timing Chart Diode VGE 90% 10% 0 500H NGTB03N60R2DT4G IC DUT 90% 90% VCC RG 0 VCE 10% 10% tf Fig.3 Reverse Recovery Time Test Circuit DUT NGTB03N60R2DT4G 500H VCC Driver IGBT www.onsemi.com 6 10% 10% tr td(off) toff td(on) ton Eoff Eon NGTB03N60R2DT4G Package Dimensions DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E C A b3 B c2 4 L3 Z D 1 2 3 L4 NOTE 7 c SIDE VIEW b2 e b 1 : Gate 2 : Collector 3 : Emitter 4 : Collector L2 H DETAIL A 0.005 (0.13) TOP VIEW M BOTTOM VIEW C Z H GAUGE PLANE C L SEATING PLANE BOTTOM VIEW A1 L1 DETAIL A Z ALTERNATE CONSTRUCTIONS ROTATED 90 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. ANODE 2. CATHODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 5.80 0.228 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 0.040 0.155 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 1.01 3.93 GENERIC MARKING DIAGRAM* STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. 2.58 0.102 IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. 6.17 0.243 SCALE 3:1 AYWW XXX XXXXXG XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 XXXXXXG ALYWW mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7 NGTB03N60R2DT4G ORDERING INFORMATION Device NGTB03N60R2DT4G Marking AYWW GTB 0360RG Package Shipping (Qty / Packing) DPAK (SINGLE GAUGE) (Pb-Free / Halogen Free) 2500 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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