NGTB30N120L2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for motor driver applications. Incorporated into the device is a soft and
fast co−packaged free wheeling diode with a low forward voltage.
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Features
•
•
•
•
•
•
30 A, 1200 V
VCEsat = 1.70 V
Eoff = 1.4 mJ
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for Low VCEsat
10 ms Short Circuit Capability
These are Pb−Free Devices
C
Typical Applications
• Motor Drive Inverter
• Industrial Switching
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
Collector−emitter voltage
Rating
VCES
1200
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
A
60
30
G
C
Pulsed collector current, Tpulse
limited by TJmax, 10 ms Pulse,
VGE = 15 V
ICM
120
A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
120
A
Gate−emitter voltage
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
±30
V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
A
60
30
W
534
267
10
ms
TJ
−55 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
Operating junction temperature
range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
MARKING DIAGRAM
30N120L2
AYWWG
TSC
Short Circuit Withstand Time
VGE = 15 V, VCE = 500 V, TJ ≤ 150°C
TO−247
CASE 340AL
E
1
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB30N120L2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB30N120L2W/D
NGTB30N120L2WG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.28
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
0.85
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
1200
−
−
V
VGE = 15 V, IC = 30 A
VGE = 15 V, IC = 30 A, TJ = 175°C
VCEsat
−
−
1.70
2.07
1.90
−
V
VGE = VCE, IC = 400 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 175°C
ICES
−
−
−
−
1.0
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
200
nA
Cies
−
7500
−
pF
Coes
−
200
−
Cres
−
140
−
Qg
−
310
−
Qge
−
61
−
Qgc
−
150
−
td(on)
−
116
−
tr
−
35
−
td(off)
−
285
−
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 600 V, IC = 30 A, VGE = 15 V
Gate to collector charge
nC
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
tf
−
175
−
Eon
−
4.4
−
Turn−off switching loss
Eoff
−
1.4
−
Total switching loss
Ets
−
5.8
−
Turn−on delay time
td(on)
−
110
−
Turn−on switching loss
Rise time
Turn−off delay time
Fall time
TJ = 175°C
VCC = 600 V, IC = 30 A
Rg = 10 W
VGE = 0 V/ 15V
tr
−
36
−
td(off)
−
300
−
ns
mJ
ns
tf
−
331
−
Eon
−
5.5
−
Turn−off switching loss
Eoff
−
2.5
−
Total switching loss
Ets
−
8.0
−
VGE = 0 V, IF = 30 A
VGE = 0 V, IF = 30 A, TJ = 175°C
VF
−
−
1.50
1.40
1.70
−
V
TJ = 25°C
IF = 30 A, VR = 400 V
diF/dt = 200 A/ms
trr
−
450
−
ns
Qrr
−
7.85
−
mc
Irrm
−
32
−
A
Turn−on switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
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2
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
120
120
VGE = 20 V
to 13 V
100
TJ = 150°C
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25°C
11 V
80
10 V
60
40
9V
20
7V
8V
0
1
2
3
4
5
7
6
11 V
80
60
10 V
40
9V
20
8V
7V
0
8
1
2
3
4
5
7
6
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
8
120
VGE = 20 V
to 13 V
100
IC, COLLECTOR CURRENT (A)
TJ = −55°C
11 V
80
60
10 V
40
20
7V
9V
8V
0
0
1
2
3
4
5
6
7
100
80
60
40
TJ = 150°C
20
TJ = 25°C
0
0
8
1
2
3
4
5
6
7
8
9 10 11 12 13
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
3.50
100000
TJ = 25°C
3.00
IC = 60 A
2.50
IC = 30 A
2.00
IC = 15 A
1.50
1.00
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (A)
100
0
0
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 20 V
to 13 V
Cies
10000
1000
Coes
100
Cres
10
0.50
0.00
−75 −50 −25
1
0
25
50
75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
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3
90 100
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
16
60
