NGTB15N120FLWG

NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. http://onsemi.com Features • • • • • • 15 A, 1200 V VCEsat = 2.0 V Eoff = 0.55 mJ Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation 10 ms Short Circuit Capability Low Gate Charge Soft, Fast Free Wheeling Diode These are Pb−Free Devices C Typical Applications • Solar Inverter • UPS Inverter G ABSOLUTE MAXIMUM RATINGS Rating E Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM IF A 30 15 120 A A 30 15 Diode pulsed current, Tpulse limited by TJmax IFM 120 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short Circuit Withstand Time VGE = 15 V, VCE = 500 V, TJ ≤ 150°C TSC 10 ms TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C Operating junction temperature range G C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM W 156 62.5 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 15N120FL AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB15N120FLWG © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 1 1 Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB15N120FLW/D NGTB15N120FLWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.80 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 15 A VGE = 15 V, IC = 15 A, TJ = 150°C VCEsat 1.5 − 2.0 2.2 2.2 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.35 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 3600 − pF Coes − 110 − Cres − 66 − Qg − 150 − Qge − 28 − Qgc − 68 − td(on) − 72 − tr − 19 − td(off) − 168 − tf − 194 − Eon − 1.17 − Turn−off switching loss Eoff − 0.55 − Total switching loss Ets − 1.72 − Turn−on delay time td(on) − 70 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 15 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15V Rise time tr − 21 − td(off) − 175 − tf − 310 − Eon − 1.35 − Turn−off switching loss Eoff − 0.96 − Total switching loss Ets − 2.31 − Turn−off delay time Fall time Turn−on switching loss TJ = 125°C VCC = 600 V, IC = 15 A Rg = 10 W VGE = 0 V/ 15V http://onsemi.com 2 ns mJ ns mJ NGTB15N120FLWG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IF = 15 A VGE = 0 V, IF = 15 A, TJ = 150°C VF 1.5 1.8 2.5 2.2 V TJ = 25°C IF = 15 A, VR = 400 V diF/dt = 200 A/ms trr − 166 − ns Qrr − 1.1 − mc Irrm − 12 − A trr − 200 − ns Qrr − 1.5 − mc Irrm − 15 − A DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge TJ = 125°C IF = 15 A, VR = 400 V diF/dt = 200 A/ms Reverse recovery current http://onsemi.com 3 NGTB15N120FLWG TYPICAL CHARACTERISTICS 150 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 200 VGE = 20 to 15 V 150 13 V 100 11 V 10 V 50 7V 9V 8V 0 0 1 2 3 4 6 5 7 100 11 V 10 V 50 9V 8V 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 150 100 IC, COLLECTOR CURRENT (A) VGE = 20 to 13 V TJ = −40°C 11 V 10 V 50 9V 7V 0 1 2 3 4 8V 6 5 7 125 TJ = 25°C 100 TJ = 150°C 75 50 25 0 8 0 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 10,000 3.5 3.0 Cies IC = 30 A 2.5 IC = 15 A 2.0 IC = 10 A 1.5 IC = 5 A 1.0 1000 100 Coes 0.5 0 −50 16 VCE, COLLECTOR−EMITTER VOLTAGE (V) CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) 13 V VCE, COLLECTOR−EMITTER VOLTAGE (V) 150 0 TJ = 150°C 0 8 VGE = 20 to 15 V −20 10 40 70 100 130 10 160 Cres 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance http://onsemi.com 4 200 NGTB15N120FLWG TYPICAL CHARACTERISTICS 20 TJ = 25°C 80 TJ = 150°C 60 40 20 0 0 1 2 3 4 6 5 10 5 0 0 40 80 120 160 VF, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W 1.5 tf Eon 1.0 Eoff 0.5 0 VCE = 600 V 15 1000 2.0 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 100 SWITCHING TIME (ns) IF, FORWARD CURRENT (A) 120 0 20 40 60 80 100 120 140 td(on) tr 10 1 160 td(off) 100 VCE = 600 V VGE = 15 V IC = 15 A Rg = 10 W 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 2.5 160 1000 2.0 SWITCHING TIME (ns) SWITCHING LOSS (mJ) tf Eon 1.5 Eoff 1.0 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 0.5 0 8 12 16 20 24 28 td(on) tr 10 1 32 td(off) 100 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 8 12 16 20 24 28 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC http://onsemi.com 5 32 NGTB15N120FLWG TYPICAL CHARACTERISTICS 3.5 1000 VCE = 600 V VGE = 15 V IC = 15 A TJ = 150°C 2.5 td(off) Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 3.0 2.0 1.5 Eoff 1.0 tf td(on) 100 tr 10 VCE = 600 V VGE = 15 V IC = 15 A TJ = 150°C 0.5 0 5 15 25 35 45 55 65 75 1 85 45 55 65 85 75 Figure 14. Switching Time vs. Rg 1000 Eon tf SWITCHING TIME (ns) SWITCHING LOSS (mJ) 35 Figure 13. Switching Loss vs. Rg 1.5 Eoff 1.0 0.5 375 425 475 525 575 625 675 725 td(off) 100 td(on) tr 10 1 775 VGE = 15 V IC = 15 A Rg = 10 W TJ = 150°C 375 425 525 475 575 625 675 725 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 1000 775 1000 100 ms 100 50 ms 1 ms 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 25 Rg, GATE RESISTOR (W) VGE = 15 V IC = 15 A Rg = 10 W TJ = 150°C 2.0 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 15 Rg, GATE RESISTOR (W) 2.5 0 5 1 10 100 1000 100 10 1 0.1 0.01 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Forward Bias Safe Operating Area Figure 18. Reverse Bias Safe Operating Area http://onsemi.com 6 NGTB15N120FLWG TYPICAL CHARACTERISTICS 1 THERMAL RESPONSE (ZqJC) 50% Duty Cycle RqJC = 0.80 20% 0.1 10% 5% 2% 0.01 0.001 R1 Junction R2 Rn Case Ci = ti/Ri 1% C1 C2 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 0.00001 Cn 0.0001 0.001 0.01 0.1 1 10 Ri (°C/W) ti (sec) 0.03570 0.08061 0.140 0.190 0.237 0.114 1.0E−4 1.76E−4 0.002 0.03 0.1 2.0 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance 10 THERMAL RESPONSE (ZqJC) RqJC = 1.5 1 50% Duty Cycle 20% 10% 0.1 5% 2% 0.01 0.001 R1 Junction R2 Case Ci = ti/Ri C1 1% 0.00001 Cn C2 Ri (°C/W) ti (sec) 0.19655 0.414 0.5 0.345 0.0934 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics http://onsemi.com 7 10 100 1000 NGTB15N120FLWG Figure 22. Definition of Turn On Waveform http://onsemi.com 8 NGTB15N120FLWG Figure 23. Definition of Turn Off Waveform http://onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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