NGTB15N120FL2WG

DATA SHEET www.onsemi.com IGBT - Field Stop II NGTB15N120FL2WG 15 A, 1200 V VCEsat = 2.0 V Eoff = 0.37 mJ This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. G Features • • • • • • C Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 ms Short Circuit Capability These are Pb−Free Devices E G Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding C E TO−247 CASE 340AM MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C ICM IF A 30 15 60 A A 30 15 Diode Pulsed Current, Tpulse Limited by TJmax IFM 60 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE ±20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TSC 10 ms TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C Operating Junction Temperature Range 15N120FL2 AYWWG 15N120FL2 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package W 294 147 ORDERING INFORMATION Device Package Shipping NGTB15N120FL2WG TO−247 (Pb−Free) 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 October, 2021 − Rev. 4 1 Publication Order Number: NGTB15N120FL2W/D NGTB15N120FL2WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.51 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.81 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 15 A VGE = 15 V, IC = 15 A, TJ = 175°C VCEsat − − 2.00 2.40 2.40 − V VGE = VCE, IC = 400 mA VGE(th) 4.5 5.65 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − − 0.4 4.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 2640 − pF Coes − 88 − Cres − 50 − Qg − 109 − Qge − 23 − Qgc − 51 − td(on) − 64 − tr − 104 − td(off) − 132 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 15 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time TJ = 25°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15 V tf − 173 − Eon − 1.20 − Turn−off switching loss Eoff − 0.37 − Total switching loss Ets − 1.57 − Turn−on delay time td(on) − 62 − Turn−on switching loss Rise time Turn−off delay time Fall time TJ = 150°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15 V tr − 126 − td(off) − 138 − ns mJ ns tf − 300 − Eon − 1.45 − Turn−off switching loss Eoff − 0.76 − Total switching loss Ets − 2.21 − VGE = 0 V, IF = 15 A VGE = 0 V, IF = 50 A, TJ = 175°C VF − − 2.00 2.30 2.60 − V TJ = 25°C IF = 15 A, VR = 200 V diF/dt = 200 A/ms trr − 110 − ns Qrr − 0.69 − mc Irrm − 11 − A Turn−on switching loss mJ DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NGTB15N120FL2WG TYPICAL CHARACTERISTICS 35 11 V 30 25 10 V 20 15 9V 10 8V 7V 5 0 IC, COLLECTOR CURRENT (A) 45 1 2 3 4 5 8 25 10 V 20 15 9V 10 8V 5 7V 0 1 2 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Output Characteristics 30 25 20 10 V 15 10 9V 5 8V 1 2 3 4 5 6 7 8 45 TJ = −55°C 11 V 0 11 V 30 VCE, COLLECTOR−EMITTER VOLTAGE (V) 35 0 VGE = 13 V to 20 V 35 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V to 13 V 40 7 6 TJ = 150°C 40 0 IC, COLLECTOR CURRENT (A) 0 VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 40 45 TJ = 25°C VGE = 13 V to 20 V 40 35 TJ = 25°C 30 TJ = 150°C 25 20 15 10 5 0 8 0 1 2 3 4 5 6 7 9 8 10 11 12 13 14 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 10,000 3.0 Cies IC = 15 A 2.5 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 45 2.0 1.5 1.0 1000 100 Coes Cres 10 0.5 TJ = 25°C 0 −75 −50 −25 0 25 50 1 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 3 NGTB15N120FL2WG