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
70
TJ = 25°C
50
TJ = 150°C
40
30
20
10
0
14
12
VCE = 600 V
10
8
6
4
VCE = 600 V
VGE = 15 V
IC = 30 A
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
4.0
50
100
VF, FORWARD VOLTAGE (V)
QG, GATE CHARGE (nC)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
7
250
200
150
1000
6
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
Eon
5
4
3
Eoff
2
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
1
0
0
20
40
60
80
100
120
140
tf
100
td(on)
tr
VCE = 600 V
VGE = 15 V
IC = 30 A
Rg = 10 W
10
0
160
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
160
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
18
16
14
SWITCHING TIME (ns)
20
SWITCHING LOSS (mJ)
td(off)
Eon
12
10
8
Eoff
6
4
td(off)
tf
td(on)
100
tr
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2
0
5
15
25
35
45
55
65
75
10
85
5
15
25
35
45
55
65
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
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4
75
85
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
10000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
SWITCHING LOSS (mJ)
12
10
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 30 A
Eon
SWITCHING TIME (ns)
14
8
6
Eoff
4
1000
td(off)
td(on)
tf
100
tr
2
0
5
15
25
35
55
45
65
75
10
5
85
15
25
35
45
55
65
75
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
85
1000
9
7
SWITCHING TIME (ns)
SWITCHING LOSS (mJ)
8
Eon
6
5
4
Eoff
3
VGE = 15 V
TJ = 150°C
IC = 30 A
Rg = 10 W
2
1
0
350
400
450
500
550
600 650
700
750
800
tf
td(on)
100
tr
VGE = 15 V
TJ = 150°C
IC = 30 A
10 Rg = 10 W
350 400 450
500
550
600 650
700
750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
1000
100
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
td(off)
50 ms
10
dc operation
100 ms
1 ms
1
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
1
10
100
10
VGE = 15 V, TC = 125°C
1
100
1000
1
10000
10
100
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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5
NGTB30N120L2WG
TYPICAL CHARACTERISTICS
140
VCE = 600 V, RG = 10 W, VGE = 0/15 V
TC = 80°C
120
Ipk (A)
100
80
60
40
TC = 110°C
20
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 19. Collector Current vs. Switching
Frequency
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJA = 0.277
50% Duty Cycle
0.1
20%
10%
5%
0.01
R1
Junction
R2
Rn
Case
2%
C1
0.001
1E−05
Ci (J/°C)
0.006487
0.023120
0.061163
0.092651
1.252250
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.0001
1E−06
Cn
C2
Ri (°C/W)
0.048747
0.043252
0.051703
0.107932
0.025253
0.0001
0.01
0.001
0.1
1
ON−PULSE WIDTH (s)
Figure 20. IGBT Transient Thermal Impedance
SQUARE−WAVE PEAK R(t) (°C/W)
1
RqJC = 0.848
50% Duty Cycle
20%
0.1
10%
Junction R1
R2
Rn
C1
C2
Cn
5%
2%
Single Pulse
0.01
1E−06
1E−05
0.001
0.062512
0.01
ON−PULSE WIDTH (s)
Figure 21. Diode Transient Thermal Impedance
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6
Ci (J/°C)
0.000058
0.014848
0.000446
0.001201
0.001565
0.002662
0.013330
0.051358
0.068631
0.124296
1.608971
0.145707
0.254415
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
Case
Ri (°C/W)
0.017247
0.000213
0.022447
0.026328
0.063916
0.118778
0.075016
0.061573
0.1
1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
SCALE 1:1
E
E2/2
D
SEATING
PLANE
Q
2X
2
M
B A
M
NOTE 6
S
NOTE 3
1
0.635
P
A
E2
NOTE 4
4
DIM
A
A1
b
b2
b4
c
D
E
E2
e
F
L
L1
P
Q
S
3
L1
F
NOTE 5
L
2X
B
A
NOTE 4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
b2
c
b4
3X
e
b
0.25
A1
NOTE 7
M
B A
M
MILLIMETERS
MIN
MAX
4.70
5.30
2.20
2.60
1.07
1.33
1.65
2.35
2.60
3.40
0.45
0.68
20.80
21.34
15.50
16.25
4.32
5.49
5.45 BSC
2.655
--19.80
20.80
3.81
4.32
3.55
3.65
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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