NGTB15N60S1EG

NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage. www.onsemi.com 15 A, 650 V VCEsat = 1.5 V Features • • • • • • Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency Applications Soft Fast Reverse Recovery Diode 5 ms Short Circuit Capability Excellent Current versus Package Size Performance Density This is a Pb−Free Device C G Typical Applications • White Goods Appliance Motor Control • General Purpose Inverter • AC and DC Motor Control E C ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Symbol Value Unit VCES 650 V IC A 30 15 ICM 120 A IF MARKING DIAGRAM A IFM 120 A Gate−emitter voltage VGE $20 V Power dissipation @ TC = 25°C @ TC = 100°C PD Short circuit withstand time VGE = 15 V, VCE = 400 V, TJ v +150°C tSC 5 ms Operating junction temperature range TJ −55 to +150 °C Storage temperature range Tstg −55 to +150 °C Lead temperature for soldering, 1/8” from case for 5 seconds TSLD 260 °C 15N60S1G AYWW W 117 47 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. May, 2017 − Rev. 7 E 30 15 Diode pulsed current, Tpulse limited by TJmax © Semiconductor Components Industries, LLC, 2015 G C TO−220 CASE 221A STYLE 9 1 Device Package Shipping NGTB15N60S1EG TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: NGTB15N60S1E/D NGTB15N60S1EG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction to case, for IGBT Rating RqJC 0.5 °C/W Thermal resistance junction to case, for Diode RqJC 2.3 °C/W Thermal resistance junction to ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 mA VGE = 0 V, IC = 500 mA, TJ = −40°C V(BR)CES 650 − 720 660 − − V Collector−emitter saturation voltage VGE = 15 V , IC = 15 A VGE = 15 V , IC = 15 A, TJ = 150°C VCEsat 1.3 1.55 1.5 1.75 1.7 1.95 V VGE = VCE , IC = 250 mA VGE(th) 4.5 5.5 6.5 V VGE = 0 V, VCE = 650 V VGE = 0 V, VCE = 650 V, TJ = 150°C ICES − − 10 − − 200 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V, VCE = 0 V IGES − − 100 nA Forward Transconductance VCE = 20 V, IC = 15 A gfs − 10.1 − S Cies − 1950 − Coes − 70 − Cres − 42 − Qg − 88 − Qge − 16 − Qgc − 42 − td(on) − 65 − STATIC CHARACTERISTIC Gate−emitter threshold voltage Collector−emitter cut−off current, gate−emitter short−circuited DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Gate charge total Gate to emitter charge VCE = 480 V, IC = 15 A, VGE = 15 V Gate to collector charge pF nC SWITCHING CHARACTERISTIC , INDUCTIVE LOAD Turn−on delay time Rise time tr − 28 − td(off) − 170 − tf − 140 − Eon − 0.550 − Turn−off switching loss Eoff − 0.350 − Total switching loss Ets − 0.900 − Turn−on delay time td(on) − 65 − tr − 28 − td(off) − 180 − tf − 260 − Eon − 0.650 − Turn−off switching loss Eoff − 0.600 − Total switching loss Ets − 1.250 − VF − − 1.65 1.75 1.85 − Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 150°C VCC = 400 V, IC = 15 A Rg = 22 W VGE = 0 V / 15 V ns mJ ns mJ DIODE CHARACTERISTIC Forward voltage VGE = 0 V, IF = 15 A VGE = 0 V, IF = 15 A, TJ = 150°C www.onsemi.com 2 V NGTB15N60S1EG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit trr − 270 − ns Qrr − 350 − nc Irrm − 5 − A trr − 350 − ns Qrr − 1000 − nc Irrm − 7.5 − A DIODE CHARACTERISTIC Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current TJ = 25°C IF = 15 A, VR = 200 V diF/dt = 200 A/µs TJ = 125°C IF = 15 A, VR = 200 V diF/dt = 200 A/µs Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB15N60S1EG TYPICAL CHARACTERISTICS 60 60 VGE = 17 V to 13 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C VGE = 11 V 50 40 30 20 VGE = 9 V 10 VGE = 7 V 0 0 1 2 3 5 4 6 7 VGE = 11 V 40 30 VGE = 9 V 20 10 VGE = 7 V 8 0 1 2 3 5 4 6 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Output Characteristics Figure 2. Output Characteristics 8 60 VGE = 17 V to 13 V 60 IC, COLLECTOR CURRENT (A) TJ = −40°C VGE = 11 