TYPICAL CHARACTERISTICS 16 30 TJ = 25°C 25 TJ = 150°C 20 15 10 5 0 0 1.8 0.5 1.0 1.5 2.0 2.5 3.0 4.0 3.5 4.5 5.0 1.4 1.2 14 12 10 8 6 VCE = 600 V VGE = 15 V IC = 15 A 4 2 0 0 20 200 0.6 Eoff 0.4 VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W 160 td(off) 120 tf 80 40 td(on) 0.2 40 60 80 100 140 0 160 tr 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 160 150 Eon SWITCHING TIME (ns) 3.0 120 TJ, JUNCTION TEMPERATURE (°C) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 3.5 SWITCHING LOSS (mJ) 20 120 100 QG, GATE CHARGE (nC) 0.8 4.0 80 Figure 8. Typical Gate Charge Eon 0 60 VF, FORWARD VOLTAGE (V) 1.0 0 40 Figure 7. Diode Forward Characteristics VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W 1.6 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 35 SWITCHING TIME (ns) IF, FORWARD CURRENT (A) 40 2.5 Eoff 2.0 1.5 1.0 120 td(off) VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 90 60 tf td(on) 30 0.5 0 5 10 15 20 25 30 35 40 0 45 tr 5 10 15 20 25 30 35 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 4 40 45 NGTB15N120FL2WG TYPICAL CHARACTERISTICS 700 VCE = 600 V VGE = 15 V TJ = 150°C IC = 15 A 2.0 Eon 1.6 1.2 Eoff 0.8 0.4 5 15 25 35 45 55 65 75 300 200 tf tr 5 25 35 55 45 65 Figure 14. Switching Time vs. Rg Eon 1.2 0.9 Eoff 0.6 400 15 Figure 13. Switching Loss vs. Rg 200 1.5 td(on) Rg, GATE RESISTOR (W) SWITCHING TIME (ns) SWITCHING LOSS (mJ) 400 0 85 td(off) Rg, GATE RESISTOR (W) VGE = 15 V TJ = 150°C IC = 15 A Rg = 10 W 0.3 350 450 500 550 600 650 700 750 VGE = 15 V TJ = 150°C IC = 15 A Rg = 10 W 160 75 85 td(off) 120 tf 80 40 0 350 800 td(on) tr 400 450 500 550 600 650 700 750 800 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 1000 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 500 100 1.8 100 10 dc operation 50 ms 100 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 VCE = 600 V VGE = 15 V TJ = 150°C IC = 15 A 600 SWITCHING TIME (ns) SWITCHING LOSS (mJ) 2.4 1 10 100 1 ms 1000 100 10 VGE = 15 V, TC = 125°C 1 10k 1 10 100 1000 10k VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 5 NGTB15N120FL2WG TYPICAL CHARACTERISTICS SQUARE−WAVE PEAK R(t) (°C/W) 1 50% Duty Cycle RqJC = 0.51 20% 0.1 10% 5% 0.01 R1 Junction 2% C1 0.001 0.0001 R2 Case Cn C2 Ri (°C/W) Ci (J/°C) 0.091186 0.066118 0.083897 0.201027 0.003468 0.015124 0.037692 0.049745 0.072182 0.438100 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn 0.00001 0.001 0.0001 0.01 0.1 1 ON−PULSE WIDTH (s) Figure 19. IGBT Die Self−heating Square−wave Duty Cycle Transient Thermal Response SQUARE−WAVE PEAK R(t) (°C/W) 1 RqJC = 0.81 50% Duty Cycle 20% 0.1 10% Junction R1 R2 Rn C1 C2 Cn 5% 2% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 Case Ri (°C/W) Ci (J/°C) 0.017316 0.022798 0.025844 0.064579 0.117833 0.076569 0.059662 0.154481 0.230902 0.042811 0.000058 0.000439 0.001224 0.001548 0.002684 0.013060 0.053003 0.064733 0.136953 2.335824 0.1 ON−PULSE WIDTH (s) Figure 20. Diode Die Self−heating Square−wave Duty Cycle Transient Thermal Response www.onsemi.com 6 1 NGTB15N120FL2WG Figure 21. Test Circuit for Switching Characteristics www.onsemi.com 7 NGTB15N120FL2WG Figure 22. Definition of Turn On Waveform www.onsemi.com 8 NGTB15N120FL2WG Figure 23. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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