NGTB15N60EG

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage. www.onsemi.com 15 A, 600 V VCEsat = 1.7 V Features • • • • • • Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications Soft Fast Reverse Recovery Diode 10 ms Short Circuit Capability Excellent Current versus Package Size Performance Density This is a Pb−Free Device C G Typical Applications E • White Goods Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control C ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Symbol Value Unit VCES 600 V IC A 30 15 ICM 120 A IF E MARKING DIAGRAM A IFM 120 A Gate−emitter voltage VGE $20 V Power dissipation @ TC = 25°C @ TC = 100°C PD Short circuit withstand time VGE = 15 V, VCE = 400 V, TJ v +150°C tSC 10 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 15N60G AYWW W 117 47 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. January, 2015 − Rev. 8 C 30 15 Diode pulsed current, Tpulse limited by TJmax © Semiconductor Components Industries, LLC, 2015 G TO−220 CASE 221A STYLE 9 1 Device NGTB15N60EG Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NGTB15N60E/D NGTB15N60EG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction to case, for IGBT Rating RqJC 1.06 °C/W Thermal resistance junction to case, for Diode RqJC 3.76 °C/W Thermal resistance junction to ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 600 − − V VGE = 15 V , IC = 15 A VGE = 15 V , IC = 15 A, TJ = 150°C VCEsat 1.45 1.8 1.7 2.1 1.95 2.4 V VGE = VCE , IC = 250 mA VGE(th) 4.5 5.5 6.5 V VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150°C ICES − − 10 − − 200 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Forward Transconductance VCE = 20 V, IC = 15 A gfs − 10.1 − S Cies − 2600 − Coes − 64 − Cres − 42 − Qg − 80 − Qge − 24 − Qgc − 33 − td(on) − 78 − STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 15 A, VGE = 15 V Gate to collector charge pF nC SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turn−on delay time Rise time tr − 30 − td(off) − 130 − tf − 120 − Eon − 0.900 − Turn−off switching loss Eoff − 0.300 − Total switching loss Ets − 1.200 − Turn−on delay time td(on) − 76 − tr − 33 − td(off) − 133 − tf − 223 − Eon − 1.10 − Turn−off switching loss Eoff − 0.510 − Total switching loss Ets − 1.610 − VF − − 1.6 1.6 1.85 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 15 A VGE = 0 V, IF = 15 A, TJ = 150°C www.onsemi.com 2 V NGTB15N60EG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit trr − 270 − ns Qrr − 350 − nc Irrm − 5 − A trr − 350 − ns Qrr − 1000 − nc Irrm − 7.5 − A DIODE CHARACTERISTIC Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 25°C IF = 15 A, VR = 200 V diF/dt = 200 A/µs TJ = 125°C IF = 15 A, VR = 200 V diF/dt = 200 A/µs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB15N60EG TYPICAL CHARACTERISTICS 60 TJ = 25°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 60 VGE = 17 V to 13 V 50 40 11 V 30 20 10 9V 0 7V 0 1 2 3 4 5 TJ = 150°C VGE = 17 V to 15 V 50 13 V 40 30 11 V 20 9V 10 7V 0 6 7 8 0 3 4 5 6 7 8 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. IGBT Output Characteristics 9 60 50 IC, COLLECTOR CURRENT (A) TJ = −40°C IC, COLLECTOR CURRENT (A) 2 Figure 1. IGBT Output Characteristics 60 VGE = 17 V to 13 V 40 11 V 30 20 10 9V 0 7V 0 1 2 3 4 5 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE = 20 V TJ = −40°C 50 40 25°C 30 150°C 20 10 0 0 8 Figure 3. IGBT Output Characteristics 4 8 12 VGE, GATE−EMITTER VOLTAGE (V) 16 Figure 4. Typical Transfer Characteristics 10000 3.5 VGE = 0 V, f = 1 MHz 3 IC = 30 A CAPACITANCE (pF) VCE, COLLECTOR−EMITTER VOLTAGE (V) 1 2.5 IC = 15 A 2 1.5 IC = 5 A 1 Cies 1000 100 Coes IC = 10 A 0.5 Cres 0 −60 −40 −20 10 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 4 100 NGTB15N60EG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 35 −40°C 30 25 25°C 20 15 150°C 10 5 0 IC = 15 A 15 VCES = 120 V VCES = 480 V 10 5 0 0 0.5 1 1.5 2 2.5 20 0 VF, FORWARD VOLTAGE (V) 1.2 100 1000 1 Eoff tf SWITCHING TIME (ns) SWITCHING LOSS (mJ) 80 Figure 8. Typical Gate Charge Figure 7. Diode Forward Characteristics 0.8 0.6 Eon 0.4 VCE = 400 V VGE = 15 V IC = 15 A Rg = 22 W 0.2 0 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) td(off) 100 tr 10 1 160 td(on) VCE = 400 V VGE = 15 V IC = 15 A Rg = 22 W 0 40 60 80 100 120 140 160 180 200 Figure 10. Switching Time vs. Temperature 1000 3 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W tf SWITCHING TIME (ns) 2 Eon Eoff 1 0 20 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature SWITCHING LOSS (mJ) 40 60 QG, GATE CHARGE (nC) 8 12 16 20 24 28 td(off) 100 tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W 1 32 td(on) 8 12 16 20 24 28 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 5 32 NGTB15N60EG TYPICAL CHARACTERISTICS 1000 VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C 1.6 tf Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) 2 1.2 0.8 Eoff 0.4 5 15 25 35 45 55 65 75 tr 10 VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C 5 85 15 25 35 45 55 65 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg 2 75 85 525 575 1000 VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C 1.6 SWITCHING TIME (ns) SWITCHING ENERGY (mJ) 100 1 0 Eon 1.2 0.8 Eoff tf td(off) 100 tr 225 275 325 375 425 475 525 VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C 1 175 575 td(on) 10 0.4 0 175 225 275 325 375 425 475 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. Collector−Emitter Voltage 1000 1000 1 ms 100 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) td(on) td(off) 100 50 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 10 1 0.1 VGE = 15 V, TC = 125°C 0.01 100 1 1000 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 6 NGTB15N60EG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.06 50% Duty Cycle Ri (°C/W) 20% 10% 5% Junction R1 Rn C2 Cn C1 1% Single Pulse 0.001 0.000001 Case Ci = ti/Ri 2% 0.01 R2 ti (sec) 0.1 0.05010 0.15051 0.33992 0.10550 7.1E−5 1.0E−4 0.002 0.003 0.00999 0.20020 0.03 0.11423 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance THERMAL RESPONSE (ZqJC) 10 50% Duty Cycle 1 RqJC = 3.76 20% 10% 5% 2% Ri (°C/W) 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1% Single Pulse Junction R1 Rn Case Ci = ti/Ri 0.01 C1 0.001 0.000001 R2 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) C2 Cn 1 Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics www.onsemi.com 7 10 ti (sec) 0.01895 0.04097 0.12956 0.1 0.20199 1.0E−7 1.0E−6 1.0E−5 7.1E−5 1.0E−4 1.62730 0.002 0.57301 0.003 0.45453 0.00498 0.40199 0.03 0.21558 0.1 100 1000 NGTB15N60EG Figure 22. Definition of Turn On Waveform www.onsemi.com 8 NGTB15N60EG Figure 23. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative