NGTB25N120FL3WG

DATA SHEET www.onsemi.com IGBT - Ultra Field Stop NGTB25N120FL3WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. 25 A, 1200 V VCEsat = 1.7 V Eoff = 0.7 mJ C G Features • • • • • E Extremely Efficient Trench with Field Stop Technology TJmax = 175°C Soft Fast Reverse Recovery Diode Optimized for High Speed Switching These are Pb−Free Devices G Typical Applications • Solar Inverter • Uninterruptible Power Inverter Supplies (UPS) • Welding MARKING DIAGRAM Symbol Value Unit Collector−emitter Voltage VCES 1200 V Collector Current @ TC = 25°C @ TC = 100°C IC Pulsed Collector Current, Tpulse Limited by TJmax Diode Forward Current @ TC = 25°C @ TC = 100°C E TO−247 CASE 340AM ABSOLUTE MAXIMUM RATINGS Rating C ICM IF A 50 25 25N120FL3 AYWWG 100 A A 50 25 Diode Pulsed Current, Tpulse Limited by TJmax IFM 100 A Gate−emitter Voltage Transient Gate−emitter Voltage (Tpulse = 5 ms, D < 0.10) VGE $20 ±30 V Power Dissipation @ TC = 25°C @ TC = 100°C PD Operating Junction Temperature Range TJ −55 to +175 °C Storage Temperature Range Tstg −55 to +175 °C Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C 25N120FL3 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package W 349 174 ORDERING INFORMATION Device Package Shipping NGTB25N120FL3WG TO−247 (Pb−Free) 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 October, 2021 − Rev. 6 1 Publication Order Number: NGTB25N120FL3W/D NGTB25N120FL3WG THERMAL CHARACTERISTICS Symbol Value Unit Thermal resistance junction−to−case, for IGBT Rating RqJC 0.43 °C/W Thermal resistance junction−to−case, for Diode RqJC 0.78 °C/W Thermal resistance junction−to−ambient RqJA 40 °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V VGE = 15 V, IC = 25 A VGE = 15 V, IC = 25 A, TJ = 175°C VCEsat − − 1.70 2.20 1.95 − V STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage VGE = VCE, IC = 400 mA VGE(th) 4.5 5.5 6.5 V Collector−emitter cut−off current, gate− emitter short−circuited VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 175°C ICES − − − 0.4 0.1 2 mA Gate leakage current, collector−emitter short−circuited VGE = 20 V , VCE = 0 V IGES − − 200 nA Cies − 3085 − pF Coes − 94 − Cres − 52 − Gate charge total Qg − 136 − Gate to emitter charge Qge − 29 − Qgc − 67 − td(on) − 15 − tr − 21 − td(off) − 109 − tf − 131 − Eon − 1.0 − Turn−off switching loss Eoff − 0.7 − Total switching loss Ets − 1.7 − Turn−on delay time td(on) − 15 − tr − 21 − td(off) − 113 − DYNAMIC CHARACTERISTIC Input capacitance Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 600 V, IC = 25 A, VGE = 15 V Gate to collector charge nC SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turn−on delay time Rise time Turn−off delay time Fall time Turn−on switching loss TJ = 25°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 15 V Rise time Turn−off delay time Fall time TJ = 150°C VCC = 600 V, IC = 25 A Rg = 10 W VGE = 15 V ns mJ ns tf − 169 − Eon − 1.45 − Turn−off switching loss Eoff − 0.95 − Total switching loss Ets − 2.4 − VGE = 0 V, IF = 25 A VGE = 0 V, IF = 25 A TJ = 175°C VF − − 3.0 2.8 3.4 − V Reverse recovery time trr − 90 − ns Reverse recovery charge TJ = 25°C IF = 25 A, VR = 600 V diF/dt = 500 A/ms Qrr − 0.62 − mc Irrm − 12 − A dIrrm/dt − −256 − A/ms Turn−on switching loss mJ DIODE CHARACTERISTICS Forward voltage Reverse recovery current Diode peak rate of fall of reverse recovery current during tb www.onsemi.com 2 NGTB25N120FL3WG ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Unit trr − 114 − ns DIODE CHARACTERISTICS Reverse recovery time Reverse recovery charge Reverse recovery current Diode peak rate of fall of reverse recovery current during tb TJ = 125°C IF = 25 A, VR = 600 V diF/dt = 500 A/ms Qrr − 1.17 − mc Irrm − 17 − A dIrrm/dt − −296 − A/ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NGTB25N120FL3WG TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (A) 80 11 V 60 40 10 V 20 9V 7V 0 100 1 2 3 4 8V 5 6 9V 20 8V 7V 0 1 100 TJ = −55°C 40 10 V 20 1 2 3 4 5 9V 7 V and 8 V 8 6 7 2 3 4 5 6 7 VGE = 20 V − 13 V TJ = 175°C 11 V 60 10 V 40 9V 20 8V 0 1 2 3 4 5 6 7V 7 VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 3. Output Characteristics Figure 4. Output Characteristics TJ = 25°C TJ = 175°C 80 60 40 20 2 4 6 8 10 12 14 16 8 3.5 IC = 50 A 3.0 2.5 IC = 25 A 2.0 IC = 10 A 1.5 1.0 −75 −50 −25 0 25 50 75 100 125 150 175 200 VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ www.onsemi.com 4 8 80 0 100 IC, COLLECTOR CURRENT (A) 10 V 40 Figure 2. Output Characteristics 11 V 0 11 V Figure 1. Output Characteristics 60 0 TJ = 150°C 60 VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE = 20 V − 13 V 0 80 VCE, COLLECTOR−EMITTER VOLTAGE (V) 80 0 VGE = 20 V − 13 V 0 8 7 IC, COLLECTOR CURRENT (A) 0 IC, COLLECTOR CURRENT (A) 100 VGE = 20 V − 13 V TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 100 NGTB25N120FL3WG TYPICAL CHARACTERISTICS 100 10,000 IF, FORWARD CURRENT (A) CAPACITANCE (pF) Cies TJ = 25°C 1000 100 Coes Cres 0 10 30 20 40 70 60 50 40 30 50 60 70 80 90 100 12 10 8 6 VCE = 600 V VGE = 15 V IC = 25 A 4 2 1.5 2.0 2.5 20 60 40 80 100 120 140 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 1.3 3.0 3.5 4.0 4.5 5.0 Eoff 0.9 0.7 0.5 0.3 160 0 20 40 60 80 100 120 140 160 180 200 QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature SWITCHING LOSS (mJ) tf 100 td(off) tr td(on) VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W 20 Eon 1.1 6 0 1.0 Figure 8. Diode Forward Characteristics 1.5 10 0.5 Figure 7. Typical Capacitance 14 1 0 VF, FORWARD VOLTAGE (V) 1.7 0 TJ = 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 16 0 TJ = 175°C 20 0 1000 SWITCHING TIME (ns) 80 10 SWITCHING LOSS (mJ) VGE, GATE−EMITTER VOLTAGE (V) 10 90 40 60 80 5 4 Eon Eoff 3 2 1 0 100 120 140 160 180 200 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W 10 20 30 40 50 60 70 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A) Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC www.onsemi.com 5 80 90 NGTB25N120FL3WG TYPICAL CHARACTERISTICS 6 100 td(off) tr td(on) 10 10 SWITCHING TIME (ns) 1000 20 30 40 50 60 80 0 0 10 20 30 40 50 60 Figure 14. Switching Loss vs. RG 10 td(off) tf 20 30 40 50 60 VGE = 15 V TJ = 175°C IC = 25 A Rg = 10 W 2.0 Eon 1.5 Eoff 1.0 0.5 0 70 350 400 450 500 550 600 650 700 750 800 RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE 1000 VGE = 15 V TJ = 175°C IC = 25 A Rg = 10 W tf td(off) tr td(on) 450 70 2.5 td(on) 350 400 Eoff 1 Figure 