NGTB30N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
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30 A, 1200 V
VCEsat = 1.75 V
Eoff = 1.0 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
Low Gate Charge
These are Pb−Free Devices
C
Typical Applications
G
• Inductive Heating
• Consumer Appliances
• Soft Switching
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
320
A
Gate−emitter voltage
VGE
$20
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
60
30
320
G
C
TO−247
CASE 340L
STYLE 4
E
A
A
60
30
MARKING DIAGRAM
30N120IHL
AYWWG
W
260
104
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N120IHLWG
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB30N120IHL/D
NGTB30N120IHLWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.48
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.5
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 150°C
VCEsat
−
−
1.75
2.1
2.2
−
V
VGE = VCE, IC = 250 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V
IGES
−
−
200
nA
Cies
−
10,400
−
pF
Coes
−
245
−
Cres
−
185
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
nC
Qg
420
Qge
94
Qgc
178
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
360
tf
150
Eoff
1.0
mJ
TJ = 125°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
td(off)
380
ns
tf
216
Eoff
2.0
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 150°C
VF
1.5
1.7
VCE = 600 V, IC = 30 A, VGE = 15 V
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
Fall time
Turn−off switching loss
Turn−off delay time
Fall time
Turn−off switching loss
ns
mJ
DIODE CHARACTERISTIC
Forward voltage
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2
1.7
V
NGTB30N120IHLWG
TYPICAL CHARACTERISTICS
10 V
100
80
9V
60
40
20
0
8V
7V
0
1
2
4
80
11 V
60
40
8V
20
7V
0
1
2
3
4
5
Figure 1. Output Characteristics
Figure 2. Output Characteristics
160
VGE = 20 to 11 V
10 V
100
80
60
9V
40
7V
20
8V
0
0
1
2
3
4
140
120
100
80
60
40
TJ = 150°C
TJ = 25°C
20
0
5
0
2
4
6
8
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
12
120
IF, FORWARD CURRENT (A)
100,000
CAPACITANCE (pF)
15 V
100
0
5
120
Cies
10,000
1000
Coes
100
Cres
10
120
VCE, COLLECTOR−EMITTER VOLTAGE (V)
TJ = −40°C
140
3
VGE = 15 to 20 V
TJ = 150°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
160
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
140
VGE = 20 to 11 V
TJ = 25°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
0
10
20
30
40
50
60
70
90
90
100
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Diode Forward Characteristics
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3
3.0
NGTB30N120IHLWG
TYPICAL CHARACTERISTICS
Eoff, TURN−OFF SWITCHING LOSS (mJ)
VGE, GATE−EMITTER VOLTAGE (V)
16
VCE = 600 V
12
8
4
0
0
50
100
150
200
250
300
350 400
450
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
20
40
60
80
100
120
140
160
20
40
60
80
100
120
100
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
22
140
26
30
34
38
42 46
50
54
58 62
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
3.5
3
2.5
2
1.5
1
0.5
0
18
22
26
30
34
38
42 46
50
54
58 62
4.5
4
3.5
3
2.5
2
1.5
VCE = 600 V
VGE = 15 V
IC = 30 A
TJ = 150°C
1
0.5
0
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
Rg, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC
Figure 12. Energy Loss vs. Rg
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4
160
4.5
Figure 10. Energy Loss vs. IC
Eoff, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
0
Figure 9. Switching Time vs. Temperature
td(off)
18
0
IC, COLLECTOR CURRENT (A)
tf
1
0.5
TJ, JUNCTION TEMPERATURE (°C)
1000
10
1
Figure 8. Energy Loss vs. Temperature
tf
0
1.5
Figure 7. Typical Gate Charge
Eoff, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
1
2
TJ, JUNCTION TEMPERATURE (°C)
td(off)
10
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
QG, GATE CHARGE (nC)
1000
100
2.5
75
85
NGTB30N120IHLWG
TYPICAL CHARACTERISTICS
3.5
Eoff, TURN−OFF SWITCHING LOSS
(mJ)
10000
SWITCHING TIME (ns)
td(off)
1000
tf
100
VCE = 600 V
VGE = 15 V
IC = 30 A
TJ = 150°C
10
1
5
15
25
35
45
55
65
75
85
1.0
VGE = 15 V
IC = 30 A
Rg = 10 W
TJ = 150°C
0.5
0
375 425
475
525
575
625
725 775
675
Figure 13. Switching Time vs. Rg
Figure 14. Energy Loss vs. VCE
1000
IC, COLLECTOR CURRENT (A)
tf
100
VGE = 15 V
IC = 30 A
Rg = 10 W
TJ = 150°C
375 425
475
525
575
625
675
725
100 ms
1 ms
10
dc operation
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
775
50 ms
100
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE
Figure 16. Safe Operating Area
1000
IC, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
1.5
VCE, COLLECTOR−EMITTER VOLTAGE (V)
td(off)
1
2.0
Rg, GATE RESISTOR (W)
1000
10
3.0
100
10
1
VGE = 15 V, TC = 125°C
1
10
100
1000
10,000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area
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5
NGTB30N120IHLWG
TYPICAL CHARACTERISTICS
THERMAL RESPONSE (ZqJC)
1
RqJC = 0.48
50% Duty Cycle
0.1
20%
Junction R1
10%
5%
0.01
Rn
C2
Cn
Case
Ci = ti/Ri
2%
C1
1%
0.001
0.000001
R2
Ri (°C/W)
0.01616
0.04030
0.060
0.090
0.176
0.093
ti (sec)
1.0E−4
1.76E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance
THERMAL RESPONSE (ZqJC)
10
1
0.1
RqJC = 1.5
50% Duty Cycle
20%
10%
5%
Junction R1
2%
0.01
Rn
Case
C1
Single Pulse
0.00001
C2
Ri (°C/W)
0.19655
0.414
0.5
0.345
0.0934
Ci = ti/Ri
1%
0.001
0.000001
R2
Cn
ti (sec)
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
1
Figure 19. Diode Transient Thermal Impedance
Figure 20. Test Circuit for Switching Characteristics
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6
10
100
100
NGTB30N120IHLWG
Figure 21. Definition of Turn Off Waveform
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
STYLE 1:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 2:
PIN 1.
2.
3.
4.
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
STYLE 5:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 6:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 3:
PIN 1.
2.
3.
4.
98ASB15080C
TO−247
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 4:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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