NGTB20N120IHTG

Final Product/Process Change Notification Document # :FPCN21198X Issue Date: 9 February 2016 Title of Change: Qualification of ON Semiconductor Niigata fab for 1200V FSII Trench IGBT. Proposed first ship date: 16 May 2016 Contact information: Contact your local ON Semiconductor Sales Office or Samples: Contact your local ON Semiconductor Sales Office Additional Reliability Data: Contact your local ON Semiconductor Sales Office or , Type of notification: This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90 days prior to implementation of the change. ON Semiconductor will consider this change accepted, unless an inquiry is made in writing within 30 days of delivery of this notice. To do so, contact . Change Part Identification: Effective NH17G product may be sourced from either from Niigata (JPF) and/or Czech Republic (CZ4). Change category: ☒ Wafer Fab Change ☐ Assembly Change Change Sub-Category(s): ☒ Manufacturing Site Change/Addition ☐ Manufacturing Process Change Sites Affected: ☐ All site(s) ☐ not applicable ☐ Test Change ☐ Other _______________ ☐ Material Change ☐ Product specific change ☐ Datasheet/Product Doc change ☐ Shipping/Packaging/Marking ☐ Other: ☒ ON Semiconductor site(s) : ☐ External Foundry/Subcon site(s) ON Niigata, Japan Description and Purpose: This FPCN announces the planned capacity expansion of ON Semiconductor’s TIGBT fab operation of 1200V IGBT for TO247 package. Wafer fabrication of the 1200V devices is sourced from ON Semiconductor in Czech Republic (CZ4) and ON Semiconductor Niigata, Japan is added as an additional fabrication site. Upon the expiration of this FPCN, 1200V FSII and 1200V FSII RC TIGBT devices will be produced in either of the two locations, ON Semiconductor at Czech Republic (CZ4) or On Semiconductor Niigata (JPF) These products have been qualified to industrial requirements. TEM001092 Rev. F Page 1 of 3 Final Product/Process Change Notification Document # :FPCN21198X Issue Date: 9 February 2016 Reliability Data Summary: QV DEVICE NAME:NGTB40N120IHRWG PACKAGE: TO247 Test Specification HTRB JESD22-A108 HTGB HTSL Condition Interval Results Ta = 145°C, 80% max rated V 1008 hrs 0/240 JESD22-A108 Ta = 150°C, 100% max rated Vgss 1008 hrs 0/240 JESD22-A103 Ta = 175°C 1008 hrs 0/240 IOL MIL-STD-750 (M1037) AEC-Q101 Ta = +25°C, delta Tj=100°C On/off = 5 min 6000 cyc 0/240 TC JESD22-A104 Ta = -55°C to +150°C 1000 cyc 0/240 H3TRB JESD22-A101 85°C, 85% RH, 18.8psig, bias 1008 hrs 0/240 uHAST JESD22-A102 121°C, 100% RH, 15psig, unbiased 96 hrs 0/240 RSH JESD22- B106 Ta = 265°C, 10 sec 0/90 QV DEVICE NAME: NGTB50N120FL2WG PACKAGE: TO247 Test Specification Condition Interval Results HTRB JESD22-A108 Ta = 145°C, 80% max rated V 1008 hrs 0/240 HTGB JESD22-A108 Ta = 150°C, 100% max rated Vgss 1008 hrs 0/240 HTSL JESD22-A103 Ta = 175°C 1008 hrs 0/240 IOL MIL-STD-750 (M1037) AEC-Q101 Ta = +25°C, delta Tj=100°C On/off = 5 min 6000 cyc 0/240 TC JESD22-A104 Ta = -55°C to +150°C 1000 cyc 0/240 H3TRB JESD22-A101 85°C, 85% RH, 18.8psig, bias 1008 hrs 0/240 uHAST JESD22-A102 121°C, 100% RH, 15psig, unbiased 96 hrs 0/240 RSH JESD22- B106 Ta = 265°C, 10 sec 0/90 Electrical Characteristic Summary: Electrical characteristics are not impacted. TEM001092 Rev. F Page 2 of 3 Final Product/Process Change Notification Document # :FPCN21198X Issue Date: 9 February 2016 List of Affected Standard Parts: TEM001092 Rev. F Part Number Qualification Vehicle NGTB15N120IHRWG W25N120R2CP18 NGTB15N120IHTG W25N120R2CP18 NGTB15N120IHWG W25N120R2CP18 NGTB20N120IHRWG W25N120R2CP18 NGTB20N120IHTG W25N120R2CP18 NGTB20N120IHWG W25N120R2CP18 NGTB30N120IHRWG W25N120R2CP18 NGTB40N120IHRWG W25N120R2CP18 NGTB25N120FL2WG W75N120F2CP22 NGTB25N120SWG W75N120F2CP22 NGTB40N120FL2WG W75N120F2CP22 NGTB40N120SWG W75N120F2CP22 NGTB50N120FL2WG W75N120F2CP22 NGTG25N120FL2WG W75N120F2CP22 NGTG40N120FL2WG W75N120F2CP22 Page 3 of 3