13. Switching Time vs. IC 1000 10 2 90 tr 100 3 RG, GATE RESISTOR (W) VCE = 600 V VGE = 15 V TJ = 175°C IC = 25 A 0 Eon IC, COLLECTOR CURRENT (A) 100 10 SWITCHING TIME (ns) 70 4 SWITCHING LOSS (mJ) 1 VCE = 600 V VGE = 15 V TJ = 175°C Rg = 10 W VCE = 600 V VGE = 15 V TJ = 175°C IC = 25 A 5 SWITCHING LOSS (mJ) tf IC, COLLECTOR CURRENT (A) SWITCHING TIME (ns) 1000 500 550 600 650 700 100 50 ms Single Nonrepetitive Pulse TC = 25°C Curves must be derated linearly with increase in temperature 1 0.1 750 800 dc operation 10 1 10 100 ms 1 ms 100 1K VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area www.onsemi.com 6 10K NGTB25N120FL3WG TYPICAL CHARACTERISTICS 300 10 VGE = 15 V, TC = 175°C 1 10 100 1K 10K 250 TJ = 175°C, IF = 25 A 200 150 100 TJ = 25°C, IF = 25 A 50 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt 2.5 TJ = 175°C, IF = 25 A 2.0 1.5 1.0 TJ = 25°C, IF = 25 A 0.5 0 VR = 400 V VCE, COLLECTOR−EMITTER VOLTAGE (V) Irm, REVERSE RECOVERY CURRENT (A) 1 Qrr, REVERSE RECOVERY CHARGE (mC) trr, REVERSE RECOVERY TIME (ns) 100 VR = 400 V 100 300 500 700 900 1100 VR = 400 V 40 TJ = 175°C, IF = 25 A 30 20 TJ = 25°C, IF = 25 A 10 0 100 300 500 700 900 diF/dt, DIODE CURRENT SLOPE (A/ms) Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt 4.5 4.0 IC = 50 A 3.5 IC = 25 A 3.0 2.5 IC = 10 A 2.0 1.5 1.0 −75 −50 −25 0 25 75 100 125 150 175 200 50 TJ, JUNCTION TEMPERATURE (°C) Figure 23. VF vs. TJ www.onsemi.com 7 1100 50 diF/dt, DIODE CURRENT SLOPE (A/ms) VF, FORWARD VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1000 1100 NGTB25N120FL3WG TYPICAL CHARACTERISTICS 120 Ramp, TC = 110°C 100 Ramp, TC = 80°C Square, TC = 110°C Ipk (A) 80 60 Square, TC = 80°C 40 VCE = 600 V, RG = 10 W, VGE = 15 V 20 0 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 24. Collector Current vs. Switching Frequency R(t), SQUARE−WAVE PEAK (°C/W) 1 RqJC = 0.43 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% Junction R1 R2 Rn C1 C2 Cn 0.001 0.000001 Ri (°C/W) Ci (J/W) 0.0096 0.0105 0.1168 0.0027 0.0275 0.0363 0.1537 0.0206 0.1167 0.0857 0.0095 3.3131 Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.0001 Case 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 25. IGBT Transient Thermal Impedance R(t), SQUARE−WAVE PEAK (°C/W) 1 50% Duty Cycle RqJC = 0.78 20% 0.1 10% Junction R1 R2 Rn C1 C2 Cn Case 5% 2% Duty Factor = t1/t2 Peak TJ = PDM x ZqJC + TC Single Pulse 0.01 0.000001 Ri (°C/W) Ci (J/W) 0.000058 0.000427 0.001260 0.001363 0.003395 0.022881 0.052571 0.078312 0.128193 1.422617 0.017265 0.023397 0.025095 0.073345 0.093146 0.043705 0.060153 0.127694 0.246682 0.070293 0.00001 0.0001 0.001 PULSE TIME (sec) 0.01 Figure 26. Diode Transient Thermal Impedance www.onsemi.com 8 0.1 1 NGTB25N120FL3WG Figure 27. Test Circuit for Switching Characteristics Figure 28. Definition of Turn On Waveform www.onsemi.com 9 NGTB25N120FL3WG Figure 29. Definition of Turn Off Waveform www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340AM ISSUE C DATE 07 SEP 2021 GENERIC MARKING DIAGRAMS* XXXXXXXXX AYWWG XXXXXXXXX XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON77284F TO−247 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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