V 50 40 30 20 VGE = 9 V 10 VGE = 7 V 0 0 1 2 3 4 5 TJ = 25°C 50 −40°C 150°C 40 30 20 10 0 7 6 0 8 2 4 6 8 10 12 14 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics 3.0 10,000 IC = 30 A 2.5 2.0 Cies CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) VGE = 17 V to 13 V 0 70 VCE, COLLECTOR−EMITTER VOLTAGE (V) TJ = 150°C 50 IC = 15 A IC = 10 A 1.5 IC = 5 A 1.0 1000 100 Coes 0.5 Cres 0 −50 10 −20 10 40 70 100 130 160 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. VCE(sat) vs. TJ Figure 6. Typical Capacitance www.onsemi.com 4 NGTB15N60S1EG TYPICAL CHARACTERISTICS 20 VGE, GATE−EMITTER VOLTAGE (V) IF, FORWARD CURRENT (A) 35 TJ = 25°C 30 −40°C 25 150°C 20 15 10 5 15 VCES = 480 V 10 5 0 0 0.5 0 1 1.5 VF, FORWARD VOLTAGE (V) 2 0 2.5 10 20 50 60 70 80 90 100 Figure 8. Typical Gate Charge 1000 0.7 tf SWITCHING TIME (ns) Eon 0.6 SWITCHING LOSS (mJ) 40 QG, GATE CHARGE (nC) Figure 7. Diode Forward Characteristics 0.5 Eoff 0.4 0.3 VCE = 400 V VGE = 15 V IC = 15 A Rg = 22 W 0.2 0.1 0 td(off) 100 td(on) tr 10 VCE = 400 V VGE = 15 V IC = 15 A Rg = 22 W 1 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature 1.4 1000 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W 1.0 tf Eon SWITCHING TIME (ns) 1.2 SWITCHING LOSS (mJ) 30 Eoff 0.8 0.6 0.4 td(off) 100 td(on) tr 10 VCE = 400 V VGE = 15 V TJ = 150°C Rg = 22 W 0.2 0 1 8 12 16 20 24 28 32 8 12 16 20 24 28 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Switching Loss vs. IC Figure 12. Switching Time vs. IC www.onsemi.com 5 32 NGTB15N60S1EG TYPICAL CHARACTERISTICS 1.2 1000 0.9 tf SWITCHING TIME (ns) SWITCHING LOSS (mJ) Eon VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C Eoff 0.6 0.3 0 15 25 35 45 55 65 75 85 tr 10 VCE = 400 V VGE = 15 V IC = 15 A TJ = 150°C 15 25 35 45 55 65 Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W) Figure 13. Switching Time vs. Rg Figure 14. Switching Time vs. Rg 75 85 1000 VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C 0.9 tf Eon SWITCHING TIME (ns) SWITCHING LOSS (mJ) td(on) 5 Eoff 0.6 0.3 td_off 100 td_on tr 10 VGE = 15 V IC = 15 A Rg = 22 W TJ = 150°C 1 175 225 275 325 375 425 475 525 575 175 225 275 325 375 425 475 525 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Loss vs. VCE Figure 16. Switching Time vs. VCE 575 1000 1000 1 ms 100 ms IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 1 5 1.2 0 td(off) 100 50 ms 10 dc operation 1 Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 0.1 0.01 1 10 100 10 1 0.1 VGE = 15 V, TC = 125°C 0.01 100 1 1000 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area www.onsemi.com 6 NGTB15N60S1EG TYPICAL CHARACTERISTICS THERMAL RESPONSE (ZqJC) 10 1 0.1 RqJC = 1.06 50% Duty Cycle Ri (°C/W) 20% 10% 5% Junction R1 Rn C2 Cn C1 1% Single Pulse 0.001 0.000001 Case Ci = ti/Ri 2% 0.01 R2 ti (sec) 0.1 0.05010 0.15051 0.33992 0.10550 7.1E−5 1.0E−4 0.002 0.003 0.00999 0.20020 0.03 0.11423 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 19. IGBT Transient Thermal Impedance THERMAL RESPONSE (ZqJC) 10 50% Duty Cycle 1 RqJC = 3.76 20% 10% 5% 2% Ri (°C/W) 0.1 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC 1% Single Pulse Junction R1 Rn Case Ci = ti/Ri 0.01 C1 0.001 0.000001 R2 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) C2 Cn 1 Figure 20. Diode Transient Thermal Impedance Figure 21. Test Circuit for Switching Characteristics www.onsemi.com 7 10 ti (sec) 0.01895 0.04097 0.12956 0.1 0.20199 1.0E−7 1.0E−6 1.0E−5 7.1E−5 1.0E−4 1.62730 0.002 0.57301 0.003 0.45453 0.00498 0.40199 0.03 0.21558 0.1 100 1000 NGTB15N60S1EG Figure 22. Definition of Turn On Waveform www.onsemi.com 8 NGTB15N60S1EG Figure 23. Definition of Turn Off Waveform www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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