NGTB15N120LWG

NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. http://onsemi.com 15 A, 1200 V VCEsat = 1.8 V Eoff = 0.56 mJ Features • • • • • Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge 5 ms Short−Circuit Capability These are Pb−Free Devices C Typical Applications • • • • Inverter Welding Machines Microwave Ovens Industrial Switching Motor Control Inverter G E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25°C @ TC = 100°C IC Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM IF A 30 15 120 A 30 15 IFM 100 A Gate−emitter voltage VGE $20 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Short−Circuit Withstand Time VGE = 15 V, VCE = 600 V, TJ ≤ 150°C Tsc 5 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C TO−247 CASE 340L STYLE 4 E MARKING DIAGRAM 15N120L AYWWG W 229 91 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. June, 2013 − Rev. 3 C A Diode pulsed current, Tpulse limited by TJmax © Semiconductor Components Industries, LLC, 2013 G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NGTB15N120LWG Package Shipping TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB15N120L/D NGTB15N120LWG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.545 °C/W Thermal resistance junction−to−case, for Diode RqJC 1.5 °C/W Thermal resistance junction−to−ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 15 A VGE = 15 V, IC = 15 A, TJ = 150°C VCEsat − − 1.8 2.0 2.2 − V VGE = VCE, IC = 150 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C ICES − − − − 0.5 2.0 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Cies − 3600 − pF Coes − 88 − Cres − 63 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 600 V, IC = 15 A, VGE = 15 V Gate to collector charge Qg 160 Qge 30 Qgc 73 nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss TJ = 25°C VCC = 600 V, IC = 15 A Rg = 15 W VGE = 0 V/ 15V Turn-off switching loss Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching loss TJ = 125°C VCC = 600 V, IC = 15 A Rg = 15 W VGE = 0 V/ 15V Turn-off switching loss td(on) 72 tr 19 td(off) 165 tf 200 Eon 2.1 Eoff 0.56 td(on) 70 tr 21 td(off) 175 tf 260 Eon 2.7 Eoff 1.0 ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 15 A VGE = 0 V, IF = 15 A, TJ = 150°C http://onsemi.com 2 VF 1.4 1.5 1.6 V NGTB15N120LWG TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) 60 VGE = 17 to 11 V 50 10 V 40 30 9V 20 10 8V 0 7V 0 1 2 3 4 5 30 9V 20 10 7V 8V 1 2 3 4 5 6 7 10 7V 0 1 2 3 4 5 6 7 8 50 40 TJ = 150°C TJ = 25°C 30 20 10 0 8 0 5 10 15 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 16 10,000 IF, FORWARD CURRENT (A) Cies C, CAPACITANCE (pF) 8V 60 TJ = −40°C 40 1000 100 Coes Cres 10 20 Figure 2. Output Characteristics 10 V 0 9V 30 Figure 1. Output Characteristics 50 0 40 0 8 10 V VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 17 to 11 V 60 7 6 TJ = 150°C VGE = 17 to 11 V 50 VCE, COLLECTOR−EMITTER VOLTAGE (V) 70 IC, COLLECTOR CURRENT (A) 60 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 70 0 25 50 75 100 125 150 175 14 12 10 8 6 TJ = 25°C 2 0 200 TJ = 150°C 4 0 0.25 0.50 0.75 1.00 1.25 VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics http://onsemi.com 3 1.50 NGTB15N120LWG TYPICAL CHARACTERISTICS Eoff, TURN−OFF SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 16 200 V 14 400 V 12 600 V 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) td(on) tr VCE = 600 V VGE = 15 V IC = 15 A Rg = 15 W 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 6 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 15 W 5 td(off) tr VCE = 600 V VGE = 15 V TJ = 150°C Rg = 15 W 10 12 140 4 14 16 18 20 22 24 26 28 30 32 3 2 Eoff 1 0 8 10 12 14 16 18 20 22 24 26 6 28 30 32 VCE = 600 V VGE = 15 V IC = 15 A TJ = 150°C 5 4 3 2 1 0 5 15 25 35 45 55 65 IC, COLLECTOR (A) Rg, GATE RESISTOR (W) Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. Rg http://onsemi.com 4 160 Eon Figure 10. Energy Loss vs. IC Eoff, TURN−OFF SWITCHING LOSS (mJ) SWITCHING TIME (ns) 0.5 Figure 9. Switching Time vs. Temperature td(on) 8 Eoff 1 IC, COLLECTOR (A) tf 1 1.5 TEMPERATURE (°C) 1000 10 2 Figure 8. Energy Loss vs. Temperature 100 100 Eon Figure 7. Typical Gate Charge td(off) 0 2.5 TEMPERATURE (°C) tf 1 VCE = 600 V VGE = 15 V IC = 15 A Rg = 15 W 3 QG, GATE CHARGE (nC) 1000 10 3.5 75 85 NGTB15N120LWG TYPICAL CHARACTERISTICS SWITCHING TIME (ns) td(off) Eoff, TURN−OFF SWITCHING LOSS (mJ) 1000 tf td(on) 100 tr 10 1 VCE = 600 V VGE = 15 V IC = 15 A TJ = 150°C 5 15 25 35 45 55 65 75 85 3.5 3 2.5 2 1.5 1 0.5 0 375 425 475 525 575 625 675 725 775 Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE 1000 IC, COLLECTOR CURRENT (A) tf td(on) 100 tr VGE = 15 V IC = 15 A Rg = 15 W TJ = 150°C 375 425 475 525 575 625 675 725 100 ms 100 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 775 50 ms 1 ms 1 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area 1000 IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 4 VCE, COLLECTOR−EMITTER VOLTAGE (V) td(off) 1 VGE = 15 V IC = 15 A Rg = 15 W TJ = 150°C Rg, GATE RESISTOR (W) 1000 10 5 4.5 100 10 1 0.1 0.01 VGE = 15 V, TC = 125°C 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Reverse Bias Safe Operating Area http://onsemi.com 5 100 NGTB15N120LWG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 0.6 RqJC = 0.545 0.5 0.4 0.3 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 50% Duty Cycle 0.2 Junction R1 5% 20% 0.1 0.0001 C1 0.001 ti (sec) 0.003407 0.001000 0.001000 0.090901 0.107824 0.002935 0.031623 0.100000 0.003479 0.009274 0.021715 0.145627 0.130809 0.076447 Single Pulse 0 0.00001 Rn Case Ci = ti/Ri 2% 10% R2 Ri (°C/W) 0.01 C2 0.159760 0.197939 Cn 0.1 0.029002 3.448038 10 1 PULSE TIME (sec) Figure 18. IGBT Transient Thermal Impedance 10 THERMAL RESPONSE (ZqJC) RqJC = 1.5 1 50% Duty Cycle 20% 10% 0.1 5% 2% 0.01 0.001 R1 Junction R2 Case Ci = ti/Ri C1 1% C2 0.00001 Cn Ri (°C/W) ti (sec) 0.19655 0.414 0.5 0.345 0.0934 1.48E−4 0.002 0.03 0.1 2.0 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.000001 Rn 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 19. Diode Transient Thermal Impedance Figure 20. Test Circuit for Switching Characteristics http://onsemi.com 6 10 100 1000 NGTB15N120LWG Figure 21. Definition of Turn On Waveform http://onsemi.com 7 NGTB15N120LWG Figure 22. Definition of Turn Off Waveform http://onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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